Abstract: A cantilever beam structure where stress is matched and a method of manufacturing the same are provided. An example method may comprise depositing a first sub-layer of a first material with a first deposition menu and depositing a second sub-layer of the first material with a second deposition menu different from the first deposition menu. The first sub-layer and the second sub-layer can be disposed adjacent to each other to form a first layer. The method may further comprise depositing a second layer of a second material different from the first material. The first layer and the second layer can be disposed adjacent to each other. The method may further comprise matching stress between the first layer and the second layer by adjusting at least one of thicknesses of the respective sub-layers of the first layer and a thickness of the second layer.

Abstract: One or more stopper features (e.g., bump structures) are formed in a standard ASIC wafer top passivation layer for preventing MEMS device stiction vertically in integrated devices having a MEMS device capped directly by an ASIC wafer. A TiN coating may be used on the stopper feature(s) for anti-stiction. An electrical potential may be applied to the TiN anti-stiction coating of one or more stopper features.

Abstract: The micro-electromechanical device has a substrate. Integrated into the substrate is a micromechanical component that has a bending element which can be bent reversibly and which has a first end connected to the substrate and extends from the first end over a free space. The bending element has at least one web having two side edges, the course of which is defined by depressions introduced into the bending element and adjacent to the side edges. In order to form a homogenization region located within the web, in which mechanical stresses occurring during bending of the bending element are substantially equal, the mutual spacing of the side edges of the web decreases, as viewed from the first end of the bending element. The device further comprises at least one microelectronic component that is sensitive to mechanical stresses and embedded in the web in the homogenization region of the latter.

Abstract: Provided is a structure for improving performance of a micro electro mechanical system (MEMS) microphone by preventing deformation from occurring due to a residual stress and a package stress of a membrane and by decreasing membrane rigidity. A MEMS microphone according to the present disclosure includes a backplate formed on a substrate; an insulating layer formed on the substrate to surround the backplate; a membrane formed to be separate from above the backplate by a predetermined interval; a membrane supporting portion configured to connect the membrane to the substrate; and a buffering portion formed in a double spring structure between the membrane and the membrane supporting portion.

Abstract: The invention relates to an MEMS structure with a stack made of different layers and a spring-and-mass system varying in its thickness which is formed of the stack, and wherein, starting from a back side of the stack and the substrate, at laterally different positions, the substrate while leaving the first semiconductor layer, or the substrate, the first etch-stop layer and the first semiconductor layer are removed, and to a method for manufacturing such a structure.

Abstract: Dummy Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a bumper extending from a Micro-Electro-Mechanical System (MEMS) beam structure provided within a cavity structure. The method further includes forming a dummy landing structure on an opposing side of the cavity structure from the MEMS beam, which is laterally offset from the bumper when the MEMS beam is in a non-actuated state.

Abstract: A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter.

Abstract: Pressure sensors that may be used in harsh or corrosive environments. One example may provide a pressure sensor having membrane with a top surface that may be free of components or electrical connections. Instead, components and electrical connections may be located under the membrane. By providing a top surface free of components and electrical connections, the top surface of the pressure sensor may be placed in harsh or corrosive environments, while components and electrical connections under the membrane may remain protected.

Abstract: Hybrid integrated components including an MEMS element and an ASIC element are described, whose capacitor system allows both signal detection with comparatively high sensitivity and sensitive activation of the micromechanical structure of the MEMS element. The hybrid integrated component includes an MEMS element having a micromechanical structure which extends over the entire thickness of the MEMS substrate. At least one structural element of this micromechanical structure is deflectable and is operationally linked to at least one capacitor system, which includes at least one movable electrode and at least one stationary electrode. Furthermore, the component includes an ASIC element having at least one electrode of the capacitor system. The MEMS element is mounted on the ASIC element, so that there is a gap between the micromechanical structure and the surface of the ASIC element.

Abstract: The present invention provides a CMOS compatible silicon differential condenser microphone and a method of manufacturing the same.

Abstract: An embodiment relates to a device integrated on a semiconductor substrate of a type comprising at least one first portion for the integration of at least one microfluidic system, and a second portion for the integration of an additional circuitry. The microfluidic system comprises at least one cavity realized in a containment layer of the integrated device closed on top by at least one portion of a polysilicon layer, this polysilicon layer being a thin layer shared by the additional circuitry and the closing portion of the cavity realizing a piezoresistive membrane for the microfluidic system.

Abstract: A capacitive pressure sensing semiconductor device is provided, which has pressure resistance against pressure applied by a pressing member and can detect the pressure surely and efficiently. The pressure sensing semiconductor device includes a pressure detecting part, which detects pressure as a change in capacitance, and a package that receives the pressure detecting part within. The pressure detecting part includes a first electrode and a second electrode disposed to oppose the first electrode, with a determined distance therebetween. Capacitance is formed between the first electrode and the second electrode, and changes according to a change in said distance caused by pressure transmitted to the first electrode by a pressing member. The package also includes a pressure transmitting member that transmits, to the first electrode of the pressure detecting part, the pressure applied by the pressing member.

Abstract: A sensor element includes: a first substrate in which a diaphragm is configured on a main surface; a second substrate which is provided on the side opposite to the diaphragm of the first substrate; a cavity which is provided just below the diaphragm of the first substrate; a bonding position which is provided at a bonding position between the first substrate and the second substrate for airtight sealing of the cavity; and a bump portion which is provided at the fitting portion, and protects a fitted state between the first substrate and the second substrate.

Abstract: A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.

Abstract: An electromechanical transducer includes multiple elements each having multiple cells, with each cell including a first electrode formed from a conductive substrate, and a second electrode opposed to a first face of the conductive substrate and across a gap. The multiple cells of each of the elements are electrically connected, and the conductive substrate is divided for each of the elements by grooves extending from the first face to a second face which is opposite from the first face. In addition, insulating films are formed on opposing side walls of the conductive substrate and define each of the grooves, wherein a gap width of each of the grooves is narrower on the second face side of the conductive substrate than on the first face side of the conductive substrate.

Abstract: A semiconductor chip includes a semiconductor chip body having a first surface and a second surface that faces away from the first surface, and including a plurality of bonding pads disposed on the first surface. Also, the semiconductor chip includes a distance maintaining member attached to the first surface of the semiconductor chip body and electrically connected with a circuit pattern.

Abstract: Provided is a technique for packaging a sensor structure having a contact sensing surface and a signal processing LSI that processes a sensor signal. The sensor structure has the contact sensing surface and sensor electrodes. The signal processing integrated circuit is embedded in a semiconductor substrate. The sensor structure and the semiconductor substrate are bonded by a bonding layer, forming a sensor device as a single chip. The sensor electrodes and the integrated circuit are sealed inside the sensor device, and the sensor electrodes and external terminals of the integrated circuit are led out to the back surface of the semiconductor substrate through a side surface of the semiconductor substrate.

Abstract: In a MEMS structure, a first trench which penetrates the first layer, the second layer and the third layer is formed, and a second trench which penetrates the fifth layer, the forth layer and the third layer is formed. The first trench forms a first part of an outline of the movable portion in a view along the stacked direction. The second trench forms a second part of the outline of the movable portion in the view along the stacked direction. At least a part of the first trench overlaps with the first extending portion in the view along the stacked direction.

Abstract: A MEMS device formed by a body; a cavity, extending above the body; mobile and fixed structures extending above the cavity and physically connected to the body via anchoring regions; and electrical-connection regions, extending between the body and the anchoring regions and electrically connected to the mobile and fixed structures. The electrical-connection regions are formed by a conductive multilayer including a first semiconductor material layer, a composite layer of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer.

Abstract: A MEMS may integrate movable MEMS parts, such as mechanical elements, flexible membranes, and sensors, with the low-cost device package, leaving the electronics and signal-processing parts in the integrated circuitry of the semiconductor chip. The package may be a leadframe-based plastic molded body having an opening through the thickness of the body. The movable part may be anchored in the body and extend at least partially across the opening. The chip may be flip-assembled to the leads to span across the foil, and may be separated from the foil by a gap. The leadframe may be a prefabricated piece part, or may be fabricated in a process flow with metal deposition on a sacrificial carrier and patterning of the metal layer. The resulting leadframe may be flat or may have an offset structure useful for stacked package-on-package devices.

Abstract: Measures are proposed by which the design freedom is significantly increased in the case of the implementation of the micromechanical structure of the MEMS element of a component, which includes a carrier for the MEMS element and a cap for the micromechanical structure of the MEMS element, the MEMS element being mounted on the carrier via a standoff structure. The MEMS element is implemented in a layered structure, and the micromechanical structure of the MEMS element extends over at least two functional layers of this layered structure, which are separated from one another by at least one intermediate layer.

Abstract: In one embodiment, a method of opening a passageway to a cavity includes providing a donor portion, forming a heating element adjacent to the donor portion, forming a first sacrificial slab abutting the donor portion, wherein the donor portion and the sacrificial slab are a shrinkable pair, forming a first cavity, a portion of the first cavity bounded by the first sacrificial slab, generating heat with the heating element, forming a first reduced volume slab from the first sacrificial slab using the generated heat and the donor portion, and forming a passageway to the first cavity by forming the first reduced volume slab.

Abstract: The present invention discloses a MEMS sensing device which comprises a substrate, a MEMS device region, a film, an adhesive layer, a cover, at least one opening, and a plurality of leads. The substrate has a first surface and a second surface opposite the first surface. The MEMS device region is on the first surface, and includes a chamber. The film is overlaid on the MEMS device region to seal the chamber as a sealed space. The cover is mounted on the MEMS device region and adhered by the adhesive layer. The opening is on the cover or the adhesive layer, allowing the pressure of the air outside the device to pressure the film. The leads are electrically connected to the MEMS device region, and extend to the second surface.

Abstract: An electronic device includes: a first-member that includes a through-hole; a second-member that includes a connection-hole and that is in contact with the first-member in a state where the through-hole and the connection-hole are in communication with each other; a first-locking-surface that is formed on the first-member while extending radially outside of the through-hole and that faces a side opposite to the connection-hole-side; a second-locking-surface that is formed in the second-member while extending radially outside of the connection-hole and that faces a side opposite to the through-hole-side; and an adhesive-portion including a shaft-portion with which the through-hole and the connection-hole are filled, a first-large-diameter portion that is formed at an end of the shaft-portion and secured to the first-locking-surface, and a second-large-diameter portion that is formed at the other end of the shaft-portion and secured to the second-locking-surface.

Abstract: A hybrid integrated component including an MEMS element and an ASIC element is refined to improve the capacitive signal detection or activation. The MEMS element is implemented in a layered structure on a semiconductor substrate. The layered structure of the MEMS element includes at least one printed conductor level and at least one functional layer, in which the micromechanical structure of the MEMS element having at least one deflectable structural element is implemented. The ASIC element is mounted face down on the layered structure and functions as a cap for the micromechanical structure. The deflectable structural element of the MEMS element is equipped with at least one electrode of a capacitor system. At least one stationary counter electrode of the capacitor system is implemented in the printed conductor level of the MEMS element, and the ASIC element includes at least one further counter electrode of the capacitor system.

Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

Abstract: Provided are a contact-force sensor package and a method of fabricating the same. The contact-force sensor package includes an elastic layer comprising a side that contacts a source of a contact-force; and a substrate layer adhered to the opposing side of the elastic layer from the side that contacts the source of the contact-force and comprising a cantilever beam separated from the elastic layer and deformed due to the contact-force, a pillar extending from a free end portion of the cantilever beam to the elastic layer and transferring the contact-force from the elastic layer to the cantilever beam, and a deformation sensing element for generating an electrical signal that is proportional to a degree of deformation of the cantilever beam.

Abstract: A device includes a semiconductor substrate, and a capacitive sensor having a back-plate, wherein the back-plate forms a first capacitor plate of the capacitive sensor. The back-plate is a portion of the semiconductor substrate. A conductive membrane is spaced apart from the semiconductor substrate by an air-gap. A capacitance of the capacitive sensor is configured to change in response to a movement of the polysilicon membrane.

Abstract: The present invention provides a MEMS structure comprising confined sacrificial oxide layer and a bonded Si layer. Polysilicon stack is used to fill aligned oxide openings and MEMS vias on the sacrificial layer and the bonded Si layer respectively. To increase the design flexibility, some conductive polysilicon layer can be further deployed underneath the bonded Si layer to form the functional sensing electrodes or wiring interconnects. The MEMS structure can be further bonded to a metallic layer on top of the Si layer and the polysilicon stack.

Abstract: A component has at least one MEMS element and at least one cap made of a semiconductor material. The cap, in addition to its mechanical function as a terminus of a cavity and protection of the micromechanical structure, is provided with an electrical functionality. The micromechanical structure of the MEMS element of the component is situated in a cavity between a carrier and the cap, and includes at least one structural element which is deflectable out of the component plane within the cavity. The cap includes at least one section extending over the entire thickness of the cap, which is electrically insulated from the adjoining semiconductor material in such a way that it may be electrically contacted independently from the remaining sections of the cap.

Abstract: A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided. Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.

Abstract: A sensor device includes a first electrode disposed on active surface side of a silicon substrate, an external connecting terminal electrically connected to the first electrode, at least one stress relaxation layer disposed between the silicon substrate and the external connecting terminal, a connecting terminal disposed on the active surface side of the silicon substrate, and a vibration gyro element having weight sections as mass adjustment sections, the vibration gyro element is held by the silicon substrate due to connection between the connection electrode and the external connecting terminal, and a meltage protection layer formed in an area where the stress relaxation layer and the mass adjustment section overlap each other in a plan view is provided.

Abstract: A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate 101, an insulation layer 102 formed selectively on the substrate 101 as a sacrificial surface, a beam 103 formed on the substrate 101 via a space, a first support portion 104A formed on the insulation layer 102 of the same material as that of the beam 103, and electrodes formed with a space defined between the beam 103 and themselves for signals to be inputted thereinto and outputted therefrom. A sectional area of the beam 103 and a sectional area of the first support portion 104A are substantially equal in a section which is perpendicular to a longitudinal direction of the beam 103.

Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

Abstract: A wafer-level-based packaging concept for MEMS components having at least one diaphragm structure formed in the component front side is described, according to which an interposer is connected to the front side of the MEMS component, which has at least one passage aperture as an access opening to the diaphragm structure of the MEMS component and which is provided with electrical through contacts so that the MEMS component is electrically contactable via the interposer. The cross-sectional area of the at least one passage aperture in the interposer is to be designed as significantly smaller than the lateral extension of the diaphragm structure of the MEMS component. The at least one passage aperture opens into a cavity between the diaphragm structure and the interposer.

Abstract: A fully embedded micromechanical device and a system on chip is manufactured on an SOI-substrate. The micromechanical device comprises a moveable component having a laterally extending upper and lower surface and vertical side surfaces. The upper surface is adjacent to an upper gap which laterally extends over at least a part of the upper surface and results from the removal of a shallow trench insulation material. The lower surface is adjacent to a lower gap which laterally extends over at least a part of the lower surface and results from the removal of the buried silicon oxide layer. The side surfaces of the movable component are adjacent to side gaps which surround at least a part of the vertical side surfaces of the moveable component and result from the removal of a deep trench insulation material.

Abstract: The present invention discloses an MEMS sensor and a method for making the MEMS sensor. The MEMS sensor according to the present invention includes: a substrate including an opening; a suspended structure located above the opening; and an upper structure, a portion of which is at least partially separated from a portion of the suspended structure; wherein the suspended structure and the upper structure are separated from each other by a step including metal etch.

Abstract: A sensor device and a method of forming comprises a die pad receives a sensor device, such as a MEMS device. The MEMS device has a first coefficient of thermal expansion (CTE). The die pad is made of a material having a second CTE compliant with the first CTE. The die pad includes a base and a support structure with a CTE compliant with the first and second CTE. The die pad has a support structure that protrudes from a base. The support structure has a height and wall thickness which minimize forces felt by the die pad and MEMS device when the base undergoes thermal expansion or contraction forces from a header.

Abstract: A micro-electrical-mechanical device comprises: a transducer arrangement having at least a membrane being mounted with respect to a substrate; and electrical interface means for relating electrical signals to movement of the membrane; in which the transducer arrangement comprises stress alleviating formations which at least partially decouple the membrane from expansion or contraction of the substrate.

Abstract: In a mechanical quantity measuring device (1) having a sensor chip (2) which outputs a sense output (S) corresponding to a mechanical quantity acting on the object to be measured (4), and a flexible wiring board (3) which supports the sensor chip (2) and has a wire (6) to lead out the sense output (S) to outside, and in which in measuring the mechanical quantity, the sensor chip (2) and the flexible wiring board (3) are attached to the object to be measured (4), a cutout (5) is provided on the flexible wiring board (3) near the sensor chip (2) and on the side where the wire (6) is arranged for the sensor chip (2). Thus, change in the sense output (S) with time can be restrained.

Abstract: The electronic device package includes a package substrate including a frame portion and a cantilever portion surrounded by the frame portion, at least one semiconductor chip mounted on the cantilever portion, and a molding member disposed on the package substrate to cover the at least one semiconductor chip. The cantilever portion has a first edge connected to the frame portion and declines from the first edge toward a second edge located opposite to the first edge. Related methods are also provided.

Abstract: A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer.

Abstract: Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.

Abstract: A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract: A condenser microphone having a flexure hinge diaphragm and a method of manufacturing the same are provided. The method includes the steps of: forming a lower silicon layer and a first insulating layer; forming an upper silicon layer on the first insulating layer; forming sound holes by patterning the upper silicon layer; forming a second insulating layer and a conductive layer on the upper silicon layer; forming a passivation layer on the conductive layer; forming a sacrificial layer on the passivation layer; depositing a diaphragm on the sacrificial layer, and forming air holes passing through the diaphragm; forming electrode pads on the passivation layer and a region of the diaphragm; and etching the layers to form an air gap between the diaphragm and the upper silicon layer. Consequently, a manufacturing process may improve the sensitivity and reduce the size of the condenser microphone.

Abstract: A hybrid integrated component including an MEMS element and an ASIC element is refined to improve the capacitive signal detection or activation. The MEMS element is implemented in a layered structure on a semiconductor substrate. The layered structure of the MEMS element includes at least one printed conductor level and at least one functional layer, in which the micromechanical structure of the MEMS element having at least one deflectable structural element is implemented. The ASIC element is mounted face down on the layered structure and functions as a cap for the micromechanical structure. The deflectable structural element of the MEMS element is equipped with at least one electrode of a capacitor system. At least one stationary counter electrode of the capacitor system is implemented in the printed conductor level of the MEMS element, and the ASIC element includes at least one further counter electrode of the capacitor system.

Abstract: A sensor for acoustic applications such as a silicone microphone is provided containing a backplate provided with apertures and a flexible diaphragm formed from a silicon on insulator (SOI) wafer which includes a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer that is connected to, and insulated from the backplate. The arrangement of the diaphragm in relation to the rest of the sensor and the sensor location, being mounted over the aperture in a PCB, reduces the acoustic signal pathway which allows the sensor to be both thinner and more importantly, enables there to be a greater back volume.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

Abstract: One example includes an integrated circuit including at least one electrical interconnects disposed on an elongate are extending away from a main portion of the integrated circuit and a microelectromechanical layer including an oscillating portion, the microelectromechanical layer coupled to the main portion of the integrated circuit, wherein the microelectromechanical layer includes a cap comprising a membrane that extends to the integrated circuit.