Abstract: An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal source composition on the first SiO2layer, and a second SiO2 layer on the Group II metal source composition layer.

Abstract: An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage. The inventive method for producing a p-type Group III nitride semiconductor comprises, during lowering temperature after completion of growth of a Group III nitride semiconductor containing a p-type dopant, immediately after completion of the growth, starting, at a temperature at which the growth has been completed, supply of a carrier gas composed of an inert gas and reduction of the flow rate of a nitrogen source; and stopping supply of the nitrogen source at a time in the course of lowering the temperature.

Abstract: A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer contacting the p-type cladding layer or the n-type cladding layer and comprising a first film that comprises a transparent conductive zinc oxide having a one-dimensional nano structure, wherein the one-dimensional nano structure is at least one selected from a nano-column, a nano rod, and a nano wire.

Abstract: A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an AlxGa1-xAs layer (x?0.6) formed between the substrate and the nitride semiconductor layer. The nitride compound semiconductor layer is formed of a nitride compound in a group III to a group V.

Abstract: The present invention presents a nitride semiconductor light emitting device including a substrate, a first n-type nitride semiconductor layer, a light emitting layer, a p-type nitride semiconductor layer, a p-type nitride semiconductor tunnel junction layer, an n-type nitride semiconductor tunnel junction layer, and a second n-type semiconductor layer, in which the p-type and n-type nitride semiconductor tunnel junction layers form a tunnel junction, at least one of the p-type and n-type nitride semiconductor tunnel junction layers contains In, at least one of In-containing layers contacts with a layer having a larger band gap than the In-containing layer, and at least one of shortest distances between an interface of the In-containing layer and the layer having a larger band gap and an interface of the p-type and n-type nitride semiconductor tunnel junction layers is less than 40 nm.

Abstract: The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: A diode with low substrate current leakage and suitable for BiCMOS process technology. A buried layer is formed on a semiconductor substrate. A connection region and well contact the buried layer. Isolation regions are adjacent to two sides of the buried layer, each deeper than the buried layer. The isolation regions and the buried layer isolate the connection zone and the well from the substrate. The first doped region in the well is a first electrode. The well and the connection region are electrically connected, acting as a second electrode.

Abstract: In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.

Abstract: Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

Abstract: Osmium complexes having the formula [Os(II) (N—N)2L—L]2+ 2A? (or A2?), or [Os(II) N—N(L—L)2]2+ 2A? (or A2?), where N—N is a bipyridine or phenanthroline ligand, L—L is a ?-acid bidentate ligand, and A is counter ion.

Abstract: A light source apparatus and a fabrication method thereof can prevent light interference between light emitting devices adjacent to each other by forming a groove in a sub-mount and bonding a light emitting device to the groove, enhance heat radiating effect as well as luminous efficiency by collecting light emitted from the side of the light emitting device toward the front of the light source apparatus, reduce the process time and costs and increase reliability by directly connecting the sub-mount to the stem by the first electrode and the second electrode which pass through holes of the sub-mount, and extend a life span of the light emitting device because of the enhanced heat radiating effect.

Abstract: In order to provide a light emitting device which consistently emits light at the time of continuous driving in addition to obtain light emission having a high color purity in each of red, green and blue, a light emitting element according to the present invention, in which an organic compound film comprising a hole transporting material, an electron transporting material, a first impurity (first doping material), and a second impurity (second doping material) is provided between an anode and a cathode, is characterized in that the organic compound film is laminated with a first mixed region comprising the hole transporting material and the first impurity, a hole transporting region comprising the hole transporting material, a second mixed region comprising the electron transporting material and the second impurity, and an electron transporting region comprising the electron transporting material in order from the side of the anode.

Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Abstract: A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract: The object of the present invention is to provide a light-emitting device that emits phosphorescence with high efficiency. The light-emitting device of the present invention includes a host containing two kinds of dopants, wherein a dopant having a longer maximum-emission wavelength is doped in a low concentration and has a substituent.

Abstract: Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that are insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an electron withdrawing layer composed of a Lewis acid compound formed between the source and drain electrodes and the organic semiconductor layer. Charges can easily accumulate so that a channel doping effect occurs in the semiconductor layer, thus preventing the formation of an energy barrier and increasing the number of carriers that are injected into a channel. As a result, a TFT having a low contact resistance, an large number of injected carriers, and good charge mobility can be obtained.

Abstract: The organic EL light emitting device of the invention has an organic EL light emitting layer (3a, 3b, 3c) and an electrode (1, 4) for applying a voltage to the organic EL light emitting layer. The organic EL light emitting layer includes a hyperbranched polymer layer having hyperbranched macromolecules uniaxially aligned with a degree of alignment of 0.95 or more, and emits light with a high emission polarization ratio.

Abstract: A light-emitting compound that can be easily applied to vacuum vapor deposition and exhibit long wavelength light is disclosed. Further, a light-emitting element without inferior luminescence properties due to the carbonization of a light-emitting compound during vapor deposition; and a light-emitting device that is composed of the light-emitting elements are also disclosed. A pyran derivative is represented by the following general formula 1: wherein R1 is a hydrogen element or an alkoxy group.

Abstract: A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.

Abstract: Novel 4,5-di(het)aryl-substituted 2-(N,N-di(het)arylamino)-thiazole derivatives of general structure (a), whereby the following applies: R1, R2and R3 and R4, independent of one another, are each a monofunctional (het)aryl system; R1 can additionally be a corresponding bifunctional (het)arylene system; R3 can additional signify R7, whereby R7 represents a chemical bond or a bifunctional (het)arylene system, or R3 can be one of the following groupings (b) and (c); R7 represents a chemical bond or a bifunctional (het)arylene system, and; R4 can also be H or (d).

Abstract: There is disclosed a substituted anthryl derivative is represented by the following general formula (1).

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract: UV-blue excitable green luminescent material including an Eu-doped oxynitride host lattice with general composition MSi2O2N2, wherein M is at least one of an alkaline earth metal chosen from the group Ca, Sr, Ba.

Abstract: The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.

Abstract: A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.

Abstract: An organic electroluminescent element comprising: a pair of electrodes; and at least one organic layer provided between the pair of electrodes, at least one of the at least one organic layer being a light emitting layer, wherein the light emitting layer comprises at least one transition metal complex represented by the formula (1), (2), (3), (4) or (5) as defined herein or an iridium complex represented by the formula (A), (6), (7) or (8) as defined herein.

Abstract: An organic light emitting device having a light emitting layer. The light emitting layer comprises an asymmetrically organometallic chelating complex in the amount of A by weight, a polyamine compound having the chemical formula containing two or more tertiaryamines in the amount of B by weight, and a phosphorescent material in the amount of C by weight, where C is much less than the sum of A and B.

Abstract: An organic electroluminescent device including an anode (1), a first emitting layer (3), a carrier barrier layer (4), a second emitting layer (5), and a cathode (7) stacked in that order; the first emitting layer (3) including a host material of a compound represented by X—(Y)n, and a dopant material of a compound containing a fluoranthene skeleton or a perylene skeleton; the affinity level of the carrier barrier layer (4) being smaller than the affinity level of the second emitting layer (5) in an amount of 0.2 eV or more; and the ionization potential (Ie1) of the carrier barrier layer (4) and the ionization potential (Ih1) of the first emitting layer (3) satisfying Ie1<Ih1+0.1 (eV).

Abstract: Provided are a high-efficiency phosphorescent multinuclear copper complex and an organic electroluminescent device using the complex. The multinuclear copper complex can be used to form an organic layer of an organic electroluminescent device, and the organic electroluminescent device using the complex can emit light in the yellow to red wavelength region of 560 nm to 630 nm as a high-efficiency photoluminescent material, and provides a high brightness and a low turn-on voltage.

Abstract: Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

Abstract: In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region of local crystal modifications inducing localized strain that increases the bandgap of the first Group IV semiconductor and creates a conduction band energy barrier against transport of electrons across the p-region. The n-region includes a second Group IV semiconductor that has a bandgap and is doped with an n-type dopant, and a second region of local crystal modifications inducing localized strain that increases the bandgap of the second Group IV semiconductor and creates a valence band energy barrier against transport of holes across the n-region.

Abstract: The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0?X1?1) layer 5 and a second AlX2Ga1-X2N semiconductor (0?X2?1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0?X1?1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0?X2?1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

Abstract: An organic electroluminescent device comprising: a pair of electrodes; and at least one organic compound layer between the pair of electrodes, the at least one organic compound layer including a light emitting layer, wherein the light emitting layer contains at least one host material and at least one luminescent material, and the host material is a metal complex containing a metal in groups 4 to 11 or periods 5 to 6 of a Periodic Table.

Abstract: Organic light emitting devices are described wherein the emissive layer comprises a host material containing an emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the heterostructure, and the emissive molecule is selected from the group of phosphorescent organometallic complexes, including cyclometallated platinum, iridium and osmium complexes. The organic light emitting devices optionally contain an exciton blocking layer. Furthermore, improved electroluminescent efficiency in organic light emitting devices is obtained with an emitter layer comprising organometallic complexes of transition metals of formula L2MX, wherein L and X are distinct bidentate ligands. Compounds of this formula can be synthesized more facilely than in previous approaches and synthetic options allow insertion of fluorescent molecules into a phosphorescent complex, ligands to fine tune the color of emission, and ligands to trap carriers.

Abstract: In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-type InGaN and a DBR layer 25 made of dielectric are formed on and below a InGaN active layer 23, respectively, each of which forms a reflection surface vertical to the z axis. By forming a reflection surface vertical to the z axis at each of on and above the active layer 23, a resonator is obtained. Here optical distance between two reflection facets are arranged to an integral multiple of half a oscillation wavelength. Consequently, the present invention enables to produce a semiconductor laser of a surface emitting type easier by far compared with a conventional invention.

Abstract: The present invention relates to an organic electroluminescent device with a light-emitting layer, the light-emitting layer comprising a photo-crosslinkable conductive polymeric host material suitable for facilitating full-color display by spin coating; and at least one small-molecule light-emitting material to achieve high power efficiency. The color-purity of device of the present invention is independent of the distribution of molecular weight of the polymer in the light-emitting layer.

Abstract: An organic compound comprising a complex fluorene structure represented by the following Formula: wherein: X1, X2, X3, and X4 include carbon atoms and at least one nitrogen atom; R1, R2, R3, and R4 are substituents each being individually hydrogen, or amino, or alkyl, or alkenyl, or alkynyl, or alkoxy of from 1 to 40 carbon atoms; aryl or substituted aryl of from 6 to 60 carbon atoms; or heteroaryl or substituted heteroaryl of from 4 to 60 carbons; or F, Cl, or Br; or a cyano group; or a nitro group; or R3, or R4 or both are groups that form fused aromatic or heteroaromatic rings; or R1 and R2 together form a cyclic ring having 3 to 20 carbon, nitrogen, sulfur or oxygen atoms; or R1 and R2 together form a double bond moiety.

Abstract: A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x?0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.

Abstract: Organic light emitting devices are disclosed, which comprise a heterostructure for producing electroluminescence, wherein the heterostructure comprises an emissive layer containing a phosphorescent dopant compound.

Abstract: Organic light emitting devices are Disclosed which are comprised of a heterostructure for producing electroluminescence wherein the heterostructure is comprised of an emissive layer containing a phosphorescent dopant compound.

Abstract: A material for organic electroluminescence device with specific structure. An an organic electroluminescence device comprising a cathode, an anode and an organic thin film layer which is sandwiched between the cathode and the anode and comprises at least one layer, wherein at least one layer in the organic thin film layer contains a material for the organic electroluminescence device described above. An organic electroluminescence device with excellent efficiency of light emission, without pixel defects, which is superior in heat resistance and prolonged lifetime is obtained.

Abstract: An object is to provide an inorganic light-emitting element capable of low-voltage driving. Moreover, another object is to provide a display device and an electronic appliance with low power consumption by using this light-emitting element. The light-emitting element includes a layer containing a light-emitting substance and an electron supplying layer which is in contact with the layer containing a light-emitting substance, between a first electrode and a second electrode. The layer containing a light-emitting substance includes at least an impurity element and a base material which is a sulfide, an oxide, or a nitride. The electron supplying layer includes a substance with a lower work function than that of the base material.

Abstract: The present invention provides a tri-gate lower power device and method for fabricating that tri-gate semiconductor device. The tri-gate device includes a first gate [455] located over a high voltage gate dielectric [465] within a high voltage region [460], a second gate [435] located over a low voltage gate dielectric [445] within a low voltage core region [440] and a third gate [475] located over an intermediate core oxide [485] within an intermediate core region [480]. One method of fabrication includes forming a high voltage gate dielectric layer [465] over a semiconductor substrate [415], implanting a low dose of nitrogen [415a] into the semiconductor substrate [415] in a low voltage core region [440], and forming a core gate dielectric layer [445] over the low voltage core region [440], including forming an intermediate core gate dielectric layer [485] over an intermediate core region [480].

Abstract: An object of the invention is to provide an organic electroluminescent element with high luminance and long half life and a display employing the organic EL element. An organic electroluminescent element comprising a component layer including at least one light emission layer capable of emitting phosphorescence, wherein the component layer contains at least one specific carbazole derivative.

Abstract: The present invention relates to red color emitting compounds for an organic electroluminescent device (OELD), particularly to red color emitting compounds represented by the following formula (1) having high luminescence efficiency and enhanced thermal-stability: R1—CH?CH—X—CH?CH—R2 wherein, R1, R2 and X each are as defined below.

Abstract: A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.

Abstract: A light-emitting semiconductor component has a number of layers that predominantly contain elements of groups II and VI of the Periodic Table. The layers are applied epitaxially on a substrate, preferably made of InP, and include a p-doped covering layer and an n-doped covering layer having lattice constants of which correspond to that of the substrate. An undoped active layer lies between the two covering layers. The active layer forms a quantum well structure in interaction with its neighboring layers, a lattice constant of the active layer being made smaller than that of the neighboring layers.

Abstract: The invention relates to a light source comprising a light-emitting element, which emits light in a first spectral region, and comprising a luminophore, which comes from the group of alkaline-earth orthosilicates and which absorbs a portion of the light emitted by the light source and emits light in another spectral region. According to the invention, the luminophore is an alkaline-earth orthosilicate, which is activated with bivalent europium and whose composition consists of: (2-x-y)SrOx(Ba, Ca)O (1-a-b-c-d)SiO2aP2O5bAl2O3cB2O3dGeO2: y Eu2+ and/or (2-x-y)BaOx((Sr, Ca)O (1-a-b-c-d)SiO2aP2O5bAl2O3cB2O3dGeO2: y Eu2+. The desired color (color temperature) can be easily adjusted by using a luminophore of the aforementioned type.