Conductor Layer Next To The Insulator Is Single Metal, E.g., Ta, W, Mo, Al (epo) Patents (Class 257/E21.202)
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Patent number: 7745278Abstract: A method of forming a CMOS structure, and the device produced therefrom, having improved threshold voltage and flatband voltage stability. The inventive method includes the steps of providing a semiconductor substrate having an nFET region and a pFET region; forming a dielectric stack atop the semiconductor substrate comprising an insulating interlayer atop a high k dielectric; removing the insulating interlayer from the nFET region without removing the insulating interlayer from the pFET region; and providing at least one gate stack in the pFET region and at least one gate stack in the nFET region. The insulating interlayer can be AlN or AlOxNy. The high k dielectric can be HfO2, hafnium silicate or hafnium silicon oxynitride. The insulating interlayer can be removed from the nFET region by a wet etch including a HCl/H2O2 peroxide solution.Type: GrantFiled: September 16, 2008Date of Patent: June 29, 2010Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Jr., Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank, Evgeni P. Gousev, Supratik Guha, Rajarao Jammy, Vijay Narayanan, Vamsi K. Paruchuri
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Publication number: 20090280631Abstract: The present invention, in one embodiment provides a method of forming a semiconducting device including providing a substrate including a semiconducting surface, the substrate comprising a first device region and a second device region; forming a high-k dielectric layer atop the semiconducting surface of the substrate; forming a block mask atop the second device region of the substrate, wherein the first device region of the substrate is exposed; forming a first metal layer atop the high-k dielectric layer present in the first device region of the substrate; removing the block mask to expose a portion of the high-k dielectric layer in the first device region of the substrate; forming a second metal layer atop the portion of the high-k dielectric layer in the second device region and atop the first metal in the first device region of the substrate; and forming gate structures in the first and second device regions of the substrate.Type: ApplicationFiled: May 9, 2008Publication date: November 12, 2009Inventors: Jeffrey P. Gambino, Michael P. Chudzik, Renee T. Mo
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Patent number: 7601577Abstract: Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second and third metals, respectively, to move the work function of the first metal in opposite directions in the different regions. The resulting work functions in the different regions correspond to that of different types of the transistors that are to be formed.Type: GrantFiled: October 11, 2007Date of Patent: October 13, 2009Assignee: Texas Instruments IncorporatedInventors: James Joseph Chambers, Mark Robert Visokay, Luigi Colombo, Antonio Luis Pacheco Rotondaro
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Patent number: 7534689Abstract: A stress enhanced MOS transistor and methods for its fabrication are provided. In one embodiment the method comprises forming a gate electrode overlying and defining a channel region in a monocrystalline semiconductor substrate. A trench having a side surface facing the channel region is etched into the monocrystalline semiconductor substrate adjacent the channel region. The trench is filled with a second monocrystalline semiconductor material having a first concentration of a substitutional atom and with a third monocrystalline semiconductor material having a second concentration of the substitutional atom. The second monocrystalline semiconductor material is epitaxially grown to have a wall thickness along the side surface sufficient to exert a greater stress on the channel region than the stress that would be exerted by a monocrystalline semiconductor material having the second concentration if the trench was filled by the third monocrystalline material alone.Type: GrantFiled: November 21, 2006Date of Patent: May 19, 2009Assignee: Advanced Micro Devices, Inc.Inventors: Rohit Pal, Igor Peidous, David Brown
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Patent number: 7488629Abstract: A method for fabricating an active-matrix organic electroluminescent (OEL) display panel is described. A transparent conductive layer is formed on a substrate as a common anode for all organic light emitting diodes (OLED), and a passivation layer is formed on the transparent conductive layer. Thin film transistors are formed on the passivation layer to serve as an active matrix, and openings are formed in the passivation layer to expose portions of the transparent conductive layer and define pixel regions. An organic function layer is formed in each opening, and a metal electrode layer is formed on each organic function layer, wherein the metal electrode layer is electrically connected with the drain of the corresponding thin film transistor.Type: GrantFiled: October 20, 2006Date of Patent: February 10, 2009Assignee: Au Optronics CorporationInventor: Chiao-Ju Lin
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Publication number: 20080299721Abstract: A method for forming semiconductor transistor. The method comprises providing a structure including (a) a semiconductor region, and (b) first and second dopant source regions on and in direct physical contact with the semiconductor region, wherein each region of the first and second dopant source regions comprises a dielectric material which contains dopants; causing the dopants to diffuse from the first and second dopant source regions into the semiconductor region so as to form first and second source/drain extension regions, respectively, wherein the first and second source/drain extension regions define a channel region disposed between; forming a gate dielectric region on a channel region; and forming a gate region on the gate dielectric region, wherein the gate dielectric region electrically insulates the gate region from the channel region.Type: ApplicationFiled: August 11, 2008Publication date: December 4, 2008Inventor: Anthony C. Speranza
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Publication number: 20080283929Abstract: In a p channel MOS transistor and an n channel MOS transistor each having a gate electrode made of metal on a gate insulating film made of oxide whose relative dielectric constant is higher than that of silicon oxide, threshold voltage thereof is reduced. A gate insulating film of a p channel MOS transistor and an n channel MOS transistor is made of hafnium oxide, a gate electrode of the p channel MOS transistor is made of ruthenium, and a gate electrode of the n channel MOS transistor is made of alloy containing ruthenium as a base material and hafnium.Type: ApplicationFiled: May 11, 2008Publication date: November 20, 2008Inventor: Toshihide Nabatame
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Patent number: 7452767Abstract: A method of forming a CMOS structure, and the device produced therefrom, having improved threshold voltage and flatband voltage stability. The inventive method includes the steps of providing a semiconductor substrate having an nFET region and a pFET region; forming a dielectric stack atop the semiconductor substrate comprising an insulating interlayer atop a high k dielectric; removing the insulating interlayer from the nFET region without removing the insulating interlayer from the pFET region; and providing at least one gate stack in the pFET region and at least one gate stack in the nFET region. The insulating interlayer can be AlN or AlOxNy. The high k dielectric can be HfO2, hafnium silicate or hafnium silicon oxynitride. The insulating interlayer can be removed from the nFET region by a wet etch including a HCl/H2O2 peroxide solution.Type: GrantFiled: August 7, 2006Date of Patent: November 18, 2008Assignee: International Business Machines CorporationInventors: Nestor A. Bojarczuk, Jr., Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank, Evgeni P. Gousev, Supratik Guha, Rajarao Jammy, Vijay Narayanan, Vamsi K. Paruchuri
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Publication number: 20080280404Abstract: A method for forming a microelectronic structure uses a mask layer located over a target layer. The target layer may be etched while using the mask layer as an etch mask to form an end tapered target layer from the target layer. An additional target layer may be formed over the end tapered target layer and masked with an additional mask layer. The additional target layer may be etched to form a patterned additional target layer separated from the end tapered target layer and absent an additional target layer residue adjacent the end tapered target layer. The method is useful for fabricating CMOS structures including nFET and pFET gate electrodes comprising different NFET and pFET gate electrode materials.Type: ApplicationFiled: May 10, 2007Publication date: November 13, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael Chudzik, Bruce B. Doris, William K. Henson, Hongwen Yan, Ying Zhang
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Publication number: 20080185667Abstract: An Mo film (6) is formed on a SiO2 film (5) by particularly using the film thickness and the deposition temperature (ambient temperature in a sputtering chamber) as the primary parameters and adjusting the film thickness to be within the range from 100 nm to 500 nm (more preferably 100 nm to 300 nm) and the deposition temperature to be within the range from 25° C. to 300° C., so as to control residual stress to have a predetermined value of 300 MPa or greater and to be oriented to increase the in-plane lattice constant. There can be thus provided a reliable CMOSTFT in which desired strain is easily and reliably imparted to polysilicon thin films (4a and 4b) to improve the mobility therein without adding an extra step of imparting the strain to the silicon thin film.Type: ApplicationFiled: September 17, 2004Publication date: August 7, 2008Inventors: Kenichi Yoshino, Akito Hara, Michiko Takei, Takuya Hirano
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Patent number: 7384800Abstract: In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of ?-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of ?-Ta is provided on the Ta2O5 layer. Such a device exhibits strong data retention, along with resistance to performance degradation under high temperatures.Type: GrantFiled: December 5, 2006Date of Patent: June 10, 2008Assignee: Spansion LLCInventors: Steven Avanzino, Sameer Haddad, An Chen, Yi-Ching Jean Wu, Suzette K. Pangrle, Jeffrey A. Shields
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Patent number: 7381608Abstract: A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificial layer is removed to generate a trench. A high-k gate dielectric layer is formed on the nitrided silicon dioxide layer within the trench, and a metal gate electrode is formed on the high-k gate dielectric layer.Type: GrantFiled: December 7, 2004Date of Patent: June 3, 2008Assignee: Intel CorporationInventors: Justin K. Brask, Sangwoo Pae, Jack Kavalieros, Matthew V. Metz, Mark L. Doczy, Suman Datta, Robert S. Chau, Jose A. Maiz
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Patent number: 7374998Abstract: A device and method for selective placement of charge into a gate stack includes forming gate stacks including a gate dielectric adjacent to a transistor channel and a gate conductor and forming doped regions for transistor operation. A layer rich in a passivating element is deposited over the doped regions and the gate stack, and the layer rich the passivating element is removed from selected transistors. The layer rich in the passivating element is than annealed to drive-in the passivating element to increase a concentration of charge at or near transistor channels on transistors where the layer rich in the passivating element is present. The layer rich in the passivating element is removed.Type: GrantFiled: February 3, 2006Date of Patent: May 20, 2008Assignee: International Business Machines CorporationInventors: John Michael Hergenrother, Zhibin Ren, Dinkar Virendra Singh, Jeffrey William Sleight
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Patent number: 7241677Abstract: This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional groups for the reduction of a metal oxide layer formed during the production of an integrated circuit. According to the present process the metal oxide layer is at least partly reduced to elemental metal with a reducing agent selected from organic compounds containing one or more of the following functional groups: alcohol (—OH), aldehyde (—CHO), and carboxylic acid (—COOH).Type: GrantFiled: April 19, 2005Date of Patent: July 10, 2007Assignee: ASM International N.V.Inventors: Pekka Juha Soininen, Kai-Erik Elers