Abstract: An imaging element includes a photoelectric conversion section that includes a first electrode, a photoelectric conversion layer, and a second electrode stacked on one another. An inorganic oxide semiconductor material layer is formed between the first electrode and the photoelectric conversion layer. The inorganic oxide semiconductor material layer includes indium (In) atoms, gallium (Ga) atoms, tin (Sn) atoms, and zinc (Zn) atoms.

Abstract: Disclosed herein is a method for forming a radiation detector. The method comprises forming a radiation absorption layer and bonding an electronics layer to the radiation absorption layer. The electronics layer comprises an electronic system configured to process electrical signals generated in the radiation absorption layer upon absorbing radiation photons. The method for forming the radiation absorption layer comprises forming a trench into a first surface of a semiconductor substrate; doping a sidewall of the trench; forming a first electrical contact on the first surface; forming a second electrical contact on a second surface of the semiconductor substrate. The second surface is opposite the first surface. The method further comprises dicing the semiconductor substrate along the trench.

Abstract: Disclosure herein relates to a unit pixel structure incorporating multiple photodiodes is disclosed. The unit pixel is formed in a semiconductive stack. The unit pixel includes a sensor well region, a floating diffusion region, a first gate structure and a second gate structure. The first gate structure is disposed over the semiconductive stack and the second gate structure extends into the semiconductive stack.

Abstract: There is provided a solid state image sensor including a photoelectric conversion unit formed and embedded in a semiconductor substrate, an impurity region that retains an electric charge generated by the photoelectric conversion unit, and a transfer transistor that transfers the electric charge to the impurity region. A gate electrode of the transfer transistor is formed in a depth direction toward the photoelectric conversion unit in the semiconductor substrate, from a surface of the semiconductor substrate on which the impurity region is formed. A channel portion of the transfer transistor is surrounded by the gate electrode in two or more directions other than a direction of the impurity region, as seen from the depth direction.

Abstract: A display device includes a frame, a display module, and a plastic structure. The frame includes a bottom plate and a sidewall surrounding the bottom plate. The bottom plate has a concave surface. The display module is disposed above the frame and has a curved bottom surface. The sidewall of the frame is located at an outer edge of the display module. The concave surface of the bottom plate faces toward the curved bottom surface of the display module. The plastic structure is disposed at the sidewall of the frame and has a supporting surface facing away from the sidewall of the frame. The supporting surface is disposed between the sidewall of the frame and the display module. The plastic structure extends between and conformal to the curved bottom surface of the display module and the concave surface of the bottom plate of the frame.

Abstract: The present disclosure relates to a solid-state imaging device, a driving method for the same, and an electronic appliance, and an object is to provide a solid-state imaging device that can achieve the pixel miniaturization and the global shutter function with higher sensitivity and saturated charge amount. Another object is to provide an electronic appliance including the solid-state imaging device. In a solid-state imaging device 1 having the global shutter function, a first charge accumulation unit 18 and a second charge accumulation unit 25 are stacked in the depth direction of a substrate 12, and the transfer of the signal charges from the first charge accumulation unit 12 to the second charge accumulation unit 25 is conducted by a vertical first transfer transistor Tr1. Thus, the pixel miniaturization can be achieved.

Abstract: In one aspect, the present disclosure relates to a method for removing noise from a digital video sequence containing a modulated light signal emitted from a beacon light source. In some embodiments, the method includes electronically receiving, by an image sensor of a device, a digital video sequence of a scene, calculating noise from the digital video sequence, wherein the noise comprises information within the digital video sequence corresponding to the un-modulated illumination of the scene, reducing the noise from the digital video sequence to obtain an isolated digital video sequence of the modulated illumination of the scene, and demodulating the emitted light signal from the isolated digital video sequence.

Abstract: Provided herein is a PIN diode, a manufacturing method thereof, an x-ray detector using the PIN diode, and a manufacturing method thereof, the PIN diode manufacturing method according to an embodiment of the present disclosure including forming a lower electrode layer, and forming a lower electrode by etching the lower electrode layer; depositing a PIN layer for formation of a PIN structure above the lower electrode, and depositing an upper electrode layer for formation of the upper electrode above the PIN layer; forming a photo resist pattern above the upper electrode layer, and forming the upper electrode by etching the upper electrode layer having the photo resist pattern as a mask; forming the PIN structure by etching the PIN layer; etching an edge area of the upper electrode having the photo resist pattern as a mask; and removing the photo resist pattern.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a directional light sensor. The directional light sensor includes a plurality of photodetectors located on the major surface. The directional light sensor also includes one or more barriers, wherein each barrier is positioned to shade one or more of the photodetectors from light incident upon the integrated circuit from a respective direction. The directional light sensor is operable to determine a direction of light incident upon the integrated circuit by comparing an output signal of at least two of the photodetectors.

Abstract: In one aspect, the present disclosure relates to a method for removing noise from a digital video sequence containing a modulated light signal emitted from a beacon light source. In some embodiments, the method includes electronically receiving, by an image sensor of a device, a digital video sequence of a scene, calculating noise from the digital video sequence, wherein the noise comprises information within the digital video sequence corresponding to the un-modulated illumination of the scene, reducing the noise from the digital video sequence to obtain an isolated digital video sequence of the modulated illumination of the scene, and demodulating the emitted light signal from the isolated digital video sequence.

Abstract: Systems and methods are provided that disclose providing a positioning service for devices based on light received from one or more light sources. This light based positioning service uses light information transmitted by each light source to determine the position of the device. The positioning information can include three dimension position information in a building that can then be used to deliver services and information to a mobile device. The content delivered to a mobile device can include multimedia, text, audio, and/or pictorial information. The positioning information along with other location or positioning information can be used in providing augmented reality or location aware services. The light sources can be independent beacons that broadcast information in visible light at a rate that is undetectable by the human eye. Content can be retrieved from a server over a communications connection.

Abstract: A photoelectric element including a transparent bottom electrode, a photosensitive layer, a first electrode, a second electrode and a transparent top electrode is provided. The photosensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the photosensitive layer. The transparent top electrode is located above the photosensitive layer.

Abstract: The light receiving device of the present invention includes a circuit pattern including first and second light receiving parts and first and second output terminals, each of the first and second light receiving parts having a semiconductor layered part forming a photodiode structure having first and second conductivity type semiconductor layers, and first and second electrodes respectively connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first electrodes of the first and second light receiving parts are connected to each other, the second electrode of the first light receiving part is connected to the first output terminal, the second electrode of the second light receiving part is connected to the second output terminal, and a difference between signals generated in the first and second light receiving parts are output between the first and second output terminals.

Abstract: A photoelectric conversion device includes circuit portions disposed on a substrate, a first electrode electrically connected to one of the circuit portions, an optically transparent second electrode opposing the first electrode, and a photoelectric conversion portion disposed between the first electrode and the second electrode. The photoelectric conversion portion has a multilayer structure including a light absorption layer made of a p-type compound semiconductor film having a chalcopyrite structure, an amorphous oxide semiconductor layer, and a window layer made of an n-type semiconductor film.

Abstract: A backside illuminated image sensor having a photodiode and a first transistor in a sensor region and located in a first substrate, with the first transistor electrically coupled to the photodiode. The image sensor has logic circuits formed in a second substrate. The second substrate is stacked on the first substrate and the logic circuits are coupled to the first transistor through bonding pads, the bonding pads disposed outside of the sensor region.

Abstract: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.

Abstract: An illumination device is disclosed. The illumination device includes a light source a pre-dip material that at least partially encapsulates the light source. The pre-dip material may include one or both of thermally-conductive particles and a cyclo-aliphatic composition. The pre-dip material may further include a resin and a hardener for the resin. Methods of manufacturing an illumination device are also disclosed.

Abstract: Embodiments of an apparatus and methods for forming thick metal interconnect structures for integrated structures are generally described herein. Other embodiments may be described and claimed.

Abstract: A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Abstract: A solid-state imaging device includes photoelectric conversion elements on an imaging surface of a substrate, receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge. Electrodes are interposed between the photoelectric conversion elements and light blocking portions are provided above the electrodes and interposed between the photoelectric conversion elements. The light blocking portions include an electrode light blocking portion formed to cover the corresponding electrode, and a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion. The photoelectric conversion elements are arranged at first pitches on the imaging surface. The electrode light blocking portions and the pixel isolation and light blocking portions are arranged at second and third pitches on the imaging surface.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.

Abstract: A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function ?ms of a source electrode in contact with the oxide semiconductor, the work function ?md of a drain electrode in contact with the oxide semiconductor, and electron affinity ? of the oxide semiconductor satisfy ?ms??<?md. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.

Abstract: A solid state imaging device includes a photoelectric conversion portion in which the shape of potential is provided such that charge is mainly accumulated in a vertical direction.

Abstract: A method of manufacturing a CMOS image sensor is disclosed. A silicon-on-insulator substrate is provided, which includes providing a silicon-on-insulator substrate including a mechanical substrate, an insulator layer substantially overlying the mechanical substrate, and a seed layer substantially overlying the insulator layer. A semiconductor substrate is epitaxially grown substantially overlying the seed layer. The mechanical substrate and at least a portion of the insulator layer are removed. An ultrathin oxide later is formed substantially underlying the semiconductor substrate. A mono layer of metal is formed substantially underlying the ultrathin oxide layer.

Abstract: There is provided a solid-state imaging device in which a plurality of pixels is two-dimensionally arranged in a pixel region. Each of the pixels is formed in an island-shaped semiconductor. In this island-shaped semiconductor, a signal line N+ region and a P region are formed from the bottom. On an upper side surface of this P region, an N region and a P+ region are formed from an inner side of the island-shaped semiconductor. Above the P region, a P+ region is formed. By setting the P+ region and the P+ region to have a low-level voltage and setting the signal line N+ region to have a high-level voltage that is higher than the low-level voltage, signal charges accumulated in the N region are discharged to the signal line N+ region via the P region.

Abstract: Methods and devices that incorporate microlens arrays are disclosed. An image sensor includes a pixel layer and a dielectric layer. The pixel layer has a photodetector portion configured to convert light absorbed by the pixel layer into an electrical signal. The dielectric layer is formed on a surface of the pixel layer. The dielectric layer has a refractive index that varies along a length of the dielectric layer. A method for fabricating an image sensor includes forming an array of microlenses on a surface of the dielectric layer, emitting ions through the array of microlenses to implant the ions in the dielectric layer, and removing the array of microlenses from the surface of the dielectric layer.

Abstract: An image sensor comprising at least: CMOS-type photodiodes and transistors produced in a semiconductor layer having a thickness of between approximately 1 ?m and 1.5 ?m, a dielectric layer in which electrical interconnect layers are made, which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors, said dielectric layer being arranged against a first face of the semiconductor layer opposite a second face of the semiconductor layer through which the light received by the sensor from the exterior is intended to enter, light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor towards the photodiodes.

Abstract: An active sensor apparatus includes an array of sensor elements arranged in a plurality of columns and rows of sensor elements. The sensor apparatus includes a plurality of column and row thin film transistor switches for selectively activating the sensor elements, and a plurality of column and row thin film diodes for selectively accessing the sensor elements to obtain information from the sensor elements. The thin film transistor switches and thin film diodes are formed on a common substrate.

Abstract: A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.

Abstract: Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type wel

Abstract: An image sensor includes a transfer transistor including a vertical gate portion extending in a depth direction of a substrate in an active region of the substrate and photodiode regions located at positions of different depths with respect to a top surface of the substrate in the active region. At least one color adjustment path extends between at least two photodiode regions of the photodiode regions and provides a charge movement path between the at least two photodiode regions.

Abstract: There is provided a photoelectric conversion apparatus which is characterized by comprising a plurality of photoelectric conversion regions of a first conductivity type, and a plurality of semiconductor regions of a second conductivity type opposite to the first conductivity type; and in that the plurality of photoelectric conversion regions of the first conductivity type and the plurality of semiconductor regions are alternately arranged, and a voltage controlling unit is further provided to change a width of a depletion layer formed in a semiconductor substrate by controlling a voltage to be applied to the semiconductor region of the second conductivity type provided between the plurality of photoelectric conversion regions of the first conductivity type.

Abstract: The present invention discloses an image sensor including photodiodes formed in a semiconductor substrate, a color filter array formed over the photodiodes, and microlenses formed on the color filter array. A first microlens, which may be any one of two adjacent microlenses, includes an upper portion and a lower portion. The lower portion of the first microlens is formed of a material different than a material of the upper portion of the first microlens.

Abstract: A device includes a semiconductor substrate having a front side and a backside. An active image sensor pixel array is disposed on the front side of the semiconductor substrate. A metal shield is disposed on the backside of, and overlying, the semiconductor substrate. The metal shield has an edge facing the active image sensor pixel array. The metal shield has a middle width, and a top width greater than the middle width.

Abstract: A solid-state imaging device including: a substrate; a light-receiving part; a second-conductivity-type isolation layer; a detection transistor; and a reset transistor.

Abstract: In accordance with the invention, an improved image sensor includes an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits.

Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

Abstract: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.

Abstract: Provided is a semiconductor device having an ESD protection MOS transistor including a plurality of transistors combined together, in which a plurality of drain regions and a plurality of source regions disposed alternately and a gate electrode disposed between each pair of adjacent regions constituted of one of the plurality of drain regions and one of the plurality of source regions, in which a distance between a salicide metal region, which is formed on each of the plurality of drain regions, and the gate electrode is determined according to contact holes in the plurality of drain regions and a distance of the contact holes from substrate contacts.

Abstract: In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

Abstract: A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

Abstract: According to one embodiment, a solid-state imaging device includes an imaging region including unit pixels which are two-dimensionally arranged on a semiconductor layer and each of which includes a photoelectric conversion unit and a signal scanning circuit unit. The unit pixel includes a transfer gate provided on the semiconductor layer, a photogate provided on the semiconductor layer, a first semiconductor layer of a first conductivity type, which is provided in the semiconductor layer below the photogate, and a second semiconductor layer of the first conductivity type, which is adjacent to the first semiconductor layer and provided in the semiconductor layer between the transfer gate and the photogate.

Abstract: The present approach involves a radiation detector module with increased quantum efficiency and methods of fabricating the radiation detector module. The module includes a scintillator substrate and a photodetector fabricated on the scintillator substrate. The photodetector includes an anode, active organic elements, and a cathode. The module also includes a pixel element array disposed over the photodetector. During imaging, radiation attenuated by an object to be imaged may propagate through the pixel element array and through the layers of the photodetector to be absorbed by the scintillator which in response emits optical photons. The photodetector may absorb the photons and generate charge with improved quantum efficiency, as the photons may not be obscured by the cathode or other layers of the module. Further, the module may include reflective materials in the cathode and at the pixel element array to direct optical photons towards the active organic elements.

Abstract: The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array or a light guide and concentrating optical systems or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

Abstract: To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, the image sensor includes a thin film transistor is in a pixel of a plurality of pixels, an insulating layer is over the thin film transistor, a plurality of first electrodes, which is a shielding layer, is over the insulating layer, a photoelectric conversion layer including a semiconductor film is over the plurality of the first electrodes, and a second electrode over the photoelectric conversion layer. The thin film transistor can include polycrystal silicon. The semiconductor film can include amorphous silicon.

Abstract: In a photodetector 1, a low-resistance Si substrate 3, an insulating layer 4, a high-resistance Si substrate 5, and an Si photodiode 20 construct a hermetically sealed package for an InGaAs photodiode 30 placed within a recess 6, while an electric passage part 8 of the low-resistance Si substrate 3 and a wiring film 15 achieve electric wiring for the Si photodiode 20 and InGaAs photodiode 30. While a p-type region 22 of the Si photodiode 20 is disposed in a part on the rear face 21b side of an Si substrate 21, a p-type region 32 of the InGaAs photodiode 30 is disposed in a part on the front face 31a side of an InGaAs substrate 31.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: A photovoltaic cell is provided as a composite unit together with elements of an integrated circuit on a common substrate. In a described embodiment, connections are established between a multiple photovoltaic cell portion and a circuitry portion of an integrated structure to enable self-powering of the circuitry portion by the multiple photovoltaic cell portion.