Abstract: The acrylic composition for sealing contains an acrylic compound, a polyphenylene ether resin including a radical-polymerizable substituent at a terminal, an inorganic filler, a thermal radical polymerization initiator, and a thermoplastic resin.

Abstract: A package includes a package component, a device die over and bonded to the package component, a metal cap having a top portion over the device die, and a thermal interface material between and contacting the device die and the metal cap. The thermal interface material includes a first portion directly over an inner portion of the device die, and a second portion extending directly over a corner region of the device die. The first portion has a first thickness. The second portion has a second thickness greater than the first thickness.

Abstract: A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a first liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the first liner, which is subsequently removed and a second liner formed with a low-k or extra low-k dielectric is formed in its place.

Abstract: A laser diode device includes a laser diode component, a lens, a first carrying element, a driving chip and a second carrying element. The first carrying element receives the laser diode component and the lens. The second carrying element receives the driving chip and is disposed below the first carrying element to carry the first carrying element and electrically connected to the first carrying element.

Abstract: A package includes a first molding material, a lower-level device die in the first molding material, a dielectric layer over the lower-level device die and the first molding material, and a plurality of redistribution lines extending into the first dielectric layer to electrically couple to the lower-level device die. The package further includes an upper-level device die over the dielectric layer, and a second molding material molding the upper-level device die therein. A bottom surface of a portion of the second molding material contacts a top surface of the first molding material.

Abstract: A semiconductor device includes: a first semiconductor element; a first conductor plate laminated on the first semiconductor element and connected to the first semiconductor element; a first power terminal connected to the first conductor plate, the first power terminal including a body portion extending in a first direction and a joining portion extending in a second direction different from the first direction, the joining portion being connected to the first conductor plate; and a sealing body configured to seal the first semiconductor element, the first conductor plate, the joining portion, and a part of the body portion, the sealing body having a first surface that is a surface from which the body portion projects and a second surface that is a surface placed on an opposite side of the sealing body from the first surface.

Abstract: The present disclosure provides chip architectures for FPGAs and other routing implementations that provide for increased memory with high bandwidth, in a reduced size, accessible with reduced latency. Such architectures include a first layer in advanced node and a second layer in legacy node. The first layer includes an active die, active circuitry, and a configurable memory, and the second layer includes a passive die with wiring. The second layer is bonded to the first layer such that the wiring of the second layer interconnects with the active circuitry of the first layer and extends an amount of wiring possible in the first layer.

Abstract: A semiconductor package structure is provided. The structure includes a first semiconductor die having a first surface and a second surface opposite thereto. A first molding compound surrounds the first semiconductor die. A first redistribution layer (RDL) structure is disposed on the second surface of the first semiconductor die and laterally extends on the first molding compound. A second semiconductor die is disposed on the first RDL structure and has a first surface and a second surface opposite thereto. A second molding compound surrounds the second semiconductor die. A first protective layer covers a sidewall of the first RDL structure and a sidewall of the first molding compound.

Abstract: An optical package device comprises a carrier, a die, a support element, and an encapsulant. The die is on the carrier. The support element is on the carrier and adjacent to the die. The encapsulant covers the die and the support element. The encapsulant has a first top surface over the die and a second top surface adjacent to the first top surface. A ratio of a distance between the first top surface and the second top surface of the encapsulant to a distance between the die and the first top surface of the encapsulant is less than 0.1.

Abstract: A semiconductor structure with a through silicon via includes a substrate having a front side and a back side. The through silicon via penetrates the substrate. A device is disposed on the front side of the substrate. Numerous dielectric layers cover the front side. A first test pad for testing the device is disposed on the front side of the substrate. A second test pad for testing the through silicon via is disposed on the back side of the substrate. A method of fabricating and testing the semiconductor structure is also provided.

Abstract: A semiconductor device package is provided. The package can include a stack of semiconductor dies over a substrate, the substrate including a plurality of electrical contacts, and an annular interposer disposed over the substrate and surrounding the stack of semiconductor dies. The annular interposer can include a plurality of circuit elements each electrically coupled to at least a corresponding one of the plurality of electrical contacts. The package can further include a lid disposed over the annular interposer and the stack of semiconductor dies.

Abstract: A semiconductor device with small variations in high frequency characteristics by suppressing variations in impedance while maintaining high heat radiation is provided. The semiconductor device including a semiconductor package having two terminals, a wiring board having an opening at which the semiconductor package is positioned and having two electrodes connected to the two terminals and a heat sink fixing the semiconductor package in which a center of the semiconductor package is decentered with respect to a center of the opening is used. Also, the semiconductor device in which a center of the two electrodes is decentered from a center of the opening is used.

Abstract: A semiconductor package may include: a plurality of slave chips stacked over a master chip through a through silicon via (TSV); a first guard unit disposed around each of the slave chips; and a second guard unit formed at a first distance from the first guard unit and disposed at the master chip.

Abstract: A semiconductor device package includes an electronic component, a first substrate, a first bonding wire and a second substrate. The electronic component has a first surface. The first substrate is disposed on the first surface of the electronic component. The first bonding wire electrically connects the first substrate to the electronic component. The second substrate is disposed on the first surface of the electronic component. The second substrate defines an opening accommodating the first substrate and the first bonding wire.

Abstract: A device includes a first chip is embedded in a molding compound layer, wherein the first chip is shifted toward a first direction, a second chip over the first chip and embedded in the molding compound layer, wherein the second chip is shifted toward a second direction opposite to the first direction and a plurality of bumps between the first chip and the second chip.

Abstract: An embedded circuit board includes a circuit board including a flexible base layer, a first conductive circuit layer, a second conductive circuit layer, two adhesive layers, and two copper plates. The first conductive circuit layer and the second conductive circuit layer are formed on corresponding opposite base layer surfaces of the base layer and electrically interconnected together. A photosensitive layer is located on one surface of the circuit board. A component is located within a mounting slot formed within the photosensitive layer. Each copper plate includes a flexible insulating film and forms a third conductive circuit layer. The flexible insulating film is adhered to a corresponding one of the circuit board or the photosensitive material layer by a corresponding one of the adhesive layers.

Abstract: A stack package includes a second sub-package stacked on a first sub-package. The stack package also includes a plurality of dummy balls located between the first and second sub-packages to support the second sub-package. Each of the first and second sub-packages includes a semiconductor die and a bridge, die which are spaced apart from each other.

Abstract: Embodiments are directed to a package that includes an electric device having a recess. In one embodiment, the electric device is a sensor and the recess reduces signal drift of the sensor caused by thermal expansion of the package. In another embodiment, the recess is substantially filled with adhesive material, thus increasing adhesion between the electric device and a substrate of the package while at the same time allowing for lower adhesive fillets.

Abstract: A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.

Abstract: Semiconductor device packages may include a support structure having electrical connections therein. Semiconductor device modules may be located on a surface of the support structure. A molding material may at least partially surround each semiconductor module on the surface of the support structure. A thermal management device may be operatively connected to the semiconductor device modules on a side of the semiconductor device modules opposite the support structure. At least some of the semiconductor device modules may include a stack of semiconductor dice, at least two semiconductor dice in the stack being secured to one another by diffusion of electrically conductive material of electrically conductive elements into one another.

Abstract: A package that includes a substrate comprising an interposer interconnect and a cavity, a redistribution portion coupled to the substrate, the redistribution comprising a plurality of redistribution interconnects, and a first die coupled to the redistribution portion through the cavity of the substrate. A substantial region between a side surface of the first die and the substrate is free of an encapsulation layer. In some implementations, the substrate is free of a metal ring that surrounds the first die. In some implementations, the redistribution portion comprises a barrier layer and a first interconnect coupled to the barrier layer. The barrier layer is coupled to the interposer interconnect.

Abstract: A multichip module includes a plurality of semiconductor substrates and a plurality of surface mounting parts. The plurality of semiconductor substrates each have a wiring line region which contains a wiring line to pierce from one of the surfaces to the other surface. A plurality of surface mounting parts are mounted on either of the plurality of surface mounting parts. The plurality of semiconductor substrates are stacked to form a multilayer structure. The first surface mounting part as at least one of the plurality of surface mounting parts is arranged in an inside region of the multilayer structure.

Abstract: An optoelectronic package includes a carrier, a light emitting die, a cover, and an encapsulation material. The carrier has a carrying plane and a wiring layer on the carrying plane. The light emitting die is mounted on the carrying plane and electrically connected to the wiring layer. The cover is connected to carrier. A cavity is formed between the cover and the carrier, and the light emitting die is within the cavity. The encapsulation material formed on the carrier surrounds the cover. The encapsulation material completely covers the interface between the cover and carrier.

Abstract: The present disclosure relates to a microelectronics package with a self-aligned stacked-die assembly and a process for making the same. The disclosed microelectronics package includes a module substrate, a first die with a first coupling component, a second die with a second coupling component, and a first mold compound. The first die is attached to the module substrate. The first mold compound resides over the module substrate, surrounds the first die, and extends above an upper surface of the first die to define a first opening. Herein, the first mold compound provides vertical walls of the first opening, which are aligned with edges of the first die in X-direction and Y-direction. The second die is stacked with the first die and in the first opening, such that the second coupling component is mirrored to the first coupling component.

Abstract: A semiconductor module includes: a circuit board on which a first semiconductor chip and a second semiconductor chip are mounted and includes a first through hole formed with a conductor foil therein; a press-fit terminal that is electrically connected to the conductor foil in the first through hole of the circuit board; and a second resin that is disposed on a surface side and a back surface side of the circuit board. Further, the press-fit terminal is provided with a pressure contact portion which is press-fitted into the first through hole and is electrically connected to the conductor foil in the first through hole, and the second resin on the surface side of the circuit board and the second resin on the back surface side of the circuit board are integrally formed via a second resin that is filled in the first through hole.

Abstract: Package assemblies for and methods of packaging integrated circuit chips are described. Disclosed package assemblies have spacers and recessed regions comprising IC chips. Architectural structures are provided that enable, for example, three dimensional (3D) packaging (or system in package (SiP) or multi-chip modules), systems-on-chip 3D packaging, and hybrid 3D bonding. Embodiments of the invention can be used, for example, to create logic-to-memory, memory-to-memory, and logic-to-logic interface stacking assemblies.

Abstract: A memory layout is provided. The layout comprises a circuit board, a plurality of memories, a processing unit, and a reflection absorption unit. The circuit board has a first surface and a second surface. The first surface is set with a first wire unit and a second wire unit corresponding to each other. The memories are separately set on the first and second surfaces of the circuit board and connect to the first and second wire units. The processing unit connects to the first wire unit. The reflection absorption unit connects to the second wire unit. Thus, not only the capacity of the memories is increased, but also, during operating the memories, related reflection signals are absorbed by the reflection absorption unit for stably operating the memories with operation velocity enhanced as well.

Abstract: The present disclosure provides a packaging device for an integrated power supply system and a packaging method thereof. The packaging device comprises: a power consumption system die and a power supply system die below the power consumption system die; the power supply system die comprises an active module, a passive module and a rewiring layer, wherein the active module and the reactive module are molded, and the rewiring layer is located above the molded active module and passive module, to connect the active module and the passive module, and a plurality of power supply tracks are disposed in the rewiring layer to abut the power consumption system die; the power consumption system die is abutted with the plurality of power supply tracks; and an external power source supplies power to the power consumption system die through the power supply system die.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: A package structure including a semiconductor die, a redistribution layer, a plurality of antenna patterns, a die attach film, and an insulating encapsulant is provided. The semiconductor die have an active surface and a backside surface opposite to the active surface. The redistribution layer is located on the active surface of the semiconductor die and electrically connected to the semiconductor die. The antenna patterns are located over the backside surface of the semiconductor die. The die attach film is located in between the semiconductor die and the antenna patterns, wherein the die attach film includes a plurality of fillers, and an average height of the die attach film is substantially equal to an average diameter of the plurality of fillers. The insulating encapsulant is located in between the redistribution layer and the antenna patterns, wherein the insulating encapsulant encapsulates the semiconductor die and the die attach film.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

Abstract: A semiconductor chip assembly includes first and second semiconductor dies that each include opposite facing upper and lower sides and an outer edge side, and an electrical interposer having opposite facing first and second conductive surfaces and a conductive connection between the conductive surfaces. The second semiconductor die is mounted on top of the first semiconductor die and the interposer such that the lower side of the second semiconductor die faces the first semiconductor die and the interposer, a first lateral section of the second semiconductor die at least partially covers the upper side of the first semiconductor die, and a second lateral section of the second semiconductor die extends past the outer edge side of the first semiconductor die. The first conductive surface is electrically connected to a first terminal that is disposed on a lower side of the second semiconductor die.

Abstract: A semiconductor chip includes a semiconductor die formed on a substrate, a first power mesh formed on the substrate, and a second power mesh formed on the substrate electrically isolated from the first power mesh. The semiconductor chip also includes a first circuit block formed on the substrate and electrically connected to the first power mesh, and a second circuit block formed on the substrate and electrically connected to the second power mesh. The first circuit block and the second circuit block are communicatively coupled to a first plurality of external circuit connections and a second plurality of external circuit connections, respectively. The semiconductor chip also includes one or more first signal pins and one or more second signal pins formed on the substrate, the first and second signal pins designed to receive external signals.

Abstract: An electronic package is provided, including: a first substrate having a first insulating portion; a first electronic component disposed on the first substrate; a second substrate having a second insulating portion and stacked on the first substrate through a plurality of conductive elements; and a first encapsulant formed between the first substrate and the second substrate. The first insulating portion of the first substrate differs in rigidity from the second insulating portion of the second substrate. As such, during a high temperature process, one of the first substrate and the second substrate pulls at the other to bend toward the same direction, thereby reducing warpage deviation of the overall electronic package. The present invention further provides a method for fabricating the electronic package.

Abstract: Some forms relate to an electronic assembly that includes a die that includes an upper surface and a conductive column extending from the upper surface such that the conductive column is not surrounded by any material other than where the conductive column engages the die. Other forms relate to an electronic package that includes a stack of electronic assemblies where each electronic assembly includes a die that having an upper surface and a plurality of conductive columns extending from the upper surface such that each conductive column is not surrounded by any material other than where the conductive column engages the die, and wherein the stack of electronic assemblies is arranged in an overlapping configuration such the plurality of conductive columns on each electronic assembly are not covered by another electronic assembly.

Abstract: Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

Abstract: A semiconductor package includes a build-up structure; a semiconductor disposed on the build-up structure in a flip-chip manner and having a plurality of bumps penetrating therethrough; an electronic element disposed on the semiconductor chip; and an encapsulant formed on the build-up structure and encapsulating the semiconductor chip and the electronic element, thereby improving the product yield and the overall heat dissipating efficiency.

Abstract: A semiconductor manufacturing apparatus and a method of manufacturing semiconductor device are provided. The semiconductor manufacturing apparatus includes a loading unit configured to load a wafer having a first surface to which a die attach film is attached through an ultraviolet sensitive layer, an ultraviolet light source configured to irradiate ultraviolet light onto the first surface of the wafer attached to the die attach film to weaken adhesive strength of the ultraviolet sensitive layer, and a camera configured to generate a wafer image by capturing ultraviolet light transmitted through a second surface of the wafer opposite to the first surface of the wafer.

Abstract: An integrated fan-out package having a multi-band antenna and a method of forming the same are disclosed. An integrated fan-out package includes a semiconductor die, a molding layer and a plurality of through integrated fan-out vias. The molding layer is aside the semiconductor die. The through integrated fan-out vias are through the molding layer and arranged to form a plurality of dipole antennas. At least one of the plurality of dipole antennas includes two dipole arms each having a transmitting strip and a radiating strip connected to the transmitting part, and the radiating strip has a first part, a second part and a filter part between and in contact with the first part and the second part. The cross-sectional area of the filter part is less than the cross-sectional area of the first part or the second part of the radiating strip.

Abstract: Disclosed is a semiconductor package. The semiconductor package may include a substrate a semiconductor chip mounted over a surface of the substrate such that an active surface of the semiconductor chip faces the surface of the substrate. The semiconductor chip and substrate may be configured for shielding or scattering electromagnetic waves.

Abstract: A semiconductor apparatus includes a chip ID generation unit, a chip ID transmission unit and a chip stack information generation unit. The chip ID generation unit is configured to generate a chip ID signal. The chip ID transmission unit is configured to output the chip ID signal to a common line on the basis of whether another chip is electrically coupled therewith. The chip stack information generation unit is configured to be electrically coupled with the common line in response to the chip ID signal and generate a stack information signal.

Abstract: The semiconductor package including a first semiconductor package including a first semiconductor package substrate, and a first semiconductor chip on the first semiconductor package substrate, an interposer disposed on the first semiconductor package is provided. Interposer electrically connects the first semiconductor package with an external semiconductor package, and has first and second sides opposed to each other. The second side is located between the first side and the first semiconductor package substrate, a first recess is formed in the second side of the interposer. The first recess has side walls extended from the second side toward the first side of the interposer and an upper surface connected to the side walls and the upper surface of the first recess faces the first semiconductor chip and a via in the interposer. The via does not transmit an electrical signal between the first semiconductor package and the external semiconductor package.

Abstract: In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing a thermal solution for 3D packaging.

Abstract: A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.

Abstract: A device comprises a first package component, and a first metal trace and a second metal trace on a top surface of the first package component. The device further includes a dielectric mask layer covering the top surface of the first package component, the first metal trace and the second metal trace, wherein the dielectric mask layer has an opening therein exposing the first metal trace. The device also includes a second package component and an interconnect formed on the second package component, the interconnect having a metal bump and a solder bump formed on the metal bump, wherein the solder bump contacts the first metal trace in the opening of the dielectric mask layer.

Abstract: A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

Abstract: Methods, systems, and devices for compensating for memory input capacitance. Techniques are described herein to alter the capacitance of an access line coupled with a plurality of memory cells. The capacitance of the access line may be filtered by an inductive region, which could be implemented in one or more individual signal paths. Thus a signal may be transmitted to one or more selected memory cells and the inductive region may alter a capacitance of the access line in response to receiving a reflection of the signal from an unselected memory cell. In some examples, the transmitted signal may be modulated using pulse amplitude modulation (PAM), where the signal may be modulated using a modulation scheme that includes at least three levels to encode more than one bit of information (e.g., PAM4).

Abstract: The present disclosure relates to a microelectronics package with a self-aligned stacked-die assembly and a process for making the same. The disclosed microelectronics package includes a module substrate, a first die with a first coupling component, a second die with a second coupling component, and a first mold compound. The first die is attached to the module substrate. The first mold compound resides over the module substrate, surrounds the first die, and extends above an upper surface of the first die to define a first opening. Herein, the first mold compound provides vertical walls of the first opening, which are aligned with edges of the first die in X-direction and Y-direction. The second die is stacked with the first die and in the first opening, such that the second coupling component is mirrored to the first coupling component.

Abstract: An apparatus includes a first substrate having a first land and a second substrate having a second land. A first molding compound is disposed between the first substrate and the second substrate. A first semiconductor chip is disposed on the first substrate and in contact with the first molding portion. A first connector contacts the first land and a second connector contacts the second land. The second connector is disposed on the first connector. A volume of the second connector is greater than a volume of the first connector. A surface of the first semiconductor chip is exposed. The first molding compound is in contact with the second connector, and at least a portion of the second connector is surrounded by the first molding compound.

Abstract: A package structure including first and second packages is provided. The first package includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, and a plurality of conductive wire segments. The semiconductor die has an active surface and a back surface. The insulating encapsulant encapsulates the semiconductor die. The first redistribution layer is disposed on the back surface of the semiconductor die and a bottom surface of the insulating encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The second redistribution layer is disposed on the active surface of the semiconductor die. The plurality of conductive wire segments electrically connects the semiconductor die to the second redistribution layer and the first redistribution layer to the second redistribution layer. The second package is stacked on the second surface of the first redistribution layer over the first package.