Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Abstract: A transistor includes a substrate. A first electrically conductive material layer, having a thickness, is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer overhangs the first electrically conductive material layer. An electrically insulating material layer, having a thickness, is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate. The thickness of the first electrically conductive material layer is greater than the thickness of the electrically insulating material layer.

Abstract: A thin film transistor array panel includes: a gate line and a storage electrode on a substrate and separated from each other; a gate insulating layer covering the gate line and the storage electrode; a data line crossing the gate line and being on the gate insulating layer; a thin film transistor formed at a crossing region of the gate line and the data line, and including a gate electrode, a source electrode, and a drain electrode; a passivation layer exposing a portion of the drain electrode and formed on the thin film transistor and the data line; and a pixel electrode contacting the drain electrode and overlapping the storage electrode with the gate insulating layer interposed therebetween.

Abstract: A thin-film transistor (TFT) and a method of manufacturing the same are disclosed herein. The TFT may include a gate electrode disposed on an insulating substrate, an insulating layer disposed on the insulating substrate and the gate electrode, an active layer pattern disposed on the insulating layer to overlap the gate electrode, a source electrode disposed on the insulating layer and at least part of which overlaps the active layer pattern, and a drain electrode which is separated from the source electrode and at least part of which overlaps the active layer pattern. A first ohmic contact layer pattern may be disposed between the active layer pattern and the source electrode and between the active layer pattern and the drain electrode. The first ohmic contact layer may have higher nitrogen content on its surface than in other portions of the first ohmic contact layer.

Abstract: According to an aspect of the present invention, there is provided a thin-film transistor (TFT) sensor, including a bottom gate electrode on a substrate, an insulation layer on the bottom gate electrode, an active layer in a donut shape on the insulation layer, the active layer including a channel through which a current generated by a charged body flows, an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other.

Abstract: [Problem] A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. [Solving Means] By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

Abstract: A transistor includes a first active layer having a first channel region and a second active layer having a second channel region. A first gate of the transistor is configured to control electrical characteristics of at least the first active layer and a second gate is configured to control electrical characteristics of at least the second active layer. A source electrode contacts the first and second active layers. A drain electrode also contacts the first and second active layers.

Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

Abstract: A thin film transistor, comprising: a substrate; a first electrode formed on the substrate; a first insulation layer formed on the first electrode; a gate electrode formed on the first insulation layer; a second insulation layer formed on the gate electrode; an active layer penetrating through the first and second insulation layers and electrically isolated from the gate electrode; and a second electrode formed on the active layer and electrically connected to the first electrode through the active layer, wherein the first electrode is one of a source electrode and a drain electrode, and the second electrode is the other of the source electrode and the drain electrode.

Abstract: Disclosed is a semiconductor device 100A that has first lightly doped drain regions 31A1 and 32A1 between a source region 34A1 and a channel region 33A1 of a first conductive-type driver circuit TFT 10A1 and/or between a drain region 35A1 and the channel region 33A1 of the first conductive-type driver circuit TFT 10A1, and second lightly doped drain regions 31C and 32C between a source region 34C and a channel region 33C of a first conductive-type pixel TFT 10C and/or between a drain region 35C and the channel region 33C of the first conductive-type pixel TFT 10C, in which the first lightly doped drain regions 31A1 and 32A1 have first conductive-type impurities n1 at a first impurity concentration C1, and the second lightly doped drain regions 31C and 32C have first conductive-type impurities n1 at the first impurity concentration C1 and second conductive-type impurities p2 at a second impurity concentration C2.

Abstract: It is possible to suppress a change in a resistance value caused by a potential of a semiconductor substrate 10 near a resistance element layer 13, a power line passing on or above the resistance element layer, or a signal line, without generating useless current or a distortion in a signal. A first conductive layer 15 biased by the potential of a first electrode 11 and a second conductive layer 16 biased by the potential of a second electrode 12 cover below the resistance element layer equally. A change in the resistance value caused by a potential difference between the resistance element layer and a neighboring semiconductor substrate 14 is cancelled by the first conductive layer and the second conductive layer covering at least one of above and below the resistance element layer with both ends biased, so the change in the resistance value is suppressed.

Abstract: A thin film transistor substrate includes a substrate, a gate electrode on the substrate, an active layer on or below the gate electrode (the active layer at least partially overlapping the gate electrode) including a first active region and a second active region, the first active region and the second active region facing each other and extending beyond the gate electrode, a source electrode electrically connected to the first active region and a drain electrode electrically connected to the second active region, wherein the active layer includes a recess region which is at least partially recessed from a surface of the active layer facing the gate electrode, and the recess region includes a portion extending between the first active region and the second active region.

Abstract: Disclosed is a method for manufacturing a thin film transistor in which a semiconductor film in a channel portion is provided between a source electrode and a drain electrode, wherein a partition layer (a bank) can be appropriately formed. The method comprises the steps of: forming two underlying electrodes on an underlying layer; forming a partition layer on the surface of the underlying layer containing the two underlying electrodes so as to surround an area where the source electrode and the drain electrode are to be formed; forming the source electrode and the drain electrode by a plating method on the surfaces of the two underlying electrodes, which are surrounded by the partition layer; and applying semiconductor solution, in which a semiconductor material is dissolved or dispersed, to the area surrounded by the partition layer so that a semiconductor film is formed in the area.

Abstract: A vehicle has a display device which widens the field of view (visible area) reflected by a side mirror or a back mirror mounted on the vehicle. To enable a driver driving the vehicle to confirm safety even when it is difficult for the driver to visually recognize some of objects surrounding the vehicle, a liquid crystal display device or an EL display device is provided in the side mirror (door mirror), the back mirror (room mirror) or in an interior portion of the vehicle. A camera is mounted on the vehicle and an image from the camera is displayed on the display device. Further, information read from a sensor (distance measuring sensor) having the function of measuring the distance to another vehicle, and a sensor (impact sensor) having the function of sensing an externally applied impact force larger than a predetermined value is displayed on the display device.

Abstract: An organic light-emitting display device includes a substrate; a thin-film transistor on the substrate; a first insulating layer covering the thin-film transistor; a first electrode on the first insulating layer, and electrically connected to the thin-film transistor; a second insulating layer on the first insulating layer so as to cover the first electrode, and having an opening for exposing a part of the first electrode; a porous member in the second insulating layer; a second electrode on the second insulating layer, and facing the first electrode so as to correspond to the opening; and an organic emission layer between the first electrode and the second electrode so as to correspond to the opening. The organic light-emitting display device may prevent degradation of characteristics of an organic light-emitting device due to discharge of gas from an organic material.

Abstract: A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.

Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

Abstract: Disclosed is a thin film transistor including: a gate insulating layer covering a gate electrode; a microcrystalline semiconductor region over the gate insulating layer; a pair of amorphous semiconductor region over the microcrystalline semiconductor; a pair of impurity semiconductor layers over the amorphous semiconductor regions; and wirings over the impurity semiconductor layers. The microcrystalline semiconductor region has a surface having a projection and depression on the gate insulating layer side. The microcrystalline semiconductor region includes a first microcrystalline semiconductor region which is not covered with the amorphous regions and a second microcrystalline semiconductor region which is in contact with the amorphous semiconductor regions. A thickness d1 of the first microcrystalline semiconductor region is smaller than a thickness d2 of the second microcrystalline semiconductor region and d1 is greater than or equal to 30 nm.

Abstract: In a thin film transistor substrate (10) having an island-like channel protection layer (15a) covering a channel portion of an oxide semiconductor layer (14), a source electrode (16S) and a drain electrode (16D) are formed of an aluminum alloy film or a multilayer film including an aluminum alloy film.

Abstract: A flexible semiconductor device includes an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element includes a semiconductor layer formed on the top surface of the insulating film, a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer, and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulating film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

Abstract: A light-emitting device includes a substrate and a planarizing film above the substrate. The planarizing film has a recessed portion between non-recessed portions. A bottom electrode layer is above the non-recessed portions. A semiconductor interlayer is above the bottom electrode layer. A filling layer is above the recessed portion. The filling layer comprises a same material as the semiconductor layer and has an inner portion between outer portions. A bank is above the recessed portion of the planarizing film and edge portions of the bottom electrode layer, with each of the edge portions of the bottom electrode layer neighboring the recessed portion of the planarizing film. The filling layer inner portion has a thickness of t1, the filling layer outer portions have a thickness of t2, and t1 is greater than t2.

Abstract: An organic light-emitting display is disclosed. In one embodiment, the display includes i) a substrate, ii) a thin film transistor formed on the substrate, and comprising i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, and iii) source and drain electrodes that are electrically connected to the active layer and iii) a first electrode electrically connected to the thin film transistor. The display further includes an intermediate layer formed on the first electrode and comprising an organic emission layer and a second electrode formed on the intermediate layer, wherein the source electrode or the drain electrode has an optical blocking portion extending in the direction of substrate thickness.

Abstract: A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm2/Vs and an amorphous phase, wherein the VI A element excludes oxygen. Thus, a driving characteristic of the thin film transistor may be improved.

Abstract: A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. A third electrically conductive material layer is in contact with and positioned on the second electrically conductive material layer. The third electrically conductive material layer overhangs the second electrically conductive material layer.

Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Abstract: An organic light emitting diode display device is provided. The organic light emitting display device includes at least one capacitor, at least one transistor, and an organic light emitting element connected to the capacitor and the transistor. The transistor includes a first structure and a second structure disposed on the first structure with a first insulating layer therebetween. The capacitor includes a first electrode and a second electrode disposed on the first electrode with the insulating layer therebetween. A distance between the first electrode and the second electrode in at least a region, is less than a distance between the first structure and the second structure.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.

Abstract: A display apparatus includes a thin film transistor provided on a substrate and a pixel electrically coupled to the thin film transistor. The thin film transistor includes a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer and having a first contact hole and a second contact hole, a source electrode on the first insulating layer and making contact with the semiconductor layer through the first contact hole, a drain electrode on the first insulating layer and making contact with the semiconductor layer through the second contact hole, a gate electrode between the source electrode and the drain electrode and having a stacked structure including a first conductive layer and a second conductive layer, and a second insulating layer between the source electrode and the drain electrode and covering the gate electrode.

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

Abstract: A threshold voltage of a thin film transistor is adjusted. The thin film transistor is manufactured through the steps of: introducing a semiconductor material gas into a treatment chamber; forming a semiconductor film in the treatment chamber over a gate insulating layer provided covering a gate electrode; evacuating the semiconductor material gas in the treatment chamber; introducing rare gas into the treatment chamber; performing plasma treatment on the semiconductor film in the treatment chamber; forming an impurity semiconductor film over the semiconductor film; processing the semiconductor film and the impurity semiconductor film into island shapes, so that a semiconductor stack is formed; forming source and drain electrodes in contact with an impurity semiconductor layer included in the semiconductor stack. Argon is preferably used as the rare gas. The rare gas element is preferably contained in the semiconductor film at 2.5×1018 cm?3 or more.

Abstract: Some embodiments include a method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof. Other embodiments of related methods and structures are also disclosed.

Abstract: A thin-film transistor includes: a gate electrode; a semiconductor layer separated from the gate electrode with a separation insulating layer in between; and a source electrode and a drain electrode that are connected with the semiconductor layer and are separated from each other. Between the source electrode and the drain electrode, a thickness of the separation insulating layer at a first region where the gate electrode does not overlap both the source electrode and the drain electrode is smaller than a thickness of the separation insulating layer at a second region where the gate electrode overlaps one or both of the source electrode and the drain electrode.

Abstract: It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a desired diameter of a pillar-shaped semiconductor.

Abstract: A thin film transistor substrate includes a substrate, a gate electrode on the substrate, an active layer on or below the gate electrode (the active layer at least partially overlapping the gate electrode) including a first active region and a second active region, the first active region and the second active region facing each other and extending beyond the gate electrode, a source electrode electrically connected to the first active region and a drain electrode electrically connected to the second active region, wherein the active layer includes a recess region which is at least partially recessed from a surface of the active layer facing the gate electrode, and the recess region includes a portion extending between the first active region and the second active region.

Abstract: To provide a miniaturized semiconductor device with stable electric characteristics in which a short-channel effect is suppressed. Further, to provide a manufacturing method of the semiconductor device. The semiconductor device (transistor) including a trench formed in an oxide insulating layer, an oxide semiconductor film formed along the trench, a source electrode and a drain electrode which are in contact with the oxide semiconductor film, a gate insulating layer over the oxide semiconductor film, a gate electrode over the gate insulating layer is provided. The lower corner portions of the trench are curved, and the side portions of the trench have side surfaces substantially perpendicular to the top surface of the oxide insulating layer. Further, the width between the upper ends of the trench is greater than or equal to 1 time and less than or equal to 1.5 times the width between the side surfaces of the trench.

Abstract: There is provided a method of manufacturing a semiconductor device including: forming a gate electrode on a substrate ; forming a gate insulating layer of which a recessed portion is formed in a region in which a channel formation region is to be formed, on the substrate and the gate electrode; forming the channel formation region including an organic semiconductor material within the recessed portion based on a coating method; and forming source/drain electrodes on portions of the channel formation region from on the gate insulating layer.

Abstract: Provided is an organic light-emitting display device that can display a full color image by forming a simple structure of light-emitting layers and a method of manufacturing the same. The organic light-emitting display device includes a substrate; a first electrode layer formed on the substrate; a second electrode layer which is formed above the first electrode layer and faces the first electrode layer; and a light-emitting layer interposed between the first electrode layer and the second electrode layer, wherein the light-emitting layer comprises first and second light-emitting layers respectively corresponding to first and second pixels having different colors from each other, and the first light-emitting layer is commonly formed in the first and second pixels, and the second light-emitting layer is formed in the second pixel.

Abstract: A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode electrically insulated from the semiconductor layer; and an insulative layer configured for insulating the source electrode, the drain electrode, and the semiconductor layer from each other, wherein the insulative layer is made of a polymeric material with an elastic modulus ranged from about 0.1 megapascal (MPa) to about 10 MPa.

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

Abstract: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.

Abstract: Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

Abstract: An offset transistor and a non-offset transistor each including an oxide semiconductor are formed over one substrate. An oxide semiconductor layer, a gate insulator, and first layer wirings which serve as gate wirings are formed. After that, the offset transistor is covered with a resist and impurities are mixed into the oxide semiconductor layer, so that an n-type oxide semiconductor region is formed. Then, second layer wirings are formed. Through the above steps, the offset transistor and the non-offset transistor (e.g., aligned transistor) can be formed.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: The invention provides a transistor having a leak current between a source and drain in a nitride compound semiconductor formed on a substrate that is reduced. A gate electrode, a source electrode and a drain electrode are formed respectively on the surface of the nitride compound semiconductor formed on the silicon substrate in the transistor. At least one of the source electrode and the drain electrode is surrounded by an auxiliary electrode connected with the gate electrode. Because a depletion layer is formed in the nitride compound semiconductor under the auxiliary electrode, a route of the leak current is shut off and the leak current between the source and drain may be effectively reduced.

Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

Abstract: Provided are an organic light emitting display device (OLED) and a method of fabricating the same. When a electrically conductive line and a gate electrode are formed at the same time or when a first electrode is formed, interconnections for electrically connecting elements are formed. Thus, the number of used masks can be reduced, so that the overall fabrication process can be shortened and the production cost can be reduced.

Abstract: A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.

Abstract: Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

Abstract: A thin-film transistor (TFT) substrate includes a gate electrode, a gate insulation pattern, a channel pattern, a first organic insulation pattern, a source electrode and a drain electrode. The gate electrode is formed on a base substrate. The gate insulation pattern is formed on the gate electrode and is smaller than the gate electrode. The channel pattern is formed on the gate insulation pattern and the channel pattern is smaller than the gate electrode. The first organic insulation pattern is formed on the base substrate to cover the channel pattern, the gate insulation pattern and the gate electrode.