Abstract: A display device and a method of manufacturing a display device are provided. An embodiment of a display device includes a substrate; a first conductive layer disposed on the substrate; a first insulating layer disposed on the first conductive layer; a second conductive layer connected to the first conductive layer through a first contact hole in the first insulating layer; a second insulating layer filling an inside of the first contact hole; and a third insulating layer disposed on the second conductive layer and the second insulating layer. The first insulating layer includes a first region that overlaps the second conductive layer and a second region that does not overlap the second conductive layer, and a top surface of the first region of the first insulating layer is positioned higher than a top surface of the second region of the first insulating layer.

Abstract: A display device includes a first substrate. A transistor is disposed on the first substrate. A light-emitting element is connected to the transistor. An insulating layer is disposed between the transistor and the light-emitting element. A second substrate at least partially overlaps the first substrate. A color conversion layer is disposed on the second substrate. The insulating layer includes a first insulating layer and a second insulating layer. A distance between the first insulating layer and the first substrate is less than a distance between the second insulating layer and the first substrate. The first insulating layer includes a light blocking material.

Abstract: A transistor includes a first gate electrode, a first capping layer, a crystalline semiconductor oxide layer, a second capping layer, a first gate dielectric layer, and source/drain contacts. The first capping layer, the crystalline semiconductor oxide layer, and the second capping layer are sequentially disposed over the first gate electrode. Sidewalls of the second capping layer are aligned with sidewalls of the crystalline semiconductor oxide layer. The first gate dielectric layer is located between the first gate electrode and the first capping layer. The source/drain contacts are disposed on the second capping layer. The crystalline semiconductor oxide layer and the source/drain contacts are located on two opposite sides of the second capping layer.

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

Abstract: A semiconductor memory device includes a first word line formed over a first active region. In some embodiments, a first metal line is disposed over and perpendicular to the first word line, where the first metal line is electrically connected to the first word line using a first conductive via, and where the first conductive via is disposed over the first active region. In some examples, the semiconductor memory device further includes a second metal line and a third metal line both parallel to the first metal line and disposed on opposing sides of the first metal line, where the second metal line is electrically connected to a source/drain region of the first active region using a second conductive via, and where the third metal line is electrically connected to the source/drain region of the first active region using a third conductive via.

Abstract: A transparent display device is disclosed, which may enlarge a transmissive area and increase or maximize a light emission area in a non-transmissive area. The transparent display device includes a substrate provided with a display area including a transmissive area and a non-transmissive area, in which a plurality of subpixels are disposed, and a non-display area adjacent to the display area, at least one inorganic insulating film on the substrate, at least one organic insulating film on the at least one inorganic insulating film, anode electrodes provided in each of the plurality of subpixels over the at least one organic insulating film, a bank provided among the anode electrodes, a light emitting layer on the anode electrodes, and a cathode electrode on the light emitting layer, wherein the at least one inorganic insulating film, the at least one organic insulating film and the bank are provided in only the non-transmissive area.

Abstract: A display substrate, a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate and a white OLED display unit on the base substrate, and further includes: an optical adjustment structure on a light emitting side of the white OLED display unit, where the optical adjustment structure is in a peripheral region of each pixel region. The optical adjustment structure is configured to absorb light in a first wavelength range or convert light in a first wavelength range into light in a second wavelength range.

Abstract: A display may have an array of pixels such as liquid crystal display pixels. The display may include short pixel rows that span only partially across the display and full-width pixel rows that span the width of the display. The gate lines coupled to the short pixel rows may extend into the inactive area of the display. Supplemental gate line loading structures may be located in the inactive area of the display to increase loading on the gate lines that are coupled to short pixel rows. The supplemental gate line loading structures may include data lines and doped polysilicon that overlap the gate lines in the inactive area. In displays that combine display and touch functionality into a thin-film transistor layer, supplemental loading structures may be used in the inactive area to increase loading on common voltage lines that are coupled to short rows of common voltage pads.

Abstract: A display panel and a display device are provided according to embodiments of the application. In the display panel, a first metal electrode layer further includes multiple second metal electrode lines which are located in the same layer as multiple first metal electrode lines. An end of the second metal electrode line is electrically connected with the drain of a thin film transistor; and the other end of the second metal electrode line is electrically connected with the pixel electrode, so that the pixel electrode is electrically connected with the drain of the corresponding thin film transistor through the second metal electrode line. The area occupied by the electric connection region of the pixel electrode and the drain of the corresponding thin film transistor is reduced and the display area of the display panel is increased, when the size and the thickness of the display panel are not increased.

Abstract: A thin-film transistor array substrate includes a substrate, a thin-film transistor disposed on the substrate, where the thin-film transistor includes a semiconductor layer including a channel area and a gate electrode overlapping the channel area, and a storage capacitor including a lower electrode disposed on the channel area and an upper electrode disposed to overlap the lower electrode, where an opening having a single closed curve-shape is defined through the upper electrode. On a plane, the upper electrode includes a first recessed portion and a second recessed portion, each exposing an edge of the lower electrode.

Abstract: A field effect device is provided. The field effect device includes an active gate structure, a gate contact within the active gate structure, wherein the gate contact is the same height as the active gate structure, and a gate cut dielectric on opposite sides of the gate contact and active gate structure.

Abstract: First to fourth switches are provided so that conduction states are able to be controlled independently of each other. The first switch, the third switch, and the second switch are electrically connected in series between a first wiring and a third wiring. The fourth switch has a function of controlling a conduction state between the light-emitting element and a fourth wiring. In a first transistor, a gate is electrically connected to a node to which the third switch and the second switch are electrically connected, one of a source and a drain is electrically connected to a second wiring, and the other is electrically connected to the light-emitting element. A capacitor includes first and second electrodes, the first electrode is electrically connected to a node to which the first switch and the third switch are electrically connected, and the second electrode is electrically connected to the light-emitting element.

Abstract: A base substrate and a first metal layer laminated on the base substrate are included. A first laminated portion and a second laminated portion are arranged on and directly contact a side of the first metal layer. The first laminated portion includes a first insulating layer, a second metal layer, a second insulating layer and a first conductive layer. The first laminated portion is arranged with a first via. The second laminated portion includes a third insulating layer and a second conductive layer laminated on the third insulating layer. The second laminated portion is arranged with a second via. The first via is connected to the first conductive layer, the second via is connected to the second conductive layer, and the first conductive layer is connected to the second conductive layer. The second laminated portion is extended to reach an edge of the first metal layer.

Abstract: A display apparatus includes a substrate including a display area having a plurality of pixel circuits that are spaced apart from each other. An inorganic material layer is arranged in the display area and includes a groove between adjacent pixel circuits of the plurality of pixel circuits. An organic filler is disposed in the groove. The inorganic material layer includes at least one insulating material layer and an etch stop layer. The etch stop layer includes a semiconductor material or a conductive material. The etch stop layer is provided on a bottom surface or a portion of a side wall of the groove.

Abstract: A display device includes: a base substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode arranged on the base substrate to be spaced apart from each other; a pixel defining film on the first pixel electrode, the second pixel electrode, and the third pixel electrode and including a first opening exposing the first pixel electrode, a second opening exposing the second pixel electrode and spaced apart from the first opening, and a third opening exposing the third pixel electrode and spaced apart from the first opening and the second opening; a first organic layer on the first pixel electrode exposed by the first opening; a second organic layer on the second pixel electrode exposed by the second opening; and a third organic layer on the third pixel electrode exposed by the third opening.

Abstract: A display panel and a display device are provided. In the display panel, a plurality of main spacers and a plurality of auxiliary spacers are disposed on a side of a first substrate close to a second substrate, the second substrate further includes a plurality of first lug bosses and a plurality of second lug bosses; an orthographic projection of the main spacers on the second substrate is at least partially overlapped with an orthographic projection of a corresponding first lug boss on the second substrate; an orthographic projection of the auxiliary spacers on the second substrate is away from an orthographic projection of a corresponding second lug boss on the second substrate by a preset distance; and the distance between each of the auxiliary spacers and the corresponding second lug boss is less than a height of the first lug bosses.

Abstract: The disclosure relates to an organic light emitting display panel and an organic light emitting display device including the display panel. Specifically, the organic light emitting display panel includes a buffer layer on a first conductive layer, an active layer on or over the buffer layer, a first insulating film on or over the active layer and overlapping a part of an upper surface of the active layer, a second insulating film on or over the first insulating film and including a first contact hole exposing the part of the upper surface of the active layer, an electrode of an organic light emitting element contacting the active layer through the first and second contact holes, wherein an area in which the active layer and a second conductive layer contact is included in a node at which a reference voltage is applied to a driving transistor.

Abstract: An array substrate includes multiple pixel electrodes constituting first pixel electrode columns, second pixel electrode columns and third pixel electrode columns, and data lines including first data lines, second data lines and third data lines. A first data line, a first pixel electrode column, a second data line, a second pixel electrode column, a third data line and a third pixel electrode column are arranged in sequence in a row direction. Distances between the first pixel electrode column and the first data line, between the second pixel electrode column and the second data line, between the third pixel electrode column and the third data line, and between the first pixel electrode column and the second data line are a first distance to a fourth distance, respectively. The first distance is less than the fourth distance and greater than the second distance and/or the third distance.

Abstract: According to one embodiment an array substrate includes a semiconductor layer scanning and signal lines first and second insulating layers a pedestal and a pixel electrode. The scanning line is opposed to the semiconductor layer. The first insulating layer is provided above the semiconductor layer. The signal line and the pedestal are connected to the semiconductor layer through first and second contact holes in the first insulating layer. The second insulating layer is provided above the pedestal. The pixel electrode is connected to the pedestal through a third contact hole in the second insulating layer. The signal line and the pedestal are provided in layers different from each other.

Abstract: A transparent display device is disclosed, which may have high light transmittance in a non-display area as well as a display area, and may increase or maximize a light emission area in a non-transmissive area. The transparent display device comprises a substrate provided with a display area, in which a plurality of subpixels are disposed, and a non-display area adjacent to the display area, anode electrodes provided in each of the plurality of subpixels over the substrate, a light emitting layer provided over the anode electrodes, a cathode electrode provided over the light emitting layer, a pixel power line provided over the substrate and extended in the display area in a first direction, and a common power line provided over the substrate and extended in the display area in the first direction. The display area includes a non-transmissive area provided with the common power line and the pixel power line, and a transmissive area provided between the common power line and the pixel power line.

Abstract: The present disclosure is drawn to thin-film transistors, electronic displays that include thin-film transistors, and methods of making thin-film transistors. In one example, a thin-film transistor can include a nonconductive substrate, a semiconductor layer on the nonconductive substrate, a source electrode adjacent a first side of the semiconductor layer and partially overlapping a first peripheral portion of the semiconductor layer, a drain electrode adjacent a second side of the semiconductor layer and partially overlapping a second peripheral portion of the semiconductor layer, an etch stop layer on the semiconductor layer, a gat insulator layer on the etch stop layer, and a gate electrode on the gate insulator layer. The source electrode and the drain electrode do not overlap the etch stop layer.

Abstract: A display apparatus with improved light emission uniformity includes a pixel. The pixel includes a driving thin-film transistor (TFT); a storage capacitor; a driving semiconductor layer; a first electrode layer; a second electrode layer; a pixel electrode; a pixel-defining layer defining a light-emitting region; and a conductive layer interposed between the first electrode layer and the pixel electrode and including an extending portion that at least partially overlaps the light-emitting region in a plane view to pass over a central portion of the light-emitting region.

Abstract: A display device may include a substrate including a display area and a non-display area; and pixels provided in the display area, each of the plurality of pixels comprising sub-pixels. Each of the plurality of sub-pixels may include a pixel circuit layer including at least one transistor, and a display element layer including an emission area and a peripheral area, a first electrode provided in the emission area, a second electrode spaced apart from the first electrode, at least one light emitting element provided in the emission area, and including a first end electrically connected to the first electrode, and a second end electrically connected to the second electrode; a first connection line provided in the peripheral area; and a bridge pattern provided in the peripheral area, and diverging from the first connection line. The bridge pattern may be electrically disconnected from each of the first and second electrodes.

Abstract: The present disclosure provides a shift register, a gate driving circuit and a display panel. The shift register includes a transistor, which includes a gate electrode, a gate insulating layer, an active layer, a first electrode and a second electrode; the first and second electrode are of comb-shaped structures; the first electrode includes first and second comb tooth portions arranged at intervals, and a first comb handle portion connecting the first and second comb tooth portions; and comb tooth electrodes of the first comb tooth portions have a different length from those of the second comb tooth portions; the second electrode includes third and fourth comb tooth portions arranged at intervals, and a second comb handle portion connecting the third and fourth comb tooth portions; the first and third comb tooth portions form an inter-digital structure, the second and fourth comb tooth portions form an inter-digital structure.

Abstract: The present invention is about display technology. A display panel and a display device are provided. The display panel includes: a substrate layer; a data line arranged on the substrate layer; a color resist layer which is arranged on the substrate layer and located at two sides of the data line, and includes grooves which are located at least at one side of the data line; a shielding layer arranged on the color resist layer and arranged over the data line; a pixel electrode layer arranged over the shielding layer; and a passivation layer arranged between the shielding layer and the pixel electrode layer and covering the shielding layer and the color resist layer.

Abstract: A display device includes a display area, and a dummy area disposed on one side of the display area, where each of the display area and the dummy area includes a first island pattern and a second island pattern disposed to be spaced apart from each other, and a connection pattern connecting the first island pattern and the second island pattern to each other, and the dummy area includes a dummy common electrode and a common connection electrode electrically connected to the dummy common electrode, which are disposed in each of the first island pattern and the second island pattern thereof.

Abstract: A thin film transistor structure, a gate driver on array (GOA) circuit and a display device are provided. The thin film transistor structure defines a plurality of thin film transistors by patterning an active layer. Therefore, when a defect appears in the gate insulating layer of one of the plurality of thin film transistors and a leakage path is formed, other thin film transistors will not be affected. Therefore, a problem of functional failure of a whole thin film transistor structure can be avoided.

Abstract: A semiconductor device includes a substrate and a first transistor on a first side of the substrate. The semiconductor device further includes a first electrode contacting a first region of the first transistor. The semiconductor device further includes a spacer extending along a sidewall of the first transistor. The semiconductor device further includes a self-aligned interconnect structure (SIS) separated from at least a portion of the first electrode by the spacer, wherein the SIS extends through the substrate. The semiconductor device further includes a second electrode contacting a surface of the first electrode farthest from the substrate, wherein the second electrode directly contacts the SIS.

Abstract: The present application provides an organic light-emitting diode (OLED) display panel and an electronic device. A projection of a touch electrode of the OLED display panel projected on a base substrate is at least partially overlapped with a projection of a support pillar projected on the base substrate. The support pillar includes at least one side surface. An angle between an upper top surface of the support pillar is less than or equal to 90 degrees, and/or an angle between the side surface and a lower bottom surface of the support pillar is greater than or equal to 90 degrees. A common electrode layer is disconnected at the support pillar. Accordingly, the present application improves a report rate for touch control and enhances touch sensitivity of the OLED display panel.

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

Abstract: A display apparatus includes a substrate including a display area in which a display element is arranged, a first thin-film transistor arranged in the display area and including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, the first semiconductor layer including a silicon semiconductor, a first interlayer insulating layer covering the first gate electrode, a second thin-film transistor on the first interlayer insulating layer and including a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer including an oxide semiconductor, and an upper electrode arranged on the first interlayer insulating layer and including a same material as that of the second semiconductor layer and at least overlapping the first gate electrode.

Abstract: A transparent display apparatus includes a first transparent substrate, light emitting units arranged for respective pixels on the first transparent substrate, and a strip unit connected to the light emitting units, wherein each of the light emitting units includes at least one light emitting diode having a size of area of 10,000 ?m2 or less, and a size of area having a transmittance of 20% or less accounts for 30% or less of a display area.

Abstract: A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

Abstract: Provided is a light control film capable of gradually changing the in-plane transmittance and thereby adding an in-plane gradation between light and dark. A light control film 10 according to the present invention includes: a first electrode 22A and a second electrode 22B disposed facing each other; a light control material 14 disposed between the first electrode 22A and the second electrode 22B and changing the transmittance in accordance with the potential difference between the first electrode 22A and the second electrode 22B; and a potential gradient forming part for providing the gradient of the potential difference in the extension direction of the first electrode 22A and the second electrode 22B.

Abstract: An optical sensor array substrate and an optical fingerprint reader are provided. The optical sensor array substrate includes a substrate including a detection area which includes a plurality of photosensitive pixels. Photosensitive pixel includes: a TFT arranged on the substrate; a storage capacitor arranged on the substrate and having a first capacitor plate, and a second capacitor plate electrically connected to the source or drain of the TFT; a photosensitive element located on one side of the storage capacitor away from the substrate, and having one end electrically connected to the second capacitor plate; a first electrode layer located on one side of the photosensitive element away from the substrate and electrically connected to another end of the photosensitive element. An orthographic projection of the second capacitor plate on the substrate at least partially overlaps with an orthographic projection of the first electrode layer on the substrate.

Abstract: A display device comprises a substrate including emission areas, and light blocking areas adjacent to the emission areas, a thin film transistor layer comprising a thin film transistor disposed on the substrate, and a connection line electrically connected to the thin film transistor, a light emitting element layer disposed on the thin film transistor layer and comprising light emitting elements corresponding to the emission areas, an encapsulation layer overlapping the light emitting element layer, and a pad portion disposed on the encapsulation layer and in electrical contact with the connection line through a contact hole in the encapsulation layer.

Abstract: A pixel is discussed, which is disposed in a pixel area defined by a gate line, a data line and a pixel power line, and includes a light emission portion and a pixel circuit, wherein the pixel circuit can include a protrusion electrode protruded from the gate line along a length direction of the data line, and first and second thin film transistors disposed in parallel between the light emission portion and the gate line, using the protrusion electrode as a gate electrode.

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Abstract: A liquid crystal coherent transparent display screen and a liquid crystal-laser transparent display system are provided. The liquid crystal coherent transparent display screen includes a first substrate, a second substrate, a first electrode layer, a first partial reflector, a first alignment layer, a second electrode layer, a second partial reflector, a second alignment layer, and a liquid crystal layer. The first partial reflector and the second partial reflector form an optical resonant microcavity, to replace the polarizer, the analyzer and the optical filters in conventional technology, thereby improving the light transmittance of liquid crystal transparent display.

Abstract: A display device includes a semiconductor substrate, an isolation layer, a light-emitting layer and a second electrode. The semiconductor substrate has a pixel region and a peripheral region located around the pixel region. The semiconductor substrate includes first electrodes and a driving element layer. The first electrodes are disposed in the pixel region and the first electrodes are electrically connected to the driving element layer. The isolation layer is disposed on the semiconductor substrate. The isolation layer includes a first isolation pattern disposed in the peripheral region, and the first isolation pattern has a first side surface and a second side surface opposite to the first side surface. The light-emitting layer is disposed on the isolation layer and the first electrodes, and covers the first side surface and the second side surface of the first isolation pattern. The second electrode is disposed on the light-emitting layer.

Abstract: An emissive display device includes a polycrystalline semiconductor including a channel, source region, and drain region of a driving transistor disposed on a substrate. The device includes a gate electrode of the driving transistor overlapping the channel of the driving transistor, an oxide semiconductor including a channel, a source region, and a drain region of a second transistor disposed on the substrate, and a first connection electrode. The first connection electrode includes a first connector electrically connected to the gate electrode of the driving transistor, a second connector electrically connected to a second electrode of the second transistor, and a main body disposed between the first connector and the second connector. The device includes an initialization voltage line disposed on the substrate and applying an initialization voltage. The initialization voltage line surrounds at least a part of the second connector of the first connection electrode.

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Abstract: The disclosure discloses an array substrate and a preparation method thereof, a display panel and a display device. The array substrate includes: a substrate, and a first metal layer, a metal oxide layer and a second metal layer which are sequentially stacked and isolated from each other on the substrate; the first metal layer includes a light shading metal, a first electrode, and an anti-static line; the metal oxide layer includes a first active layer; the second metal layer includes a gate line and a second electrode; the gate line is connected with the anti-static line through a first TFT, one of the first electrode and the second electrode forms the source and drain electrodes of the first TFT, and the other forms the gate electrode of the first TFT; and the source is electrically connected with the gate line, and the drain is electrically connected with the anti-static line.

Abstract: Disclosed is a display device having improved reliability. The display device includes a first transistor disposed on a substrate, an electrical property of the first transistor being shifted from a first initial value in a decreasing direction; a second transistor disposed on the substrate, an electrical property of the second transistor being shifted from a second initial value in an increasing direction; and a first upper barrier conductive layer disposed so as to overlap a first active layer of the first transistor and not to overlap a second active layer of the second transistor, whereby reliability of each of the first and second transistors is improved.

Abstract: The present disclosure provides a display panel and a display device including the display panel. The display panel has a display region including a first display region and a second display region, and the first display region has a smaller sub-pixel density than the second display region. Light-shielding structures are arranged in the first display region, and one light-shielding structure overlaps a light-emitting region of at least one first sub-pixel. The light-shielding structure group constituted by the light-shielding structures includes main and auxiliary light-shielding structures having the same shape. When viewed from the top at the same viewing angle, the auxiliary light-shielding structure is equivalent to a structure obtained by rotating the main light-shielding structure by a certain angle in a plane where the main light-shielding structure is located. With this design, a light diffraction phenomenon is alleviated and the imaging quality of the under-screen optical device is improved.

Abstract: An electronic device is provided. The electronic device includes a substrate, a first wire, a first semiconductor element and a second semiconductor element. The substrate has a display region and a peripheral region adjacent to the display region. The first wire is disposed in the display region and the peripheral region. The first semiconductor element is disposed in the display region. The second semiconductor element is disposed in the peripheral region and adjacent to the first semiconductor element. The first semiconductor element and the second semiconductor element cross the first wire in two parts respectively and the two parts of the second semiconductor element is less than the two parts of the first semiconductor element in distance.

Abstract: A display device includes a display panel in which a plurality of pixels including first, second, and third subpixels disposed in a region where a plurality of gate lines extending in a first direction and a plurality of data lines extending in a second direction intersect. The display device further includes a gate driving circuit configured to drive the plurality of gate lines, a data driving circuit configured to drive the plurality of data lines, and a timing controller configured to control the gate driving circuit and the data driving circuit. In the display panel, a first data voltage is applied to the first subpixel, and a second data voltage is applied to the second subpixels or the third subpixels.

Abstract: A display device comprises a first substrate, a second substrate disposed opposite to the first substrate, a scan line disposed between the first substrate and the second substrate, and a spacer disposed between the scan line and the second substrate. The spacer overlaps the scan line.

Abstract: A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

Abstract: According to one embodiment, a display device comprises first and second substrates. The first substrate comprise first and second common electrodes, and a first pixel electrode including a pair of first sides arranged in a first direction. The second common electrode includes first and second trunk portions, and a first branch portion extending from the second trunk portion toward the first trunk portion. The first pixel electrode is located between the trunk portions. The first branch portion overlaps with the first pixel electrode between the first sides. A width of the first pixel electrode between the first sides becomes smaller toward the second trunk portion.