Abstract: Plasma charging devices and methods are disclosed for detecting plasma charging during semiconductor wafer processing. Charging monitors are disclosed having ferroelectric capacitance elements which can be preprogrammed prior to processing steps of interest, and then subsequently measured afterwards, in order to determine whether plasma related charging is a problem in the intervening processing steps.

Abstract: An IC chip comprising, a nearby or remote source capable of particle emissions; circuitry formed in the IC chip that is adversely affected by impacts of particle emissions from said source; and a particle detector formed in the IC chip between the circuitry and source for detecting said particle emissions. In one embodiment of the present invention, the source comprises a solder ball that is formed on a surface of the IC chip, and the solder ball is capable of emitting alpha-particles. The particle emissions detector of the present invention is a reverse biased Schottky diode. The IC chip is formed by (a) providing an IC chip having at least one layer of particle sensitive circuitry formed therein; (b) forming another layer having at least one particle sensor region situated therein on a surface of said IC chip; and (c) optionally, forming at least one particle emission source over said another layer.

Abstract: A structure and method thereof for providing an electrically conductive path between a first conductive point and a second conductive point. The structure includes an insulating material disposed between the first conductive point and the second conductive point. A dipole material is distributed within the insulating material. The dipole material is comprised of randomly oriented magnetic particles. The magnetic particles in a selected localized region of the insulating material are aligned to form an electrically conductive path between the first conductive point and the second conductive point through the insulating material.

Abstract: A device forming a high energy resolution integrated semiconductor &Dgr;E-E detector telescope is disclosed, in which is formed a very thin &Dgr;E detector portion (14) primarily fabricated from a first semiconductor wafer which is bonded/silicidized to a second semiconductor wafer forming an E detector portion (18). This &Dgr;E-E detector provides a well supported very thin &Dgr;E detector for high resolution. The very thin &Dgr;E detector portion bonded/silicidized to the E detector portion further provides between each other a buried metallic layer (16) acting as a contact common to the two detectors, which metal layer is thin and presents a low resistivity.

Abstract: An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

Abstract: An apparatus, system and method for the real-time monitoring of plasma charging during plasma processing are provided which overcome the deficiencies in currently available apparatus, systems and methods. According to one embodiment, the method and apparatus utilizes a detection wafer that comprises an Al pad located on the wafer and placed in contact with the plasma. The potential difference generated between the Al pad and a substrate as a result of plasma processing is the plasma charging voltage Vc. The potential difference is transmitted through electrical contacts located in a modified biased lift pin assembly supporting the detection wafer, and in the detection wafer itself, at locations remote from the plasma. Electrical contact with the detection wafer is thus established by positive physical contact from the biased lift pins and the potential difference is registered on apparatus external to the processing chamber and connected to the electrical contacts located remotely from the plasma.

Abstract: A low-energy particle sensor includes current collection areas which take the form of diodes partially covering the substrate. In detection areas defined alongside the collection areas the small thickness of the material enables low-energy particles (in particular a particles or protons) to penetrate the substrate. The currents generated by particles forming electron-hole pairs in this substrate are collected by the diode regions and sent to a load circuit. Applications include sensors for detectors of products resulting from collisions brought about in particle physics research apparatus.

Abstract: A chip of semiconductor material includes a first layer with a first type of conductivity having a surface on the first major surface of the chip, a second layer with the first type of conductivity having a surface on the second major surface of the chip, and a third layer with the first type of conductivity having a resistivity lower than those of the first and second layers and disposed between the first layer and the second layer. A first region with a second, type of conductivity, extends from the first surface into the first layer, and a second region with the second type of conductivity, extends from the second major surface into the second layer. First, second and third electrical connections are provided for connection with the first region, the second region, and the third layer, respectively.

Abstract: A semiconductor device for surface-shape recognition capable of preventing a destruction of a device due to a discharge of static electricity and an occurrence of cracks at a shape recognition surface when being pressed by an object such as a finger and improving reliability, including a plurality of sensor pad electrodes formed on a substrate and storing charges, a plurality of semiconductor elements formed at a lower portion of the sensor pad electrode and reading charges stored in the sensor pad electrodes, a first protective film formed while covering the sensor pad electrodes and clearances between the sensor pad electrodes, a groove formed in the surface of the first protective film in regions between the sensor pad electrodes, a neutralization electrode impressed with a fixed potential formed in the groove so that a height becomes substantially the same as the depth of the groove, and a second protective film formed while covering the first protective film and the neutralization electrode.

Abstract: A test structure for evaluating plasma damage in thin gate oxides is formed with a single polysilicon floating gate EEPROM device on which an antenna structure delivers charge to a floating gate through a tunnel oxide. The floating gate extends beyond the MOSFET channel in one direction, passing over field oxide and terminating in a pad over a thin tunnel oxide window formed over an isolated n+ diffusion. The n+ diffusion is connected to a metal antenna structure which is exposed to a processing plasma. Charge accumulated on the antenna during plasma exposure causes a tunnel current to flow through the tunnel oxide, and charge to accumulate on the floating gate. A second extension of the polysilicon floating gate passes over a second field oxide region and terminates in a pad over a thicker oxide formed on a second isolated n+ diffusion. The second n+ diffusion forms the control gate of the EEPROM and is connected by wiring to a probe pad.

Abstract: Method for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes.

Abstract: An apparatus for detecting energy and point of incidence of an ionizing event comprising a semiconductor layer with a first type of conductivity, in which at least one first doped region with the first type of conductivity and a corresponding plurality of second doped regions with a second type of conductivity associated to said at least one first doped region are formed on a first surface of said layer, said at least first doped region and said corresponding plurality of second doped regions defining a respective drift path for charge carriers with the first type of conductivity, and at least one third doped region with the second type of conductivity is formed on a second surface of said layer, and means for biasing said second doped regions and said third doped region which is capable of reversely biasing the junctions between the second doped regions and the semiconductor layer and between the third doped region and the semiconductor layer so as to deplete the semiconductor layer.

Abstract: Apparatus and methods for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes.

Abstract: A semiconductor waveguide type photo detector capable of preventing leak current from occurring and excellent in dark current characteristics, and a manufacturing method thereof are provided.

Abstract: A method for manufacturing a semiconductor apparatus for detecting radiation provided with phosphor comprises the steps of forming a phosphor layer integrally with a meshed partition plate having partitions per pixel of the semiconductor apparatus for detecting radiation, and of separating the phosphor per pixel by removing the phosphor on the partitioning portion of the partition plate by the irradiation of laser beam in the form of grooves together with the surface layer of the partitioning portions in order to make the phosphor thick to obtain a higher sensitivity, and also to make pixel pitches finer to enhance resolution, thus obtaining exact images without creating any cross talks between pixels.

Abstract: The present invention intends to provide a radioactive rays detection semiconductor device comprises a substrate, an insulating layer formed on the substrate, p-type Si films formed on the insulating layer and equal in resistance value change rates due to temperature change and different in thickness so as to differ in the changes of the resistance values corresponding to the change of the total dose of the radioactive rays, an insulating film covering the p-type Si films, electrodes deposited in contact holes which are formed in the insulating film to reach both end of the p-type Si films, and Al wiring connecting the electrodes close to each other.

Abstract: A neutron detector array is capable of measuring a wide range of neutron fluxes. The array includes multiple semiconductor neutron detectors. Each detector has a semiconductor active region that is resistant to radiation damage. In one embodiment, the array preferably has a relatively small size, making it possible to place the array in confined locations. The ability of the array to detect a wide range of neutron fluxes is highly advantageous for many applications such as detecting neutron flux during start up, ramp up and full power of nuclear reactors.

Abstract: In a photodiode array suitable for use in an x-ray detector for computed tomography, the influences of direct conversion of x-rays into contributions to the electrical output signal and optical cross-talk between channels in the photodiode array are significantly reduced by integrating a number of extraction diodes into the photodiode array, with one extraction diode disposed between each two neighboring photodiodes. The anodes of all of the extraction diodes are connected together at a common anode contact, the common anode contact being connected to a voltage source which applies a voltage across all of the extraction diodes for operating the extraction diodes reverse biased, i.e. so as to block current flow.

Abstract: A solid state electron or x-ray detector is mounted within the time-varying magnetic deflection fields of a charged particle beam system. A minimum volume of high resistivity conductors and insulating materials are used in the mounting to minimize eddy currents that otherwise cause dynamic deflection distortions. Segmented conductive elastomer members make electrical and mechanical contact with the active surface of the detector. A flexible PC board connects the detector active areas to external signal processing electronics.

Abstract: A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness.

Abstract: A multilayer plate for X-ray imaging is provided, which includes a substrate, a biasing electrode and a selenium-based membrane sandwiched between the substrate and the biasing electrode. The selenium-based membrane comprises a thick photoconductive layer of doped amorphous selenium and one or two thin buffer layers. One of the buffer layers is an amorphous arsenic triselenide layer positioned between the photoconductive layer and the substrate, and the other buffer layer is a unipolar conducting layer of alkali doped selenium positioned between the photoconductive layer and the biasing electrode. Preferably both layers are included. A method of producing such multilayer plates is also disclosed.

Abstract: A charge monitoring apparatus measures an electrical charge deposited on a multiple-layered workpiece, such as a semiconductor wafer, in a plasma processing system. The apparatus includes a charge collection electrode (CCE), a non-conducting patterned layer and a voltage or current sensor. The patterned layer is provided on the CCE and includes a plurality of openings that extend through the patterned layer to the conducting surface of the CCE. The openings create a topology having an adequate aspect ratio to cause electron shading to occur during plasma processing of the workpiece. The voltage or current sensor includes an EEPROM transistor that stores information regarding the amount of electrical charge that accumulates on the CCE during plasma processing.

Abstract: A particle-detector is formed on a die of semiconductor material (20) comprising: first and second layers (22, 23) with a first type of conductivity (N), a third layer (21) with a second type of conductivity (P), interposed between the first and second layers (22, 23), first and second means (25, 31; 26, 32) for electrical connection with the first and second layers (22, 23), respectively, disposed on the opposite surfaces thereof to those of the junctions with the third layer (21) and third means (27, 24) for electrical connection with the third layer (21).To permit large-scale industrial manufacture, the third means (27, 24) for electrical connection with the third layer (21) comprise a region (24) with the second type of conductivity (P) which extends from the front face of the die as far as the third layer (21) and means (27) for surface electrical contact with this region.

Abstract: An Ion-sensitive Field Effect Transistor (ISFET) sensor for sensing ion activity of a solution includes a substrate and an ISFET semiconductor die. The substrate has front surface exposed to the solution, a back surface opposite to the front surface and aperture extending between the front and back surfaces. The ISPET semiconductor die has an ion-sensitive surface with a gate region. The ion-sensitive surface is mounted to the back surface such that the gate region is exposed to the solution through the aperture.

Abstract: A light-activated reflector having a plurality of coplanar arrays of parallel optical fibers that are each covered with a thin coating of a semiconductor material. Silicon, germanium, and indium antimonide, for example, along with other suitable materials, may be used as the coating of semiconductor material. The number and spacing of the coplanar arrays are determined by the shortest wavelength at which the reflector is to be operated. Electron-hole pairs are created in the coating of semiconductor material when it is illuminated by photons having energy greater than the band-gap energy of the semiconductor material. Light is injected into the optical fibers of a selected array. The injected light is absorbed and creates electron-hole pairs in the coating of semiconductor material, which modifies the permittivity of the coating. The absorbed light causes the coating to become reflective at millimeter wave frequencies.

Abstract: When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.

Abstract: An interfacing system adapted for use with integrated circuits and accompanying devices. The inventive system includes an array of field emissive devices (36) which emit an electrons in response to input signals from multiple first circuits (14) on a first substrate (16). The field emissive devices (36) are located on the first substrate (16). An array of detectors (38) on a second substrate (20) receive the electrons across a (gap (42) between the first substrate (16) and the second substrate (20). A potential difference in response to a source of potential (22) between the first substrate (16) and the second substrate (20) accelerates the electrons across the vacuum gap (42). The interfacing system (10) may be constructed with a diameter of less than ten micrometers. Hence, two substrates with multiple circuits may be interfaced with many thousands of parallel connections per square centimeter without the need for multiplexing.

Abstract: A radiation resistant solid state neutron detector is disclosed. The detector uses a neutron convertor material such as boron or lithium to react with neutrons to create charged particles that are received in a semiconductor active region of the detector. The active thickness of the detector is smaller than the range of the charged particles. Since most of the radiation damage produced by impinging charged particles occurs near the end of the range of the particles, displacement damage predominantly occurs outside of the active region. Although the charged particles pass through the semiconductor material, the particles cause electron excitation within the semiconductor material which is detected in the form of an electronic pulse. A preferred semiconductor material for the active region is silicon carbide.

Abstract: A neutron radiation detector is described. A semiconductor material is populated with helium three (.sup.3 He) atoms to increase its overall neutron capture efficiency. Upon capture of a neutron by a .sup.3 He atom, a tritium ion and a proton are generated with energies of 0.191 and 0.573 MeV, respectively. These energies are deposited in the semiconductor material creating electron-hole pairs. The electron-hole pairs are withdrawn from the material by the application of an electric field and are collected as charges at the terminals. The associated circuitry processes the charges into pulses with these being counted and their sizes measured. The results are recorded and displayed. The number of pulses are a measure of the number of neutrons absorbed in the detector and of the neutron flux of interest. In many instances the detector can also be used to detect and display non-neutron type radiation or simultaneously neutron and non-neutron forms of radiative activity.

Abstract: The invention provides a self-powered device having at least one substrate, at least one radioactive power source formed over the substrate, and integrated circuits formed over the substrate. The radioactive power source includes a first active layer of a first conductivity type, a second active layer of a second conductivity type. The first and second active layers form a depletion layer. A tritium containing layer is provided which supplies beta particles that penetrates the depletion layer generating electron-hole pairs. The electron-hole pairs are swept by the electric field in the depletion layer producing an electric current.

Abstract: According to this invention, there is provided a charged particle detection device including a semiconductor substrate, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, a member for forming a potential well, which is constituted by a depletion layer, near a surface of the semiconductor substrate under the electrode, a member for sweeping, into the semiconductor substrate, charges which are generated in the semiconductor substrate by charged particles incident from the electrode and are stored in the potential well, and a member for detecting signal charges generated by the charged particles swept into the semiconductor substrate.

Abstract: The invention provides a high sensitivity semiconductor radiation detection apparatus having pn junctions formed in opposite surfaces of at least one semiconductor wafer. A common electrode for the pn junctions is formed in the substrate region of the semiconductor wafers, and a variable reverse bias voltage is supplied to an electrode formed in contact with at least one of the pn junctions, to vary the thickness of the depletion region generated at said pn junction, and hence the sensitivity of said junction to incident radiation of varying energy levels. By adjusting the relative thickness of the respective depletion regions, different types of radiation may be distinguished.

Abstract: A radiation detection device includes a plurality of pixels, each pixel includes a thin film transistor and a photodiode conductively connected to a gate of the thin film transistor with the photodiode generating a current when the pixel is exposed to x-rays.

Abstract: The scanning of an operating integrated circuit (IC) substrate by an electron (e)-beam is detected by providing conductive plates in the substrate, and triggering a charge-sensitive mechanism such as a field effect transistor (FET) when an e-beam has scanned over the plate. The plates can be fabricated at different levels within the substrate, with a lower plate preferably shaded from the e-beam by an upper plate and providing a reference for the upper plate. E-beam detection occurs either through the positive or negative charging of capacitances associated with the FETs, or from instantaneous negative or positive current flows from the detector plates; a latch is actuated to hold an instantaneously detected current level exceeding a predetermined threshold. The logic state of this latch can be used to modify the functional operation of the IC in real time.

Abstract: Soft error immunity of a storage cell is greatly increased by division of a storage node into at least two portions and location of those portions on opposite sides of an isolation structure, such as a well of a conductivity type opposite to that of the substrate in which transistors of the memory cell may also be formed. The isolation structure thus limits collection of charge to only one of the portions of the storage node and reduces charge collection efficiency to a level where a critical amount of charge cannot be collected in all but a statistically negligible number of cases when such charge is engendered by impingement by ionizing radiation, such as energetic alpha particles. The layout of the memory cell having this feature also advantageously provides a simplified topology for the formation of additional ports comprising word line access transistors and bit lines.

Abstract: A high sensitivity semiconductor radiation detector and semiconductor radiation detection apparatus having pn junctions formed in surfaces of at least one semiconductor wafer. A common electrode for the pn junctions may be formed in substrate regions of the semiconductor wafers, and a variable reverse bias voltage may be supplied to at least one electrode formed in contact with a pair of pn junctions. The variable reverse bias means adjusts depletion region thickness(es) so that the detector can detect and distinguish different kinds of nuclear radiation by differing energy levels.

Abstract: A particle sensor array which in a preferred embodiment comprises a static random access memory having a plurality of ion-sensitive memory cells, each such cell comprising at least one pull-down field effect transistor having a sensitive drain surface area (such as by bloating) and at least one pull-up field effect transistor having a source connected to an offset voltage. The sensitive drain surface area and the offset voltage are selected for memory cell upset by incident ions such as alpha-particles. The static random access memory of the present invention provides a means for selectively biasing the memory cells into the same state in which each of the sensitive drain surface areas is reverse biased and then selectively reducing the reversed bias on these sensitive drain surface areas for increasing the upset sensitivity of the cells to ions. The resulting selectively sensitive memory cells can be used in a number of applications.