Abstract: An LED device is provided which includes a substrate, an LED element disposed on the substrate, an inorganic glass molded body disposed at a position where all or a part of the light which is emitted from the LED element passes through, a first bonding portion that is provided in contact with the substrate and bonds the substrate and the inorganic glass molded body, and a second bonding portion provided between the LED element and the inorganic glass molded body. The LED element is shielded from the outside air by the substrate, the inorganic glass molded body and the first bonding portion. A material which forms the second bonding portion contains a condensation polymerization-type silicone resin. A distance between the LED element and the inorganic glass molded body is 0.1 mm or less.

Abstract: A LED device includes LED chips mounted on a substrate, a first fluorescent layer, a second fluorescent layer and a package housing. The LED chips emit a blue light. The first fluorescent layer has a first side facing to the LED chips for converting the blue light to a red light. The second fluorescent layer has a first side attached to a second side of the first fluorescent layer for converting the blue light to a red light emitted from a second side of the second fluorescent layer. The package housing holds the substrate and the first fluorescent layer.

Abstract: An organic light emitting display device includes a first electrode and a second electrode on a substrate, the first electrode being opposite to the second electrode; and at least one emission part between the first electrode and the second electrode, the at least one emission part including at least one organic layer, wherein the at least one organic layer comprises a peak wavelength of electroluminescence (EL) spectrum (PWES) structure where a moving range of a peak wavelength of an EL spectrum emitted from the at least one emission part is set.

Abstract: The present invention relates to an OLED standing lamp in which a lighting unit includes a band-shaped transparent film and a band-shaped casing plate, which are disposed on a front surface and a back surface of a band-shaped OLED lighting sheet, respectively, a support body has one end portion at an upper side thereof which is fastened to one end portion of the lighting unit and supports the lighting unit so that the lighting unit is spaced apart from the ground, and a base is extended on the ground and supports the support body fastened to the lighting unit, thereby minimizing a thickness and providing light having improved brightness, by adopting an OLED as a light source.

Abstract: A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).

Abstract: A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).

Abstract: One or more light emitting diode diodes (LEDs) are attached to a printed circuit board. The attached LEDs are connectable with a power source via circuitry of the printed circuit board. An overmolding material is insert molded an over at least portions of the printed circuit board proximate to the LEDs to form a free standing high thermal conductivity material overmolding that covers at least portions of the printed circuit board proximate to the LEDs. The free standing high thermal conductivity material has a melting temperature greater than about 100° C. and has a thermal conductivity greater than or about 1 W/m·K. In some embodiments, the free standing high thermal conductivity material is a thermoplastic material.

Abstract: A light emitting device including a substrate and a conductive member array including a plurality of conductive members arranged on an upper surface of the substrate in a first direction. Each of the plurality of conductive members including a wire-connected portion, one or more coupling portions connected to the wire-connected portion, an element mounting portion connected to said one or more coupling portions, and one or more extending portions connected to the element mounting portion. Light emitting elements are respectively arranged on the element mounting portion of each of the plurality of conductive members, and bonding members respectively bond the element mounting portion to respective one of the light emitting elements.

Abstract: Embodiments provide a light emitting device package including a first lead frame and a second lead frame, a light emitting device electrically connected to each of the first lead frame and the second lead frame, the light emitting device having a first electrode pad asymmetrically formed on a top surface thereof, and a reflective member disposed around the light emitting device to reflect light emitted from the light emitting device. The reflective member is configured such that a standard deviation of tilts of a reflective surface of a first area, in which the first electrode pad is disposed, is greater than a standard deviation of tilts of a reflective surface of a second area opposite to the first area.

Abstract: Disclosed are a light-emitting device package, a manufacturing method therefor, and a vehicle lamp and a backlight unit including the same. The light-emitting device package includes: a light-emitting chip having electrode pads positioned at a lower part thereof; a wavelength conversion unit for covering at least an upper surface and lateral surfaces of the light-emitting chip; and a reflective part which covers the lateral surfaces of the light-emitting chip. Accordingly, the light-emitting device package can be miniaturized and a separate substrate for forming a lens is not required.

Abstract: A component includes a semiconductor body, a carrier, and a stabilization layer arranged between the semiconductor body and the carrier in the vertical direction. The semiconductor body has a first semiconductor layer facing away from the carrier, a second semiconductor layer facing the carrier, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The carrier has a first via and a second via laterally spaced apart from the first via by means of an intermediate region. The first via is connected to the first semiconductor layer in an electrically conductive manner and the second via is connected to the second semiconductor layer in an electrically conductive manner. The stabilization layer is continuous, overlaps with the vias in a top view, and laterally bridges the intermediate region. The stabilization layer is electrically insulated from the vias and from the semiconductor body.

Abstract: A method is provided for fabricating an emissive display substrate with a light management system. The method provides a transparent first substrate with a top surface and forms a plurality of emissive element wells. The well sidewalls are formed from a light absorbing material or a light reflector material. In one aspect, a light blocking material film layer is formed overlying the first substrate top surface, and the emissive element sidewalls are formed in the light blocking material film layer. In another aspect, a transparent second substrate is formed overlying the first substrate top surface. Then, the emissive element wells are formed in the second substrate with via surfaces, and the light blocking material is deposited overlying the well via surfaces. Additionally, the light blocking material may be formed on the bottom surface of each well. An emissive display substrate with light management system is provided below.

Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.

Abstract: In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.

Abstract: A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

Abstract: To provide a process for producing a fluorinated crosslinked product which is excellent in stability and produces less HF. A process for producing a fluorinated crosslinked product, which comprises irradiating a fluorinated polymer having a unit represented by the following formula (1), with active energy rays having a wavelength of from 150 to 300 nm: wherein X1 and X2 are each independently a hydrogen atom or a fluorine atom, Rf1 is a fluoroalkylene group or a fluoroalkylene group having at least two carbon atoms and an etheric oxygen atom between carbon-carbon atoms, Q1 is a single bond or an etheric oxygen atom, and Z1 is OH, OR1 or NR2R3, wherein R1 is an alkyl group, and R2 and R3 are each independently a hydrogen atom or an alkyl group.

Abstract: An LED module includes a base portion, a first reflector portion secured to a first side of the base portion, a second reflector portion secured to a first side of the base portion; and an LED package disposed along the first side of the base portion. The LED package can be secured on a first end between the base portion and the first reflector portion, and on a second end between the base portion and a second reflector portion. Coolant channels can be defined through the base and reflector portions. A connector can electrically connect negative and positive terminals of adjacently located and oppositely oriented LED elements in the LED package. The reflector portions can be exchanged for other reflector portions that have a different reflector profile.

Abstract: An RF amplifier device includes a semiconductor die and an integrated passive device (IPD) on a ground flange. The IPD includes a semiconductor substrate and a metal-insulator-metal (MIM) capacitor coupled to the semiconductor substrate. The MIM capacitor includes a first electrode, a second electrode, and a dielectric between the first electrode and the second electrode. A first RF capacitor is over the semiconductor substrate and a second RF capacitor is over the semiconductor substrate. A metal layer is patterned to form a portion of an elevated metal shielding structure, a first plate of the first RF capacitor and a first plate of the second RF capacitor. The elevated metal shielding structure is over the MIM capacitor. The IPD is electrically coupled to the semiconductor die.

Abstract: A light emitting device package assembly including a first substrate, a plurality of light emitting device packages disposed on the first substrate, and a light conversion member disposed on the light emitting device packages. Each of the light emitting device packages includes a main body disposed on the first substrate and including a first cavity, a light source disposed in the first cavity, and a first matrix disposed in the first cavity. Further, the light conversion member includes a second substrate including a plurality of second cavities, a second matrix disposed in the second cavities, and first light conversion particles disposed in the second matrix.

Abstract: An optical biosensor module includes a circuit board having a mounting surface and first and second circuits. A light-receiving unit is disposed on the mounting surface, and includes a light receiver electrically connected to the first circuit and having a light-receiving surface. A light-emitting unit is disposed on the light-receiving surface, and includes a light emitter electrically connected to the second circuit and having a light-emitting surface, and a light emitter blocking wall surrounding the light emitter. An opaque interface exists between the light receiver and the light emitter, and a top side of the light emitter blocking wall is equal to or higher than the light-emitting surface.

Abstract: Light emitting devices and components having excellent chemical resistance and related methods are disclosed. In one embodiment, a component of a light emitting device can include a silver (Ag) portion, which can be silver on a substrate, and a protective layer disposed over the Ag portion. The protective layer can at least partially include an inorganic material for increasing the chemical resistance of the Ag portion.

Abstract: A packaging method for organic semiconductor device is disclosed, and comprising steps of manufacturing an organic semiconductor device on a flexible base; forming a photoresist block having a predetermined interval with respect to the organic semiconductor device and located at two sides of the organic semiconductor device on the flexible base; depositing an inorganic layer on the photoresist block, the organic semiconductor device and the flexible base; removing the photoresist block and inorganic layer on the photoresist block; and depositing an organic layer on the inorganic layer disposed on the organic semiconductor device. The present invention can form an inorganic/organic flexible OLED packaging structure. The packaging structure cannot only omit a deposition mask used in depositing an inorganic layer in the conventional thin-film packaging art, but also effectively increase a blocking property of moisture and oxygen of OLED device in order to increase the life of the OLED device.

Abstract: A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

Abstract: A microLED display panel includes a substrate being divided into a plurality of sub-regions for supporting microLEDs, and a plurality of drivers being correspondingly disposed on surfaces of the sub-regions respectively. In one embodiment, a top surface of the substrate has a recess for accommodating the driver.

Abstract: A display device includes a display area and a non-display area. The non-display area includes a sealing area which includes a sealing material. The display area includes a thin film transistor structure, a pixel electrode on and connected to the thin film transistor structure, and a pixel defining layer overlapping an edge of the pixel electrode. A first functional layer is on substrate on which the pixel defining layer is formed and does not overlap the sealing area. A light emitting layer is on the first functional layer and overlaps the pixel electrode, and a common electrode on the light emitting layer.

Abstract: A lighting device comprising at least one solid state light emitting light source, a power supply and a housing. The light source(s), and optionally also the power supply, is/are positioned within the housing. The power supply is configured to supply power to the light source(s). The housing comprises at least one substantially transparent light passing structure which comprises at least one thermoplastic material. When power is supplied to the light source, at least a portion of the light emitted by the source light passes through the light passing structure.

Abstract: A method of manufacturing a light emitting device includes providing a substrate and forming a plurality of photosensitive bumps over the substrate. The method also includes forming a photosensitive layer over the plurality of photosensitive bumps and patterning the photosensitive layer to form a recess through the photosensitive layer to expose a surface. The method also includes disposing an organic emissive layer on the surface, and removing the patterned photosensitive layer.

Abstract: An optic configured to create an asymmetric pattern of illumination includes a cavity defined by a sidewall. The cavity is oriented to receive light emitted by a light source that is disposed adjacent a light source receiving end of the cavity. Further, the optic includes a totally internally reflective surface that extends circumferentially about the sidewall and is tapered, so as to reflect emitted light that passes through the sidewall of the cavity and into a body of the optic. The totally internally reflective surface can have a form that is different on opposing sides of the cavity. Furthermore, the optic includes a convex surface that is disposed at a light emitting end of the sidewall to condense, focus, or collimate emitted light from the light source.

Abstract: An LED lamp A includes a plurality of LED modules 2 each including an LED chip 21, and a support member 1 including a support surface 1a on which the LED modules 2 are mounted. The LED modules 2 include a plurality of kinds of LED modules, or a first through a third LED modules 2A, 2B and 2C different from each other in directivity characteristics that represent light intensity distribution with respect to light emission directions. This arrangement ensures that the entire surrounding area can be illuminated with sufficient brightness.

Abstract: A method of manufacturing a light emitting device includes: forming a light-transmissive member that is substantially rectangular in a plan view to cover an upper surface of a light emitting element mounted on a base member; and forming a frame body so as to surround the light-transmissive member, wherein, in the step of forming the frame body, the frame body is formed such that a distance from an upper surface of the base member to an upper end of the frame body is smaller along a short side of the light-transmissive member than along a long side of the light-transmissive member.

Abstract: An LED package with trenches traversing a die pad to provide a mechanical interlock mechanism to strengthen bonding between the die pad and an insulator such that de-lamination is less likely to occur between the die pad and the insulator. A chip carrying region is defined by a barrier portion formed by the insulator in the trenches and in gaps between electrodes and the die pad, such that a light converting layer is confined within the barrier portion.

Abstract: A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. The via hole sequentially penetrates through the first type semiconductor layer, the active layer and a portion of the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the via hole define a epitaxial structure. The buffer pads are disposed between the carrier and the second type semiconductor layer, wherein the buffer pads is with Young's modulus of 2˜10 GPa, the second bonding pad is disposed within the via hole to contact the second type semiconductor layer, and the epitaxial structure is electrically bonded to the receiving substrate through the bonding pads.

Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

Abstract: The invention provides a lighting unit comprising a source of blue light, a source of green light, a first source of red light comprising a first red luminescent material, configured to provide red light with a broad band spectral light distribution, and a second source of red light comprising a second red luminescent material, configured to provide red light with a spectral light distribution comprising one or more red emission lines. Especially, the first red luminescent material comprises (Mg,Ca,Sr)AlSiN3:Eu and/or (Ba,Sr,Ca)2Si5-xAlxOxN8-x:Eu, and the second red luminescent material comprises K2SiF6:Mn.

Abstract: Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.

Abstract: A package body for a semiconductor device includes a lead frame, an insulating package, and a reflective coating layer. The lead frame has a first electrode and a second electrode separated from each other. The insulating package provides a housing structure and forming a package cavity therein. The package cavity has a reflective side surface formed by the insulating package. The reflective coating layer partially covers the first electrode and the second electrode and forms a reflective bottom surface of the package cavity. Each of the first electrode and the second electrode may have an angled cut. The insulating package may be made of a binder-filler composite containing white pigments. The package body may be an all diffusive integrated reflecting surfaces (AR-IRS) package body, and may be used in an encapsulant-free semiconductor package.

Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. A n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second n-type metallic contact layer can be located over a second portion of the n-type contact region, where the second n-type metallic contact layer is formed of a reflective metallic material.

Abstract: To improve the assemblability of a semiconductor device. When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality of projection electrodes of the above-described memory chip is performed based on a result of the recognition, and the above-described memory chip is mounted over the logic chip. At this time, the shape of the recognition range is different from any portion of an array shape of the bumps, as a result, the recognition mark in the shape of the recognition range can be reliably recognized, and alignment of the bumps of the logic chip and the projection electrodes of the above-described memory chip is performed with high accuracy.

Abstract: A light emitting device is disclosed, including a first electrode layer, a second electrode layer, and an organic light emitting layer sandwiched between the first and second electrode layers. The second electrode layer is patterned to form a plurality of electrode patterns arranged with different densities. The organic light emitting layer is subjected to a color separation process to form a plurality of monochromatic blocks that correspond to the electrode patterns, respectively. The electrode patterns are divided into a plurality of electrode pattern groups arranged in an alternate manner. The electrode pattern groups display a same image, and a same voltage is applied to the electrode pattern groups at a same time. Alternatively, the electrode pattern groups display different images, and a same or different voltages are applied to the electrode pattern groups at different times. As such, the light emitting device generates grayscale, full-color, three-dimensional or dynamic images.

Abstract: A method for producing a fluorescent material can be provided. The method includes preparing fluorescent material particles that contain a fluoride having a composition including Mn, at least one selected from the group consisting of alkali metal elements and NH4+, and at least one selected from the group consisting of Group 4 elements and Group 14 elements; causing at least one cation selected from rare-earth elements and a phosphate ion to come into contact with each other in a liquid medium containing the fluorescent material particles to obtain rare-earth phosphate-adhered fluorescent material particles including the fluorescent material particles to which the rare-earth phosphate is adhered; and separating the rare-earth phosphate-adhered fluorescent material particles from the liquid medium.

Abstract: A package structure of an ultraviolet light emitting diode is provided, which includes a substrate, a transparent body, at least one ultraviolet light emitting diode, a connecting element and an ultraviolet shielding layer. The transparent body is disposed on the substrate. The transparent body has a space inside thereof. The at least one ultraviolet light emitting diode is disposed on the substrate and inside the space. The connecting element is disposed between the substrate and the transparent body. The ultraviolet shielding layer is disposed between the transparent body and the connecting element.

Abstract: Disclosed are a light emitting device and a lighting apparatus having the same. The light emitting device includes a plurality of lead frames, a first body having non-transmissive resin material on top surfaces of the lead frames, a second body having transmittance resin material on a top surface of the first body, a light emitting chip on at least one of the lead frames exposed in the first opening of the second body, and a first transmissive layer disposed in the first opening of the second body. The first body and the second body is disposed around the light emitting chip.

Abstract: An LED device has a cap containing one or more quantum dot (QD) phosphors. The cap may be sized and configured to be integrated with standard LED packages. The QD phosphor may be held within the well of the LED package, so as to absorb the maximum amount of light emitted by the LED, but arranged in spaced-apart relation from the LED chip to avoid excessive heat that can lead to degradation of the QD phosphor(s). The packages may be manufactured and stored for subsequent assembly onto an LED device.

Abstract: Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

Abstract: A display device includes: a flexible display including a flexible substrate and a plurality of light emitting elements provided on the flexible substrate; an adhesive layer; and a film attached to the flexible display with the adhesive layer. The adhesive layer is provided avoiding a plurality of blank areas linearly arranged in at least one direction on a surface of the flexible display.

Abstract: A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member.

Abstract: This disclosure provides an OLED substrate and a producing method thereof, a panel, and a display apparatus, and pertains to the field of OLED products and production. The OLED substrate comprises an OLED device and an encapsulating layer, which are located on a first substrate, wherein the encapsulating layer encapsulates the OLED device, and wherein the OLED substrate further comprises a heat-dissipating layer which is provided above the OLED device. By adding a heat-dissipating layer and by means of the good thermal conductivity of the heat-dissipating layer, the heat generated when OLED devices are lit is rapidly dissipated, so as to prolong the service life of OLED devices, such that the service life of OLED panel and in turn the service life of display apparatus are prolonged.

Abstract: The curable resin composition of the present technology includes: (A) a straight-chain organopolysiloxane having at least two silicon-bonded hydrogen atoms and at least one aryl group in one molecule and having an average degree of polymerization of greater than 10; (B) a branched-chain organopolysiloxane having at least three alkenyl groups and at least one aryl group in one molecule; and (C) a hydrosilylation reaction catalyst; wherein a proportion of diphenylsiloxane units relative to an amount of all siloxane units is 10 mol % or greater, and the all siloxane units containing siloxane units derived from the straight-chain organopolysiloxane (A) and the branched-chain organopolysiloxane (B).

Abstract: A phosphor includes a nitride including an alkaline-earth metal element, silicon, and an activator element, wherein the phosphor has a volume average particle diameter ranging from about 50 nm to about 400 nm, and an internal quantum efficiency of greater than or equal to about 60% at an excitation wavelength of 450 nm, the phosphor is represented by a formula M2Si5N8, the M includes one or more alkaline-earth metal element selected from Ca, Sr, Ba, and Mg and including at least Sr, and one or more activator element selected from Eu and Ce and including at least Eu, an amount of the Sr included in the phosphor is about 15 mol % to about 99 mol % based on total moles of the M, and an amount of the activator element included in the phosphor is about 1 mol % to 20 mol % based on the total moles of the M.

Abstract: A light emitting device includes a base having a first lead electrode and a second lead electrode. Each of the first lead electrode and the second lead electrode includes a reflecting layer which includes silver or silver alloy plating containing a sulfur-based gloss agent. A light emitting element is provided on one side of the base and is electrically connected to the first lead electrode and the second lead electrode. The reflecting layer is on the one side of the base. A sealer includes resin and is provided on the one side of the base to seal the light emitting element and at least a part of the first lead electrode and the second lead electrode. A light-transmissive protective film includes an inorganic matter and is provided between the reflecting layer and the sealer.