Schottky Barrier (e.g., A Transparent Schottky Metallic Layer Or A Schottky Barrier Containing At Least One Of Indium Or Tin (e.g., Sno 2 , Indium Tin Oxide)) Patents (Class 257/449)
Abstract: A protective layer is disposed between a silver reflective electrode and a layer of transparent conductive oxide in a photovoltaic device so as to prevent oxidation of the silver. The protective layer may be continuous or discontinuous and may be fabricated from MgF.sub.2, Si.sub.x N.sub.y or T.sub.ix N.sub.y where x and y are positive numbers.
Type:
Grant
Filed:
November 18, 1991
Date of Patent:
June 22, 1993
Assignee:
United Solar Systems Corporation
Inventors:
Arindam Banerjee, Subhendu Guha, Chi C. Yang
Abstract: An improved junction type photovoltaic element, characterized by having an organic semiconductor layer formed of a polysilane compound of 6000 to 200000 in weight average molecular weight which is represented by the following general formula (I): ##STR1## Wherein, R.sub.1 stands for an albyl group of 1 to 2 carbon atoms; R.sub.2 stands for an alkyl group, cycloalkyl group, aryl group or aralkyl group of 3 to 8 carbon atoms; R.sub.3 stands for an alkyl group of 1 to 4 carbon atoms; R.sub.4 stands for an alkyl group of 1 to 4 carbon atoms; A and A' respectively stands for an alkyl group, cycloalkyl group, aryl group or aralkyl group of 4 to 12 carbon atoms wherein the two substituents may be the same or different one from the other; and each of n and m is a mole ratio showing the proportion of the number of respective monomers versus the total of the monomers in the polymer wherein n+m=1, 0<n.ltoreq.1 and 0.ltoreq.m<1.
Abstract: This invention pertains to a p-i-n In.sub.0.53 Ga.sub.0.47 As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer from 10 to 40 nm thick and a transparent cadmium tin oxide (CTO) layer from 90 to 600 nm thick. The metal layer makes a non-alloyed ohmic contact to the semiconductor surface, acts as a barrier between the semiconductor and the CTO preventing oxidation of the semiconductor from the O.sub.2 in the plasma during reactive magnetron sputtering of the CTO layer, and prevents formation of a p-n junction between the semiconductor and CTO. The CTO functions as the n or p contact, an optical window and an anti-reflection coating. The top electrode also avoids shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the top electrode is non-alloyed, inter-diffusion into the i-region is not relevant, which avoids an increased dark current.
Type:
Grant
Filed:
March 2, 1992
Date of Patent:
May 18, 1993
Assignee:
AT&T Bell Laboratories
Inventors:
Paul R. Berger, Alfred Y. Cho, Niloy K. Dutta, John Lopata, Henry M. O'Bryan, Jr., Deborah L. Sivco, George J. Zydzik