With An Heterojunction, E.g., Resonant Tunneling Diodes (rtd) (epo) Patents (Class 257/E21.367)
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Patent number: 8759164Abstract: In a method for manufacturing an integral imaging device, a layer of curable adhesive is first applied on a flexible substrate and half cured such that the curable adhesive is solidified but is capable of deforming under external forces. Then the curable adhesive is printed into a lenticular lens having a predetermined shape and size using a roll-to-roll processing device and fully cured such that the curable adhesive is capable of withstanding external forces to hold the predetermined shape and size. Last, a light emitting diode display is applied on the flexible substrate opposite to the lenticular lens such that an image plane of the light emitting diode display coincides with a focal plane of the lenticular lens.Type: GrantFiled: June 20, 2012Date of Patent: June 24, 2014Assignee: Hon Hai Precision Industry Co., Ltd.Inventor: Chia-Ling Hsu
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Patent number: 8629047Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.Type: GrantFiled: July 9, 2012Date of Patent: January 14, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zhiyuan Cheng, Calvin Sheen
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Patent number: 8604772Abstract: A sensor assembly for electric field sensing is provided. The sensor assembly may include an array of Micro-Electro-Mechanical System (MEMS)-based resonant tunneling devices. A resonant tunneling device may be configured to generate a resonant tunneling signal in response to the electric field. The resonant tunneling device may include at least one electron state definer responsive to changes in at least one respective controllable characteristic of the electron state definer. The changes in the controllable characteristic are configured to affect the tunneling signal. An excitation device may be coupled to the resonant tunneling device to effect at least one of the changes in the controllable characteristic affecting the tunneling signal. A controller may be coupled to the resonant tunneling device and the excitation device to control the changes of the controllable characteristic in accordance with an automated control strategy configured to reduce an effect of noise on a measurement of the electric field.Type: GrantFiled: October 29, 2010Date of Patent: December 10, 2013Assignee: General Electric CompanyInventors: Ertugrul Berkcan, Naresh Kesa Van Rao, Aaron Knobloch
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Patent number: 8421137Abstract: A device includes a magnetic tunnel junction (MTJ) structure and a cap layer in contact with the MTJ structure. The device also includes a spin-on material layer in contact with a sidewall portion of the cap layer and a conducting layer in contact with at least the spin-on material layer and a portion of the MTJ structure. The cap layer has been etched to expose a portion of an electrode contact layer of the MTJ structure. The conducting layer is in electrical contact with the exposed portion of the electrode contact layer of the MTJ structure.Type: GrantFiled: April 28, 2010Date of Patent: April 16, 2013Assignee: QUALCOMM IncorporatedInventors: Xia Li, Seung H. Kang, Xiaochun Zhu
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Patent number: 8216951Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.Type: GrantFiled: December 20, 2010Date of Patent: July 10, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Zhiyuan Cheng, Calvin Sheen
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Patent number: 8124432Abstract: In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.Type: GrantFiled: December 3, 2009Date of Patent: February 28, 2012Assignee: Opnext Japan, Inc.Inventors: Tomonobu Tsuchiya, Shigehisa Tanaka, Akihisa Terano, Kouji Nakahara
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Patent number: 7781248Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.Type: GrantFiled: October 10, 2008Date of Patent: August 24, 2010Assignee: Samsung LED Co., Ltd.Inventors: Hyun Wook Shim, Yong Chun Kim, Joong Seo Kang
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Patent number: 7776623Abstract: A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, the method includes depositing a cap layer on a magnetic tunnel junction (MTJ) structure, depositing a first spin-on material layer over the cap layer, and etching the first spin-on material layer and at least a portion of the cap layer.Type: GrantFiled: June 30, 2008Date of Patent: August 17, 2010Assignee: QUALCOMM IncorporatedInventors: Xia Li, Seung H. Kang, Xiaochun Zhu
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Patent number: 7772599Abstract: A gallium-nitride-based semiconductor stacked structure includes a low-temperature-deposited buffer layer and an active layer. The low-temperature-deposited buffer layer is composed of a Group III nitride material that has been grown at low temperature and includes a single-crystal layer in an as-grown state, the single-crystal layer being present in the vicinity of a junction area that is in contact with a (0001) (c) plane of a sapphire substrate. The active layer is composed of a gallium-nitride (GaN)-based semiconductor layer that is provided on the low-temperature-deposited buffer layer. The single-crystal layer is composed of a hexagonal AlXGaYN (0.5<X?1, X+Y=1) crystal that contains aluminum in a predominant amount with respect to gallium such that a [2.?1.?1.0.] direction of the AlXGaYN crystal orients along with a [2.?1.?1.0.] direction of the (0001) bottom plane of the sapphire substrate.Type: GrantFiled: May 25, 2005Date of Patent: August 10, 2010Assignee: Showa Denko K.K.Inventor: Takashi Udagawa
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Patent number: 7713770Abstract: A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride semiconductor layer on the active layer; and lowering a temperature while adding oxygen to the result by performing a thermal process.Type: GrantFiled: September 27, 2006Date of Patent: May 11, 2010Assignee: LG Innotek Co., Ltd.Inventor: Dae Sung Kang
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Publication number: 20080142783Abstract: Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 ?A/?m2 are also provided.Type: ApplicationFiled: February 13, 2008Publication date: June 19, 2008Inventors: David Todd Emerson, Michael John Bergmann, Amber Abare, Kevin Haberern
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Publication number: 20080128678Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.Type: ApplicationFiled: December 5, 2005Publication date: June 5, 2008Inventor: Suk Hun Lee