Abstract: A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010 atoms/cm2 to 200×1010 atoms/cm2 of a p-type metal element. The group III nitride substrate has a stable surface.

Abstract: Disclosed are a nitride semiconductor light emitting device and a method for manufacturing the same. The nitride semiconductor light emitting device includes a first nitride layer, an active layer including at least one delta-doping layer on the first nitride layer through delta-doping, and a second nitride layer on the active layer.

Abstract: A zinc-blende nitride semiconductor free-standing substrate has a front surface and a back surface opposite the front surface. The distance between the front and back surfaces is not less than 200 ?m. The area ratio of the zinc-blende nitride semiconductor to the front surface is not less than 95%.

Abstract: The present invention relates to phosphorescent stacked OLEDs having an interlayer.

Abstract: An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type doped semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first-type doped semiconductor layer, and a second-type doped semiconductor layer disposed on the active layer and having a first top surface. The wall structure is disposed on the first-type doped semiconductor layer that is not covered by the active layer and surrounds the active layer. Besides, the wall structure has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Additionally, the electrodes are disposed on and electrically connected with the first-type doped semiconductor layer and the second-type doped semiconductor layer.

Abstract: Provided are organic n-doped electron transport layers comprising at least one electron transport material and at least one electron rich dopant material and organic p-doped hole transport layers comprising at least one hole transport material and at least one electron deficient dopant material.

Abstract: Provided are a polyvinyl pyrrole host material emitting highly efficient phosphorescence, a luminescent layer using the material, and an organic electroluminescent display device. The polyvinyl pyrrole host material shows highly efficient luminescence having improved energy transfer, and thus is useful for an organic electroluminescent display device and other various light emitting devices.

Abstract: A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.

Abstract: An organic electroluminescence device includes a plurality of organic semiconductor layers including an organic light-emitting layer and layered or disposed between a pair of anode and cathode opposed to each other. The device includes n-type-dopant-containing electron transport layer disposed between the cathode and the organic light-emitting layer. The n-type-dopant-containing electron transport layer includes an organic compound capable of transporting electrons as a first component which mixed with an n-type dopant of an electron donor of metallic atom or ion thereof as a second component. The organic electroluminescence device further includes an n-type-dopant blocking layer having an interface contacting with the n-type-dopant-containing electron transport layer to block the n-type dopant. The n-type-dopant blocking layer includes a heavy atom compound including at least one kind of heavy atoms with an atomic weight of 79 or more.

Abstract: The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material.

Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.

Abstract: A display device comprises an anode, a cathode, and a luminescent region disposed between the anode and the cathode, wherein the anode comprises a metal-organic mixed layer operatively combined with an electron-accepting material. An anode may comprise a mixture of a metal-organic mixed layer and an electron-accepting material within a single layer of the anode. Alternatively, the anode may have a multilayer configuration comprising a metal-organic mixed layer and a buffer layer adjacent the metal-organic mixed layer, wherein the buffer layer comprises an electron-accepting material and optionally a hole transport material.

Abstract: A semiconductor laser device includes a supporting substrate; a semiconductor laser device portion which is formed on a surface of the supporting substrate, and which includes a pair of cavity surfaces; an adhesive layer with which the supporting substrate and the semiconductor laser device portion are adhered to each other; and areas, in which no adhesive layer exists, the areas being near the ends respectively of the cavity surfaces, the ends being closer to the supporting substrate.

Abstract: Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.

Abstract: The present invention provides an organic EL device utilizing phosphorescence which can be driven at a low voltage, which realizes high luminance and high efficiency, and which has a long lifetime. The organic EL device of the present invention includes an organic light-emitting layer composed of at least a host material and a dopant, wherein the dopant is a phosphorescent compound containing a halogen atom, and the host material is a linear aromatic compound having no aromatic substituent at a side thereof.

Abstract: A nitride semiconductor device includes: a semiconductor substrate; a p-type semiconductor layer formed over the semiconductor substrate, made of a nitride semiconductor, and containing first impurities; and an insulating film contacting the p-type semiconductor layer and having an impurity region containing second impurities for trapping hydrogen. Since residual hydrogen in the p-type semiconductor layer is trapped in the impurity region, the hydrogen concentration in the impurity region is higher than that in the insulating film excluding the impurity region.

Abstract: Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

Abstract: A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer include an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration between 8.0×1017 cm?3 and 1.5×1018 cm?3.

Abstract: The present invention relates to novel compounds for electronic material, and organic electroluminescent devices or organic solar cells comprising the same. Specifically, the compounds for electronic material according to the invention are characterized in that they are represented by Chemical Formula (1): Since the compounds for electronic material, when being applied to an organic electroluminescent device, show good luminous efficiency and excellent life property of material, OLED's having very good operation life can be manufactured therefrom.

Abstract: A substituted fluoranthene, a light emitting layer including the substituted fluoranthene, a diode including the substituted fluoranthene, and a visual display unit including the substituted fluoranthene.

Abstract: An organic EL device 100 including a plurality of emitting layers (15) and (17) between a cathode (18) and (19) and an anode (12), each of the emitting layers (15) and (17) made of a host material having a triplet energy gap of 2.52 eV or more and 3.7 eV or less, and a dopant having a light emitting property related to a triplet state, the dopant containing a metal complex with a heavy metal.

Abstract: A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light emitted by the light source and emit light of a different wavelength, and a plurality of second grains. For example, the first grains may be grains of luminescent material and the second grains may be grains of a luminescent material host matrix without activating dopant.

Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.

Abstract: A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid, material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

Abstract: Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.

Abstract: The present invention relates to novel organic electroluminescent compounds, and organic electroluminescent devices employing the same as electroluminescent material. Specifically, the organic electroluminescent compounds according to the invention are characterized in that they are represented by Chemical Formula (1): wherein, A and B independently represent CR7 or N, provided that both A and B cannot be CR7 or N at the same time; and X is O or S.

Abstract: A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0?x<1, 0<y?1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0?x<1, 0<y?1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.

Abstract: A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1?x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 ?.

Abstract: The present invention describes novel organometallic compounds which are phosphorescent emitters. Such compounds can be used as active components (=functional materials) in a variety of different applications which can in the widest sense be considered part of the electronics industry. The compounds of the invention are described by the formulae (I), (Ia), (II) and (IIa).

Abstract: The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables control of the micro/nano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro/nano-structured mode selective layer for controlling the VCSELs transverse electromagnetic modes.

Abstract: In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm?3 and 5×1019 cm?3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm?3.

Abstract: Radiation occurs when current is injected into an active layer from electrodes. A pair of clad layers is disposed sandwiching the active layer, the clad layer having a band gap wider than a band gap of the active layer. An optical absorption layer is disposed outside at least one clad layer of the pair of clad layers. The optical absorption layer has a band gap wider than the band gap of the active layer and narrower than the band gap of the clad layer. A spread of a spectrum of radiated light can be narrowed.

Abstract: The present invention provides a luminescent device using a luminescent material which has high luminescence efficiency and high stability, and is available at a low cost. The luminescent device is characterized in that as a luminescent material is used a binuclear copper coordination compound having a partial structure represented by the general formula (1): Cu-A-Cu, wherein Cu is a copper ion and A is a bidentate ligand.

Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

Abstract: The present organic EL devices have at least one luminescent layer and a cathode sequentially provided on their anode, which luminescent layer contains an electron-transporting material, a hole-transporting material, and a luminescent dopant. Preferably, an electron-transporting layer is further provided between the luminescent layer and the cathode. According to the present invention, organic EL devices can be provided giving improved whiteness, colour reproducibility, luminescent efficiency, and lifetime compared to conventional ones.

Abstract: A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon.

Abstract: The present invention provides a light-emitting diode made of a polymer nanocomposite doped with quantum dots to improve luminescence efficiency and to increase stability and electrical characteristics.

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract: Disclosed is a full color organic electroluminescence display device, comprising a substrate; a first electrode; organic film layers including red, green and blue emission layers and an electron transporting layer; and a second electrode. The thickness of the electron transporting layer, which is preferably formed as a common layer, is different in the red and green emission regions from that in the blue emission region so that the device has an excellent purity of color and improved luminous efficiency of red and green colors.

Abstract: A semiconductor light emitting device including a first electrode contact layer, an active layer formed on the first electrode contact layer, a second electrode contact layer formed on the active layer, and a first roughness layer formed on at least one of the first and second electrode contact layers.

Abstract: A display device comprising a light-absorbing layer comprising metal nanoparticles in a matrix material. Suitable matrix materials include organic materials, inorganic materials, polymeric materials, and combinations thereof. The metal nanoparticles may have various regular or irregular shapes and/or two-dimensional or three-dimensional structures. The metal nanoparticles may have a particle size of from about 2 to about 20 nm. In embodiments, the particle size distribution of the nanoparticles does not exceed +/?75%. The light-absorbing layer may have a multiple layer configuration comprising 2 or more individual light-absorbing layers. The light-absorbing layer(s) reduces the reflection of ambient light in a display device.

Abstract: A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.

Abstract: An organic electroluminescent device including an anode on a substrate, an organic luminescent layer on the anode and a cathode on the organic luminescent layer is provided.

Abstract: An organic light emitting device structure having an organic light emitting device (OLED) over a substrate, where the OLED has, for example, an anode, a hole transporting layer (HTL), a first electron transporting layer (ETL) that is doped with a phosphorescent material, a second electron transporting layer (ETL), and a cathode. The OLEDs of the present invention are directed, in particular, to devices that include an emissive layer comprised of an electron transporting host material having a triplet excited state energy level that is higher than the emissive triplet excited state energy level of the phosphorescent dopant material.