Particular Electrode Material Patents (Class 257/32)
  • Patent number: 5232903
    Abstract: A superconducting device has an oxide superconducting material with a passivation or blocking film formed on its surface. The film helps to maintain a uniform oxygen concentration of the superconducting material through its thickness. The superconducting material is thus superconductive throughout its cross-section, and particularly in the vicinity of the surface bearing the film.
    Type: Grant
    Filed: March 13, 1991
    Date of Patent: August 3, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5198413
    Abstract: An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.
    Type: Grant
    Filed: November 13, 1991
    Date of Patent: March 30, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Yoshinobu Tarutani, Ushio Kawabe