Abstract: A laser assembly comprising: a semiconductor laser with a fast gain medium, wherein the gain relaxation time of the gain medium is smaller than the round-trip time in a standing wave cavity; a DC source coupled to the standing wave cavity; and an AC injection device for injecting an electrical AC signal within a range and/or within an integer multiple of the range into the standing wave cavity, the range within ±1% of the natural round-trip frequency in the standing wave cavity, comprising at least a first and second electric contact section extending along a first longitudinal side of the longitudinal extension of the standing wave cavity, the AC injection device coupled to the first and/or second electric contact section such that the complex amplitude of the electrical AC signal differs for the first and second longitudinal electric contact section.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure, the method includes forming a buffer layer over a substrate. An active layer is formed on the buffer layer. A top electrode is formed on the active layer. An etch process is performed on the buffer layer and the substrate to define a plurality of pillar structures. The plurality of pillar structures include a first pillar structure laterally offset from a second pillar structure. At least portions of the first and second pillar structures are spaced laterally between sidewalls of the top electrode.

Abstract: A display device with a high luminance, a high contrast, and low power consumption is provided. The display device includes a transistor, a light-emitting element, a coloring layer, a phosphor layer, a first electrode, and a second electrode. The light-emitting element is electrically connected to the first electrode and the second electrode, the first electrode is electrically connected to the transistor, and the second electrode is positioned on the same plane as the first electrode. The coloring layer is positioned over the light-emitting element, the phosphor layer is positioned between the light-emitting element and the coloring layer, and the phosphor layer, the light-emitting element, and the coloring layer include a region in which they overlap with one another. The light-emitting element includes a light-emitting diode chip, and the phosphor layer has a function of emitting light of a complementary color of an emission color of the light-emitting element.

Abstract: A driver circuit, for generating narrow electrical pulses of high repetition rate with high peak current and low after pulse ringing to drive an optical load, may include a source, a first circuit path, and a second circuit path. The first circuit path may be connected to the source and may include inductive elements and a switch. The switch being in a closed state may charge current in the inductive elements through the first circuit path. The second circuit path may connect to the optical load and may be connected to the source. The second circuit path may include the inductive elements and a capacitive element in series with the optical load. The switch transitioning from the closed state to an open state may discharge current from the inductive elements through the second circuit path to provide an electrical pulse to the optical load.

Abstract: A lighting device including at least one first light source configured to emit a visible light through a first light emitting surface, at least one second light source spaced apart from the first light source and configured to emit light having a wavelength for sterilization through a second light emitting surface, and a hosing having a bottom portion, on which the first and second light sources are disposed, and at least one sidewall portion connected to the bottom portion to enclose the first light source and the second light source in one common area, in which the first and second light emitting surfaces face substantially the same direction, and the first light emitting surface and the second light emitting surface are disposed at a different elevation from the bottom portion of the housing.

Abstract: Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

Abstract: A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.

Abstract: The present disclosure provides a light-emitting device that is able to output light with a shorter pulse. A light-emitting device according to the present disclosure includes a capacitor, one or more solid-state light-emitting elements that emit light when electric power is supplied from the capacitor, and a semiconductor switch that controls electric power supply from the capacitor to the solid-state light-emitting element. Furthermore, the solid-state light-emitting element is placed on an outer face of the capacitor, the semiconductor switch is placed on the outer face of the capacitor or provided inside the capacitor, and the capacitor includes a connecting electrode between outer electrodes, the connecting electrode allowing the solid-state light-emitting element and the semiconductor switch to be connected in series.

Abstract: Micro light-emitting diode displays having colloidal or graded index quantum dot films and methods of fabricating micro light-emitting diode displays having colloidal or graded index quantum dot films are described. In an example, a micro light emitting diode pixel structure includes a plurality of micro light emitting diode devices in a dielectric layer. A transparent conducting oxide layer is above the dielectric layer. A material layer is on the transparent conducting oxide layer, the material layer having a portion with a hydrophilic surface and a portion with a hydrophobic surface, the hydrophilic surface over one of the plurality of micro light emitting diode devices. A color conversion film is on the hydrophilic surface of the material layer and over the one of the plurality of micro light emitting diode devices.

Abstract: Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

Abstract: A display apparatus includes a first thin-film transistor including a semiconductor layer arranged on a substrate, a driving gate electrode arranged on the semiconductor layer, and a first electrode arranged between the substrate and the semiconductor layer, a second thin-film transistor transmitting a data signal received through a data line to the first thin-film transistor according to a first scan signal received through a first scan line, and a third thin-film transistor transmitting a first voltage to the first electrode according to a second scan signal received through a second scan line.

Abstract: A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 ?

Abstract: A modulator integrated laser has a laser portion for emitting light and a modulation portion for modulating the light by an electric field absorption effect. The modulator integrated laser has a semiconductor substrate of a conductivity type in which the laser portion and the modulation portion are integrated. An impedance element with inductance and capacitance connected in parallel. The impedance element has a self-resonant characteristic exhibiting the highest impedance at a self-resonant frequency. The laser portion has first and second electrodes for a direct current voltage to be applied therebetween. The modulation portion has third and fourth electrodes for an alternate current voltage to be applied therebetween. The second electrode and the fourth electrode are electrically connected to each other through the semiconductor substrate. The impedance element is connected in series to the first electrode to minimize a flow of an alternate current.

Abstract: Optical interconnection assemblies, glass interconnection substrates, and methods for making optical connections are disclosed. In one embodiment, an optical interconnection assembly includes a base substrate, a substrate optical waveguide coupled to the base substrate, the substrate optical waveguide having an end surface, an optical chip comprising an optical coupling surface, and a glass interconnection substrate. The glass interconnection substrate includes a first end optically coupled to the end surface of the substrate optical waveguide, a second end optically coupled to the optical coupling surface of the optical chip, and a curved portion disposed between the first end and the second end. The glass interconnection substrate further includes an optical waveguide at least partially positioned within the curved portion.

Abstract: A mounting pedestal is disposed on a wheeled vehicle and a light emitter is mounted on the mounting pedestal. The mounting pedestal includes a metal layer and an insulating layer stacked on the metal layer. The insulating layer has a major surface facing in a direction of travel of the wheeled vehicle and a heat escape port in which solder that joins the light emitter and the metal layer is disposed. The mounting pedestal has a step which arranges the major surface into a plurality of major surfaces.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

Abstract: A light emitting element includes: a semiconductor stack structure that includes a light emitting part, and a light receiving part that receives light propagating in a lateral direction through a semiconductor layer from the light emitting part, wherein the light emitting part and the light receiving part share a quantum layer; and a light reflection layer that covers ? or more of a lateral surface of the quantum layer in the light receiving part.

Abstract: Embodiments according to the present disclosure relate to an optical transmitting device and an optical receiving device which can minimize the alignment error between the light source and the photodetector on the substrate, miniaturize the devices, and require no separate guide member reducing manufacturing costs, while satisfying the design requirements for sub-miniaturization, and performing optical transmission and reception more efficiently.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

Abstract: According to example embodiments, a photoelectric conversion device includes a first electrode including a light-receiving surface, a second electrode spaced apart from the first electrode and facing the first electrode, and an auxiliary layer between the second electrode and an exciton producing layer. The first electrode may be on the second electrode. The exciton producing layer may be between the first electrode and the second electrode. The exciton producing layer may be spaced apart from the second electrode by a distance corresponding to one of a crest and a trough of a standing wave of light to be converted into electricity.

Abstract: Provided is a method for manufacturing a microchannel resonator capable of measuring a mass and characteristics of an object using a principle in which a resonance frequency is changed according to a mass of a moving material, the method including: providing a silicon substrate; forming a cavity channel inside the silicon substrate; forming a hollow silicon oxide structure on the inner wall surface of the cavity channel by oxidizing the inner wall surface of the cavity channel; and partially removing the periphery of the hollow silicon oxide structure such that the hollow silicon oxide structure can resonate with respect to the silicon substrate.

Abstract: Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.

Abstract: A planar lightwave circuit that can be optically coupled with an external device with low optical loss, while also providing low-power functional control over an optical signal propagating through the PLC is disclosed. The PLC includes a high-contrast waveguide region in a stress-inducing (SI) phase shifter is formed such that it can control the phase of the optical signal. The high-contrast-waveguide region is optically coupled to a low-contrast-waveguide region via a spotsize converter, thereby enabling optical coupling to off-chip devices with low optical loss. Formation of the SI phase shifter in a high-contrast-waveguide region enables improved responsivity and phase control, reduced voltage, and smaller required chip real estate. As a result, the present invention enables lower-cost and higher-performance PLC systems.

Abstract: Embodiments are provided for a waveguide polarizer comprising a series of bends. The waveguide polarizer is suitable for used in optical waveguide devices or circuits, where a polarized light is required, such as for single polarization output. The polarizer design is independent of the function of the optical devices. In an embodiment, an optical polarizer comprises an optical waveguide configured to propagate light at a designated polarization mode, and comprising a bend in a same plane of the propagated light. The bend has a geometry configured to contain in the optical waveguide the designated polarization mode of the propagated light and radiate outside the optical waveguide a second polarization mode of the propagated light.

Abstract: Embodiments are provided for a waveguide polarizer comprising a series of bends. The waveguide polarizer is suitable for used in optical waveguide devices or circuits, where a polarized light is required, such as for single polarization output. The polarizer design is independent of the function of the optical devices. In an embodiment, an optical polarizer comprises an optical waveguide configured to propagate light at a designated polarization mode, and comprising a bend in a same plane of the propagated light. The bend has a geometry configured to contain in the optical waveguide the designated polarization mode of the propagated light and radiate outside the optical waveguide a second polarization mode of the propagated light.

Abstract: A vibrator includes a frame, a swing unit, and an elastic member. The swing unit is disposed within the frame and holds a magnet. The elastic member connects the swing unit and the frame. The swing unit is movable with respect to the frame while deforming the elastic member. The frame, the swing unit, and the elastic member are integrally molded with each other.

Abstract: An electrical device with light-responsive layers is disclosed. One or more electrically conducting stripes, each insulated from each other, are deposited on a smooth surface of a substrate. Then metal oxide layers, separated by a composite diffusion layer, are deposited. On top of the topmost metal oxide layer another set of elongated conductive strips are disposed in contact with the topmost metal oxide layer such that junctions are formed wherever the top and bottom conducting stripes cross. The resulting device is light responsive only when a certain sign of bias voltage is applied and may be used as a photodetector. An advantage that may be realized in the practice of some disclosed embodiments of the device is that this device may be formed without the use of conventional patterning, thereby significantly reducing manufacturing difficulty.

Abstract: A white LED assembly includes a string of series-connected blue LED dice mounted on a substrate. The substrate has a plurality of substrate terminals. A first of the substrate terminals is coupled to be a part of first end node of the string. A second of the substrate terminals is coupled to be a part of an intermediate node of the string. A third of the substrate terminals is coupled to be a part of a second end node of the string. Other substrate terminals may be provided and coupled to be parts of corresponding other intermediate nodes of the string. A single contiguous amount of phosphor covers all the LED dice, but does not cover any of the substrate terminals. In one example, the amount of phosphor contacts the substrate and has a circular periphery. All the LEDs are mounted to the substrate within the circular periphery.

Abstract: A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

Abstract: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer.

Abstract: A first transistor in which an image signal is input to one of a first source and a first drain through an image signal line and a first scan signal is input to the first gate through a first scan signal line; a capacitor whose one of two electrodes is electrically connected to the other of the first source and the first drain of the first transistor; a second transistor in which one of a second source and a second drain is electrically connected to the other of the first source and the first drain of the first transistor and a second scan signal is input to a second gate through a second scan signal line; and a liquid crystal element whose first electrode is electrically connected to the other of the second source and the second drain of the second transistor.

Abstract: A display substrate includes a base substrate; a first metal pattern disposed on the base substrate and comprising a first signal line and a first electrode electrically connected to the first signal line; and a buffer pattern disposed at a corner between a sidewall surface of the first metal pattern and the base substrate.

Abstract: An organic light-emitting display apparatus having improved durability and image quality may include a substrate; a first electrode formed on the substrate; a first pixel definition layer formed to cover at least one lateral surface of the first electrode; a second pixel definition layer formed so as to be spaced apart from at least an upper surface of the first pixel definition layer; an intermediate layer formed on the first electrode and including an organic light-emitting layer; and a second electrode formed on the intermediate layer.

Abstract: Various embodiments provide materials and methods for integrating exemplary heterostructure field-effect transistor (HFET) driver circuit or thyristor driver circuit with LED structures to reduce or eliminate resistance and/or inductance associated with their conventional connections.

Abstract: A light-emitting device includes a circuit substrate including at least a pair of electrodes, an LED element electrically mounted on the circuit substrate, a phosphor plate disposed on an upper surface of the LED element, a diffuser plate disposed on an upper surface of the phosphor plate, and a white resin disposed on an upper surface of the circuit substrate and covering a peripheral side surface of the LED element, a peripheral side surface of the phosphor plate, and a peripheral side surface of the diffuser plate. The present invention makes it possible to obtain a planar light-emitting surface even with a plurality of LEDs, and also, a problem of color-ring occurrence caused by a phosphor may be less represented.

Abstract: Disclosed are an array substrate and a liquid crystal display device. The array substrate comprises a base substrate, and data lines and gate lines, which are orthogonal to each other to define a plurality of pixel units, formed in a pixel region of the base substrate, with each of the pixel units comprising a switching element, a pixel electrode and a common electrode that is overlapped with the pixel electrode. The common electrode in each of the pixel units comprises slits, and the slits have a shape of curved line and are parallel to each other so as to form a slit region in the common electrode; and the pattern profile of the pixel electrode is parallel to the profile of the slit region of the common electrode.

Abstract: A light emitting device includes a white light emitting unit including a first light source emitting a white light; a red light emitting unit including a second light source emitting a white light and a red coating member having a red fluorescent material which converts the white light from the second light source into a red light; and a green light emitting unit including a third light source emitting a white light and a green coating member having a green fluorescent material which converts the white light from the third light source into a green light. The light emitting device further includes a driver for individually driving the white, the red and the green light emitting unit.

Abstract: Materials can be prepared in a layer-by-layer fashion on a patterned first substrate and subsequently transferred to a second substrate. The transfer step can preserve the pattern of the first substrate, such that the second substrate will bear a pattern of the transferred material. The material can be an electrostatic multilayer including a light absorbing dye, such as a J-aggregating cyanine dye.

Abstract: To provide a light-emitting device including the plurality of light-emitting elements having a structure in which a light-emitting area is large and defects in patterning of light-emitting elements are suppressed. To provide a lighting device including the light-emitting device. The light-emitting device includes a first wiring provided over a substrate having an insulating surface, an insulating film provided over the first wiring, a second wiring provided over the insulating film, and a light-emitting element unit including a plurality of light-emitting elements provided over the first wiring with the insulating film provided therebetween. The plurality of light-emitting elements each include a first electrode layer having a light-blocking property, a layer containing an organic compound in contact with the first electrode layer, and a second electrode layer having a light-transmitting property in contact with the layer containing an organic compound.

Abstract: A white LED assembly includes a string of series-connected blue LED dice mounted on a substrate. The substrate has a plurality of substrate terminals. A first of the substrate terminals is coupled to be a part of first end node of the string. A second of the substrate terminals is coupled to be a part of an intermediate node of the string. A third of the substrate terminals is coupled to be a part of a second end node of the string. Other substrate terminals may be provided and coupled to be parts of corresponding other intermediate nodes of the string. A single contiguous amount of phosphor covers all the LED dice, but does not cover any of the substrate terminals. In one example, the amount of phosphor contacts the substrate and has a circular periphery. All the LEDs are mounted to the substrate within the circular periphery.

Abstract: A light source includes a substrate arranged into at least two facing surfaces which form a seam therebetween; and a lighting device with light emitting diode (LED) chips embedded therein in a linear arrangement. The LED chips generate light photons. The lighting device has a first edge and a second edge opposite to the first edge, the light photons within the lighting device that are emitted by the LED chips from a top surface of the LED chips being output from the lighting device at the second edge of the device. The lighting device is sandwiched in the seam between the two facing surfaces, the second edge of the lighting device being exposed when the seam is in an opened position.

Abstract: A light emitting device includes a number of light emitting diode dies (LEDs) mounted on a shared submount and covered with a single lens element that includes a corresponding number of lens elements. The LEDs are separated from each other by a distance that is sufficient for lens element to include separate lens elements for each LED. The separation of the LEDs and lens elements may be configured to produce a desired amount of light on a target at a predefined distance. In one embodiment, the lens elements are approximately flat type lens elements, such as Fresnel, TIR, diffractive lens, photonic crystal type lenses, prism, or reflective lens.

Abstract: A light emitting diode package includes an electrically insulated base, first and second electrodes, an LED chip, a voltage stabilizing module, and an encapsulative layer. The base has a first surface and an opposite second surface. The first and second electrodes are formed on the first surface of the base. The LED chip is electrically connected to the first and second electrodes. The voltage stabilizing module is formed on the first surface of the base, positioned between and electrically connected to the first and second electrodes. The voltage stabilizing module connects to the LED chip in reverse parallel and has a polarity arranged opposite to that of the LED chip. The voltage stabilizing module has an annular shape and encircles the first electrode. The encapsulative layer is formed on the base and covers the LED chip.

Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer.

Abstract: A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

Abstract: An apparatus comprises a substrate, a first buried layer formed over the substrate, the first buried layer comprising one or more raised mesa structures, a second buried layer formed over the first buried layer, an active layer formed over the second buried layer, and a capping layer formed over the active layer. The apparatus may further comprise a third buried layer formed over the active layer, the third buried layer comprising one or more raised mesa structures, and a fourth buried layer formed over the third buried layer. The one or more raised mesa structures of the first buried layer may be offset from the one or more raised mesa structures of the third buried layer.

Abstract: A method of fabricating a substrate free light emitting diode (LED), includes arranging LED dies on a tape to form an LED wafer assembly, molding an encapsulation structure over at least one of the LED dies on a first side of the LED wafer assembly, removing the tape, forming a dielectric layer on a second side of the LED wafer assembly, forming an oversized contact region on the dielectric layer to form a virtual LED wafer assembly, and singulating the virtual LED wafer assembly into predetermined regions including at least one LED. The tape can be a carrier tape or a saw tape. Several LED dies can also be electrically coupled before the virtual LED wafer assembly is singulated into predetermined regions including at the electrically coupled LED dies.