Abstract: A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

Abstract: This invention discloses an electronic package for containing a vertical semiconductor chip that includes a laminated board having a via connector and conductive traces distributed on multiple layers of the laminated board connected to the via connector. The semiconductor chip having at least one electrode connected to the conductive traces for electrically connected to the conductive traces at a different layer on the laminated board and the via connector dissipating heat generated from the vertical semiconductor. A ball grid array (BGA) connected to the via connector functioning as contact at a bottom surface of the package for mounting on electrical terminals disposed on a printed circuit board (PCB) wherein the laminated board having a thermal expansion coefficient in substantially a same range the PCB whereby the BGA having a reliable electrical contact with the electrical terminals.

Abstract: A light emitting apparatus includes a blue light emitting diode (LED), a first and second phosphor layers. The second phosphor layer is between the blue LED and the first phosphor layer. When a blue beam of a shorter wavelength excites the phosphor layers, the excitation efficiency of the first phosphor layer is greater than that of the second phosphor layer. When a blue beam of a longer wavelength excites the phosphor layers, the excitation efficiency of the first phosphor layer is less than that of the second phosphor layer. Moreover, the wavelength of the peak intensity of the light beam from the first phosphor layer is shorter than that of the second phosphor layer. And, the dividing value between the shorter wavelength and the longer wavelength is within the range from a first wavelength to a second wavelength.

Abstract: An improved Wafer-Level Chip-Scale Packaging (WLCSP) process is described that includes forming a plurality of conductive pillars on a first surface of a semiconductor wafer. One or more grooves are dry etched into the first surface of the semiconductor wafer, where the grooves define at least one boundary between each of a plurality of die within the semiconductor wafer. A layer of encapsulating material is deposited over the first surface. A recess is then cut in each of the grooves through the encapsulating material, where the cutting leaves a piece of semiconductor material on the second surface of the semiconductor wafer. The second surface is then ground to remove the piece of semiconductor material, where the removal of this material separates the plurality of die.

Abstract: A stacked type chip package structure including a lead frame, a chip package, a second chip, and a second molding compound is provided. The lead frame includes a plurality of first leads and second leads insulated from one another. The first leads have a first upper surface, and the second leads have a second upper surface which is not co-planar with the first upper surface. The chip package is disposed on the first leads and includes a substrate, a first chip, and a first molding compound. The second chip is stacked on the chip package and electrically connected to the second leads. The second molding compound is disposed on the lead frame and filled among the first leads and the second leads for encapsulating the chip package and the second chip.

Abstract: The present invention include a semiconductor device and a method therefore, the method includes disposing a sheet-shaped resin at a side opposite to the chip mounting portion mounting semiconductor chips to be mounted on the chip mounting portion, and forming a resin sealing portion between the sheet-shaped resin and the chip mounting portion, to seal the semiconductor chips. According to an aspect of the present invention, it is possible to provide a semiconductor device and a fabrication method therefore, by which it is possible to reduce the size of the package and to prevent the generation of an unfilled portion in a resin sealing portion or a filler-removed portion or to prevent the exposure of wire from the resin sealing portion.

Abstract: An electronic package for containing at least a top packaging module vertically stacked on a bottom packaging module. Each of the packaging modules includes a semiconductor chip packaged and connected by via connectors and connectors disposed on a laminated board fabricated with a standard printed-circuit board process wherein the top and bottom packaging module further configured as a surface mountable modules for conveniently stacking and mounting to prearranged electrical contacts without using a leadframe. At least one of the top and bottom packaging modules is a multi-chip module (MCM) containing at least two semiconductor chips. At least one of the top and bottom packaging modules includes a ball grid array (BGA) for surface mounting onto the prearranged electrical contacts. At least one of the top and bottom packaging modules includes a plurality of solder bumps on one of the semiconductor chips for surface mounting onto the prearranged electrical contacts.

Abstract: A tamper resistant semiconductor package includes a surface having flip chip electrical contacts. A flip chip semiconductor of the package also has flip chip electrical contacts. The flip chip semiconductor has a maximum temperature to which it can be exposed before being damaged. Flip chip solder joints physically couple and electrically connect the flip chip electrical contacts of the flip chip semiconductor to the flip chip electrical contacts of the surface. The flip chip solder joints are formed of an alloy having a higher melting point than the maximum temperature such that removal of the flip chip semiconductor from the surface by heating will destroy the functionality of the flip chip semiconductor.

Abstract: A method for making micro-electromechanical system devices includes: (a) forming a sacrificial layer on a device wafer; (b) forming a plurality of loop-shaped through-holes in the sacrificial layer so as to form the sacrificial layer into a plurality of enclosed portions; (c) forming a plurality of cover caps on the sacrificial layer such that the cover caps respectively enclose the enclosed portions of the sacrificial layer; (d) forming a device through-hole in each of active units of the device wafer so as to form an active part suspended in each of the active units; and (e) removing the enclosed portions of the sacrificial layer through the device through-holes in the active units of the device wafer.

Abstract: An electronic device includes a package substrate made of an insulator, a device chip that is flip-chip mounted on the package substrate, and a seal portion sealing the device chip. The seal portion includes sidewalls made of solder. The whole seal portion including the sidewalls may be made of solder. The electronic device may include a metal layer provided on the seal portion.

Abstract: One aspect of the invention pertains to a semiconductor package suitable for use in high stress environments, such as ones involving high pressures, temperatures and/or corrosive substances. In this aspect, a die and leadframe are fully encapsulated in a first plastic casing. The first plastic casing is fully encapsulated in turn with a second plastic casing. The two casings have different compositions. The first plastic casing, for example, may be made of a thermoset plastic material and the second plastic casing may be made of a thermoplastic material. The first plastic casing may have recesses, indentations and/or slots suitable for securing it to the second plastic casing. In some embodiments, a corrosion resistant coating is added to the second plastic casing. Methods for forming semiconductor packages suitable for use in high stress environments are also described.

Abstract: Provided are a semiconductor package and a method for forming the same, and a PCB (printed circuit board). The semiconductor package comprises: a PCB including a slit at a substantially central portion thereof, the PCB including an upper surface and a lower surface; a semiconductor chip mounted on the upper surface of the PCB; an upper molding layer disposed on the upper surface and covering the semiconductor chip; and a lower molding layer filling the slit and covering a portion of the lower surface of the PCB, wherein the PCB comprises a connecting recess at a side surface thereof, and the upper molding layer and the lower molding layer are in contact with each other at the connecting recess.

Abstract: There are provided the steps of connecting a chip component 13 to a first substrate 10 through a wire 14, providing an electrode 21 on a second substrate 20, attaching, to the first substrate 10, a molding tool 30 having a protruded portion 31 formed corresponding to an array of a bump connecting pad 12 of the first substrate 10 and a cavity 32 formed corresponding to a region in which the chip component 13 is mounted, thereby forming a first sealing resin 34 for sealing the chip component 13 and the wire 14, bonding the electrode 21 to the bump connecting pad 12 through a solder, thereby bonding the first substrate 10 to the second substrate 20, and filling a second filling resin 40 in a clearance portion between the first substrate 10 and the second substrate 20.

Abstract: A light emitting diode (10) includes an LED chip (14) and an encapsulant (16) enclosing the LED chip. The LED chip has a light emitting surface (141), and the encapsulant has a light output surface (161) over the light emitting surface. The light output surface defines a plurality of annular, concentric grooves (163). Each groove is cooperatively enclosed by a first groove wall (165) and a second groove wall (166). The first groove wall is a portion of a circumferential side surface of a cone, and a conical tip of the cone is located on the light emitting surface of the LED chip.

Abstract: The present invention provides a resin sheet for encapsulating an optical semiconductor element, the resin sheet containing an encapsulation resin layer, an adhesive resin layer, a metal layer and a protective resin layer, in which the encapsulation resin layer and the metal layer adhered onto the adhesive resin layer are disposed adjacently to each other, the protective resin layer is laminated on the encapsulation resin layer and the metal layer so as to cover both the encapsulation resin layer and the metal layer, and the encapsulation resin layer has a taper shape expanding toward the protective resin layer; and an optical semiconductor device containing an optical semiconductor element encapsulated by using the resin sheet. The optical semiconductor element encapsulation resin sheet of the invention can be suitably used for back lights of liquid crystal screens, traffic signals, large-sized outdoor displays, billboards and the like.

Abstract: A semiconductor device includes semiconductor device components embedded in plastic package compound, with a buffer layer being arranged on surfaces of the semiconductor device components of the semiconductor device. The buffer layer includes a thermoplastic material.

Abstract: A microfluidic component having at least one first polymer layer, which is provided with a microstructure for at least one fluid, and having at least one second polymer layer. It is provided that at least one semiconductor component is situated on the first and/or the second polymer layer. Furthermore, a manufacturing method for such a microfluidic component is described.

Abstract: A semiconductor device has a semiconductor chip bonded to external connection pads or external connection terminals by flip-chip bonding and an underfill resin, and provides a semiconductor device which enables to lessen the warpage attributable to the underfill without involvement of an increase in the size of the semiconductor device. A low elastic resin member is disposed opposite to a surface of a semiconductor chip on which a plurality of electrode pads are formed, and an underfill resin is filled between the semiconductor chip and the low elastic resin member and between electrode pads and external connection pads.

Abstract: A dicing die attachment film includes a die attachment layer attached to one surface of a semiconductor wafer; a dicing film layer attached to a dicing die that is used for cutting the semi-conductor wafer into die units; and an intermediate layer laminated between the die attachment layer and the dicing film layer. The intermediate layer has a modulus of 100 to 3000 MPa, which is greater than a modulus of the die attachment layer and the dicing film layer.

Abstract: A semiconductor package includes a substrate having a plurality of connection pads and a plurality of ball lands; a semiconductor chip attached to one surface of the substrate and having a plurality of bonding pads that are connected to the respective connection pads of the substrate; a first molding structure covering an upper surface of the substrate including a connection region between the bonding pads and the connection pads and the semiconductor chip; a second molding structure formed adjacent to an edge of the lower surface of the substrate; and a plurality of solder balls attached to the respective ball lands of the substrate.

Abstract: A multi-chip package system is provided including providing a first carrier having a first integrated circuit die thereover, providing a second carrier, placing the first carrier coplanar with the second carrier, and molding a package encapsulation around and exposing the first carrier.

Abstract: An integrated circuit underfill package system including providing a substrate having a dispense port, attaching a first integrated circuit die on the substrate, and supplying an underfill to the dispense port when the substrate and the first integrated circuit die are inverted.

Abstract: A semiconductor device production method which includes steps of: preparing a wafer on which multiple integrated circuits are formed on a principal face; forming a rewiring which is electrically connected to the integrated circuits via a pad electrode; and dicing the wafer after forming an electrode terminal on the rewiring, including steps of: forming a first resin layer by sealing at least the rewiring and the electrode terminal formed on the principal face of the wafer with a first resin; processing a first dicing from a back face of the wafer to the principal face of the wafer or halfway to the first resin layer when the first resin layer is formed; forming a second resin layer by sealing a cut line outlined upon the first dicing and the back face of the wafer continuously with a first resin; and processing a second dicing while leaving the second resin layer which covers a side face outlined upon the first dicing.

Abstract: A method of manufacturing a semiconductor device and a semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate—such that the second opposite surface includes an area without solder balls. At least one second semiconductor element is mounted to the base plate at the area of the second surface without solder balls. The at least one semiconductor element may be mounted to the base plate using low molecular adhesive, or in the alternative, high temperature solder.

Abstract: A microelectronic device includes a die having an active surface and a non-active surface. To assemble the microelectronic device, the active surface of the die is placed on a substrate. A first material is dispensed between the active surface of the die and the substrate. A second material is dispensed on at least a portion of the non-active surface of the die. The second material is different than the first material and the first material and the second material are simultaneously cured.

Abstract: A chip is bonded on a circuit board by aligning in position bumps with board electrodes with interposition of an anisotropic conductive layer between the chip and the circuit board. The anisotropic conductive layer is a mixture of an insulating resin, conductive particles and an inorganic filler. The chip is pressed against the board with a pressure force of not smaller than 20 gf per bump by virtue of a tool, while warp of the chip and the board is connected, the bumps are compressed, and the insulating resin is hardened.

Abstract: Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.

Abstract: A semiconductor device includes a lower substrate having at least one wiring pattern formed of a plurality of wirings, a semiconductor chip positioned above the lower substrate and electrically connected to the wirings, an intermediate member which seals the semiconductor chip in columnar form and substantially, and an upper plate which substantially covers a whole upper surface of the intermediate member. A thermal expansion coefficient of the upper plate and a thermal expansion coefficient of the lower substrate are set substantially identical.

Abstract: An IC package mainly includes a substrate having slot(s), a chip, a protective encapsulant, a stiffening encapsulant, and a plurality of external terminals. The Young's modulus of the stiffening encapsulant is greater than the one of the protective encapsulant and the curing shrinkage of the stiffening encapsulant is smaller than the one of the protective encapsulant. The protective encapsulant is formed on one of the surfaces of the substrate for encapsulating the chip. The stiffening encapsulant protrudes from the other surface of the substrate where the external terminals are disposed. Moreover, the stiffening encapsulant is formed inside the slot and is contacted with the chip. Since the stiffening encapsulant is embedded and formed inside the slot, therefore, the contact area of the stiffening encapsulant with the substrate is increased to enhance the warpage resistance of the IC package.

Abstract: A dynamic quantity sensor includes a sensor chip having a movable portion at one surface side thereof and a silicon layer at another surface side thereof. The movable portion is displaced under application of a dynamic quantity. The silicon layer is separated from the movable portion through an insulator. The dynamic quantity sensor also includes a circuit chip for transmitting/receiving electrical signals to/from the sensor chip. The circuit chip is disposed to confront the one surface of the sensor chip through a gap portion and cover the movable portion. The sensor chip and the circuit chip are bonded to each other around the gap portion so that a bonding portion is formed to substantially surround the gap portion and thereby seal the gap portion.

Abstract: At least one film composite is laminated on a surface of at least one electrical component. The film composite includes at least one electrically-conducting plastic film with at least one electrically conducting conductor. The electrically-conducting plastic film has a high-ohmic resistance. This method may be used in planar large-surface electrical contacting technology for the production of modules with power semiconductors, where an electrical contacting of the components is achieved by the plastic films. A low lateral electrical conductivity is achieved, such that an electrical charging of the plastic films required for the contacting technology is prevented on operation of the component or the module.

Abstract: There is provided a semiconductor apparatus which includes a substrate, a semiconductor chip mounted above the substrate, a first resin filled between the substrate and the semiconductor chip, and a second resin formed on the substrate and extending from a side surface of the semiconductor chip toward an outer edge of the substrate. The second resin extends from an intersection of an extension of the side surface of the semiconductor chip and the substrate toward the outer edge of the substrate so that a first stress generated on a contact surface between the first resin and the semiconductor chip and a second stress generated on a contact surface between the first resin or the second resin and the substrate balance out each other.

Abstract: A semiconductor device for radio frequencies of more than 10 GHz having a semiconductor chip is disclosed. In one embodiment, the semiconductor chip, on its active top side, having a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage. In one embodiment, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip is directly embedded in a plastic housing composition, the plastic housing composition is arranged such that it is spaced apart from the radio-frequency region on the active top side of the semiconductor chip.

Abstract: A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.

Abstract: A micro structure includes a seed electrode layer on a substrate and a plurality of conductive layers on the seed electrode layer. The combined thickness of the seed electrode layer and the plurality of conductive layers can be more than 0.1 mm and the lateral dimensions of the seed electrode layer and the plurality of conductive layers vary less than 20% along the direction normal to a surface of the substrate and the micro structure has striations on an outer surface.

Abstract: Aiming at providing a semiconductor device advanced in performance of transistors, and improved in reliability, a semiconductor device of the present invention has a semiconductor element, a frame component provided over the semiconductor element, while forming a cavity therein, and a molding resin layer covering around the frame component, wherein the frame component is composed of a plurality of resin films (a first resin film and a second resin film) containing the same resin, and the cavity allows the active region of the semiconductor element to expose therein.

Abstract: A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles ?1, ?2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL).

Abstract: A semiconductor component includes a semiconductor chip provided with a passivation layer that covers the topmost interconnect structure of the semiconductor chip whilst leaving contact areas free. The passivation layer is in direct adhesive contact with the plastic housing composition of the semiconductor component. The passivation layer includes a polymer with embedded mineral-ceramic nanoparticles.

Abstract: A chip package structure comprises a carrier, a chip and an underfill. The chip has an active surface on which a plurality of bumps is formed. The chip is flip-chip bonded onto the carrier with the active surface facing the carrier, and is electrically connected to the carrier through the bumps. The underfill is filled between the chip and the carrier. A portion of the underfill near the chip serves as a first underfill portion. The portion of the underfill near the carrier serves as a second underfill portion. The Young's modulus of the first underfill portion is smaller than the Young's modulus of the second underfill portion. The second underfill portion can be optionally replaced with a selected encapsulation. The selected encapsulation covers the chip and the carrier around the chip.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a device includes a support member and a flexed microelectronic die mounted to the support member. The flexed microelectronic die has a plurality of terminals electrically coupled to the support member and an integrated circuit operably coupled to the terminals. The die can be a processor, memory, imager, or other suitable die. The support member can be a lead frame, a plurality of electrically conductive leads, and/or an interposer substrate.

Abstract: An integrated circuit package system includes providing a leadframe, forming an aperture within the leadframe, mounting an integrated circuit package over or under the aperture, and mounting a die over the integrated circuit package with the die located within the aperture.

Abstract: A method for fabricating an interposer includes: forming on one primary surface of a first substrate a thin-film capacitor including a first capacitor electrode, a crystalline capacitor dielectric film formed on the first electrode and a second capacitor electrode formed on the dielectric film; and forming on the primary surface of the first substrate and the capacitor a first layer as semi-cured, and a first partial electrode to be a part of a through-electrode, buried in the first resin layer and electrically connected to the first electrode or the second electrode.

Abstract: A semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate such that the second opposite surface includes an area without solder balls. At least one second semiconductor element is mounted to the base plate at the area of the second surface without solder balls. The at least one semiconductor element may be mounted to the base plate using solder joints.

Abstract: A stencil and method for depositing a coupon of underfill material onto a substrate that is to receive an integrated circuit die.

Abstract: A module having multiple die includes a first package (such as a land grid array package) inverted and mounted upon a lower substrate, and one or more die mounted or stacked over the upward-facing side of the inverted package.

Abstract: A module with a built-in component is produced by disposing a cavity on a mounting surface side of a ceramic multilayer substrate, storing a circuit component therein and, thereafter, performing resin molding. A second resin portion is disposed on the mounting surface side of the ceramic multilayer substrate so as to continuously cover a frame-shaped portion and a first resin portion molded. External terminal electrodes are disposed on an outer surface of the second resin portion.

Abstract: The present invention include a semiconductor device and a method therefor, the method includes disposing a sheet-shaped resin at a side opposite to the chip mounting portion mounting semiconductor chips to be mounted on the chip mounting portion, and forming a resin sealing portion between the sheet-shaped resin and the chip mounting portion, to seal the semiconductor chips. According to an aspect of the present invention, it is possible to provide a semiconductor device and a fabrication method therefor, by which it is possible to reduce the size of the package and to prevent the generation of an unfilled portion in a resin sealing portion or a filler-removed portion or to prevent the exposure of wire from the resin sealing portion.

Abstract: A method is provided to produce a hermetic encapsulation for an electronic component, which may be an optical and at least partially light-permeable component or a surface wave component, comprises attaching and electrically contacting a component based on a chip to a carrier comprising electrical connection surfaces, such that a front of the chip bearing component structures facing the carrier is arranged to clear it, covering a back of the chip with a film made of synthetic material, such that edges of the film overlap the chip; tightly bonding the film and carrier in an entire edge region around the chip; structuring the film such that the film is removed around the edge region in a continuous strip parallel to the edge region; and applying a hermetically sealing layer over the film, such that this layer hermetically terminates with the carrier in a contact region outside of the edge region.

Abstract: A module with embedded semiconductor IC of the present invention includes a first resin layer, a second resin layer, post electrodes passing through the first and second resin layers, and a semiconductor IC mounted as embedded between the first resin layer and the second resin layer. Stud bumps are formed on land electrodes of the semiconductor IC and positioned with respect to the post electrodes. Owing to this positioning of the stud bumps formed on the semiconductor IC with respect to the post electrodes, the planar position of the stud bumps is substantially fixed. As a result, it is possible to use a semiconductor IC having a very narrow electrode pitch of 100 ?m or smaller, particularly of around 60 ?m.

Abstract: A method for manufacturing a wire sweep resistant semiconductor package provides a die attached to an interposer. The die is electrically connected to the interposer with conductive wires. A sealant is applied on the die at the conductive wires for preventing wire sweep and the sealant is free of contact with the interposer. The die, the interposer, the conductive wires, and the sealant are encapsulated in an encapsulant.