Abstract: According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: A light-emitting device is disclosed. The light-emitting device comprises a substrate, an ion implanted layer on the substrate, a light-emitting stack layer disposed on the ion implanted layer, and an adhesive layer connecting the substrate with the light-emitting stack layer, wherein the adhesive layer comprises a thin silicon film disposed between the ion implanted layer and the light-emitting layer. This invention also discloses a method of manufacturing a light-emitting device comprising the steps of forming a light-emitting stack layer, forming a thin silicon film on the light-emitting stack layer, providing a substrate, forming an ion implanted layer on the substrate, and providing an electrode potential difference to form an oxide layer between the thin silicon film and the ion implanted layer.

Abstract: The present invention relates to metal complexes of the formula (1) and to the use thereof in organic electroluminescent devices, and to organic electroluminescent devices which comprise these metal complexes.

Abstract: There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; a second n-clad having a carrier density of 1×1018 cm?3 to 5×1018 cm?3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 ?m; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.

Abstract: An organic electro-optical component, with an electrode, counter-electrode, and organic region made up of one or more organic materials, which is in electrical contact and in an active region overlapping with the electrode and the counter-electrode, wherein the electrode and/or the counter-electrode have part electrodes which extend from a part electrode connecting section which is arranged outside of the active region, a distal electrode section is electrically connected via a proximal electrode section to the part electrode connecting section, the distal electrode section is formed at least in sections within the active region, and the proximal electrode section is formed outside of the active region and by means of an electrical pathway, the pathway length of which is larger than the shortest distance between an end of the distal electrode section facing the part electrode connecting section and the part electrode connecting section.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: An iridium complex is disclosed, which has a structure represented by the following formula (I): wherein each of Z1 and Z3 represents an atomic group for forming a nitrogen-containing heteroaryl group or a nitrogen-containing heterocycloalkenyl group; Z2 represents an atomic group for forming an aryl group, a heteroaryl group, a cycloalkenyl group or a heterocycloalkenyl group; Y represents an atomic group for forming a 5-membered nitrogen-containing heterocycloalkenyl group; each of R1, R2, R3 and R4 represents a hydrogen atom or a substituent; m is 1 or 2; a, b and d is 0 or any positive integer; and c is an integer of from 0 to 2.

Abstract: Novel phosphorescent trigonal copper carbene complexes are provided. The complex comprise a carbene ligand coordinated to a three coordinate copper atom. The complex may be used in organic light emitting devices. In particular, the complexes may be especially useful in OLEDs used for lighting applications.

Abstract: Homoleptic square planar complexes [M(N?N)2], wherein two identical N?N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes (“OLEDs”). Improved white organic light emitting diode (“WOLED”) designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) (“Pt(ptp)2”).

Abstract: A first device that may include one or more organic light emitting devices. At least 65 percent of the photons emitted by the organic light emitting devices are emitted from an organic phosphorescent emitting material. An outcoupling enhancer is optically coupled to each organic light emitting device. In one embodiment, the light panel is not attached to a heat management structure. In one embodiment, the light panel is capable of exhibiting less than a 10 degree C. rise in junction temperature when operated at a luminous emittance of 9,000 lm/m2 without the use of heat management structures, regardless of whether the light panel is actually attached to a heat management structure or not. The light panel may be attached to a heat management structure. The light panel may be not attached to a heat management structure.

Abstract: A light-emitting thyristor includes a substrate, a first semiconductor multi-layered mirror of a first conductivity type that is formed on the substrate, a gate layer that is formed on the first semiconductor multi-layered mirror by stacking a plurality of semiconductor light-emitting layers having different peak values of an emission wavelength, and a second semiconductor multi-layered mirror of a second conductivity type that is formed on the gate layer.

Abstract: Novel combination of materials and device architectures for organic light emitting devices are provided. In some aspects, specific charge carriers and solid state considerations are features that may result in a device having an unexpectedly long lifetime. In some aspects, emitter purity is a feature that may result in devices having unexpectedly long lifetime. In some aspects, structural and optical considerations are features that may result in a device having an unexpectedly long lifetime. In some aspects, an emissive layer including an organic phosphorescent emissive dopant and an organic carbazole host material results in devices having an unexpectedly long lifetime.

Abstract: There is provided n organic light-emitting diode luminaire. The luminaire includes a first electrode, a second electrode, and a light-emitting layer therebetween. The light-emitting layer includes a small molecule host material having dispersed therein a first dopant having a first emitted color and a second dopant having a second emitted color. The overall emission color is white.

Abstract: Disclosed is an organic electroluminescent device having long life, while exhibiting high luminous efficiency. Also disclosed are an illuminating device and a display, each using such an organic electroluminescent device. In the organic electroluminescent device, a compound represented by the general formula (A) which is suitable as a host material for a phosphorescent metal complex is used at least in one sublayer of a light-emitting layer.

Abstract: An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.

Abstract: A semiconductor device may include a doped semiconductor region wherein a dopant concentration of the semiconductor region is modulated over a plurality of intervals. Each interval may include at least one portion having a relatively low dopant concentration and at least one portion having a relatively high dopant concentration. A plurality of delta doped layers may be included in the plurality of intervals. Related methods are also discussed.

Abstract: According to one embodiment, there is provided a compound represented by Formula (1): where Cu represents a copper, PR1R2R3 is a phosphine compound coordinating with Cu, where R1, R2, R3, R4 and R5 may be the same or different, and represent a linear, branched or cyclic alkyl group having 1-6 carbon atoms or an aromatic cyclic group which may have a substituent, R6, R7, R8 and R9 each independently represents a halogen atom, cyano group, nitro group, linear, branched or cyclic alkyl group having 1-6 carbon atoms or H, and X is F, Cl, Br or I.

Abstract: Disclosed herein is a red phosphorescent compound of the following Formula 1: wherein is includes a phenyl part and a quinoline part, the quinoline part has one substituent selected from a C1-C4 alkoxy group and the phenyl part has substituents independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, and is selected from 2,4-pentanedione, 2,2,6,6-tetramethylheptane-3,5-dione, 1,3-propanedione, 1,3-butanedione, 3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, and 2,2-dimethyl-3,5-hexanedione.

Abstract: This invention pertains to light emitting materials comprising novel ortho-metalated transition metal complexes [C^N]2ML comprising two orthometalated ligands having imidazole moieties and an ancillary ligand of ?-diketonate type. The ortho-metalated transition metal complexes are represented by formula (I): It has been surprisingly found that when the metal has bound thereto both orthometalated ligands comprising imidazole moieties and an ancillary ligand of ?-diketonate type, the ligands advantageously participate in the emission process, significantly broadening emission in the visible region and enabling appreciable improvement of the white emission efficiency of complexes [C^N]2ML. Additional objects of the invention are the use of the light emitting materials and organic light emitting device comprising the light emitting material.

Abstract: Disclosed herein are red phosphorescent compounds of the following one of Formulas 1 to 3 wherein Formula 1 R1 and R2 are independently a C1-C4 alkyl group, R3, R4, R5 and R6 are independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, wherein Formula 2 R1, R2, R3 and R4 are independently selected from C1-C4 alkyl groups and C1-C4 alkoxy groups, wherein Formula 3 R1, R2, R3 and R4 are independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, and wherein is selected from 2,4-pentanedione, 2,2,6,6,-tetramethylheptane-3,5-dione, 1,3-propanedione, 1,3-butanedione, 3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione and 2,2-dimethyl-3,5-hexanedione.

Abstract: Organometallic compounds comprising a germanium-containing substituent are provided. The compounds may be used in organic light emitting devices to provide improved device efficiency, line shape and lifetime. In particular, the compounds comprise a phenylquinoline or phenylisoquinoline ligand having a germanium-containing substituent on the quinoline or isoquinoline portion of the ligand. These compounds may be advantageously used as red emitters in the emissive layer of organic light emitting devices.

Abstract: An organic EL device 100 including a plurality of emitting layers (15) and (17) between a cathode (18) and (19) and an anode (12), each of the emitting layers (15) and (17) made of a host material having a triplet energy gap of 2.52 eV or more and 3.7 eV or less, and a dopant having a light emitting property related to a triplet state, the dopant containing a metal complex with a heavy metal.

Abstract: According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.

Abstract: A radiation-emitting device with a first electrode, a first emission layer, a second emission layer and a second electrode. The invention additionally relates to a method of producing a radiation-emitting device.

Abstract: A semiconductor light emitting device includes an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer. The first delta-doped layer, the second nitride semiconductor layer, the second delta-doped layer, and the third nitride semiconductor layer are doped with an n-type dopant.

Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).

Abstract: Methods and systems evaluate an integrated circuit design for power consumption balance and performance balance, using a computerized device. Based on this process of evaluating the integrated circuit, the methods and systems can identify first sets of integrated circuit transistor structures within the integrated circuit design that need reduced power leakage and second sets of integrated circuit transistor structures that need higher performance to achieve the desired power consumption balance and performance balance. With this, the methods and systems alter the integrated circuit design to include implantation of a first dopant into a substrate before a gate insulator formation for the first sets of integrated circuit transistor structures; and alter the integrated circuit design to include implantation of a second dopant into the substrate before a gate insulator formation for the second sets of integrated circuit transistor structures.

Abstract: One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process.

Abstract: A material for an organic electroluminescence device containing at least phosphorescent metal complex A and phosphorescent metal complex B, metal complex A and metal complex B are both organic metal complexes containing a metal having an atomic weight of 40 or more and a ligand, metal complex A has a specific structure, and metal complex B has the same structure with metal complex A except that one or more atoms directly bonding to ligand structures are substituted with atoms belonging to the same group of the atoms and having a greater atomic weight, and ratio of the content of metal complex B to the content of metal complex A is 0.005% by mass or more and 2% by mass or less.

Abstract: An iridium phosphorescent dendrimer represented by Formula 1: wherein A is a carbazole-based dendron. Also disclosed is a method of preparing the iridium phosphorescent dendrimer and an electroluminescent device including the iridium phosphorescent dendrimer.

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: An organic light emitting device with improved light emitting efficiency, the organic light emitting device includes a substrate, a first electrode arranged on the substrate, a second electrode arranged to face the first electrode, an organic light-emitting layer arranged between the first electrode and the second electrode, an electron transport layer arranged between the organic light-emitting layer and the second electrode, wherein the electron transport layer includes a multi-layer structure that includes at least one first layer and at least two second layers, wherein ones of said at least one first layer and ones of said at least two second layers are alternately stacked, wherein ones of the at least two second layers are arranged at both opposite ends of the electron transport layer, each of the at least two second layers having a lower electron mobility than that of each of the at least one first layer.

Abstract: A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.

Abstract: A material for an organic electroluminescence device including a phosphorescent metal complex containing a monoanionic bidentate ligand represented by the following formula (A1-1) or formula (A3-1) as defined in the specification and a non-radiative metal having an atomic weight of 40 or more, an organic electroluminescence device including the material for an organic electroluminescence device, and a light emitting unit, a display unit and an illumination unit each including the organic electroluminescence device are provided.

Abstract: A p-type MgxZn1-xO-based thin film (1) is formed on a substrate (2) made of a ZnO-based semiconductor. The p-type MgxZn1-xO-based thin film (1) is composed so that X as a ratio of Mg with respect to Zn therein can be 0?X<1, preferably 0?X?0.5. In the p-type MgZnO thin film (1), nitrogen as p-type impurities which become an acceptor is contained at a concentration of approximately 5.0×1018 cm?3 or more. The p-type MgZnO thin film (1) is composed so that n-type impurities made of a group IV element such as silicon that becomes a donor can have a concentration of approximately 1.0×1017 cm?3 or less. The p-type MgZnO thin film (1) is composed so that n-type impurities made of a group III element such as boron and aluminum which become a donor can have a concentration of approximately 1.0×1016 cm?3 or less.

Abstract: A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)?5×1018/cm3; and 0.01%?(Concentration of Ti)/(Concentration of Al)?20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)?5×1018/cm3; and 1×1017/cm3?(Concentration of Ti)?1×1018/cm3.

Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

Abstract: Provided is a light emitting apparatus. The light emitting apparatus includes a substrate; a light emitting device on the substrate; a fluorescent layer formed on the substrate and the light emitting device to surround the light emitting device; an encapsulant resin layer formed on the substrate and the fluorescent layer to surround the fluorescent layer; and a lens disposed on the light emitting device and supported by the substrate, wherein the lens includes a lens body having a first recess formed at a center of a top surface of the lens body and a second recess formed at a center of a bottom surface of the lens body, and a lens supporter provided at the bottom surface of the lens body to support the lens body such that the lens body is spaced apart from the substrate.

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Abstract: A one time programmable memory cell having a gate, a gate dielectric layer, a source region, a drain region, a capacitor dielectric layer and a conductive plug is provided herein. The gate dielectric layer is disposed on a substrate. The gate is disposed on the gate dielectric layer. The source region and the drain region are disposed in the substrate at the sides of the gate, respectively. The capacitor dielectric layer is disposed on the source region. The capacitor dielectric layer is a resistive protection oxide layer or a self-aligned salicide block layer. The conductive plug is disposed on the capacitor dielectric layer. The conductive plug is served as a first electrode of a capacitor and the source region is served as a second electrode of the capacitor. The one time programmable memory (OTP) cell is programmed by making the capacitor dielectric layer breakdown.

Abstract: An organic electroluminescent device (1) including an anode (2), a cathode (6), and at least a first layer (3), a second layer (4), and a third layer (5) provided between the anode (2) and the cathode (6) in that order from the anode side. At least one of the first to third layers (3), (4), and (5) includes a phosphorescent compound. At least one of the first to third layers (3), (4), and (5) is an emitting layer. At least three compounds respectively forming the first layer (3), the second layer (4), and the third layer (5) other than the phosphorescent compound are compounds of the following formula (1). wherein R1 to R7 each represent a hydrogen atom or a substituent, provided that adjacent substituents may form a ring.

Abstract: Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 ?m or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.

Abstract: A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

Abstract: A semiconductor light-emitting element includes a first semiconductor layer having a first conduction type, a second semiconductor layer having a second conduction type, an active layer provided between the first and second semiconductor layers, a polarity inversion layer provided on the second semiconductor layer, and a third semiconductor layer having the second conduction type provided on the polarity inversion layer. Crystal orientations of the first through third semiconductor layers are inverted, with the polarity inversion layer serving as a boundary. The first and third semiconductor layers have uppermost surfaces made from polar faces having common constitutional elements. Hexagonal conical protrusions arising from a crystal structure are formed at outermost surfaces of the first and third semiconductor layers. The first through third semiconductor layers are made from a wurtzite-structure group III nitride semiconductor, and are layered along a C-axis direction of the crystal structure.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a first-conductivity semiconductor layer, a second-conductivity semiconductor layer, an active layer arranged between the first-conductivity semiconductor layer and the second-conductivity semiconductor layer, the active layer including at least one pair of a quantum well layer and a quantum barrier layer, a plurality of first layers arranged on at least one of an interface between the first-conductivity semiconductor layer and the active layer and an interface between the second-conductivity semiconductor layer and the active layer, the first layers having different energy band gaps or different thicknesses, and second layers each interposed between adjacent ones of the first layers, the second layers exhibiting an energy band gap higher than the energy band gaps of the first layers.

Abstract: A material for an organic photoelectric device includes a compound represented by the following Formula 1:

Abstract: In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.