Abstract: An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

Abstract: A display device including light emitting elements corresponding to respective colors disposed on a substrate. Each of the light emitting elements corresponding to the respective colors has a cavity structure in which a light emission functioning layer including a light emitting layer is held between a reflecting electrode and a semi-transmitting electrode. The light emission functioning layer except for the light emitting layer is common to the light emitting elements corresponding to the respective colors.

Abstract: A display device according to the present invention includes a barrier layer formed over the transistor and a planarization layer formed over the barrier layer. The planarization layer has an opening and an edge portion of the planarization layer formed at the opening of the planarization layer is rounded. Further, a resin film is formed over the planarization layer and in the opening of the planarization layer, and the resin film also has an opening and an edge portion of the resin film formed at the opening of the resin film is rounded. A light emitting member is formed over the resin film.

Abstract: A multi-chip electronic package and methods of manufacture are provided. The structure includes a lid encapsulating at least one chip mounted on a chip carrier; at least one seal shim fixed between the lid and the chip carrier, the at least one seal shim forming a gap between pistons of the lid and respective ones of the chips; and thermal interface material within the gap and contacting the pistons of the lid and respective ones of the chips.

Abstract: A light-emitting device, including a heatsink arranged at a tip of the light-emitting device, at least one light source, in particular a light-emitting diode, arranged on an underside of the heatsink, and a reflector arranged below the heatsink for reflecting at least some of the light emitted by the at least one light source.

Abstract: An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.

Abstract: According to one embodiment, a semiconductor light emitting device wafer includes a plurality of semiconductor light emitting devices, the plurality of semiconductor light emitting devices being collectively formed, and includes a light emitting unit and a wavelength conversion unit. The light emitting unit has a first major surface and a second major surface on a side opposite to the first major surface. The wavelength conversion unit is provided on the first major surface side. The wavelength conversion unit contains a fluorescer. A thickness of the wavelength conversion unit changes based on a distribution in a surface of the wafer of at least one selected from a wavelength and an intensity of light emitted from the light emitting unit of the plurality of semiconductor light emitting devices.

Abstract: Disclosed herein is a light emitting device including: an organic layer sandwiched between a first electrode and a second electrode to serve as an organic layer including a light emitting layer for emitting monochromatic light at one location; a first light reflection boundary face provided on a side close to the first electrode to serve as a boundary face for reflecting light emitted from the light emitting layer so as to radiate the reflected light from a side close to the second electrode; and a second light reflection boundary face, a third light reflection boundary face and a fourth light reflection boundary face which are sequentially provided at positions separated away from each other in a direction from the first electrode to the second electrode on the side close to the second electrode.

Abstract: Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source.

Abstract: The present invention provides an LED bulb, which includes a light source portion including at least one LED chip); a housing including a bottom portion supporting the light source portion and a sidewall portion surrounding the light source portion, and opening at one side of a first direction; a base disposed on the other side of the first direction relative to the housing; and a light guide body disposed in a space surrounded by the sidewall portion, and including an incident surface facing the light source portion, a light-emitting surface for making the light from the incident surface emit toward the one side of the first direction, and a peripheral side surface located between the incident surface and the light-emitting surface, wherein the cross-sectional area of the peripheral side surface becomes increasingly larger from a side of the incident surface toward a side of the light-emitting surface.

Abstract: External light is reflected due to a difference in refractive indices of a black matrix and a glass substrate. When the black matrix is a black resin, there is a difference in refractive indices of the black resin and a first substrate. Also, there is a difference in refractive indices of the colored layer and the first substrate. Therefore, external light is slightly reflected. There is a problem in that the reflected light reduces contrast. A structure in which one polarizing element having dichroism is interposed between a pair of substrates is employed, and a light interference layer is provided between a color filter and a glass substrate, whereby a difference in refractive indices is moderated to reduce light reflection.

Abstract: An organic light-emitting diode display which can display independent images on both sides is described. This display can be driven with passive matrix or active matrix schemes. The invention combines a unique stacked organic diode structure and special driving schemes involving time-sequential reversed fields.

Abstract: A highly reliable light-emitting device or lighting device is provided. Further, a light-emitting device or lighting device with a high manufacturing yield is provided. Provided is a light-emitting device having a contact structure which includes a separation layer having a shape typified by a reverse tapered shape in which an outline of the bottom portion is inside an outline of an upper portion and which utilizes the difference between an amount of a light-emitting layer extending inside the outline and that of an upper electrode extending inside the outline. Further, when the outline of the separation layer which forms the contact portion has a depression and a projection, the length of the contact portion can be increased, and thus, contact resistance can be reduced.

Abstract: A red phosphor of high efficiency and a method for producing it are provided. A white light source and an illumination device that allow illumination with the pure white color using the red phosphor are also provided. In addition, a liquid crystal display device using the red phosphor and exhibiting good color reproducing performance is provided. The red phosphor contains an element A, europium (Eu), silicon (Si), carbon (C), oxygen (O) and nitrogen (N) in the ratios of the numbers of atoms of the following compositional formula (1): [Chemical Formula 1] [A(m?x)Eux][Si(9?y)Cy]OnN[12?2(n?m)/3]??compositional formula (1) where the element A is at least one of magnesium (Mg), calcium (Ca), strontium (Sr) and barium (Ba), and where m, x and n in the compositional formula (1) satisfy the relationships of 3<m<5, 0<x<1, 0<y<2 and 0<n<10 (FIG. 5A).

Abstract: Disclosed herein is a light emitting apparatus including: one or a plurality of light emitting devices each having a plurality of electrodes and each emitting light from the upper surface of the light emitting device; a plurality of terminal electrodes provided on the lower side of the light emitting devices in a positional relation with the light emitting devices and electrically connected to the electrodes of the light emitting devices; a first metal line brought into contact with the upper surfaces of the light emitting devices and one of the terminal electrodes, provided at a location separated away from side surfaces of the light emitting devices and created in a film creation process; and an insulator in which the light emitting devices and the first metal line are embedded.

Abstract: A thin film transistor (TFT) structure is implemented. This embodiment is much less sensitive than conventional TFTs to alignment errors and substrate distortion. In such a configuration, there is no need to define gate features, so the layout is simplified. Moreover, the gate layer may be patterned by several inexpensive printing or non-printing methods.

Abstract: A lighting device having a novel structure for integration of a plurality of light-emitting elements, and a manufacturing method thereof are provided. In the lighting device, a plurality of light-emitting elements is electrically connected to each other through plugs (connecting members) and a connection wiring for integration. The connection wiring is provided on a counter substrate and the plugs are provided over an element substrate or for the counter substrate. Such a connection structure enables an appropriate electrical connection between the plurality of light-emitting elements in the lighting device.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: A light emitting device includes a white light emitting unit including a first light source emitting a white light; a red light emitting unit including a second light source emitting a white light and a red coating member having a red fluorescent material which converts the white light from the second light source into a red light; and a green light emitting unit including a third light source emitting a white light and a green coating member having a green fluorescent material which converts the white light from the third light source into a green light. The light emitting device further includes a driver for individually driving the white, the red and the green light emitting unit.

Abstract: A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

Abstract: A light-emitting element with which a reduction in power consumption and an improvement in productivity of a display device can be achieved is provided. A technique of manufacturing a display device with high productivity is provided. The light-emitting element includes an electrode having a reflective property, and a first light-emitting layer, a charge generation layer, a second light-emitting layer, and an electrode having a light-transmitting property stacked in this order over the electrode having a reflective property. The optical path length between the electrode having a reflective property and the first light-emitting layer is one-quarter of the peak wavelength of the emission spectrum of the first light-emitting layer. The optical path length between the electrode having a reflective property and the second light-emitting layer is three-quarters of the peak wavelength of the emission spectrum of the second light-emitting layer.

Abstract: A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

Abstract: An object is to provide a light-emitting module in which a light-emitting element suffering a short-circuit failure does not cause wasteful electric power consumption. Another object is to provide a light-emitting panel in which a light-emitting element suffering a short-circuit failure does not allow the reliability of an adjacent light-emitting element to lower. Focusing on heat generated by a light-emitting element suffering a short-circuit failure, provided is a structure in which electric power is supplied to a light-emitting element through a positive temperature coefficient thermistor (PTC thermistor) thermally coupled with the light-emitting element.

Abstract: An organic light-emitting display device includes: a substrate having a transistor region and a thin-film transistor having a gate electrode, a source/drain electrode and an active layer sequentially formed on the transistor region, wherein a portion of the source/drain electrode is between the active layer and substrate.

Abstract: To provide a light-emitting device including the plurality of light-emitting elements having a structure in which a light-emitting area is large and defects in patterning of light-emitting elements are suppressed. To provide a lighting device including the light-emitting device. The light-emitting device includes a first wiring provided over a substrate having an insulating surface, an insulating film provided over the first wiring, a second wiring provided over the insulating film, and a light-emitting element unit including a plurality of light-emitting elements provided over the first wiring with the insulating film provided therebetween. The plurality of light-emitting elements each include a first electrode layer having a light-blocking property, a layer containing an organic compound in contact with the first electrode layer, and a second electrode layer having a light-transmitting property in contact with the layer containing an organic compound.

Abstract: System, method, and apparatus for two phase cooling in light-emitting devices are disclosed. In one aspect of the present disclosure, an apparatus includes a light-emitting device and a two-phase cooling apparatus coupled to the light-emitting device. The coupling of the two-phase cooling apparatus and the light-emitting device is operatively configured such that thermal coupling between the light-emitting device and the two-phase cooling apparatus enables, when, in operation, heat generated from the light-emitting device to be absorbed by a substance of a first phase in the two-phase cooling apparatus to convert the substance to a second phase.

Abstract: An organic electro-luminescence (EL) display device according to the present invention includes: a main substrate; a display section provided above the main substrate and including a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and a bank; a blue color filter provided above the display section, which selectively transmits blue light and selectively absorbs green light and red light; and a red color filter provided above the display section, which selectively transmits the red light and selectively absorbs the blue light and the green light, wherein the blue color filter has openings each at a position corresponding to the red light-emitting layer or the green light-emitting layer, and the red color filter has openings each at a position corresponding to the green light-emitting layer or the blue light-emitting layer.

Abstract: Improved packages for light emitters may be fabricated at the wafer level. The package can be a single device or an array of die. The package includes a thermal via that extends through the thickness of the package substrate. The thermal via may be made of a material possessing a high thermal conductivity. The thermal via may be wider at the package exterior than at the interior to provide heat spreading between the device and its heat sink. The taper angle of the thermal via may be around 45 degrees to match the natural spread of heat in a solid. The thermal via may extend above the package interior, so its height is sufficient to position an emitter placed thereon at one foci of a parabola, where the vertex of the parabola is at the surface of the package substrate from which the thermal via extends.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract: Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion.

Abstract: An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds.

Abstract: Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element which has excellent surface smoothness and is capable of suppressing deterioration of the characteristics of thin film elements. Also disclosed are methods for manufacturing substrates for thin film elements.

Abstract: For the production of a white LED having a predetermined color temperature, a blue LED (2a-2d) or a UV LED is coated with a conversion layer (5) which absorbs the blue light or UV light and emits light of greater wavelength. In accordance with the invention, the exact wavelength of the LED (2a-2d) is determined and the color conversion agent (5) is applied over this LED (2a-2d) in a quantity dependent upon the determined wavelength. Through this, the tolerance of the color temperature can be significantly reduced. The color conversion agent may be applied by means of dispenser or stamp, and the quantity and/or concentration selected in dependence upon the determined wavelength. Inkjet printing, deposition from the gas phase or selective removal by means of a laser is, however, also possible. The invention also relates to light sources produced in accordance with this method.

Abstract: A display unit that secures favorable display performance and has a simple structure is provided. The display unit includes a multilayer structure in which an organic light emitting device group respectively having a plurality of organic light emitting devices that emits cyan light and a plurality of organic light emitting devices that emits magenta light and a color filter group having a plurality of blue filters that transmit blue light and a plurality of yellow filters that transmit yellow light are sequentially layered. In the display unit, the cyan light and the magenta light entering from the organic light emitting device group to the color filter group is converted to blue light by the blue filter, and is respectively converted to green light and red light by the yellow filter. Therefore, compared to a case that the organic light emitting device group emits white light, color separation is more facilitated.

Abstract: A variable resistance material for memory applications. The material includes a base Ge—Sb—Te composition and further includes As-doping. The materials were included in variable resistance memory devices. Incorporation of As in the variable resistance composition led to a significant increase in the operational life of the device and, unexpectedly, did not reduce the programming speed of the device. In one embodiment, the composition includes at atomic concentration of Ge in the range from 7%-13%, an atomic concentration of Sb in the range from 50%-70%, an atomic concentration of Te in the range from 20%-30%, and an atomic concentration of As in the range from 2%-15%.

Abstract: A high-transparency LED display module, which comprises a transparent glass plate, and an LED luminous unit and a main driving unit which are lined linearly; the transparent glass plate is provided with lamp holes which are lined based on pixel pitch, and the lamp holes which are horizontally or vertically lined along the transparent glass plate are provided with wiring ducts which are vertical to the surface of the transparent glass plate; the LED luminous unit comprises a driving PCB board and an LED luminous bodies which are electrically connected with the PCB board; the driving PCB boards are inlaid in the wiring ducts of the transparent glass plate; the surface of the driving PCB board is vertical to the surface of the transparent glass plate; the positions of the LED luminous bodies correspond to the positions of the lamp holes; and the light of the LED luminous bodies is axially vertical to the surface of the transparent glass plate.

Abstract: An organic light emitting display device and a method for manufacturing the same are provided. The organic light emitting display device includes a substrate including a capacitor region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer of the capacitor region, a gate insulation film formed on the semiconductor layer, and a transparent electrode formed on the gate insulation film of the capacitor region, wherein a cross-sectional width of the transparent electrode is smaller than a width of the semiconductor layer.

Abstract: A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.

Abstract: Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Abstract: An organic electroluminescent display device which satisfies all of chromatic purity, transmission factor, reduction in reflection, and reflected color in balance at low cost is provided. An organic electroluminescent (EL) display device includes: a main substrate; an organic light-emitting layer formed above the main substrate and including a red light-emitting layer which emits red light, a green light-emitting layer which emits green light, a blue light-emitting layer which emits blue light, and a bank which is a non-light emitting region; a first light-adjusting layer formed above the blue light-emitting layer and the bank, which selectively transmits the blue light and selectively absorbs the green light and the red light; and a second light-adjusting layer formed above the red light-emitting layer and the green light-emitting layer, which selectively absorbs the blue light and selectively transmits the green light and the red light.

Abstract: A light-emitting unit with small energy loss is provided. Further, a light-emitting unit with high reliability is provided. A light-emitting unit is provided in the following manner: a separation layer including a leg portion and a stage portion, which protrudes over an electrode is formed so that a projected area of the stage portion is larger than that of the leg portion; a layer containing a light-emitting organic compound, an upper electrode of the first light-emitting element, and an upper electrode of the second light-emitting element are formed; and the upper electrode of the first light-emitting element is electrically connected to a lower electrode of the second light-emitting element in a region overlapping with the stage portion of the separation layer.

Abstract: A flexible organic light-emitting display device has a thin film encapsulation structure. The flexible organic light-emitting display device can be manufactured by a method including sequentially stacking a glass substrate, a first flexible substrate in which conductive particles are integrally dispersed, a display unit comprising a thin film transistor (TFT) layer and a light-emitting layer, and a second flexible substrate. The glass substrate can then be separated from the first flexible substrate by emitting light.

Abstract: For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units provided over a substrate having an insulating surface and each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large thickness, a plurality of auxiliary wirings with different widths and different thicknesses is used, and the arrangement of the wirings, electrodes of the light-emitting elements, and the like is optimized. Note that in the lighting device, light emitted from the light-emitting element passes through the substrate having an insulating surface and then is extracted.

Abstract: The present invention relates to an improved LED lighting device with good heat dissipation, comprising: a housing; a copper circuit layer, disposed on the housing; a plurality of LED chips, disposed on the copper circuit layer; and a white reflective member, disposed on the plurality of LED chips and the copper circuit layer, wherein the white reflective member is used to increase the light-emitting efficiencies of the LED chips. In the present invention, the copper circuit layer is directly disposed on the housing without using an aluminum substrate or a print circuit board, so that the cost of the improved LED lighting device is reduced; moreover, that also prevents the LED chips from damage when welding the LED chips, and makes the improved LED lighting device performing better heat dissipation property.

Abstract: Disclosed are an array substrate and a liquid crystal display device. The array substrate comprises a base substrate, and data lines and gate lines, which are orthogonal to each other to define a plurality of pixel units, formed in a pixel region of the base substrate, with each of the pixel units comprising a switching element, a pixel electrode and a common electrode that is overlapped with the pixel electrode. The common electrode in each of the pixel units comprises slits, and the slits have a shape of curved line and are parallel to each other so as to form a slit region in the common electrode; and the pattern profile of the pixel electrode is parallel to the profile of the slit region of the common electrode.

Abstract: A light emitting device and method of producing the same is disclosed. The light emitting device includes a transparent thermally conductive layer, a phosphor layer provided on the transparent thermally conductive layer, wherein the phosphor layer is not enclosed within any layers not containing phosphor, and at least one light emitting semiconductor arranged to emit light toward the transparent thermally conductive layer and the phosphor layer.

Abstract: A light signal contains a semiconductor light source and a convex lens system for representing signal aspects, especially on rail-bound traffic routes. In order to eliminate the need for monochrome semiconductor light sources, the semiconductor light source is a white point light source. A signal aspect-specific color filter is provided in the aperture region of the point light source.

Abstract: An LED lamp comprises a front cover comprising an upper plate, a first sidewall perpendicular to the upper plate, a through hole in a central portion of the upper plate; a rear cover comprising a bottom plate, a second sidewall perpendicular from the bottom plate to engage the front and rear covers by sleeving over the first sidewall; a lamp body comprising a first and second substrates, a third sidewall interconnecting the first and second substrates, the third sidewall penetrating through the through hole and is between the upper and bottom plates; a first LED unit on the first substrate, facing the second substrate; a second LED unit on the second substrate, facing away the first substrate, wherein the LED lamp is configure to direct light from the first LED units via the third sidewall, and light from the second LED units along a direction away from the first substrate.