Abstract: A high-brightness LED module includes a substrate with a recess in which a light emitting element is mounted. The recess is defined by a sidewalls and a relatively thin membrane. At least two micro-vias are provided in the membrane and include conductive material that passes through the membrane. A p-contact of the light emitting element is coupled to a first micro-via and an n-contact of the light emitting element is coupled to a second micro-via.

Abstract: An electronically scannable multiplexing device is capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable conducting channel with two oppositely formed depletion regions. The depletion width of each depletion region is controlled by a voltage applied to a respective control gate at each end of the multiplexing device. The present multi-bit addressing technique allows, for example, 10 to 100 bits of data to be accessed or addressed at a single node. The present invention can also be used to build a programmable nanoscale logic array or for randomly accessing a nanoscale sensor array.

Abstract: Disclosed is a light-emitting diode with a semiconductor layer including dielectric material layer, and a manufacturing method thereof for increasing the external quantum efficiency. The semiconductor layer includes a non-flat structure having a plurality of recess regions, and at least one dielectric material layer disposed within each recess region, the dielectric material layer has a generally inverted pyramid shape or a ball shape, and a portion of the non-flat structure is exposed outside the dielectric material layer. Photons emitted from the active layer are scattered by the dielectric material layer as photon scattering structure, and are guided by the inclined internal side faces of the recess regions so that the probability of photons escaping from the light-emitting diode is increased, and thus total internal reflection is reduced, thereby increasing the extraction efficiency and hence the external quantum efficiency.

Abstract: A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

Abstract: A light emitting device comprises a flip-chip light emitting diode (LED) die mounted on a submount. The top surface of the submount has a reflective layer. Over the LED die is molded a hemispherical first transparent layer. A low index of refraction layer is then provided over the first transparent layer to provide TIR of phosphor light. A hemispherical phosphor layer is then provided over the low index layer. A lens is then molded over the phosphor layer. The reflection achieved by the reflective submount layer, combined with the TIR at the interface of the high index phosphor layer and the underlying low index layer, greatly improves the efficiency of the lamp. Other material may be used. The low index layer may be an air gap or a molded layer. Instead of a low index layer, a distributed Bragg reflector may be sputtered over the first transparent layer.

Abstract: According to one embodiment, a light emitting device includes a light emitting layer, a first electrode, a first and second layers, and a cladding layer. The first layer has a first impurity concentration of a first conductivity type, and allows a carrier to be diffused in the light emitting layer. The second layer has a second impurity concentration of the first conductivity type higher than the first impurity concentration, and includes a first and second surfaces. The first surface is with the first layer. The second surface has a formation region and a non-formation region of the first electrode. The non-formation region includes convex structures with an average pitch not more than a wavelength of the emission light. The cladding layer is provided between the first layer and the light emitting layer and has an impurity concentration of the first conductivity type.

Abstract: A light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first electrode including a plurality of openings may be provided on the light emitting structure. A filling factor, which is an area ratio of the first electrode relative to an area of a top surface of the light emitting structure, may be 20% or less.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Abstract: A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer.

Abstract: Electrically pixelated luminescent devices incorporating optical elements, methods for forming electrically pixelated luminescent devices incorporating optical elements, and systems including electrically pixelated luminescent devices incorporating optical elements are described.

Abstract: A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Abstract: One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.

Abstract: A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer over the support substrate, a second electrode layer, which includes a current blocking layer and a reflective current spreading layer, over the wafer bonding layer, a current injection layer over the second electrode layer, a superlattice structure layer over the current injection layer, a second conductive semiconductor layer over the superlattice structure layer, an active layer over the second conductive semiconductor layer, a first conductive semiconductor layer over the active layer, and a first electrode layer over the first conductive semiconductor layer.

Abstract: A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure.

Abstract: A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer has a bottom film covering the first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of the bottom film, and a top film formed on the bottom film to cover the second light-transmissive members.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.

Abstract: Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.

Abstract: A Group III nitride semiconductor light-emitting device includes a support, a p-electrode provided on the support, a p-type layer including a Group III nitride semiconductor and provided on the p-electrode, an active layer including a Group III nitride semiconductor and provided on the p-type layer, an n-type layer including a Group III nitride semiconductor and provided on the active layer, an n-electrode which is connected to the n-type layer, a first trench having a depth extending from a back surface of the p-type layer on a side of the p-electrode to reach the n-type layer, an auxiliary electrode which is in contact with a back surface of the n-type layer at a bottom of the first trench, but is not in contact with side walls of the first trench, and an insulating film which exhibits light permeability.

Abstract: A method of manufacturing light emitting diode packaging lens and packages made by using the method are disclosed in the present invention. By using electrophoretic deposition, one or more layers of phosphors are coated onto one surface of a cup which has a curved portion. The cup is used for the packaging lens. Thickness of phosphor layer can be controlled and distribution of phosphor particles is uniform. Therefore, light emitting diode packages with the lens can be a uniform light source.

Abstract: A light-emitting device includes a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type, a first electrode connected to the lower layer of the first conductivity type, a second electrode connected to the upper layer of the second conductivity type, and an optical member seeded in the light emitting structure. The optical member can include a plurality of particles substantially transparent and having a lower refractive index than the light emitting structure. A plurality of discontinuities are formed at the boundary of the optical member in the light emitting structure.

Abstract: A light-emitting diode (LED) light source module is described, comprising: a heat conduction substrate, wherein a surface of the heat conduction substrate includes a plurality of recesses; a plurality of light-emitting diode chips respectively disposed in the recesses; an insulation layer disposed on the surface of the heat conduction substrate outside of the recesses; an electric conduction layer disposed on the insulation layer, wherein the light-emitting diode chips are electrically connected to the electric conduction layer; and an encapsulation layer covering the light-emitting diode chips, the electric conduction layer and the insulation layer.

Abstract: A semiconductor optical device includes: a group III nitride semiconductor substrate having a primary surface of a first orientation; a first group III nitride semiconductor laminate including a first active layer disposed on a first region of the primary surface; a group III nitride semiconductor thin film having a surface, which has a second orientation different from the first orientation, disposed on a second region, the second region being different from the first region; a junction layer provided between the second region and the group III nitride semiconductor thin film; and a second group III nitride semiconductor laminate including a second active layer and disposed on the surface of the group III nitride semiconductor thin film. The first and second active layers include first and second well layers containing In, respectively, and the emission wavelengths of the first and second well layers are different from each other.

Abstract: Provided is a light emitting device. In one embodiment, the light emitting device includes: a first conductive type semiconductor layer including a plurality of grooves; an active layer formed on a upper surface of the first conductive type semiconductor layer and along the grooves; an anti-current leakage layer having a flat upper surface on the active layer; and a second conductive type semiconductor layer on the anti-current leakage layer.

Abstract: This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes an insulating base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.

Abstract: Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0?x1?1, 0?y1?1, and 0?x1+y1?1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0?y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3?1, 0?y3?1, and 0<x3+y3?1) formed on the first layer.

Abstract: Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer divided in plurality on the first conductive type semiconductor layer, and a second conductive type semiconductor layer divided in plurality on the active layer.

Abstract: The embodiment is to provide a light emitting device and a method for manufacturing the same, in which the light emitting device includes a first conductive semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a phosphor layer formed on the second conductive semiconductor layer; in which the phosphor layer includes a phosphor receiving member including a plurality of cavities and phosphor particles fixed in the cavities.

Abstract: A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions.

Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.

Abstract: A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed.

Abstract: Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate; growing one or more buffer layers on the substrate; growing one or more epitaxial layers on the one or more buffer layers; and applying one or more metal layers to the one or more epitaxial layers. Additionally, the steps of affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed.

Abstract: A projector includes: a light emitting device; a light modulation device adapted to modulate a light beam emitted from the light emitting device; and a projection device adapted to project the image formed by the light modulation device, wherein the light emitting device includes a light emitting element formed of a super luminescent diode, and adapted to emit light, and a base supporting the light emitting element with first and second reflecting surfaces to reflect the light emitted from the light emitting element. The light emitting element emits the light from first and second end surfaces. Directions of first and second outgoing light respectively emitted from the first and second end surfaces are opposite to each other. Directions of the first and second reflected light respectively reflected by the first and second reflecting surfaces are the same as each other.

Abstract: A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.

Abstract: A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 ?m. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.

Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.

Abstract: A light-emitting device comprises a substrate, at least one light-emitting structure configured to emit light beams and positioned on the substrate, and a ring-shaped photonic crystal structure positioned in the light-emitting structure. The ring-shaped photonic crystal structure includes a plurality of pillars positioned in the light-emitting structure and a plurality of ring-shaped openings surrounding the pillars. The distance between the ring-shaped openings is preferably between 0.2? and 10?, and ? represents the wavelength of the light beam.

Abstract: A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less than 1000 nm, and each AlGaN:Si intervening sublayer has a thickness less than 25 nm. The entire n-type layer is at least 2000 nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device.

Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Abstract: A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

Abstract: An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face which faces the LED, and the light-emergent face includes a first light-emergent face located opposite to the first light-incident face. The first light-emergent face is a continuously curved face which has a curvature firstly increasing gradually and then decreasing gradually along a bottom-to-top direction of the lens.

Abstract: A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).

Abstract: The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.

Abstract: The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal dissipation. Other improvements include an embedded zener diode to protect against harmful reverse bias voltages.

Abstract: One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

Abstract: A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

Abstract: A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.