Abstract: An electromagnetic-wave detector having an electromagnetic-wave detection unit having the structure that M (M.gtoreq.1) contiguous pairs of a metallic layer and an insulating layer are provided at the side of incidence of an electromagnetic-wave, such as X-rays.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.

Abstract: A structure for providing direct feedback of power emitted by a surface emitting light emitting device and the subsequent optical power control of the device is disclosed. In a preferred embodiment, an array of vertical cavity surface emitting lasers emit light having a wavelength which is partially detected by an array of photodetectors. The semi-transparent photodetectors array has an absorption coefficient which is relatively small at the wavelength of light emitted by the lasers. Most of the emitted light will be transmitted through the detectors while a small insignificant fraction in magnitude is absorbed and converted to photocurrent for monitoring the output power of the devices. The structure of the device of the present disclosure is simple, readily fabricated through uncomplicated techniques and of materials which do not effect the beam characteristics of the surface emitting devices.

Abstract: A liquid crystal display having a TFT cell array including a plurality of gate lines formed in parallel on a substrate and a plurality of data lines formed perpendicularly to the gate lines. The plurality of gate lines have gate pads at one end, while the plurality of data lines have data pads at either one or both ends. A repair line, which is formed on the periphery of the substrate, intersects the plurality of data lines at both ends, but intersects the plurality of gate lines at only one end.

Abstract: An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the same integrated circuit. For this optical-electronic integrated circuit, the photo detection circuit is made by a metal-semiconductor-metal process. A current is generated when the photo detection circuit is impinged by photons.

Abstract: A semiconductor memory device includes first and second conductive contact layers (12, 15) and an hydrogenated, silicon-rich, amorphous silicon alloy layer (14), particularly an amorphous silicon nitride or amorphous silicon carbide alloy, extending between the contact layers. A defect band is induced in the amorphous silicon layer which lowers the activation energy level for the transport of carriers through the structure by an amount that is selectable and determined by the defect band. The defect band is created by a programming process, for example, using current stressing or particle bombardment. A memory matrix array device is provided by forming a row and column array of such memory devices from common deposited layers on a common substrate with crossing sets of row and column conductors separated by a layer of the alloy material defining a memory device at each of their cross-over regions.

Abstract: High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Abstract: An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of enhanced amorphous silicon is formed by an ion-implantation of a neutral species and a dopant species into a deposited layer of amorphous silicon, such that the antifuse structure will have a stable conductive link in a programmed state and such that it will be less susceptible to off-state leakage in an unprogrammed state. A method for making an antifuse structure includes forming a lower electrode, depositing an amorphous silicon layer over the lower electrode, ion-implanting a neutral species and a dopant species into the amorphous silicon layer, and forming an upper electrode over the amorphous silicon layer.

Abstract: An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semiconductor layer. Plural P.sup.+ -type area units are positioned under and facing the Schottky barrier electrode. An N.sup.+ -type area is disposed in the vicinity of the P.sup.+ -type units. The impurity concentration is such as to cause an avalanche breakdown in at least a portion of the surfaces.

Abstract: A photovoltaic cell comprising a plurality of film layers, at least one of the layers being a semiconductor film of amorphous, hydrogenated carbon. The preferred embodiment comprises a plurality of semiconductor films sandwiched together in layers, every three layers forming a PIN junction. All films are made of amorphous, hydrogenated carbon and vary only by dopant levels within each PIN junction. There are variations in bandgap from one PIN junction to the next in order that the photovoltaic effect in each PIN junction will be caused by a different portion of the spectrum of light.

Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.

Abstract: A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5.times.10.sup.18 atoms/cm.sup.3 or less.

Abstract: A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a Schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydrogenated amorphous silicon film.

Abstract: An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color-detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

Abstract: A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Ge.sub.x Si.sub.1-x epitaxial layer overlain by a ungraded Ge.sub.x.sbsb.0 Si.sub.1-x.sbsb.0 intervening between the silicon substrate and the strained layer. Such a heterostructure can serve as a foundation for such devices as surface emitting LEDs, either n-channel or p-channel silicon-based MODFETs, and either n-channel or p-channel silicon-based MOSFETs.

Abstract: Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on which a Schottky diode is formed between a metal layer and a semiconductor layer of polycrystalline or amorphous silicon extending over the metal layer is used inter alia in matrix display devices, such as LCDs. The Schottky diode forms part of a switching element of such a device and must have a low reverse current up to a reverse voltage of, for example, approximately 10 V. The known semiconductor device having Schottky diodes, in which the semiconductor material extends over a lateral surface of the Schottky metal, is found not to comply with this requirement. To overcome this deficiency a low leakage current is realized over a wide reverse voltage range due to the presence of a dielectric on the lateral surface of the Schottky metal. The dielectric suppresses the leakage current issuing from the lateral surface.

Abstract: By arranging a Schottky diode so that it is sensitive to grazing light only in the back-bias mode, a switching element is obtained which, when used in, for example an active matrix LCD display, has a current-voltage characteristic which is comparable to that of a zener diode and can be driven in a reset mode.