Abstract: This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the IIIB and IVB Group of the Periodic Table and any nano-material and/or micro/nano spheres that responds to Rayleigh Scattering and/or Mie Scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The apparatus and methods according to the present invention provides in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion.

Abstract: A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited by continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The method is designed to generate a minimum amount of waste solutions for chemical treatments.

Abstract: A method and apparatus for depositing a film on a substrate includes subjecting material to an energy beam.

Abstract: A method of manufacturing semiconductor assemblies is provided. The manufacturing method includes thermally processing a first semiconductor assembly comprising a first semiconductor layer disposed on a first support and thermally processing a second semiconductor assembly comprising a second semiconductor layer disposed on a second support. The first and second semiconductor assemblies are thermally processed simultaneously, and the first and second semiconductor assemblies are arranged such that the first semiconductor layer faces the second semiconductor layer during the thermal processing.

Abstract: Disclosed is a solar cell or component thereof that includes a p-type thin film solar light absorbing layer having one or more compositions of group II-VI alloys described as CdTexM1-x, where M is S, Se or O. An n-type thin-film transparent window layer comprising CdS is provided adjacent to the CdTexMi-x p-type thin film solar light absorbing layer such that a p-n junction formed between the layers.

Abstract: A chemical bath deposition method and a system are presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition system deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments.

Abstract: A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer.

Abstract: A multi junction photovoltaic device includes lower pn junction layers comprising silicon and upper pn junction layers formed over the lower pn junction layers. The upper pn junction layers include a CdTe layer, wherein the upper pn junction layers are electrically serially connected to the lower pn junction layers. The upper pn junction layers can convert a first portion of photons into a first electric voltage. The lower pn junction layers can convert a second portion of photons into a second electric voltage lower than the first electric voltage.

Abstract: Disclosed are minority carrier based mercury-cadmium telluride (HgCdTe) infrared detectors and arrays, and methods of making, are disclosed. The constructions provided by the invention enable the detectors to be used at higher temperatures, and/or be implemented on less expensive semiconductor substrates to lower manufacturing costs. An exemplary embodiment a substrate, a bottom contact layer disposed on the substrate, a first mercury-cadmium telluride layer having a first bandgap energy value disposed on the bottom contact layer, a second mercury-cadmium telluride layer having a second bandgap energy value that is greater than the first bandgap energy value disposed on the first mercury-cadmium telluride layer, and a collector layer disposed on the second mercury-cadmium telluride layer, wherein the first and second mercury-cadmium telluride layers are each doped with an n-type dopant.

Abstract: A main object of the invention is to provide an organic thin-film solar cell that offers high performance and is easy to form. To achieve the object, the invention provides an organic thin-film solar cell comprising: a metal electrode layer having an aluminum layer on a surface thereof, an electron extraction layer which is a zinc oxide layer formed on the aluminum layer of the metal electrode layer, a photoelectric conversion layer formed on the electron extraction layer, and a transparent electrode layer formed on the photoelectric conversion layer, wherein the electron extraction layer has a concentration gradient in which the content of oxygen atoms in the electron extraction layer tends to increase from the metal electrode layer side to the photoelectric conversion layer.

Abstract: The highly mismatched alloy Zn1-yMnyOxTe1-x, 0?y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Abstract: A method and apparatus for depositing a film on a substrate includes subjecting material to an energy beam.

Abstract: Method for making a photovoltaic device and structure thereof. The method includes providing a substrate including a glass layer, a first conductive layer on the glass layer, and a cadmium sulfide layer on the first conductive layer. Additionally, the method includes depositing one or more first materials on the cadmium sulfide layer. The one or more first materials include a first quantity of chemical element cadmium and a second quantity of chemical element tellurium. Moreover, the method includes performing a first thermal treatment to at least the first quantity of chemical element cadmium, the second quantity of chemical element tellurium, and a third quantity of chemical element chlorine, so that a polycrystalline layer composed of at least cadmium telluride is formed on the cadmium sulfide layer. Also, the method includes depositing one or more second materials on a surface of the polycrystalline layer.

Abstract: A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the Te-rich layer; and laying down a contact layer on the interface layer. The interface layer is composed of a metallic form of Zn and Cu.

Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a method includes constructing a radiation sensitive component in and/or on a microelectronic device, placing a curable component in and/or on the microelectronic device, and forming a barrier in and/or on the microelectronic device to at least partially inhibit irradiation of the radiation sensitive component. The radiation sensitive component can be doped silicon, chalcogenide, polymeric random access memory, or any other component that is altered when irradiated with one or more specific frequencies of radiation. The curable component can be an adhesive, an underfill layer, an encapsulant, a stand-off, or any other feature constructed of a material that requires curing by irradiation.