Abstract: Power line patterns are, together with a ground pattern, provided separately from control line patterns. The power line pattern is formed at first and second major surfaces of a circuit board. When the circuit board is viewed in plan view, the power line pattern and the power line pattern form a line structure in which the power line pattern and the power line pattern are in parallel with and opposite to each other and the power line pattern is positioned under the power line pattern. The circuit board includes a dielectric between the power line pattern and the power line pattern. These together form an equivalent capacitor and the magnetic flux induced by the current flowing through the power line pattern and the magnetic flux induced by the current flowing through the power line pattern cancel each other out.

Abstract: A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

Abstract: A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that may vary with respect to each other. During operation, the primary circuit controls input of energy to the primary winding of the transformer. The secondary circuit receives the energy through the secondary winding and uses it to produce an output voltage to power a load. The secondary circuit receives and/or generates state information at one of multiple different levels. The secondary circuit controls a flow of current through the secondary winding to convey the state information as feedback to the primary circuit. The primary circuit analyzes a voltage at a node of the primary winding to receive the feedback.

Abstract: Integrated LED and LED driver units and methods for fabricating integrated LED and LED driver units and products with a plurality of integrated LED and LED driver units are provided. In an embodiment, a method for fabricating an integrated LED and LED driver includes forming an LED driver in a first substrate, wherein the first substrate is a semiconductor substrate. The method include forming a bond pad over a top surface of the semiconductor substrate and electrically connected to the LED driver. Also, the method includes forming an LED on a second substrate. Further, the method includes directly coupling the LED to the bond pad.

Abstract: A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that may vary with respect to each other. During operation, the primary circuit controls input of energy to the primary winding of the transformer. The secondary circuit receives the energy through the secondary winding and uses it to produce an output voltage to power a load. The secondary circuit receives and/or generates state information at one of multiple different levels. The secondary circuit controls a flow of current through the secondary winding to convey the state information as feedback to the primary circuit. The primary circuit analyzes a voltage at a node of the primary winding to receive the feedback.

Abstract: A power adapter package comprises a power conversion module, an input board assembly comprising terminals for receiving power from an input source and delivering power to the input of the power conversion module, an output board assembly for receiving power from the output of the power conversion module and delivering power to a load via output terminations, a signal isolator comprising a bridge board spanning a distance between the input board and the output board, a case comprising top and bottom covers, and end cap assemblies for supporting and insulating input and output terminations. The bridge board may comprise a multilayer substrate comprising galvanically isolated and magnetically coupled transformer windings. The input and output boards may be soldered to contacts formed along a peripheral edge of the power conversion module.

Abstract: An electronic board, in particular for a power electronics circuit such as a converter, comprises: a planar substrate having a first side and a second side opposite the first side; at least two magnetic core elements, called the first elements, arranged on the first side of the substrate and each having at least two legs passing through the substrate; and at least two windings, arranged around at least one leg of each first magnetic core; wherein: it also comprises a second magnetic core element in the form of a plate, arranged on the second side of the substrate and in contact with respective ends of the legs of at least two first elements; the first elements, the windings and the second element forming at least two mutually decoupled magnetic circuits.

Abstract: A power conversion device has a power module that switches the ON/OFF state of a switching element and converts and outputs input power, a metal housing that houses the power module, and a conductive member connected to the housing. The conductive member is connected to the housing at a position having a length of n?/4 from the open end. More specifically, “n” is an odd number of 1 or greater, “?” is the wavelength of noise generated by switching the switching element ON or OFF.

Abstract: The present disclosure provides one embodiment of a stacked semiconductor device. The stacked semiconductor device includes a first substrate; a first bond pad over the first substrate; a second substrate including a second electrical device fabricated thereon; a second bond pad over the second electrical device over the second substrate, the second bond pad electrically connecting to the second electrical device; a second insulation layer over the second bond pad having a top surface, the second insulation layer being bonded toward the first bond pad of the first substrate; and a through-substrate-via (“TSV”) extending from a surface opposite to the first bond pad through the first substrate and through the top surface of the second insulation layer to the second bond pad.

Abstract: A microelectronic unit includes a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can include a microelectronic element having a bottom surface adjacent the inner surface, a top surface remote from the bottom surface, and a plurality of contacts at the top surface. The microelectronic element can include terminals electrically connected with the contacts of the microelectronic element. The microelectronic unit can include a dielectric region contacting at least the top surface of the microelectronic element. The dielectric region can have a planar surface located coplanar with or above the front surface of the carrier structure. The terminals can be exposed at the surface of the dielectric region for interconnection with an external element.

Abstract: A semiconductor package includes a package board, a pellet provided over the package board, and a protection member covering the package board and the pellet and including a hole penetrating the protection member.

Abstract: Embodiments for multi-chip and multi-substrate reconstitution based packaging are provided. Example packages are formed using substrates from a reconstitution. substrate panel or strip. The reconstitution substrate panel or strip may include known good substrates of same or different material types and/or same of different layer counts and sizes. As such, different combinations of reconstitution substrates and chips can be used within the same package, thereby allowing substrate customization according to semiconductor chip block(s) and types contained in the package.

Abstract: Embodiments of the invention relate to a method and system for magnetic self-assembly (MSA) of one or more parts to another part. Assembly occurs when the parts having magnet patterns bond to one another. Such bonding can result in energy minima. The magnetic forces and torques—controlled by the size, shape, material, and magnetization direction of the magnetic patterns cause the components to rotate and align. Specific embodiments of MSA can offer self-assembly features such as angular orientation, where assembly is restricted to one physical orientation; inter-part bonding allowing assembly of free-floating components to one another; assembly of free-floating components to a substrate; and bonding specificity, where assembly is restricted to one type of component when multiple components may be present.

Abstract: A semiconductor device including a semiconductor die in a die stack under-filled with a film. Once the semiconductor die are formed, they may be stacked and interconnected. The interconnection may leave a small space between semiconductor die in the die stack. This space is advantageously completely filled using a vapor deposition process where a coating is deposited as a vapor which flows over all surfaces of the die stack, including into the spaces between the die in the stack. The vapor then deposits on the surfaces between and around the die and forms a film which completely fills the spaces between the die in the die stack. The material used in the vapor deposition under-fill process may for example be a member of the parylene family of polymers, and in embodiments, may be parylene-N.

Abstract: There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

Abstract: An embedded integrated circuit package-on-package system is provided forming a first integrated circuit package system, forming a second integrated circuit package system, and mounting the second integrated circuit package system over the first integrated circuit package system with the first integrated circuit package system, the second integrated circuit package system, or a combination thereof being an embedded integrated circuit package system or an embedded stacked integrated circuit package system.

Abstract: Described herein is an electronic device in which one or more planar interconnect structure are interposed between two substrates each incorporating a hybrid circuit. The planar interconnect structure has a plurality of conductive traces formed on one of its faces for electrically connecting sets of interconnection points of each of the hybrid circuits.

Abstract: An integrated circuit (IC) package with a plurality of chip capacitors placed on a surface of a die is disclosed. The chip capacitors may be placed on top of the die with an interposal substrate layer. Placing chip capacitors on top of the die may reduce the size of the packaging substrate required. One or more wires may be used to connect the chip capacitors on the interposal layer to the packaging substrate. The IC package may include a lid and a thermal interface material (TIM) placed on top of the die. The lid may be shaped such that a protruding portion of the lid contacts the die directly through the TIM to improve heat dissipation.

Abstract: Disclosed herein are various embodiments of widebody coil isolators containing multiple coil transducers, where integrated circuits are not stacked vertically over the coil transducers. The disclosed coil isolators provide high voltage isolation and high voltage breakdown performance characteristics in small packages that provide a high degree of functionality at a low price.

Abstract: There are constituted by a tab on which a semiconductor chip is mounted, a sealing portion formed by resin-sealing the semiconductor chip, a plurality of leads each having a mounted surface exposed to a peripheral portion of a rear surface of the sealing portion and a sealing-portion forming surface disposed on an opposite side thereto, and a wire for connecting a pad of the semiconductor chip and a lead, wherein the length between inner ends of the sealing-portion forming surfaces of the leads disposed so as to oppose to each other is formed to be larger than the length between inner ends of the mounted surfaces. Thereby, a chip mounting region surrounded by the inner end of the sealing-portion forming surface of each lead can be expanded and the size of the mountable chip is increased.

Abstract: A substrate for mounting a light-emitting element, containing a substrate main body having a mounting surface on which a light-emitting element is to be mounted, a reflection layer formed on a part of the mounting surface of the substrate main body and containing silver to reflect light emitted from the light-emitting element, and a vitreous insulating layer formed on the reflection layer, wherein the vitreous insulating layer contains a glass containing SiO2, at least one of Al2O3 and B2O3, and at least one member selected from Li2O, Na2O and K2O, wherein (Li2O+Na2O+K2O)—Al2O3 is from ?20 to 1.5% and Si02+3×Al2O3 is at most 90% calculated using the mol % of each of said SiO2, Al2O3 B2O3, Li2O, Na2O and K2O in said glass.

Abstract: A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as a joint region between a collector trace and a collector electrode on a chip mounted substrate and an emitter electrode joint region as a joint region between an emitter trace and an emitter electrode are located at a same position in an up-and-down direction and are adjacent in a right-and-left direction at an interval of 2 mm or more and 4 mm or less.

Abstract: Even when only one of semiconductor packages mounted by carrying out infrared reflow is defective, it is required to carry out infrared reflow again to dismount this defective semiconductor package from a mounting board. At this time, stress of heat is also applied to the other non-defective semiconductor packages. For this reason, if infrared reflow is carried out beyond a number of times of infrared reflow specified for non-defective semiconductor packages, the operation of each non-defective semiconductor package cannot be assured. In this case, it is inevitable to discard the semiconductor packages together with the mounting board. To solve this problem, a magnetic material is passed through a hole penetrating a protection member and a package board and the relevant semiconductor package is fixed over a mounting board by this magnetic material. To supply power to the semiconductor package, electromagnetic induction by coils provided in the package board and the mounting board is used.

Abstract: An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress may be escaped. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board served as current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and crack of the cover plate.

Abstract: A semiconductor device has a first semiconductor die mounted to a first contact pad on a leadframe or substrate with bumps. A conductive pillar is formed over a second semiconductor die. The second die is mounted over the first die by electrically connecting the conductive pillar to a second contact pad on the substrate with bumps. The second die is larger than the first die. An encapsulant is deposited over the first and second die. Alternatively, the conductive pillars are formed over the substrate around the first die. A heat sink is formed over the second die, and a thermal interface material is formed between the first and second die. An underfill material is deposited under the first semiconductor die. A shielding layer is formed between the first and second die. An interconnect structure can be formed over the second contact pad of the substrate.

Abstract: Provided is a semiconductor package including a first package and a second package. The first package includes a first substrate having a first front side and a first back side opposing the first front side. The first package further includes a first semiconductor chip on the first front side and an external connection member on the first semiconductor chip. The external connection member may be configured to electrically connect the first semiconductor chip to an external device. The second package includes a second substrate having a second back side facing the first back side of the first substrate and a second front surface opposing the second back side. The second package includes a second semiconductor chip on the second front side. The semiconductor package further includes an internal connection member between the first back side and the second back side to electrically connect the first package to the second package.

Abstract: A semiconductor chip stack includes a first chip and a second chip. The first chip includes a first circuit formed in the first chip with a first integration density, and the second chip includes a second circuit in the second chip with a second integration density smaller than the first integration density. The first chip further includes at least a through-silicon via formed therein for electrically connecting the first chip and the second chip.

Abstract: Described herein is an electronic device in which one or more planar interconnect structure are interposed between two substrates each incorporating a hybrid circuit. The planar interconnect structure has a plurality of conductive traces formed on one of its faces for electrically connecting sets of interconnection points of each of the hybrid circuits.

Abstract: The package includes a substrate, a first chip, a second chip, multiple first bumps and multiple second bumps. The substrate has a first region and a second region. The first region is substantially coplanar with the second region. The first bumps connect the first chip and the second chip. The second bumps connect the first chip and the second region of the substrate, wherein the second chip is over the first region of the substrate. The second bumps have a height greater than that of the first bumps plus the second chip. The substrate does not have an opening accommodating the second chip. The first bumps may be gold bumps or solder bumps. The second bumps may be solder bumps.

Abstract: An integrated circuit package system includes: providing a lead terminal; forming a dummy lead near the lead terminal; positioning a base integrated circuit adjacent the lead terminal and the dummy lead; connecting a die connector to the base integrated circuit and the dummy lead; mounting a stackable integrated circuit over the base integrated circuit; and connecting another of the die connector to the stackable integrated circuit and the dummy lead.

Abstract: Methods and apparatus to provide die backside metallization and/or surface activated bonding for stacked die packages are described. In one embodiment, an active metal layer of a first die may be coupled to an active metal layer of a second die through silicon vias and/or a die backside metallization layer of the second die. Other embodiments are also described.

Abstract: Disclosed herein are various embodiments of narrowbody coil isolators containing multiple coil transducers, where integrated circuits are not stacked vertically over the coil transducers. The disclosed coil isolators provide high voltage isolation and high voltage breakdown performance characteristics in small packages that provide a high degree of functionality at a low price.

Abstract: A memory circuit arrangement and fabrication method thereof are presented in which the parts of the memory circuit arrangement are situated on two different substrates. An integrated memory cell array is situated on one substrate. An integrated control circuit that controls access to the memory cells is situated on the other (logic circuit) substrate. The control circuit controls sequences when reading, writing or erasing content of a memory cell. The logic circuit substrate also contains a CPU and encryption coprocessor. The memory circuit contains a sense amplifier, with the aid of which the memory state of a memory cell can be determined, and a decoding circuit that selects a word or bit line.

Abstract: A power module having three unit power modules and a control circuit board including a gate drive circuit are set up side by side and mounted on a heat exchanger. A pair of positive and negative direct current terminals for connecting the smoothing capacitor and a plurality of alternating current terminals for inputting and outputting polyphase alternating current are integrally-molded into a power module case of the power module. A plurality of control pins for providing switching devices mounted on the unit power modules with control signals are set up on the opposite side of the side where the direct current terminals and the alternating current terminals are set up, which is figured as located in the right of the drawing. The control pins of the switching devices of the unit power modules and the gate signal output terminals of the control circuit board are wire-bonded. The smoothing capacitor is mounted on the side or top of the power module.

Abstract: An interconnect assembly for use in high frequency applications includes an interconnect structure, a plurality of electronic die disposed on the interconnect structure, and an encapsulant at least partially surrounding the plurality of electronic die. The interconnect structure includes a plurality of layers. The interconnect assembly further includes a thermal management layer disposed within a portion of the encapsulant and proximate to the plurality of electronic die and a controlled impedance interconnect connected to the interconnect structure and extending to a peripheral surface of the interconnect assembly.

Abstract: Disclosed is a method of manufacturing a hybrid structure of multi-layer substrates. The method comprises steps of: separating a border district of at least one metal layer connecting with a border district of the corresponding dielectric layer from adjacent metal layers and adjacent dielectric layers for each multi-layer substrate and connecting a separated border of a metal layer of one multi-layer substrate with a separated border district of a metal layer of another multi-layer substrate to form a connection section. The hybrid structure comprises at least a first multi-layer substrate and a second multi-layer substrate. At least one first metal layer is connected with at least one second metal layer to form a connection section.

Abstract: In constructing a multi-die semiconductor device, a plurality of semiconductor die are provided. Each die is probe tested when it is part of a wafer. Flat contacts are connected to each die when it is part of a wafer. After wafer sawing, each die is tested in a test socket, using the contacts connected thereto. The die are then packaged in stacked relation to form the multi-die semiconductor device.

Abstract: A multi-substrate region-based package and a method for fabricating the same are provided. An active surface of a chip is divided into a plurality of functional regions, and each of the functional regions is electrically connected to a corresponding substrate via bonding wires. Each of the functional regions has a separate system, and the circuit layout thereof is not limited by the substrate or other systems but can be flexibly and independently designed, thereby allowing the package to be made smaller and thinner. Each set of the functional region and its corresponding substrate functions as an independent unit, such that the substrates are not affected by each other, thereby providing good compatibility, improved reliability and reduced packaging area.

Abstract: Methods and devices for multi-chip stacks are shown. A method is shown that assembles multiple chips into stacks by stacking wafers prior to dicing into individual chips. Methods shown provide removal of defective chips and their replacement during the assembly process to improve manufacturing yield.

Abstract: A semiconductor memory device includes a first substrate having at least one string including a first select transistor, a second select transistor, and first memory cells connected in series between the first and second select transistors of the first substrate. The semiconductor memory device further includes a second substrate having at least one string including a first select transistor, a second select transistor, and second memory cells connected in series between the first and second select transistors of the second substrate. The number of the first memory cells of the at least one string of the first substrate is different from a number of the second memory cells of the at least one string of the second substrate. For example, the number of second memory cells may be less than the number of first memory cells.

Abstract: Provided is a semiconductor package including a first package and a second package. The first package includes a first substrate having a first front side and a first back side opposing the first front side. The first package further includes a first semiconductor chip on the first front side and an external connection member on the first semiconductor chip. The external connection member may be configured to electrically connect the first semiconductor chip to an external device. The second package includes a second substrate having a second back side facing the first back side of the first substrate and a second front surface opposing the second back side. The second package includes a second semiconductor chip on the second front side. The semiconductor package further includes an internal connection member between the first back side and the second back side to electrically connect the first package to the second package.

Abstract: In a through-via-hole path of semiconductor chips stacked in N stages, repeater circuits are provided in the respective semiconductor chips. For example, a signal transmitted from an output buffer circuit of the semiconductor chip is transmitted to an input buffer circuit of the semiconductor chip via the repeater circuits of the respective semiconductor chips. The respective repeater circuits can isolate impedances on input sides and output sides, and therefore, a deterioration of a waveform quality accompanied by a parasitic capacitance parasitic on the through-via-hole path of the respective semiconductor chips can be reduced and a high speed signal can be transmitted.

Abstract: A memory circuit arrangement and fabrication method thereof are presented in which the parts of the memory circuit arrangement are situated on two different substrates. An integrated memory cell array is situated on one substrate. An integrated control circuit that controls access to the memory cells is situated on the other (logic circuit) substrate. The control circuit controls sequences when reading, writing or erasing content of a memory cell. The logic circuit substrate also contains a CPU and encryption coprocessor. The memory circuit contains a sense amplifier, with the aid of which the memory state of a memory cell can be determined, and a decoding circuit that selects a word or bit line.

Abstract: Multi-stack semiconductor packages and application technologies are provided. The multi-stack semiconductor package may include stacked semiconductor packages which may include a topmost semiconductor package and a bottommost semiconductor package. Each of the unit semiconductor packages may include a substrate, a semiconductor chip formed on the substrate, a molding material filled around the semiconductor chip on the substrate, and an adhesive layer formed on the semiconductor chip and the molding material. The semiconductor chip and the substrate of a semiconductor package may each include conductive vias providing an electrical connection between the semiconductor packages. The substrate of the upper semiconductor package stacked in an upper portion may be directly adhered onto the adhesive layer of the lower semiconductor package stacked in a lower portion.

Abstract: An integrated circuit package includes a cover plate disposed on a substrate mounted with an integrated circuit chip thereon. The chip is formed with first solder pads coupled respectively and wiredly to pin terminals on the substrate, and second solder pads coupled respectively and wiredly to pinhole terminals in the cover plate, and includes a main circuit unit, a pin transmission unit interconnecting electrically first ports of a main circuit unit and the first solder pads, a pinhole transmission unit interconnecting electrically second ports of the main circuit unit, and a control unit coupled to the pin and pinhole transmission units, and operable to control operation of the pin and pinhole transmission units such that each first port is coupled to a selected first solder pad through the pin transmission unit and that each second port is coupled to a selected second solder pad through the pinhole transmission unit.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor chip included in the semiconductor device includes a pillar-shaped terminal and a pad-shaped terminal in a terminal region. The pillar-shaped terminal is exposed at a first surface of a chip substrate in the terminal region and the pad-shaped terminal is exposed at a second surface of the chip substrate in the terminal region, where the first surface and the second surface of the chip substrate in the terminal region face oppositely from each other.

Abstract: A semiconductor device according to a preferred embodiment of the present invention is a semiconductor device including a main substrate and one or more sub substrates, and the semiconductor device includes first heat generating devices mounted on the sub substrates, sub-substrate heatsinks mounted to the first heat generating devices, and a main-substrate heatsink mounted to the main substrate, wherein the sub-substrate heatsinks and the main-substrate heatsink are secured to each other, such that there is a predetermined positional relationship between the sub substrates and the main substrate.

Abstract: A semiconductor device having a first semiconductor chip with an SDRAM and a second semiconductor chip with a an MPU controlling the SDRAM. The contour size of the semiconductor device is reduced to a smaller size without impairing the testability of the first semiconductor chip. The two semiconductor chips are stacked over the top surface of an interconnect substrate and sealed in a molding resin, thus forming an SiP (System-in-Package). First terminals electrically connected with the second chip are arranged as external terminals of the SiP on the outer periphery of the bottom surface of the interconnect substrate. Plural second electrodes electrically connected with interconnects, which electrically connect the two chips, are mounted as terminals for testing of the SDRAM. The second electrodes are located more inwardly than the innermost row of the first external electrodes on the bottom surface of the interconnect substrate.

Abstract: Described herein is an electronic device in which one or more planar interconnect structure are interposed between two substrates each incorporating a hybrid circuit. The planar interconnect structure has a plurality of conductive traces formed on one of its faces for electrically connecting sets of interconnection points of each of the hybrid circuits.

Abstract: A first and a second substrate are bonded together to thereby form a unitary hybrid substrate. Predefined portions of the first substrate are removed to form openings in the first substrate through which surface regions of the second substrate are exposed. A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate but not from exposed surfaces of the first substrate. The epitaxial silicon formed from the exposed surfaces of the second substrate has the same crystalline orientation as the second substrate.