Abstract: Embodiments provide a method for manufacturing a microelectronic arrangement. The method includes a step of providing a chip-film module with a semiconductor chip and a film substrate having arranged thereon the semiconductor chip, wherein the chip-film module includes at least one coupling element spaced apart from the semiconductor chip and electrically coupled to at least one terminal of the semiconductor chip. Furthermore, the method includes a step of embedding the chip-film module into a printed circuit board, wherein, in embedding the chip-film module into the printed circuit board, the at least one coupling element of the chip-film module is coupled vertically [e.g. in the vertical direction [e.g. in relation to the printed circuit board]] [e.g. perpendicular to a surface of the printed circuit board] to at least one coupling counter element of the printed circuit board.

Abstract: A wiring board may include a core portion having first and second surfaces, and first and second buildup portions on the first and second surfaces, respectively. Each of the first and second buildup portions may include a first insulating layer on the core portion, a wire pattern on the first insulating layer, a second insulating layer on the first insulating layer to cover the wire pattern, and a protection layer covering the second insulating layer and exposing a portion of the wire pattern. The second insulating layer may include a resin layer and inorganic fillers distributed in the resin layer. The fillers may not be provided in the protection layer, and the resin layer of the second insulating layer and the protection layer may be formed of the same material. The wire patterns of the first and second buildup portions may be electrically connected to each other.

Abstract: In a semiconductor device, a substrate has a main surface. A first semiconductor chip has a first front surface and a first back surface, and is mounted on the main surface via a plurality of bump electrodes. A first spacer has a second front surface and a second back surface that is mounted on the main surface. A height of the second front surface from the main surface is within a range between a highest height and a lowest height of the first back surface from the main surface. A second spacer has a third front surface and a third back surface that is mounted on the main surface. A height of the third front surface from the main surface is within the range between the highest height and the lowest height of the first back surface from the main surface.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: A printed circuit board (PCB) assembly is provided. The PCB assembly comprises a printed wiring board (PWB) and one or more electrical components mounted thereon. The PWB comprises a plurality of layers including conductive layers and insulative layers, where one or more of the insulative layers is a prepreg layer that is halogen-free; one or more slotted portions on a surface of the PWB, which are indented into the PWB; and one or more pads disposed on the surface of the PWB, which are paired with the one or more slotted portions. Each of the one or more electrical components is mounted on the surface of the PWB through a pair of a slotted portion and a pad.

Abstract: A semiconductor device package includes a carrier, an electronic component, a connection element and an encapsulant. The electronic component is disposed on a surface of the carrier. The connection element is disposed on the surface and adjacent to an edge of the carrier. The encapsulant is disposed on the surface of the carrier. A portion of the connection element is exposed from an upper surface and an edge of the encapsulant.

Abstract: A package structure and method for forming the same are provided. The package structure includes a package component, and a dummy die disposed over the package component. The package structure includes a device die adjacent to the dummy die, and the device die includes a conductive pad, and the conductive pad is electrically connected to the package component.

Abstract: A method for manufacturing a circuit board comprises: a first single-sided board and an insulating structure are provided. The first single-sided board is pressed to the insulating structure and covers opposite side surfaces of the insulating structure to form a first laminated board. A second single-sided board and a third single-sided board are provided. The second single-sided board is pressed to the third single-sided board and covers opposite side walls of the third single-sided board to form a second laminated board. An inner wiring layer is formed by the second laminated board. The second laminated board with the inner wiring layer and the first laminated board are pressed to form an intermediate structure. Outer wiring layers are formed by the intermediate structure. Covering films are formed on surfaces of the outer wiring layers. Electromagnetic interference shielding layers are formed on the covering films.

Abstract: An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.

Abstract: A fingerprint sensor package, including a sensing side for sensing fingerprint information and a separate connection side for electrically connecting the fingerprint sensor package to a host device, is disclosed. The fingerprint sensor package can also include a sensor integrated circuit facing the sensing side and substantially surrounded by a fill material. The fill material includes vias at peripheral locations around the sensor integrated circuit. The fingerprint sensor package can further include a redistribution layer on the sensing side which redistributes connections of the sensor integrated circuit to the vias. The connections can further be directed through the vias to a ball grid array on the connection side. Some aspects also include electrostatic discharge traces positioned at least partially around a perimeter of the connection side. Methods of manufacturing are also disclosed.

Abstract: A through-hole that extends from an upper surface of a cover opposite a support to a lower surface of the support facing a substrate is provided in the support and the cover. The through-hole overlaps a portion of a wiring line in a plan view. An acoustic wave device further includes an electrode film that is electrically connected to the wiring line in the through-hole, and a protective layer that includes an insulating material and that covers a portion of the electrode film. The protective layer is connected to the cover and the support in the through-hole. Differences in thermal expansion coefficients between the protective layer and the cover and between the protective layer and the support are smaller than a difference in thermal expansion coefficients between the protective layer and the electrode film.

Abstract: According to one embodiment, a semiconductor device includes a board, a first member, a first adhesive layer, a first electronic component, a second electronic component, and a resin. The board includes a first surface. The first member includes a second surface, and a third surface made of a material including a first organic material. The first adhesive layer adheres to the first surface and the second surface. The first electronic component is attached to the first surface, and embedded in the first adhesive layer. The resin in which the first member, the first adhesive layer, and the second electronic component embedded adheres to the first surface and the third surface.

Abstract: A semiconductor device includes a printed wiring board; a first semiconductor module including a first package body and a first heat radiation surface on one surface of the first package body, another surface of the first package body, opposite to the first heat radiation surface, faces one face of the printed wiring board; a first heat radiator on the first heat radiation surface; a second semiconductor module including a second package body and a second heat radiation surface on one surface of the second package body, another surface of the second package body, opposite to the second heat radiation surface, faces another face of the printed wiring board; and a second heat radiator provided on the second heat radiation surface. The first and second semiconductor modules are arranged to overlap each other in a plan view. The second semiconductor module is connected in parallel to the first semiconductor module.

Abstract: Examples herein include modules and connections for modules to couple to a computing device. An example module includes a housing comprising an end to couple to a computing device, multiple capacitive pads that each include data contacts to enable data transfer, a power contact pad to provide or receive power, and a ground contact pad to couple to ground. The ground contact pad is larger in size than the power contact pad, and the ground contact pad is positioned closer than the power contact pad to the end of the housing configured to couple to the computing device.

Abstract: An interposer for an integrated circuit includes a first side and a second side. The interposer includes a substrate and a via disposed in the substrate. A first electrical contact is disposed on the first side. A second electrical contact is disposed on the second side and electrically connected to the via. The interposer also includes a multiple-time programmable (“MTP”) element electrically connected to the first electrical contact and/or the via.

Abstract: A package structure including a first semiconductor element, a second semiconductor element, a semiconductor interposer and a substrate is provided. The first semiconductor element includes multiple first conductive bumps. The second semiconductor element includes multiple second conductive bumps. The semiconductor interposer includes a connection motherboard, at least one signal wire and at least one signal conductive column. The signal wire is disposed on the connection motherboard. The two ends of the signal wire are electrically connected to one of the first conductive bumps and one of the second conductive bumps respectively. The signal conductive column is electrically connected to the signal wire. The substrate is electrically connected to the signal conductive column. The first and the second semiconductor elements have the same circuit structure. The substrate of the package structure can simultaneously form a signal communication path with the first and the second semiconductor element respectively.

Abstract: An embodiment 3DIC device includes a semiconductor chip, a die, and a polymer. The semiconductor chip includes a semiconductor substrate, wherein the semiconductor substrate comprises a first edge, and a low-k dielectric layer over the semiconductor substrate. The die is disposed over and bonded to the semiconductor chip. The polymer is molded onto the semiconductor chip and the die. The polymer includes a portion level with the low-k dielectric layer, wherein the portion of the polymer comprises a second edge vertically aligned to the first edge of the semiconductor substrate and a third edge contacting the low-k dielectric layer, wherein the second and the third edges are opposite edges of the portion of the polymer.

Abstract: A method for preparing a die for packaging is disclosed. A die having first and second major surfaces is provided. Vias and a mask layer are formed on the first major surface of the die. The mask includes mask openings that expose the vias. The mask openings are filled with a conductive material. The method includes reflowing to at least partially fill the vias and contact openings to form via contacts in the vias and surface contacts in the mask openings.

Abstract: An interconnect for transmitting an electric signal between electronic devices includes a first coupling element electromagnetically coupled to, and immediately juxtaposed to, a second coupling element. The first coupling element is mounted on and is electrically connected to a first electronic device having a first integrated circuit. The second coupling element may be mounted on and electrically connected to the first electronic device, and electrically connected to an interconnect on a second electronic device, or the second coupling element may be mounted on and electrically connected to the second electronic device.

Abstract: A semiconductor device includes: a first semiconductor element having a first terminal surface on which a first terminal is disposed and a first rear surface on which no terminal is disposed; a second semiconductor element having a second terminal surface on which a second terminal is disposed and a second rear surface on which no terminal is disposed, the second rear surface being bonded to the first rear surface; a terminal member having a surface set substantially flush with the second terminal surface; and a conductive wire connecting the terminal member and the first terminal.

Abstract: A package component includes a metal trace on a top surface of the package component, and an anchor via underlying and in contact with the metal trace. The anchor via is configured not to conduct currents flowing through the metal trace.

Abstract: A hermetically sealed integrated circuit package that includes a cavity housing a semiconductor die, whereby the cavity is pressurized during assembly and when formed. The invention prevents the stress on a package created when the package is subject to high temperatures at atmospheric pressure and then cooled from reducing the performance of the die at high voltages. By packaging a die at a high pressure, such as up to 50 PSIG, in an atmosphere with an inert gas, and providing a large pressure in the completed package, the dies are significantly less likely to arc at higher voltages, allowing the realization of single die packages operable up to at least 1200 volts. Moreover, the present invention is configured to employ brazed elements compatible with Silicon Carbide dies which can be processed at higher temperatures.

Abstract: A method for preparing a die for packaging is disclosed. A die having first and second major surfaces is provided. Vias and a mask layer are formed on the first major surface of the die. The mask includes mask openings that expose the vias. The mask openings are filled with a conductive material. The method includes reflowing to at least partially fill the vias and contact openings to form via contacts in the vias and surface contacts in the mask openings.

Abstract: Methods and apparatus are disclosed for wirelessly communicating among integrated circuits and/or functional modules within the integrated circuits. A semiconductor device fabrication operation uses a predetermined sequence of photographic and/or chemical processing steps to form one or more functional modules onto a semiconductor substrate. The functional modules are coupled to an integrated waveguide that is formed onto the semiconductor substrate and/or attached thereto to form an integrated circuit. The functional modules communicate with each other as well as to other integrated circuits using a multiple access transmission scheme via the integrated waveguide. One or more integrated circuits may be coupled to an integrated circuit carrier to form Multichip Module. The Multichip Module may be coupled to a semiconductor package to form a packaged integrated circuit.

Abstract: A microelectronic package including a dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface; a metallic wall bonded to the dielectric layer and projecting upwardly from the top surface of the dielectric layer and surrounding a region of the top surface; a metallic lid bonded to the wall and extending over the region of the top surface so that the lid, the wall and the dielectric layer cooperatively define an enclosed space; and a microelectronic element disposed within the space and electrically connected to the terminals.

Abstract: Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.

Abstract: A substrate includes a first plate member; a plurality of first electrodes provided on the major surface of the first plate member, the first electrodes including at least one electrode for circuit connection and at least one monitor electrode separate from the electrode for circuit connection; a second plate member; a plurality of second electrodes provided on the major surface of the second plate member; a plurality of solder members provided between the first electrodes and the second electrodes for electrical connection therebetween, repeatedly; and a detector for detecting an electrical disconnection between at least one of the monitor electrode and the second electrode.

Abstract: A semiconductor package module includes a circuit board including a board body having a receiving portion and conductive patterns formed on the board body; a semiconductor package received in the receiving portion and having conductive terminals electrically connected to the conductive patterns and an s semiconductor chip electrically connected to the conductive terminals; and a connection member electrically connecting the conductive patterns and the conductive terminals.

Abstract: In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

Abstract: An SiP (semiconductor device) using a stacked packaging method for stacking a microcomputer IC chip over a driver IC chip in which circuits sensitive to heat or noise, including an analog to digital conversion circuit, a digital to analog conversion circuit, a sense amplifier circuit of a memory (RAM or ROM), or a power supply circuit of a microcomputer IC chip, are prevented from two-dimensionally overlapping with a driver circuit of the lower-side driver IC chip to reduce, during the operation, the effect of heat or noise, which the circuits sensitive to heat or noise of the microcomputer IC chip receive from the driver circuit of the lower-side driver IC chip, thereby improving the operation stability of the SiP (semiconductor device) using the stacked packaging method.

Abstract: A stacked integrated circuit having a first die with a first surface and a second die with a second surface facing the first surface, the stacked integrated circuit includes a capacitor. The capacitor is formed by a first conducting plate on a region of the first surface, a second conducting plate on a region of the second surface substantially aligned with the first conducting plate, and a dielectric between the first conducting electrode and the second conducting electrode.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate having a component side; mounting a base device having a base circuit connector directly on the component side; attaching conformal interconnects, having the same pre-deformation height from the component side, directly on the component side and offset from the base device; and attaching a stack substrate having stack interconnects directly on the conformal interconnects, portions of the stack interconnects covered by the conformal interconnects having different deformation heights from the component side.

Abstract: An interposer includes a substrate, a conductive structure configured to contact the back side of a semiconductor device and contact pads. The interposer may include first and second sets of contact pads carried by the substrate. The interposer may also include conductive traces carried by the substrate to electrically connect corresponding contact pads of the first and second sets. The receptacles, which may be formed in a surface of the substrate and expose contacts of the second set, may be configured to at least partially receive conductive structures that are secured to the contact pads of the second set. Thus, the interposer may be useful in providing semiconductor device assemblies and packages of reduced height or profile. Such assemblies and packages are also described, as are multi-chip modules including such assemblies or packages.

Abstract: In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

Abstract: Devices and methods for electrical interconnection for microelectronic circuits are disclosed. One method of electrical interconnection includes forming a bundle of microfilaments, wherein at least two of the microfilaments include electrically conductive portions extending along their lengths. The method can also include bonding the microfilaments to corresponding bond pads of a microelectronic circuit substrate to form electrical connections between the electrically conductive portions and the corresponding bond pads. A microelectronic circuit can include a bundle of microfilaments bonded to corresponding bond pads to make electrical connection between corresponding bonds pads and electrically-conductive portions of the microfilaments.

Abstract: One embodiment provides a semiconductor wafer structure including a semiconductor wafer and a spacer layer. The semiconductor wafer includes active areas. The spacer layer is configured to provide spacing between the semiconductor dice in a stacked die package and the spacer layer is disposed on one side of the semiconductor wafer.

Abstract: Described herein are stackable semiconductor device packages and related stacked package assemblies and methods. In one embodiment, a manufacturing method includes: (1) providing a substrate including contact pads disposed adjacent to an upper surface of the substrate; (2) applying an electrically conductive material to form conductive bumps disposed adjacent to respective ones of the contact pads; (3) electrically connecting a semiconductor device to the upper surface of the substrate; (4) applying a molding material to form a molded structure covering the conductive bumps and the semiconductor device; (5) forming a set of cutting slits extending partially through the molded structure and the conductive bumps to form truncated conductive bumps; and (6) reflowing the truncated conductive bumps to form reflowed conductive bumps.

Abstract: A microelectronic unit, an interconnection substrate, and a method of fabricating a microelectronic unit are disclosed. A microelectronic unit can include a semiconductor element having a plurality of active semiconductor devices therein, the semiconductor element having a first opening extending from a rear surface partially through the semiconductor element towards a front surface and at least one second opening, and a dielectric region overlying a surface of the semiconductor element in the first opening. The microelectronic unit can include at least one conductive interconnect electrically connected to a respective conductive via and extending away therefrom within the aperture. In a particular embodiment, at least one conductive interconnect can extend within the first opening and at least one second opening, the conductive interconnect being electrically connected with a conductive pad having a top surface exposed at the front surface of the semiconductor element.

Abstract: A chip structure and a stacked structure composed of the chip structures are provided. The chip structure has a substrate and at least one compliant contact. Furthermore, the chip structure may further have a redistribution layer for redistributing pads originally disposed around the substrate in a specific arrangement. The substrate has a first surface and a second surface. The compliant contact is embedded into the substrate and protrudes outside the first surface and the second surface of the substrate. The compliant contact has a compliant bump and a conductive layer encapsulating the compliant bump. The conductive layer can be connected with the redistribution layer. Two chip structures can be connected with each other through their compliant contacts or through their compliant contacts or redistribution layers.

Abstract: A module, which in one embodiment may be a packaged millimeter waver module, includes a semiconductor lid portion; a packaging portion attached to the lid portion, wherein the packaging portion comprises a plurality of vias, a carrier portion, wherein a first semiconductor die is attached to the carrier portion, the packaging portion is attached to the carrier portion so that the packaging portion is over the carrier portion and the semiconductor die is within an opening in the packaging portion, and the lid portion and the carrier portion form an first air gap around the first semiconductor device.

Abstract: An assembly of microelectronic devices and method for forming an assembly of microelectronic devices. In one embodiment, the method includes positioning a first packaged microelectronic device adjacent to a support member having support member circuitry, with the first packaged microelectronic device having a first microelectronic die at least partially encased in a first encapsulant to define a first package configuration. The method can further include electrically connecting the first packaged microelectronic device to a first portion of the support member circuitry and positioning at least proximate to the first packaged microelectronic device a second packaged microelectronic device having a second microelectronic die at least partially encased in a second encapsulant to define a second package configuration different than the first package configuration. The first packaged microelectronic device can be positioned between the support member and the second packaged microelectronic device.

Abstract: This research discloses an ultra wideband system-on-package (SoP). The SoP includes a package body; a first integrated circuit mounted on the package body; a first signal transmission unit connected to the first integrated circuit; a signal via connected to the first signal transmission unit and including a slab line and a trough line; and a second signal transmission unit connected to the signal via. The technology of the present research can transmit ultra broadband signals by minimizing discontinuity of signals appearing during vertical transition that occurs in the course of a signal transmission to/from an external circuit, and a fabrication method thereof.

Abstract: A semiconductor apparatus includes a substrate; and a plurality of semiconductor thin films formed on said substrate, each of said semiconductor thin films having a pn-junction, and electrodes of p-type and n-type for injecting carriers to the pn-junction, wherein said semiconductor thin films are formed so that all or a part of said pn-junctions are connected serially. As different from a semiconductor thin film constituted of a single pn-junction, the light emission with the invented semiconductor apparatus is the summation of the light emission intensities of the entire pn-junctions, so that the light emitting intensity can be increased largely.

Abstract: A circuit module includes an electronic component, a ceramic multilayer substrate and a resin wiring substrate. The ceramic multilayer substrate is provided with a wiring layer disposed on top thereof and a cavity in which the electronic component is mounted, wherein a space between the electronic component and the cavity is filled with a thermosetting resin and a surface of the filled cavity is planarized. The resin wiring substrate has an insulating adhesive layer disposed at one side thereof and provided with at least one opening filled with a conductive resin. The ceramic multilayer substrate and the resin wiring substrate are bonded by the insulating adhesive layer, and the wiring layer on the ceramic multilayer substrate is electrically connected with the conductive resin.

Abstract: An object of the present invention is to provide a semiconductor device by packaging a plurality of semiconductor chips three-dimensionally in a smaller thickness, with a smaller footprint, at the lower cost without using any other components and through a simpler manufacturing process of the semiconductor device than with the conventional methods. A flip chip packaging structure is formed by directly connecting a first semiconductor chip (101) reduced in thickness by back grinding and a substrate (105) via a bump electrode (102) to a wiring pattern (106). Also, a second semiconductor chip (103) is formed with an electrode (104) that is higher than the sum of the thickness of the first semiconductor chip (101) and the height of the electrode (102), and the electrode (104) is directly connected to the wiring pattern (106) on the substrate (105), whereby the most-compact three-dimensional semiconductor packaged device is produced.

Abstract: A semiconductor package comprises a base substrate with a semiconductor die mounted on a top side of the base substrate and an interposer substrate mounted on top of the die. The bottom side of the interposer substrate can be electrically coupled to the top side of the base substrate through vertical connectors. The top side of the interposer substrate is substantially exposed and comprises input/output (I/O) terminals for the mounting of additional electronic components. The base and interposer substrates can be configured with I/O terminals such that components mounted on the substrates can be electrically coupled through the vertical connectors. The base substrate also can be electrically coupled to an additional electronic component, such as a printed circuit board. Electrical connections can be “wrapped around” from the base substrate to the top of the interposer substrate. The vertical connectors can be positioned along multiple sides of the package.

Abstract: A multi-layer electronic package having polymeric tape layers, where at least one of the polymeric tape layers has a via, through hole, or aperture therein to pass wiring between the layers. This enables a balance of package size, adhesive thickness, chip access, inventory management, package width, JEDEC ball out, and die exposure. The polymeric tape layers have surface circuits (e.g., leads, pads, and wiring) located on the surface.

Abstract: A chip package comprises a first chip having a first side and a second side, wherein said first chip comprises a first pad, a first trace, a second pad and a first passivation layer at said first side thereof, an opening in said first passivation layer exposing said first pad, said first trace being over said first passivation layer, said first trace connecting said first pad to said second pad; a second chip having a first side and a second side, wherein said second chip comprises a first pad at said first side thereof, wherein said second side of said second chip is joined with said second side of side first chip; a substrate joined with said first side of said first chip or with said first side of said second chip; a first wirebonding wire connecting said second pad of said first chip and said substrate; and a second wirebonding wire connecting said first pad of said second chip and said substrate.

Abstract: A multi-package module that includes a multi-layer interconnect structure, a housing structure attached to the multi-layer interconnect structure, and a plurality of integrated circuit packages inserted into slots in the housing structure, and placed into contact with the multi-layer interconnect structure. The integrated circuit packages can be removed from the slots in the housing structure, thereby enabling testing and/or replacement of the integrated circuit packages.

Abstract: A semiconductor device comprising a semiconductor pellet mounted on a pellet mounting area of the main surface of a base substrate, in which first electrode pads arranged on the back of the base substrate are electrically connected to bonding pads arranged on the main surface of the semiconductor pellet. The base substrate is formed of a rigid substrate, and its first electrode pads are electrically connected to the second electrode pads arranged on its reverse side. The semiconductor pellet is mounted on the pellet mounting area of the main surface of the base substrate, with its main surface downward, and its bonding pads are connected electrically with the second electrode pads of the base substrate through bonding wires passing through slits formed in the base substrate.