Abstract: Mold pieces (105 and 110) for molding a layer of mold compound on the interconnect side of a bumped semiconductor wafer (118) include a primary cavity (117) and secondary cavities (120) into which excess mold compound from the primary cavity (117) flows. The secondary cavities (120) include a plunger (130) that asserts a predetermined backpressure that is equal to a desired mold compound pressure on the mold compound during molding. As most of the excess mold compound in the primary cavity (117) is forced to flow into the secondary cavities (120), this advantageously leaves a relatively thin layer of mold compound on the semiconductor wafer (118), which can then be removed, for example by grinding in a relatively short time. Mold piece (105) further comprises a movable cavity bar (115) that can be moved away from mold piece (105) after molding and be cooled to detach the molded substrate that adheres to the cavity bar.

Abstract: The invention provides a primer composition which adheres a substrate mounting an optical semiconductor device and a cured material of an addition reaction curing silicone composition that encapsulates the optical semiconductor device, includes (A) silazane compound or polysilazane compounds that has one or more silazane bonds in the molecule, (B) acrylic resin containing either one or both of acrylate ester and methacrylate ester that contains one or more SiH groups in the molecule, and (C) solvent. There can be provided a primer composition in which the adhesion between a substrate mounting an optical semiconductor device and a cured material of an addition reaction curing silicone composition that encapsulates the optical semiconductor device can be improved, the corrosion of a metal electrode on the substrate can be prevented, and the heat resistance and flexibility of a primer can be improved.

Abstract: The present invention relates to a blend comprising; a) at least one polymer or copolymer or a mixture of a plurality of polymers and/or copolymers which contain a main chain and a side chain, where at least one side chain contains a structural unit of the following formula (I), the symbols and indices used here are as defined below; b) at least one host molecule which has electron- or hole-transporting functionality, and c) at least one emitter molecule.

Abstract: A curable organopolysiloxane composition can be used as a sealant or a bonding agent for optical semiconductor elements. The composition comprises at least the following components: (A) a multi-constituent, alkenyl-containing organopolysiloxane; (B) an organopolysiloxane that contains silicon-bonded hydrogen atoms and comprises constituent (B-1) containing at least 0.5 wt. % of silicon-bonded hydrogen atoms and constituent (B-2) containing at least 0.5 wt. % of silicon-bonded hydrogen atoms, and, if necessary, constituent (B-3), an organopolysiloxane; and (C) a hydrosilylation-reaction catalyst. The composition can form a cured body that possesses long-lasting properties of light transmittance and bondability, and relatively high hardness.

Abstract: Provided is a photosensitive adhesive composition comprising (A) an alkali-soluble polyimide having particular structural unit(s) and having a particular structure at at least one end of the main chain, (B) a glycidylamine type epoxy compound of a particular structure, (C) a photopolymerizable compound, and (D) a photoinitiator, wherein (A) the alkali-soluble polyimide has a glass transition temperature of 160° C. or higher. The photosensitive adhesive composition has the ability to form patterns with an alkaline developer, excellent thermocompressibility at a low temperature to an irregular substrate after exposure, and a high adhesive strength even at a high temperature.

Abstract: The invention provides an encapsulant equipped with the supporting substrate which is an encapsulant for collectively encapsulating a semiconductor devices mounting surface of a substrate having semiconductor devices mounting thereon or a semiconductor devices forming surface of a wafer having semiconductor devices forming thereon, and the encapsulant equipped with the supporting substrate comprises a supporting substrate having a difference of a linear expansion coefficient from that of the substrate or the wafer of 5 ppm or less and a thermosetting resin layer being laminated, wherein the thermosetting resin layer has a shape having a height difference to a thickness direction.

Abstract: The present invention relates to a process for the production of solar cells comprising a selective emitter using an improved etching-paste composition which has significantly improved selectivity for silicon layers.

Abstract: An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.

Abstract: The present invention has a purpose of providing an epoxy composition for encapsulating an optical semiconductor element which composition provides a cured product having a low gas permeability and excellent curability in a form of a thin film together with good light transmission and crack resistance. The present invention provides a composition comprising (A) a silicone-modified epoxy compound represented by the formula (1), (B) a curing agent and (C) a polyhydric alcohol. The present invention further provides a composition comprising a composition prepared by reacting (A) the silicone-modified epoxy compound, (B) the curing agent and (C) the polyhydric alcohol and (D) a curing catalyst, and a cured product thereof.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A silicone resin is provided. The silicone resin may be effectively used to encapsulate a semiconductor element, for example, a light-emitting element of a light-emitting diode.

Abstract: Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions comprise a mixture of two silicone polymers, a catalyst, and an inhibitor for the catalyst. The preferred catalyst comprises platinum. Unlike prior art silicone systems, the inventive composition can be provided in a one-part form due to a substantially improved pot life. The compositions can be spin- or spray-applied, followed by baking to crosslink the polymers and form a cured layer. The inventive cured layers have high refractive indices and light transmissions.

Abstract: Provided is a curable composition and its use. The curable composition may exhibit excellent processibility and workability. The curable composition has excellent light extraction efficiency, crack resistance, hardness, thermal and shock resistance and an adhesive property after curing. The curable composition may provide a cured product exhibiting stable durability and reliability under severe conditions for a long time and having no whitening and surface stickiness.

Abstract: The present invention provides a new type wireless chip that can be used without being fixed on a product. Specifically, a wireless chip can have a new function by a sealing step. One feature of a wireless chip according to the present invention is to have a structure in which an integrated circuit is sealed by films. In particular, the films sealing the integrated circuit have a hollow structure; therefore the wireless chip can have a new function.

Abstract: The present invention is aimed to provide an adhesive for bonding a semiconductor which has high transparency and facilitates recognition of a pattern or position indication on the occasion of semiconductor chip bonding. The present invention is an adhesive for bonding a semiconductor containing: an epoxy resin; an inorganic filler; and a curing agent, wherein the amount of the inorganic filler in the adhesive is 30 to 70% by weight, the inorganic filler contains a filler A having an average particle size of less than 0.1 ?m and a filler B having an average particle size of not less than 0.1 ?m and less than 1 ?m, and the weight ratio of the filler A to the filler B is 1/9 to 6/4. The present invention is an adhesive for bonding a semiconductor containing: an epoxy resin; an inorganic filler; and a curing agent, wherein difference in refractive index is not more than 0.1 between the epoxy resin and the inorganic filler.

Abstract: A semiconductor device includes a package substrate having a front surface and a backside surface; an electrode pad formed on the front surface; an outer connection pad formed on the backside surface and electrically connected to the electrode pad; a semiconductor chip mounted on the front surface and having an electrode electrically connected to the electrode pad; a sealing resin layer having a through hole formed with a die-molding and reaching the electrode pad for sealing the semiconductor chip; and a through electrode filled in the through hole with a conductive material and having one end portion electrically connected to the electrode pad and the other end portion exposed from the sealing resin layer.

Abstract: An embodiment is directed to a polysiloxane having a moiety represented by the following Chemical Formula 1: *—Si-AR—Si—*??[Chemical Formula 1] wherein, in the Chemical Formula 1, AR is or includes a substituted or unsubstituted C6 to C30 arylene group.

Abstract: A semiconductor device includes a carrier and a first chip attached to the carrier. The semiconductor device includes a sintered insulation material over at least a portion of the carrier and the first chip.

Abstract: A resin composition containing a silica-based filler which differs in refractive index by ±0.03 from the curable base resin and has a thermal conductivity no lower than 0.5 W/m·K, and a light-emitting diode encapsulated with said resin composition. The resin composition is preferably prepared from a curable silicone resin which imparts a cured product having a refractive index of 1.45 to 1.55 and cristobalite powder dispersed therein.

Abstract: A process for fabricating an electronic component includes a liquid injection molding method for overmolding a semiconductor device. The liquid injection molding method includes: i) placing the semiconductor device in an open mold, ii) closing the mold to form a mold cavity, iii) heating the mold cavity, iv) injection molding a curable liquid into the mold cavity to overmold the semiconductor device, v) opening the mold and removing the product of step iv), and optionally vi) post-curing the product of step v). The semiconductor device may have an integrated circuit attached to a substrate through a die attach adhesive.

Abstract: The present invention provides an epoxy resin composition for sealing that demonstrates favorable adhesion to a copper lead frame in which oxidation has progressed and has superior mold release and continuous moldability. The epoxy resin composition for sealing includes (A) an epoxy resin, (B) a phenolic resin-based curing agent, (C) an inorganic filler, and (D) a curing accelerator. The curing accelerator (D) has an average particle diameter of 10 ?m or less, and the ratio of particles having a particle diameter in excess of 20 ?m is 1% by weight or less. Also, the curing accelerator (D) includes at least one type of curing accelerator selected from the group consisting of a phosphobetaine compound having a specific structure; adduct of a phosphine compound having a specific structure, and quinone compound; and an adduct of a phosphonium compound having a specific structure, and a silane compound.

Abstract: A curable silicone resin composition is provided comprising (A) a linear organopolysiloxane having at least two aliphatic unsaturated radicals and optionally, an organopolysiloxane of branched or three-dimensional network structure, (B) an organohydrogenpolysiloxane having at least two SiH radicals and free of aliphatic unsaturation, (C) a hydrosilylation catalyst, and (D) silicone powder having an average particle size of 0.5-100 ?m. The composition is suitable for LED encapsulation.

Abstract: A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.

Abstract: A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

Abstract: An electronic device module comprising: A. At least one electronic device, e.g., a solar cell, and B. A polymeric material in intimate contact with at least one surface of the electronic device, the polymeric material comprising (1) an ethylene interpolymer comprising an overall polymer density of not more than 0.905 g/cm3; total unsaturation of not more than 125 per 100,000 carbons; up to 3 long chain branches/1000 carbons; vinyl-3 content of less than 5 per 100,000 carbons; and a total number of vinyl groups/1000 carbons of less than the quantity (8000/Mn), wherein the vinyl-3 content and vinyl group measurements are measured by gel permeation chromatography (145° C.) and 1H-NMR (125° C.), (2) grafted vinyl silane, (3) optionally, free radical initiator or a photoinitiator in an amount of at least about 0.05 wt % based on the weight of the copolymer, and (3) optionally, a co-agent in an amount of at least about 0.05 wt % based upon the weight of the copolymer.

Abstract: Disclosed is a resin composition for encapsulating a semiconductor containing a curing agent, an epoxy resin (B) and an inorganic filler (C), wherein the curing agent is a phenol resin (A) having a predetermined structure. Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Abstract: A method is proposed for coating an optoelectronic chip-on-board module including a flat substrate populated with one or more optoelectronic components having at least one primary optical arrangement and optionally at least one secondary optical arrangement.

Abstract: A silicone resin is provided. The silicone resin may be effectively used to encapsulate a semiconductor element, for example, a light-emitting element of a light-emitting diode.

Abstract: An electronic component incorporation substrate and a method for manufacturing the same that provide a high degree of freedom for selecting materials. An electronic component incorporation substrate includes a first structure, which has a substrate and an electronic component. The substrate includes a substrate body having first and second surfaces. A first wiring pattern is formed on the first surface and electrically connected to a second wiring pattern formed on the second surface through a through via. The electronic component is electrically connected to the first wiring pattern. The electronic component incorporation substrate includes a sealing resin, which seals the first structure, and a third wiring pattern, which is connected to the second wiring pattern through a second via.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A silicone resin composition that exhibits low gas permeability and is suitable for encapsulating optical semiconductors. The composition includes: (A) an organopolysiloxane having a specific structure containing two or more alkenyl groups, (B) an organohydrogenpolysiloxane composed of two organohydrogenpolysiloxanes having specific structures, in which the mass ratio between the two organohydrogenpolysiloxanes is within a range from 10:90 to 90:10, in an amount that provides 0.4 to 4.0 mols of silicon atom-bonded hydrogen atoms within the component (B) per 1 mol of alkenyl groups within the component (A), and (C) an addition reaction catalyst.

Abstract: In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.

Abstract: The object of the present invention is to provide an organic-inorganic hybrid material having heat resistance, and said object of the present invention can be attained by providing an organic-inorganic hybrid prepolymer containing a phenyl group which is prepared by the polycondensation reaction accompanying dehydration between a polydimethylsiloxane and a metal and/or semimetal alkoxide, wherein (a) phenyl group(s) is (are) partially or wholly introduced into said polydimethylsiloxane and/or said metal and/or semimetal alkoxide.

Abstract: A method is provided for coating an optoelectronic chip-on-board module, including a flat substrate populated with one or more optoelectronic components, having a transparent, UV-resistant, and temperature-resistant coating made of one or more silicones. A corresponding optoelectronic chip-on-board module and a system having multiple optoelectronic chip-on-board modules are also provided. The method includes the following steps: a) preheating the substrate to be coated to a first temperature; b) applying on the preheated substrate a dam that encloses a surface area or partial area of the substrate to be coated, the dam being made of a first, heat-curable, highly reactive silicone that cures at the first temperature; c) filling the surface area or partial area of the substrate enclosed by the dam with a liquid second silicone; and d) curing the second silicone.

Abstract: The positive tone photosensitive composition of the invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound producing an acid by light, a thermal crosslinking agent and an acrylic resin. It is possible to provide a positive tone photosensitive composition that can be developed with an aqueous alkali solution, has sufficiently high sensitivity and resolution, and can form a resist pattern with excellent adhesiveness and thermal shock resistance.

Abstract: Semiconductor light emitting devices include an aluminum nitride substrate, a light emitting diode on a face of the substrate and flexible silicone film that includes a silicone lens on the face of the substrate. The light emitting diode emits light through the silicone lens.

Abstract: A curable organopolysiloxane composition that can be used as a sealant or a bonding agent for optical semiconductor elements and comprises at least the following components: (A) an alkenyl-containing organopolysiloxane that comprises constituent (A-1) of an average compositional formula and constituent (A-2) of an average compositional formula; (B) an organopolysiloxane that contains silicon-bonded hydrogen atoms and comprises a constituent (B-1) containing at least 0.5 wt. % of silicon-bonded hydrogen atoms and represented by an average molecular formula, constituent (B-2) containing at least 0.5 wt. % of silicon-bonded hydrogen atoms and represented by an average compositional formula, and, if necessary, constituent (B-3) of an average molecular formula; and (C) a hydrosilylation-reaction catalyst. The composition can form a cured body that possesses long-lasting properties of light transmittance and bondability, and relatively high hardness.

Abstract: A silicone resin composition contains a first organopolysiloxane having, in one molecule, both at least two ethylenically unsaturated hydrocarbon groups and at least two silanol groups; a second organopolysiloxane having, in one molecule, at least two hydrosilyl groups without having an ethylenically unsaturated hydrocarbon group; a hydrosilylation catalyst; and a hydrosilylation retarder.

Abstract: Provided is a photosensitive adhesive composition comprising (A) an alkali-soluble polyimide having particular structural unit(s) and having a particular structure at at least one end of the main chain, (B) a glycidylamine type epoxy compound of a particular structure, (C) a photopolymerizable compound, and (D) a photoinitiator, wherein (A) the alkali-soluble polyimide has a glass transition temperature of 160° C. or higher. The photosensitive adhesive composition has the ability to form patterns with an alkaline developer, excellent thermocompressibility at a low temperature to an irregular substrate after exposure, and a high adhesive strength even at a high temperature.

Abstract: A silicone resin composition contains a cage octasilsesquioxane having a group represented by the following formula (1), an alkenyl group-containing polysiloxane containing an alkenyl group having a number of moles larger than that of a hydrosilyl group in the cage octasilsesquioxane, a hydrosilylation catalyst, and an organohydrogenpolysiloxane. (where, in formula, R1 represents a monovalent hydrocarbon group selected from a saturated hydrocarbon group and an aromatic hydrocarbon group. R2 represents hydrogen or a monovalent hydrocarbon group selected from a saturated hydrocarbon group and an aromatic hydrocarbon group. The molar ratio of the monovalent hydrocarbon group:hydrogen in R2 in the cage octasilsesquioxane as a whole is, as an average value, in the range of 6.5:1.5 to 5.5:2.5.

Abstract: A nanocrystal composite that includes a matrix including semiconductor nanocrystals, and a barrier layer disposed on at least a portion of the surface of the matrix and including a polymer with low oxygen permeability, low moisture permeability, or both.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following ingredients A to E: A: an epoxy resin; B: a silicone mixture containing the following ingredients b1 and b2, with a weight ratio of the ingredients b1 and b2 being from 5/95 to 25/75 in terms of b1/b2: b1: a silicone compound having an amino group in both ends thereof and having a weight average molecular weight of from 600 to 900, and b2: a silicone compound having an amino group in both ends thereof and having a weight average molecular weight of from 10,000 to 20,000; C: a phenol resin; D: a curing accelerator; and E: an inorganic filler containing the following ingredients e1 and e2: e1: a crystalline silica, and e2: a fused silica.

Abstract: A curable organopolysiloxane composition and an optical semiconductor element sealant, each comprising (A) a diorganopolysiloxane that has at least 2 alkenyl groups wherein at least 70 mole % of all the siloxane units are methylphenylsiloxane units and the total content of 1,3,5-trimethyl-1,3,5-triphenylcyclotrisiloxane and 1,3,5,7-tetramethyl-1,3,5,7-tetraphenylcyclotetrasiloxane is no more than 5 weight %, (B) an organopolysiloxane that has at least 2 silicon-bonded hydrogen atoms wherein at least 15 mole % of the silicon-bonded organic groups are phenyl groups, and (C) a hydrosilylation reaction catalyst. An optical semiconductor device in which an optical semiconductor element within a housing is sealed with the cured product from the aforementioned composition.

Abstract: An electronic component, in which the outer perimeter portion of a component (2) is surrounded with a first sealing resin (4), a second sealing resin (3) is filled within the periphery of the first sealing resin (4), the component (2) and a board (1) are electrically connected by a wire (5), the edge, in the vicinity of which the wire (5) passes, of the outer perimeter edge portions of the component (2) is formed to be a chamfered oblique surface (31), and the wire (5) is provided to extend to the board (1) along the oblique surface (31). By this means, the overall height of the electronic component can be kept low.

Abstract: The present invention relates to a curable composition. A curable composition may be provided; which shows excellent processability and workability; which shows excellent light extraction efficiency, crack resistance, hardness, thermal shock resistance and adhesive strength after curing; and which has excellent reliability and long-term reliability under high-temperature and/or high-moisture conditions. Also, turbidity and surface stickiness may be prevented in the cured product.

Abstract: A silicone resin composition contains a first organopolysiloxane having, in one molecule, both at least two ethylenically unsaturated hydrocarbon groups and at least two hydrosilyl groups; a second organopolysiloxane having, in one molecule, at least two hydrosilyl groups without containing an ethylenically unsaturated hydrocarbon group; a hydrosilylation catalyst; and a hydrosilylation inhibitor.

Abstract: A light-emitting semiconductor device includes a lead frame having lead electrodes, a reflector arranged with the lead frame, and a light-emitting semiconductor chip accommodated in the reflector and having electrodes connected to the lead electrodes by a flip-chip bonding method, wherein: a gap between the lead frame and the light-emitting semiconductor chip is filled with a cured underfill material, and a cured silicon oxide film of 0.05 to 10 ?m thickness is formed covering surfaces of the light-emitting semiconductor chip and reflector.

Abstract: A semiconductor device according to the present invention includes a substrate, a semiconductor element which is mounted on the substrate, a protecting film which covers at least a part of the semiconductor element, and an encapsulation resin which encapsulates the semiconductor element and the protecting film, wherein between the protecting film and the encapsulation resin, there is at least one gap in which the protecting film does not stick to the encapsulation resin. According to the above mentioned configuration, it is possible to provide a semiconductor device having a superior stress-relief performance.

Abstract: The invention provides a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to a porous interlayer dielectric layer, and exhibit superior adherence with respect to an interconnection material. The composition for sealing a semiconductor contains a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000; contains sodium and potassium each in an amount based on element content of not more than 10 ppb by weight; and has a volume average particle diameter, measured by a dynamic light scattering method, of not more than 10 nm.

Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.