Coating Of Semi-insulating Material (e.g., Amorphous Silicon Or Silicon-rich Silicon Oxide) Patents (Class 257/646)
  • Monolithic high-voltage capacitor
    Patent number: 5187637
    Abstract: A high voltage capacitor structure for integrated circuits or the like. The capacitor includes a provision for equalizing charge when multiple capacitors are series coupled. Charge is equalized by a SiN layer overlaying, and in contact with one terminal of, the capacitor. A ground ring surrounds the capacitor structure and is also overlayed by, and in contact with, the SiN layer.
    Type: Grant
    Filed: February 14, 1992
    Date of Patent: February 16, 1993
    Assignee: AT&T Bell Laboratories
    Inventor: Milton L. Embree