Abstract: Disclosed herein is a three-dimensional (3D) semiconductor package. The 3D semiconductor package includes a printed circuit board, a main interposer that is formed on the printed circuit board, a semiconductor device that is formed on the main interposer, and a support interposer that is disposed on the same plane as a plane of the semiconductor device, or disposed between the main interposer and the semiconductor device. Here, each of the main interposer, the semiconductor device, and the support interposer may include a through-via formed based on a thickness direction of the printed circuit board.

Abstract: A chip on film (COF) is disclosed in the present disclosure, which comprises an adhesive base layer, a driving integrated circuit (IC), an adhesive layer and a copper layer. The driving IC is embedded on a surface of the adhesive base layer; the adhesive layer is located under the adhesive base layer; the copper layer is located under the adhesive layer. The adhesive base layer is formed with a heat and pressure spreading structure. A heat and pressure spreading structure is disposed on the adhesive base layer of the COF so that deformation or unevenness of the glass substrate in the bonded area can be avoided when the COF is thermally pressed to the glass substrate of the LCD. These guarantees the consistency between the bonded area and the unbounded area, the bonded area and the unbounded area of the glass substrate will have the same transmissivity and luminance.

Abstract: An integrated circuit structure includes a lower dielectric layer; an upper dielectric layer over the lower dielectric layer; and a seal ring. The seal ring includes an upper metal line in the upper dielectric layer; a continuous via bar underlying and abutting the upper metal line, wherein the continuous via bar has a width greater than about 70 percent of a width of the upper metal line; a lower metal line in the lower dielectric layer; and a via bar underlying and abutting the lower metal line. The via bar has a width substantially less than a half of a width of the lower metal line.

Abstract: A metal layer is deposited over a material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation or nitridation. A hard mask portion is formed over the metal layer. A plasma impermeable spacer is formed on at least one first sidewall of the hard mask portion, while at least one second sidewall of the hard mask portion is physically exposed. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. A sequence of a surface pull back of the hard mask portion, cavity etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a hole pattern having a spacing that is not limited by lithographic minimum dimensions.

Abstract: A semiconductor package substrate suitable for supporting a damage-sensitive device and a package substrate core having an upper and a lower surface. At least one pair of metal layers coats the upper and lower surfaces of the package substrate core. One pair of solder mask layers coats the outer metal layers of the at least one pair of metal layers. A plurality of vias is formed across the package substrate core and the at least one pair of metal layers. Advantageously, the plurality of vias is substantially distributed according to a homogeneous pattern in an area that is to be covered by the damage-sensitive device. A method for the production of such semiconductor package substrate is also described.

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract: The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Abstract: A device includes a first package component and the second package component. The first package component includes a first plurality of connectors at a top surface of the first package component, and a second plurality of connectors at the top surface. The second package component is over and bonded to the first plurality of connectors, wherein the second plurality of connectors is not bonded to the second package component. A solder resist is on the top surface of the first package component. A trench is disposed in the solder resist, wherein a portion of the trench spaces the second plurality of connectors apart from the first plurality of connectors.

Abstract: “Hybrid” transmission line circuits employing multiple interconnect levels for the propagation, or return, of a single signal line across a package length are described. In package transmission line circuit embodiments, a signal line employs co-located traces in two different interconnect levels that are electrically coupled together. In further embodiments, a reference plane is provided above, below or co-planar with at least one of the co-locate traces. In embodiments, a balanced signal line pair includes first and second co-located traces in two adjacent interconnect levels as a propagation signal line and third and fourth co-located traces in the two adjacent interconnect levels as a return signal line with a ground plane co-planar with, and/or above and/or below the two adjacent interconnect levels.

Abstract: A cavity wafer for flip chip stacking includes an electrostatic (ESC) chuck wafer with a plurality of cavities, and a bonding layer on a surface of the ESC chuck wafer. The bonding layer is configured to receive a through-silicon-via (TSV) interposer with solder bumps. The plurality of cavities are configured to receive the solder bumps at the TSV interposer. The bonding layer is configured to receive an electrostatic bias for bonding the ESC chuck wafer to the TSV interposer with the solder bumps.

Abstract: An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination.

Abstract: Methods and structures are described to reduce metallic redeposition material in the memory cells, such as MTJ cells, during pillar etching. One embodiment forms metal studs on top of the landing pads in a dielectric layer that otherwise covers the exposed metal surfaces on the wafer. Another embodiment patterns the MTJ and bottom electrode separately. The bottom electrode mask then covers metal under the bottom electrode. Another embodiment divides the pillar etching process into two phases. The first phase etches down to the lower magnetic layer, then the sidewalls of the barrier layer are covered with a dielectric material which is then vertically etched. The second phase of the etching then patterns the remaining layers. Another embodiment uses a hard mask above the top electrode to etch the MTJ pillar until near the end point of the bottom electrode, deposits a dielectric, then vertically etches the remaining bottom electrode.

Abstract: A semiconductor device includes a substrate with a front side and a back side, an ILD, disposed on the substrate, a cap layer disposed on the backside of the substrate, a TSV penetrating the cap layer, the substrate and the ILD, wherein a cap layer sidewall in the TSV juts out beyond the substrate sidewall the TSV with a predetermined distance, and a liner is disposed on the substrate sidewall, wherein the liner partially overlaps with the cap layer.

Abstract: A microelectronic assembly includes a substrate and an electrically conductive element. The substrate can have a CTE less than 10 ppm/° C., a major surface having a recess not extending through the substrate, and a material having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element can include a joining portion overlying the recess and extending from an anchor portion supported by the substrate. The joining portion can be at least partially exposed at the major surface for connection to a component external to the microelectronic unit.

Abstract: A semiconductor chip includes a through-silicon via (TSV), a device region, and a cross-talk prevention ring encircling one of the device region and the TSV. The TSV is isolated from substantially all device regions comprising active devices by the cross-talk prevention ring.

Abstract: A semiconductor package includes a printed circuit board, a chip, a protection frame, and a covering layer. The chip is mounted on the printed circuit board and is electrically connected to the printed circuit board through a number of first bonding wires. The protection frame includes a sidewall surrounding the chip and the bonding wires and defines a number of through holes passing through an inner surface and an outer surface of the sidewall. The protection frame is filled with adhesive. The adhesive adheres to the inner surface and covers the chip and the boding wires. The covering layer is coated on the outer surface and covers the through holes.

Abstract: The present invention relates to a semiconductor structure and a method for manufacturing the same.

Abstract: An integrated circuit package including a semiconductor die and a flexible circuit (flex circuit), and a method for forming the integrated circuit package. The flex circuit can include a direct connect pad which is not electrically coupled to an active trace, a blind via electrically coupled to the direct connect pad, and a semiconductor die having a bond pad which is electrically coupled to the direct connect pad using a conductor. The bond pad, the conductor, the direct connect pad, and the blind via can all be vertically aligned, each with the other.

Abstract: A packaging substrate includes a high reliability via structure that extends through multiple layers of the packaging substrate. The via structure includes an opening formed through multiple layers of the packaging substrate and an electrically conductive layer that is deposited in the opening. The opening is formed in a single material removal process and the conductive layer is formed in a single deposition process. Because the conductive layer is formed in a single deposition process, the conductive layer provides an interface-free conductive path between the multiple layers.

Abstract: A method of processing a substrate having integrated circuitry includes forming through-substrate vias partially through the substrate from a first side of the substrate. At least one through-substrate structure is formed partially through the substrate from the first substrate side. The at least one through-substrate structure extends deeper into the substrate than do the through-substrate vias. Substrate material is removed from a second side of the substrate to expose the through-substrate vias and the at least one through-substrate structure on the second substrate side. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.

Abstract: The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

Abstract: A device includes a substrate having a first surface, and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the substrate. A dielectric layer is disposed over the substrate. A metal pad is disposed in the dielectric layer and physically contacting the TSV, wherein the metal pad and the TSV are formed of a same material, and wherein no layer formed of a material different from the same material is between and spacing the TSV and the metal pad apart from each other.

Abstract: A hybrid integrated circuit device having high mount reliability includes a module substrate which is a ceramic wiring substrate, a plurality of electronic component parts laid out on the main surface of the module substrate, a plurality of electrode terminals laid out on the rear surface of the module substrate, and a cap which is fixed to the module substrate to cover the main surface of the module substrate. The electrode terminals include ones which are aligned along the edges of the module substrate and power voltage supply terminals which are located inner than these electrode terminals. The electrode terminals aligned along the substrate edges are coated, at least in their portions close to the substrate edge, with a protection film having a thickness of several tens micrometers or less. Connection reinforcing terminals consist of a plurality of divided terminals which are independent of each other, and are ground terminals.

Abstract: A multilayer printed wiring board in which interlayer insulation layer and conductive layer are formed on a multilayer core substrate composed of three or more layers, having through holes for connecting the front surface with the rear surface and conductive layers on the front and rear surfaces and conductive layer in the inner layer to achieve electric connection through via holes, the through holes being composed of power source through holes, grounding through holes and signal through holes connected electrically to a power source circuit or a grounding circuit or a signal circuit of an IC chip, when the power source through holes pass through the grounding conductive layer of the inner layer in the core substrate, of the power source through holes, at least a power source through hole just below the IC having no conductive circuit extending from the power source through hole in the grounding conductive layer.

Abstract: Semiconductor devices, methods of manufacture thereof, and methods of forming conductive features thereof are disclosed. A semiconductor device includes an insulating material layer disposed over a workpiece. The insulating material layer includes a silicon-containing material comprising about 13% or greater of carbon (C). A conductive feature is disposed within the insulating material layer. The conductive feature includes a capping layer disposed on a top surface thereof.

Abstract: A semiconductor package includes a semiconductor die having contact pads. An encapsulant is disposed around the semiconductor die, and conductive vias are disposed in the encapsulant. Electrically conductive traces are disposed between the contact pads and conductive vias, a thermally conductive channel is disposed in the encapsulant separate from the conductive vias, and a thermally conductive layer is disposed over an area of heat generation of the semiconductor die. A thermally conductive trace is disposed between the thermally conductive layer and thermally conductive channel. The thermally conductive layer, thermally conductive trace, and thermally conductive channel are electrically isolated from the contact pads of the semiconductor die and the electrically conductive traces. The semiconductor package further comprises broad thermal traces disposed over the encapsulant, and a thermally conductive material interconnecting the broad thermal traces and the thermally conductive layer.

Abstract: A layout structure includes a substrate, a well, a first dopant area, a second dopant area, a first poly region, a third dopant area, a fourth dopant area, and a second poly region. The well is in the substrate. The first poly region is in between the first dopant area and the second dopant area. The second poly region is in between the third dopant area and the fourth dopant area. The first dopant area, the second dopant area, the third dopant area, and the fourth dopant area are in the well. The first dopant area is configured to serve as a source of a transistor and to receive a first voltage value from a first power supply source. The well is configured to serve as a bulk of the transistor and to receive a second voltage value from a second power supply source.

Abstract: A system and method for making semiconductor die connections with through-silicon vias (TSVs) are disclosed. TSVs are formed through the substrate to allow for signal connections as well as power and ground connections. In one embodiment this allows these connections to be made throughout the substrate instead of on the periphery of the substrate. In another embodiment, the TSVs are used as part of a power matrix to supply power and ground connections to the active devices and metallization layers through the substrate.

Abstract: Through silicon via (TSV) isolation structures are provided and suppress electrical noise such as may be propagated through a semiconductor substrate when caused by a signal carrying active TSV such as used in 3D integrated circuit packaging. The isolation TSV structures are surrounded by an oxide liner and surrounding dopant impurity regions. The surrounding dopant impurity regions may be P-type dopant impurity regions that are coupled to ground or N-type dopant impurity regions that may advantageously be coupled to VDD. The TSV isolation structure is advantageously disposed between an active, signal carrying TSV and active semiconductor devices and the TSV isolation structures may be formed in an array that isolates an active, signal carrying TSV structure from active semiconductor devices.

Abstract: A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape.

Abstract: A TSV structure includes a through via connecting a first side and a second side of a wafer, a conductive layer which fills up the through via, a through via dielectric ring surrounding and directly contacting the conductive layer, a first conductive ring surrounding and directly contacting the through via dielectric ring as well as a first dielectric ring surrounding and directly contacting the first conductive ring and surrounded by the wafer.

Abstract: In one embodiment, an interposer resistant to warping is provided. The interposer includes a semiconductor body having a first contact array included on a first side of the semiconductor body. Vias are formed through the semiconductor body. One or more wiring layers are included on the first side of the semiconductor body. The wiring layers electrically couple each contact of the first contact array to a respective one of the vias. Contacts of a second contact array, included on a second side of the semiconductor body, are respectively coupled to the vias. A stabilization layer is included on the second side of the semiconductor body. The stabilization layer is configured to counteract stresses exerted on a front side of the interposer due to thermal expansion of wiring layers.

Abstract: Some embodiments include a planarization method. A liner is formed across a semiconductor substrate and along posts that extending upwardly from the substrate. Organic fill material is formed over the liner and between the posts. A planarized surface is formed which extends across the posts and across one or both of the liner and the fill material. Some embodiments include a semiconductor construction containing a semiconductor die. Electrically conductive posts extend through the die. The posts have upper surfaces above a backside surface of the die, and have sidewall surfaces extending between the backside surface and the upper surfaces. A liner is across the backside surface of the die and along the sidewall surfaces of the posts. Electrically conductive caps are over the upper surfaces of the posts, and have rims along the liner adjacent the sidewall surfaces of the posts.

Abstract: A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.

Abstract: The invention provides a structure and a manufacturing method thereof for reducing a stress of a chip. The structure comprises a through-silicon via (TSV), a plurality of reinforcing base and a plurality of base bodies. The reinforcing bases are disposed near and around the TSV. The base bodies are disposed near and around the TSV, and the base is disposed on a side of the reinforcing base. The reinforcing base or the base body does not connected with the TSV.

Abstract: Various embodiments for molding tools for moisture-resistant image sensor packaging structures and methods of assembly are disclosed. Image sensor packages of the present invention include an interposer, a housing structure formed on the interposer for surrounding an image sensor chip, and a transparent cover. The housing structure may cover substantially all of the interposer chip surface. In another embodiment, the housing structure also covers substantially all of the interposer edge surfaces. The housing structure may also cover substantially all of the interposer attachment surface. An image sensor chip is electrically connected to the interposer with sealed wire bond connections or with sealed flip-chip connections. The housing structure may include runners that enable simultaneous sealing of the interior of the image sensor package and of the transparent cover.

Abstract: Broadly speaking, the embodiments of the present invention fill the need for methods of designing vertical transmission lines for optimal signal transition in multi-layer BGA packages. By controlling the impedance and geometry continuity of micro vias in each micro via layer in the package to follow smooth impedance and geometry curves from layer to layer, the return loss and insertion loss of the transmission line can be reduced or controlled to within acceptable ranges.

Abstract: A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the semiconductor substrate. A well region of a second conductivity type opposite the first conductivity type encircles the TSV, and extends from the first surface to the second surface of the semiconductor substrate.

Abstract: A semiconductor device includes a circuit pattern over a first surface of a substrate, an insulating interlayer covering the circuit pattern, a TSV structure filling a via hole through the insulating interlayer and the substrate, an insulation layer structure on an inner wall of the via hole and on a top surface of the insulating interlayer, a buffer layer on the TSV structure and the insulation layer structure, a conductive structure through the insulation layer structure and a portion of the insulating interlayer to be electrically connected to the circuit pattern, a contact pad onto a bottom of the TSV structure, and a protective layer structure on a second surface the substrate to surround the contact pad.

Abstract: According to an embodiment, a semiconductor device includes a first circuit block, a first through-substrate via, and a back surface wiring. The first circuit block is provided on a surface side of a semiconductor substrate. The first through-substrate via is provided along a circumference of the first circuit block so as to separate the first circuit block from other circuit blocks. The first circuit block is provided so as to penetrate the surface of the semiconductor substrate. The first circuit block is isolated from the surroundings. The first circuit block has conductivity. The back surface wiring is provided on the back surface side of the semiconductor substrate. The back surface wiring is connected to the first through-substrate via. The back surface wiring connects the first through-substrate via to a power supply terminal or a shield potential terminal.

Abstract: A method for stacking and interconnecting integrated circuits includes providing at least two substrates; forming a trench in each substrate; filling the trench with an insulating material; forming, in each substrate, at least one conductive area; thinning each substrate until reaching at least the bottom of the trench, to obtain in each substrate at least one electrically insulated region within the closed perimeter delineated by the trench; bonding the substrates together; making at least one hole through the bonded substrates so that the hole passes at least partially through the conductive areas and passes through the insulated region of each substrate; and filling the hole with an electrically conductive material so as to obtain a conductive column that traverses the isolated region of each substrate and is in lateral electrical contact with the conductive areas.

Abstract: A semiconductor device includes at least one first component (5) (for example, a first integrated circuit), having a front face provided with electrical connection pads. The first component is embedded in a support layer (2) is a position such that the front face of the first component is not covered and lies parallel to a first face of the support layer. An intermediate layer (8) is formed on the front face of the first component and on the first face of the support layer. An electrical connection network (9) within the intermediate layer selectively connects to the electrical connection pads of the first component. The device further includes at least one second component (11) (for example, a second integrate circuit, having one face placed above the intermediate layer and provided with electrical connection pads selectively connected to the electrical connection network.

Abstract: A substrate includes a first plate member; a plurality of first electrodes provided on the major surface of the first plate member, the first electrodes including at least one electrode for circuit connection and at least one monitor electrode separate from the electrode for circuit connection; a second plate member; a plurality of second electrodes provided on the major surface of the second plate member; a plurality of solder members provided between the first electrodes and the second electrodes for electrical connection therebetween, repeatedly; and a detector for detecting an electrical disconnection between at least one of the monitor electrode and the second electrode.

Abstract: An interconnect structure including: at least one first substrate, whereof at least one first face is made integral with at least one face of at least one second substrate, at least one blind via passing through the first substrate and emerging at the first face of the first substrate and at a second face, opposite the first face, of the first substrate, at least one electric contact arranged against said face of the second substrate and opposite the blind via, and/or against the first face and/or against the second face of the first substrate, at least one channel putting the blind via in communication with an environment outside the interconnect structure and/or with at least one cavity formed in the interconnect structure, and extending substantially parallel to one of said faces of the first or second substrate.

Abstract: A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.

Abstract: An exemplary implementation of the present disclosure includes a stacked package having a top die from a top reconstituted wafer situated over a bottom die from a bottom reconstituted wafer. The top die and the bottom die are insulated from one another by an insulation arrangement. The top die and the bottom die are also interconnected through the insulation arrangement. The insulation arrangement can include a top molding compound that flanks the top die and a bottom molding compound that flanks the bottom die. The top die and the bottom die can be interconnected through at least the top molding compound. Furthermore, the top die and the bottom die can be interconnected through a conductive via that extends within the insulation arrangement.

Abstract: Provided is a manufacturing method of a substrate for a semiconductor element including the steps of: providing a first photosensitive resin layer on a first surface of a metal plate; providing a second photosensitive resin layer on a second surface different from the first surface of the metal plate; forming a first etching mask for forming a connection post on the first surface of the metal plate; forming a second etching mask for forming a wiring pattern on the second surface of the metal plate; forming the connection post by performing an etching from the first surface to a midway of the metal plate; filling in a premold resin to a portion of the first surface where the connection post does not exist; processing so that a height of the connection post of the first surface is lower than a height of the premold resin surrounding the connection post; and forming the wiring pattern by performing an etching on the second surface.

Abstract: A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings.

Abstract: A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.

Abstract: A method of fabricating a semiconductor device includes the following steps. A semiconductor substrate having a first side and a second side facing to the first side is provided. At least an opening is disposed in the semiconductor substrate of a protection region defined in the first side. A first material layer is formed on the first side and the second side, and the first material layer partially fills the opening. Subsequently, a part of the first material layer on the first side and outside the protection region is removed. A second material layer is formed on the first side and the second side, and the second material layer fills the opening. Then, a part of the second material layer on the first side and outside the protection region is removed. Finally, the remaining first material layer and the remaining second material layer on the first side are planarized.