Abstract: Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.

Abstract: The present invention discloses a fabrication method of light emitting diodes, which comprises the following steps: firstly, providing three sapphire wafers with each sapphire wafer having a substrate and an epitaxial layer; turning the sapphire wafers upside down and sticking an adhesive tape onto each epitaxial layer; attaching three sapphire wafers to a ceramic work piece; performing coarse grinding on the substrates with a machining table; performing fine grinding on the substrates with a polishing disc; removing the substrate completely with etching; unloading the remaining epitaxial layers and the adhesive tapes, and turning them upside down again, and stripping off the adhesive tapes; forming a conductor via joining the epitaxial layer with an electrically-conductive layer of a metal or another wafer. Thereby, the brightness of LED can be increased; the fabrication process can be accelerated; the yield can be promoted; and the cost can be reduced.