Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

Abstract: A pixel and pixel array for use in an image sensor are provided. The image sensor includes floating sensing nodes symmetrically arranged with respect to a photodiode in each pixel.

Abstract: The invention describes in detail a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. The pixels have incorporated therein special potential barriers under the standard pinned photodiode region that diverts the photo-generated electrons from a deep region within the silicon bulk to separate storage structures located at the surface of the silicon substrate next to the pinned photodiode. The storage structures are p channel BCMD transistors that are biased to a low dark current generation mode during a charge integration period. The signal readout from the BCMD is nondestructive, therefore, without kTC noise generation. Thus a single pixel is capable of detecting several color-coded signals while using fewer or without using any light absorbing color filters on top of the pixel.

Abstract: A solid-state imaging device includes a photoelectric conversion film which is interposed between two transparent electrodes outside a semiconductor substrate, wherein a film surface of the photoelectric conversion film is provided so as to incline with respect to a front surface of the semiconductor substrate.

Abstract: In a solid-state imaging device, N regions serving as photoelectric conversion diodes are formed on outer peripheries of P regions in upper portions of island-shaped semiconductors formed on a substrate, and P+ regions connected to a pixel selection line conductive layer are formed on top layer portions of upper ends of the island-shaped semiconductors so as to adjoin the N regions and the P regions. In the P+ regions, a first P+ region has a thickness less than a second P+ region, and the second P+ region has a thickness less than a third P+ region.

Abstract: An interlayer insulating film is disposed above an image pickup region and a peripheral region of the semiconductor substrate. An opening is formed in the interlayer insulating film at a position overlying a photoelectric conversion portion. A waveguide member is formed above the image pickup region and the peripheral region of the semiconductor substrate. A part of the waveguide member, which part is disposed above the peripheral region, is removed such that the interlayer insulating film is exposed.

Abstract: A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.

Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.

Abstract: A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.

Abstract: An image sensor pixel includes a photosensitive element having a first doping type disposed in semiconductor material. A deep extension having the first doping type is disposed beneath and overlapping the photosensitive element in the semiconductor material. A floating diffusion is disposed in the semiconductor material. A transfer gate is disposed over a gate oxide that is disposed over the semiconductor material. The transfer gate is disposed between the photosensitive element and the floating diffusion. The photosensitive element and the deep extension are stacked in the semiconductor material in a “U” shape extending from under the transfer gate.

Abstract: A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor.

Abstract: The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.

Abstract: An image sensor pixel array includes a photoelectric conversion unit that has a second region in a substrate and vertically below a gate electrode of a transistor. A first region under a top surface of the substrate and above the second region supports a channel of the transistor. A color filter transmits a light via a light guide, the gate electrode and the first region to generate carriers collected by the second region. The gate electrode may be made thinner by a wet etch. An etchant for thinning the gate electrode may be introduced through an opening in an insulating film on the substrate. The light guide may be formed in the opening after the thinning. An anti-reflection stack may be formed at a bottom of the opening prior to forming the light guide.

Abstract: An optical sensor and a method for manufacturing the same are provided. The optical sensor includes a first photosensitive layer, a first charge carrier collecting element, a second photosensitive layer and a second charge carrier collecting element. The first photosensitive layer has a first light incident surface. The first charge carrier collecting element is disposed on a surface of the first photosensitive layer opposite to the first light incident surface of the first photosensitive layer. The second photosensitive layer is adjacent to the first photosensitive layer and has a second light incident surface. The second charge carrier collecting element is disposed on a surface of the second photosensitive layer opposite to the second light incident surface of the second photosensitive layer.

Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Abstract: An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.

Abstract: Provided is a solid-state imaging device including a first photoelectric-conversion-portion selectively receiving a first wavelength light in incident light and performing photoelectric conversion; and a second photoelectric-conversion-portion selectively receiving a second wavelength light which is shorter than the first wavelength, wherein the first photoelectric-conversion-portion is laminated above the second photoelectric-conversion-portion in an imaging area of a substrate so that the second photoelectric-conversion-portion receives the light transmitting the first photoelectric-conversion-portion, wherein a transmitting portion is formed in the first photoelectric-conversion-portion so that the second wavelength light transmits the second photoelectric-conversion-portion more than other portions, and wherein the transmitting portion is formed to include a portion satisfying the following Equation within a width D defined in the direction of the imaging area, a refraction index n of a peripheral portion

Abstract: An optoelectonice device array includes a plurality of packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package overlaps at least one adjacent package, and may be hermetically sealed.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a semiconductor substrate, an interconnection and an interlayer dielectric, a lower electrode layer, an image sensing device, a first via hole, a barrier pattern, a second via hole, and a metal contact. The semiconductor substrate comprises a readout circuitry. The interconnection and the interlayer dielectric are formed on the semiconductor substrate. The lower electrode layer is disposed over the interlayer dielectric. The image sensing device is disposed on the lower electrode layer. The first via hole is formed through the image sensing device. The barrier pattern is formed on a sidewall of the first via hole. The second via hole is formed through the lower electrode layer and the interlayer dielectric under the first via hole. The metal contact is formed in the first and second via holes.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

Abstract: A photoelectric conversion device adopts the structure reflecting the finding that color separation by the photoelectric conversion, which utilizes the difference of the PN junction depth of a semiconductor region, has the strong tendency that separation of a B signal is easy but separation of a G signal and an R signal becomes imperfect. That is, to cope with the tendency of the imperfect color separation of a G signal and an R signal, PN junction surfaces (JNC_B, JNC_R) of two photodiodes (PDs) for R light and B light are superimposed in the depth direction, and PD to G light is arranged independently. Accordingly, the color separation property of each RGB light wavelength band can be improved, the occupying area can be reduced compared with the case where each PD of RGB light is dispersed in the plane direction, and simplification of the semiconductor layer structure can be realized.

Abstract: A solid-state imaging device includes an n-type semiconductor substrate 203, a p-type well 204 provided in the substrate 203, photodiodes 201 arranged in a matrix above the substrate 203, and isolation regions 202 corresponding to the photodiodes 201. The isolation regions 202 each include a p-type first impurity diffusion layer 208. On a part of the p-type well 204 corresponding to the photodiode 201, an n-type first impurity diffusion layer 206 and a p-type impurity diffusion layer 207 that are to be formed as a light receiving part. Only immediately below the photodiode 201 corresponding to red pixels, an n-type second impurity diffusion layer 205 is provided. Immediately below the photodiode 201 corresponding to blue and green pixels, a p-type second impurity diffusion layer 209 is provided.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: A light receiving device 1 includes a support substrate 12 provided thereon with a photodetector 11 including a photodetecting portion 111 and a base substrate 112 on which the photodetecting portion 111 is placed; and a transparent substrate 13 disposed so as to oppose the face of the support substrate 12 on which the photodetector 11 is provided. Between the support substrate 12 and the transparent substrate 13, a frame portion 14 is provided so as to surround the photodetector 11. The frame portion 14 is a photo-curing adhesive, and directly adhered to the transparent substrate 13 and the support substrate 12. Such structure provides a light receiving device capable of exhibiting the desired performance, and a method of manufacturing such light receiving device can also be provided.

Abstract: A semiconductor apparatus includes a substrate; and a plurality of semiconductor thin films formed on said substrate, each of said semiconductor thin films having a pn-junction, and electrodes of p-type and n-type for injecting carriers to the pn-junction, wherein said semiconductor thin films are formed so that all or a part of said pn-junctions are connected serially. As different from a semiconductor thin film constituted of a single pn-junction, the light emission with the invented semiconductor apparatus is the summation of the light emission intensities of the entire pn-junctions, so that the light emitting intensity can be increased largely.

Abstract: An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

Abstract: A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of the first and second holes, forming a contact and an alignment mark by embedding a conducting material in the first and second holes, forming a photodiode in the semiconductor substrate, forming a wiring layer including a connecting part for connecting to the contact and a wiring for connecting to the connecting part, bonding a supporting substrate on the wiring layer, exposing the contact and the alignment mark on the surface of the semiconductor substrate by reducing the semiconductor substrate in thickness, and forming a filter and a lens on the photodiode based on the alignment mark.

Abstract: A CMOS image sensor and fabricating method thereof are disclosed. The method includes forming a plurality of photodiode regions on a semiconductor substrate, forming a plurality of color filters respectively corresponding to the photodiode regions, forming a planarization layer on the color filters, forming a protective layer on the planarization layer, and forming a microlens layer comprising a plurality of microlenses corresponding to the photodiode regions by depositing a low-temperature oxide layer on the protective layer and then patterning the low-temperature oxide layer. After the planarization layer is formed, the protective layer is formed by plasma processing. Thus, the planarization layer can be protected from chemical penetration via numerous pin holes in the microlens layer in the course of wet processing. Accordingly, the method prevents the microlens from lifting from the planarization layer.

Abstract: A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.

Abstract: Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode.

Abstract: A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.

Abstract: A semiconductor device comprises a semiconductor substrate comprised of an interposer having one surface and a semiconductor element provided on the one surface of the interposer, the semiconductor element including a light receiving portion for receiving light thereon; a transparent substrate having light-transmitting property and one surface facing the light receiving portion, the transparent substrate arranged in a spaced-apart relationship with the one surface of the interposer through a gap formed between the one surface of the interposer and the one surface of the transparent substrate; and a spacer formed in a shape of a frame, the spacer positioned between the one surface of the interposer and the one surface of the transparent substrate for regulating the gap, and the spacer having an inner surface and an outer surface, wherein the one surface of the interposer, the one surface of the transparent substrate and the inner surface of the spacer form a space which is hermetically sealed, and wherein the

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: The object of the invention is to provide a semiconductor device that can form photodiodes that do not short circuit, without damage that causes leakage, despite formation of the opening part, and its manufacturing method. The second semiconductor layer (12, 16) of the second conductivity type is formed on the main surface of the first semiconductor layer (10, 11) of the first conductivity type. Element-separating regions (13, 14, 15, 17) formed at least on the second semiconductor layer separate the device into the regions of plural photodiodes (PD1-PD4). Conductive layer 18 is formed on the second semiconductor layer 16 in a pattern that is divided for each of the photodiodes and is connected to the second semiconductor layer 16 along the outer periphery with respect to all of the plural photodiodes. Insulation layer (19, 21) is formed on the entire surface to cover conductive layer 18.

Abstract: A method for forming microlenses of different curvatures is described, wherein a substrate having at least a first and a second areas different in height is provided. A transparent photosensitive layer having a planar surface is formed on the substrate and then patterned into at least two islands of different thicknesses respectively over the first area and the second area. The at least two islands are heated and softened to form at least two microlenses of different curvatures respectively over the first area and the second area, wherein the higher an area is, the smaller the curvature of the corresponding microlens is.

Abstract: An image sensor include an interlayer dielectric layer formed over a semiconductor substrate; a color filter array formed over the interlayer dielectric layer; a planarization layer formed over the color filter; and a microlens array having a continuous, gapless shape formed over the planarization layer and spatially corresponding to the color filter array. The microlens array is composed of a first dielectric layer and a second dielectric layer formed over the first dielectric layer.

Abstract: A Complementary Metal Oxide Semiconductor (CMOS) image sensor includes a red photodiode formed in an first epitaxial layer, an isolation layer formed with a contact region left in a partial area of the red photodiode, a green photodiode formed in a surface of the isolation layer, a contact formed in the contact region at a predetermined spatial distance from the green photodiode, a second epitaxial layer formed on the first epitaxial layer in which the green photodiode is formed, a plurality of plugs formed in the second epitaxial layer and electrically connected to the green photodiode and the contact, a device isolation film formed in a surface of the second epitaxial layer, a blue photodiode formed in a surface of the second epitaxial layer above the green photodiode, and a well region formed in the second epitaxial layer inside the plug.

Abstract: A semiconductor device includes: a plurality of pixel units disposed in a matrix shape, each of the plurality of pixel units including: a first photoelectric conversion element for converting incident light of a first color into signal charges; a second photoelectric conversion element for converting incident light of a second color into signal charges; a third photoelectric conversion element for converting incident light of a third color into signal charges; and a detector circuit shared by the first to third photoelectric conversion elements for detecting the signal charges converted by each of the first to third photoelectric conversion elements, wherein the plurality of pixel units are pixel units adjacently disposing a row (column) juxtaposing the first photoelectric conversion element and detector circuit and a row (column) juxtaposing the second and third photoelectric conversion elements.

Abstract: Embodiments relate to a vertical-type CMOS image sensor, a method of manufacturing the same, and a method of gettering the same, in which source and drain regions are expanded to improve grounding and gettering effects. In embodiments, the vertical-type CMOS image sensor may include a silicon substrate, a first photodiode formed in a prescribed part of the silicon substrate, a first epitaxial layer formed on the silicon substrate, a second photodiode formed on the first epitaxial layer to overlap the first photodiode, a second epitaxial layer formed on the first epitaxial layer, a third photodiode formed on the second epitaxial layer to overlap the second photodiode, and first to third grounded dummy moats formed by implanting impurities into uniform parts on the silicon substrate, the first epitaxial layer, and the second epitaxial layer.

Abstract: A photoelectric conversion device adopts the structure reflecting the finding that color separation by the photoelectric conversion, which utilizes the difference of the PN junction depth of a semiconductor region, has the strong tendency that separation of a B signal is easy but separation of a G signal and an R signal becomes imperfect. That is, to cope with the tendency of the imperfect color separation of a G signal and an R signal, PN junction surfaces (JNC_B, JNC_R) of two photodiodes (PDs) for R light and B light are superimposed in the depth direction, and PD to G light is arranged independently. Accordingly, the color separation property of each RGB light wavelength band can be improved, the occupying area can be reduced compared with the case where each PD of RGB light is dispersed in the plane direction, and simplification of the semiconductor layer structure can be realized.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining a satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, an active layer, and a p-type layer formed on the substrate, the active layer being sandwiched by the n-type layer and the p-type layer, and the active layer comprising a thick portion and a thin portion, wherein the active layer has a flat lower surface (on the substrate side) and an uneven upper surface so as to form the thick portion and the thin portion.

Abstract: An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.

Abstract: CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels extending into the epitaxial layer for receiving light. The image sensor also includes at least one of a horizontal barrier layer between the substrate and the epitaxial layer for preventing carriers generated in the substrate from moving to the epitaxial layer, and a plurality of lateral barrier layers between adjacent ones of the plurality of pixels for preventing lateral diffusion of electrons in the epitaxial layer.

Abstract: A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

Abstract: There is provided a light emitting and image sensing device for a scene. The device is formed in a semiconductor substrate and comprises a photosensor component for sensing an image of the scene. The photosensor component is responsive to incident light from the scene and provides an electrical signal representative of the image. There is also a photoemitter component for emitting a light signal representative of the electrical signal, and a coupling component connecting the photosensor component with the photoemitter component.

Abstract: A color solid-state image sensing device comprising unit cells arranged two-dimensionally in a surface of a silicon substrate, each unit cell including a blue pixel provided as defined herein, a red pixel as defined herein and a green pixel as defined herein, wherein the relation P?W holds when W is a distance between the position of the center of gravity in a sensitivity distribution of the green pixel and the position of the center of gravity in a sensitivity distribution of the red pixel, and P is a pitch of arrangement of the unit cells.

Abstract: The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.