Abstract: A device structure is made using a first conductive layer over a first wafer. An isolated conductive region is formed in the first conductive layer surrounded by a first opening in the conductive layer. A second wafer has a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer. The insulating layer is attached to the isolated conductive region. The conductive substrate is thinned to form a second conductive layer. A second opening is formed through the second conductive layer and the first insulating layer to the isolated conductive region. The second opening is filled with a conductive plug wherein the conductive plug contacts the isolated conductive region. The second conductive region is etched to form a movable finger over the isolated conductive region. A portion of the insulating layer under the movable finger is removed.

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a plurality of discrete wires on a substrate. The method further includes forming a sacrificial cavity layer on the discrete wires. The method further includes forming trenches in an upper surface of the sacrificial cavity layer. The method further includes filling the trenches with dielectric material. The method further includes depositing metal on the sacrificial cavity layer and on the dielectric material to form a beam with at least one dielectric bumper extending from a bottom surface thereof.

Abstract: A micro structure includes a base member; a supporting unit disposed on a surface of the base member; a graphene unit which covers at least a portion of the supporting unit and at least a portion of an empty space adjacent to the supporting unit; and a structure unit disposed on at least a portion of the graphene unit over the supporting unit.

Abstract: A microelectromechanical system package includes a chip carrier, a first microelectromechanical system chip, a silicon cover, a layer of metal, a plurality of first bonding wires and a sealant. The first microelectromechanical system chip is positioned on the chip carrier and has an active surface, and an active area on the active surface. The layer of metal is formed on the upper surface of the cover. The first bonding wires electrically connect the active surface of the first microelectromechanical system chip to the chip carrier. The sealant is formed on the chip carrier to encapsulate the first microelectromechanical system chip and the first bonding wires.

Abstract: A solid-state image pickup apparatus includes a substrate, a solid-state image pickup device, and a Micro Electro Mechanical Systems (MEMS) device. The solid-state image pickup device and the MEMS device are configured to be formed on the same substrate.

Abstract: Nanotube and graphene transducers are disclosed. A transducer according to the present invention can include a substrate, a plurality of semiconductive structures, one or more metal pads, and a circuit. The semiconductive structures can be nanotubes or graphene located entirely on a surface of the substrate, such that each of the semiconductive structures is supported along its entire length by the substrate. An electrical property of the semiconductive structures can change when a force is applied to the substrate. The metal pads can secure at least one of the semiconductive structures to the substrate. The circuit can be coupled to at least some of the semiconductive structures to provide an output responsive to the change in the electrical property of the semiconductive structures, so as to indicate the applied force.

Abstract: Anchor systems and methods anchor components of a Micro-Electro-Mechanical Systems (MEMS) device to a substrate. An exemplary embodiment has a trace anchor bonded to a substrate, a device anchor bonded to the substrate, and an anchor flexure configured flexibly couple the trace anchor and the device anchor to substantially prevent transmission of a stress induced in the trace anchor from being transmitted to the device anchor.

Abstract: Provided are a Micro Electro-Mechanical System (MEMS) package and a method of packaging the MEMS package. The MEMS package includes: a MEMS device including MEMS structures formed on a substrate, first pad electrodes driving the MEMS structures, first sealing parts formed at an edge of the substrate, and connectors formed on the first pad electrodes and the first sealing parts; and a MEMS driving electronic device including second pad electrodes and second sealing parts respectively corresponding to the first pad electrodes and the first sealing parts to be sealed with and bonded to the MEMS device through the connectors to form an air gap having a predetermined width.

Abstract: A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

Abstract: The invention relates to a detection device using at least one transistor (2) with a vertical channel, comprising a mechanical structure (14), free to move relative to the transistor, in a plane containing the transistor drain (10), source (8) and channel (12).

Abstract: A manufacturing method of an electronic device package includes: forming concave portions that later form the cavities in one surface of a cover substrate; forming a first metal film on the cover substrate on a surface opposite to the surface in which the concave portions are formed; forming a second metal film on the cover substrate on the surface in which the concave portions are formed; bonding a base substrate and the cover substrate together via the second metal film. It thus becomes possible to provide an electronic device package in which the base substrate and the cover substrate are boned together via the metal film in a stable manner by minimizing warping of the substrate even when the substrate is made thinner.

Abstract: A production method with release of movable mechanical parts of an electro-mechanical microsystem is disclosed. The method is characterized in that porous zones are formed on the front face of a first water of a semiconductor material. Patterns of a material able to constitute the movable mechanical parts of the electro-mechanical microsystem are then formed on the front face of the first water at the level of the porous zones and encapsulated in a sacrificial layer. Then a layer of a material withstanding an attack by a solvent of the sacrificial layer is deposited. The release of the movable mechanical parts is then executed by the rear face of the first water, through the porous zones, using a solvent of the sacrificial layer.

Abstract: The MEMS package comprises a first and a second pre-molded lead-frame substrate, at least one of them having a cavity formed by plastic sidewalls along its periphery. The first and second pre-molded lead-frame substrates are interconnected with metal leads. At least one MEMS device is attached to one of the substrates. The first pre-molded lead-frame substrate is folded over and joined to the second pre-molded lead-frame substrate to house the at least one MEMS device. In one embodiment, the first pre-molded lead-frame substrate has metal leads extending outside of sidewalls of the cavities. The extended metal leads are folded over the top of the second pre-molded lead-frame substrate to form surface mounting pads. In some embodiments, extended metal leads are folded along the sidewalls and connected to ground for electromagnetic interference (EMI) shielding.

Abstract: An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure.

Abstract: A micromachine includes a microstructure and a semiconductor element formed over one insulating substrate. The micromachine includes including a movable layer containing polycrystalline silicon and a space below or above the layer. Such polycrystalline silicon is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device may include a microstructure and a semiconductor element provided over one insulating substrate.

Abstract: A method for the production of a planar structure is disclosed. The method comprises producing on a substrate a plurality of structures of substantially equal height, and there being a space in between the plurality of structures. The method further comprises providing a fill layer of electromagnetic radiation curable material substantially filling the space between the structures. The method further comprises illuminating a portion of the fill layer with electromagnetic radiation, hereby producing a exposed portion and an unexposed portion, the portions being separated by an interface substantially parallel with the first main surface of the substrate. The method further comprises removing the portion above the interface.

Abstract: A micromechanical device according to an aspect of the present invention includes, a substrate, a micromachine which is mounted on the substrate, is provided with a mechanism deformed by a function of an electric field, and changes the electrical characteristics concomitantly with the deformation, an inner inorganic sealing film which contains an inorganic material, is provided on a principal surface of the substrate, covers the micromachine through a hollow section containing a gaseous body therein, and is provided with opening shape sections allowing the hollow section to communicate with the outside, an organic sealing film which contains an organic material, is formed on the inner inorganic sealing film, and blocks up the opening shape sections, and an outer inorganic sealing film which contains an inorganic material with lower moisture permeability than the organic material, is formed on the organic sealing film, and covers the organic sealing film.

Abstract: A micromechanical structure, includes at least two structure sections configured to bound a working gap, the at least two structure sections being movable relative to one another, and a working gap width setting device configured to broaden the at least one working gap by movement of a first structure section of the at least two structure sections relative to a second structure section of the at least two structure section, the first structure section is stationary relative to a reference point during operation of the micromechanical structure and (ii) the second structure section is movable relative to the reference point during operation.

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract: A package structure having at least an MEMS element is provided, including a chip having electrical connecting pads and the MEMS element; a lid disposed on the chip to cover the MEMS element and having a metal layer provided thereon; first sub-bonding wires electrically connecting to the electrical connecting pads; second sub-bonding wires electrically connecting to the metal layer; an encapsulant disposed on the chip, wherein the top ends of the first and second sub-bonding wires are exposed from the encapsulant; and metallic traces disposed on the encapsulant and electrically connecting to the first sub-bonding wires. The package structure advantageously features reduced size, relatively low costs, diverse bump locations, and an enhanced EMI shielding effect.

Abstract: The present invention discloses a micrometer-scale grid structure based on single crystal silicon consists of periphery frame 1 and grid zone 2. The periphery frame 1 is rectangle, and grid zone 2 has a plurality of mesh-holes 3 distributing in the plane of grid zone 2. The present invention also provides a method for manufacturing a micrometer-scale grid structure based on single crystal silicon. According to the present invention thereof, the contradiction between demand of broad deformation space for sensor and actuator and the limit of the thickness of sacrifice layer is solved. Furthermore, the special requirement of double-side transparence for some optical sensor is met.

Abstract: The invention relates to a capacitive sensor device 100. The capacitive sensor device (100) comprises a substrate (401), a first electrode (101) coupled to the substrate (401, a second electrode (102) coupled to the substrate (401) and a movable element (103). The movable element (103) is capacitively coupled to the first electrode (101), the moveable element (103) and the first electrode (101) representing a first capacitor (104). The movable element (103) is capacitively coupled to the second electrode (102), the moveable element (103) and the second electrode (102) representing a second capacitor (105). The movable element (103) is movable between the first electrode (101) and the second electrode (102) in such a manner, that an electrical impedance between the first electrode (101) and the second electrode (102) is changeable due to a change of a position of the movable element (103). The movable element (103) is decoupled from the substrate (401), in particular to a signal line.

Abstract: A microminiature moving device has disposed on a single-crystal silicon substrate movable elements such as a movable rod and a movable comb electrode that are displaceable in parallel to the substrate surface and stationary parts that are fixedly secured to the single -crystal silicon substrate with an insulating layer sandwiched between. Depressions are formed in the surface regions of the single-crystal silicon substrate where no stationary parts are present and the movable parts are positioned above the depressions. The depressions form gaps large enough to prevent foreign bodies from causing shorts and malfunctioning of the movable parts.

Abstract: Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.

Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.

Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.

Abstract: In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a lateral surface of the anchor, and which points at an inclination away from the anchor.

Abstract: An integrated circuit having a semiconductor sensor device including a sensor housing partly filled with a rubber-elastic composition is disclosed. One embodiment has a sensor chip with sensor region arranged in the interior of the housing. The sensor housing has an opening to the surroundings which is arranged in such a way that the sensor region faces the opening. The sensor chip is embedded into a rubber-elastic composition on all sides in the interior of the housing. The sensor housing has a sandwich-like framework having three regions arranged one above another, including an intermediate region with the rubber-elastic composition.

Abstract: A pattern arrangement method including using a stepper to arrange a plurality of chip patterns arranged parallel to a first direction and a second direction on a silicon wafer using a reticule which includes a plurality of patterns expanded in the first direction and the second direction which intersects the first direction and arranged linearly and intermittently, wherein the stepper adjusts the position of the reticule and the silicon wafer which faces the reticule so that an axis in which a cleavage plane of the silicon wafer and a surface arranged with the pattern on the silicon wafer intersect, and the first direction are different.

Abstract: In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.

Abstract: An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front surface, a second groove portion being formed along a rear surface pattern, in the main rear surface, a through-hole being formed because of connection between at least parts of the first groove portion and the second groove portion and at least one groove width variation portion being formed in at least one of inner walls of the first groove portion. An offset of the rear surface pattern to the front surface pattern can be inspected easily by existence of the groove width variation portion.

Abstract: A resonator comprising a beam formed from a first material having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and a second material having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient at least within operating conditions of the resonator, wherein the ratio of the cross sectional area of the first material to the cross sectional area of the second material varies along the length of the beam, the cross sectional areas being measured substantially perpendicularly to the beam.

Abstract: A physical quantity sensor includes: the fixed arm section includes a first side surface insulating film disposed on a side surface of the laminate structure, a first side surface conductor film disposed on a surface of the first side surface insulating film, and a first connection electrode section provided to the upper insulating layer, and electrically connected to the first side surface conductor film, the movable arm section includes a second side surface insulating film disposed on a side surface of the laminate structure, a second side surface conductor film disposed on a surface of the second side surface insulating film, and a second connection electrode section provided to the upper insulating layer, and electrically connected to the second side surface conductor film, and the first side surface conductor film and the second side surface conductor film are disposed so as to be opposed to each other.

Abstract: An MEMS sensor constructed on a base chip and having a capacitive mode of operation is disclosed. The MEMS sensor has a patterned layer construction applied on the base chip. A cutout is produced in the layer construction, the moveable electrode, for example a membrane, being arranged in said cutout. The cutout is spanned by a covering layer, which bears on the layer construction around the cutout and comprises the back electrode.

Abstract: A human interface device is provided, having a substrate. A strain sensitive die is coupled to the substrate wherein the die is capable of providing an electrical signal indicative of a force applied to the strain sensitive die. A force transfer element is positioned adjacent to the strain sensitive die and coupled to the strain sensitive die. A translation element is mechanically coupled to the force transfer element. An elastic element is at least partially surrounding the translation element and the force transfer element, wherein the elastic element provides the mechanical coupling between the translation element and the force transfer element. A force applied to the translation element causes stretching of the elastic element, wherein the stretching of the elastic element causes a force to be applied to the force transfer element; and wherein the force applied to the force transfer element by the elastic element is then applied to the strain sensitive die.

Abstract: A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere.

Abstract: Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract: An impact sensor comprises a silicon substrate; an insulating layer formed over the silicon substrate; a plurality of beams having flexibility that are formed of conductive silicon material; a fixing portion to fix a fixed end of each of the beams, the fixing portion being formed of conductive silicon material; a fixed end line at whose one end is formed the fixing portion, the fixed end line being formed of conductive silicon material on the insulating layer; and a free end line having a pressing portion that faces a free end of each of the beams via a space, the free end line being formed of conductive silicon material on the insulating layer. Respective beam widths, each measured in a direction orthogonal to a length direction joining the fixed end and the free end, of the plurality of beams are set different from each other, thus reducing the space occupied by the sensor.

Abstract: A micro electromechanical system (MEMS) spring element is disposed on a substrate, and includes a fixing portion and a moveable portion. The fixing portion is fixed on the substrate, and includes an insulating layer, a plurality of metal-fixing layers and a plurality of supporting-fixing layers. The insulating layer is disposed on the substrate. The metal-fixing layers are disposed above the insulating layer. The supporting-fixing layers are connected between the metal-fixing layers. The moveable portion has a first end and a second end. The first end is connected with the fixing portion, and the second end is suspended above the substrate. The moveable portion includes a plurality of metal layers and at least a supporting layer. The supporting layer is connected between the adjacent metal layers, and a hollow region is formed between the supporting layer and the adjacent metal layers.

Abstract: Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent alteration of partially completed circuits and devices by subsequent high process temperatures.

Abstract: One aspect of the invention relates to a semiconductor component with cavity structure and a method for producing the same. The semiconductor component has an active semiconductor chip with the microelectromechanical structure and a wiring structure on its top side. The microelectromechanical structure is surrounded by walls of at least one cavity. A covering, which covers the cavity, is arranged on the walls. The walls have a photolithographically patterned polymer. The covering has a layer with a polymer of identical type. In one case, the molecular chains of the polymer of the walls are crosslinked with the molecular chains of the polymer layer of the covering layer to form a dimensionally stable cavity housing.

Abstract: The present invention improves mechanical strength of a micro-electro-mechanical device (MEMS) having a movable portion to improve reliability. In a micro-electro-mechanical device (MEMS) having a movable portion, a portion which has been a hollow portion in the case of a conventional structure is filled with a filler material. As the filler material, a block copolymer that is highly flexible is used, for example. By filling the hollow portion, mechanical strength improves. Besides, warpage of an upper portion of a structure body in the manufacture process is prevented, whereby yield improves. A micro-electro-mechanical device thus manufactured is highly reliable.

Abstract: First, a semiconductor substrate having a first active region and a second active region is provided. The first active region includes a first transistor and the second active region includes a second transistor. A first etching stop layer, a stress layer, and a second etching stop layer are disposed on the first transistor, the second transistor and the isolation structure. A first etching process is performed by using a patterned photoresist disposed on the first active region as a mask to remove the second etching stop layer and a portion of the stress layer from the second active region. The patterned photoresist is removed, and a second etching process is performed by using the second etching stop layer of the first active region as a mask to remove the remaining stress layer and a portion of the first etching stop layer from the second active region.

Abstract: A method for producing a sensor array including a monolithically integrated circuit is described as well as a sensor array. This sensor array has a micromechanical sensor structure, in which a first partial structure which is associated with the sensor structure is produced at the same time as a second partial structure which is associated with the circuit, a process variation of the first partial structure being performed in order to adjust a structure property of the sensor structure while the second partial structure remains the same.

Abstract: Microelectromechanical systems (MEMS) packages, packaged MEMS devices, and methods for making the same are disclosed. The method may include forming a chamber sacrificial layer above an insulating layer that is coupled to a wafer. The method further may include forming a packaging layer above the chamber sacrificial layer. The method additionally may include forming one or more openings through the packaging layer. The method also may include removing the chamber sacrificial layer through the one or more openings. The method may include forming a sealing layer above the packaging layer such that the sealing layer substantially seals the one or more openings to form a hermetic cavity.

Abstract: Embodiments of a micro electro mechanical system are disclosed.

Abstract: Mesh holes 35a and 59a of upper solid layers 35 and upper solid layers 59 are formed to overlie on one another, so that the insulating properties of interlayer resin insulating layers 50 are not lowered. Here, the diameter of each mesh hole is preferably 75 to 300 ?m. The reason is as follows. If the diameter of the mesh hole is less than 75 ?m, it is difficult to overlay the upper and lower mesh holes on one another. If the diameter exceeds 300 ?m, the insulating properties of the interlayer resin insulating layers deteriorate. In addition, the distance between the mesh holes is preferably 100 to 2000 ?m. The reason is as follows. If the distance is less than 100 ?m, the solid layer cannot function. If the distance exceeds 2000 ?m, the deterioration of the insulating properties of the interlayer resin insulating film occurs.

Abstract: An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.