Abstract: A method is provided for fabricating a thin-film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor material. This pre-reaction typically includes processing above the liquidus temperature of the compound semiconductor. The compound semiconductor material is reduced to a particulate form and deposited onto a substrate to form a thin-film having a composition and atomic structure substantially the same as a composition and atomic structure of the compound semiconductor material.

Abstract: A technique that can realize high integration even for multilayered three-dimensional structures at low costs by improving the performance of the semiconductor device having recording or switching functions by employing a device structure that enables high precision controlling of the movement of ions in the solid electrolyte. The semiconductor element of the device is formed as follows; two or more layers are deposited with different components respectively between a pair of electrodes disposed separately in the vertical (z-axis) direction, then a pulse voltage is applied between those electrodes to form a conductive path. The resistance value of the path changes according to an information signal. Furthermore, a region is formed at a middle part of the conductive path. The region is used to accumulate a component that improves the conductivity of the path, thereby enabling the resistance value (rate) to response currently to the information signal.

Abstract: An alloy substrate formed on an alloy of Ni and Mo is formed by electroforming. The alloy substrate has graded composition in which alloy composition varies in a thickness direction thereof. A lower surface side is mainly composed of Ni, and a upper surface side is mainly composed of Mo. An upper surface of the alloy substrate is formed with a large number of minute and pyramidal unevenness having high light scattering property. A CIS light absorbing layer is formed on the upper surface of the alloy substrate, and an upper electrode is provided thereabove.

Abstract: This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500 ?·cm or higher.

Abstract: Provided herein are methods of incorporating additives into thin-film solar cell substrates and back contacts. In certain embodiments, sodium is incorporated into a substrate or a back contact of a thin-film photovoltaic stack where it can diffuse into a CIGS or other absorber layer to improve efficiency and/or growth of the layer. The methods involve laser treating the substrate or back contact in the presence of a sodium (or sodium-containing) solid or vapor to thereby incorporate sodium into the surface of the substrate or back contact. In certain embodiments, the surface is simultaneously smoothed.

Abstract: Thin-film solar cells of the CIGS-type use two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer on top of the CIGS-layer and a second ALD ZnO-buffer layer on top of the first buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The technology also relates to a method of producing the cell and a process line for manufacturing of the cell structure.

Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Abstract: In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.

Abstract: An accelerated and simple-to-realize fast method for thermally converting metallic precursor layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency are provided. The substrates previously prepared at least with a metallic precursor layer are heated in a furnace, which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to an end temperature between 400° C. and 600° C. and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens.

Abstract: A copper indium gallium selenide photovoltaic cell can include a substrate having a transparent conductive oxide layer. The copper indium gallium selenide can be deposited using sputtering and vapor transport deposition.

Abstract: The invention discloses a thin film solar cell and the manufacturing method thereof. The thin film solar cell comprises a substrate, a back electrode layer, an absorber layer, a buffer layer, and a transparent electrode layer. The buffer layer is a compound consisted essentially of a metal and at least two elements of Group VIA. The compound has a chemical formula of Mx (VIA1y, VIA2z)w. M represents a singular metal element or an alloy of multiple metal elements, and VIA1 and VIA2 are two different elements of Group VIA. X, y, z and w are non-zero positive numbers. The buffer layer has a band gap gradient between the absorber layer and the transparent electrode layer.

Abstract: A method of manufacturing a photovoltaic device, which method comprises the steps of providing a first layer structure on an second layer structure so that the first layer structure has an external surface, and an interface with the second layer structure, the first layer structure comprising a thin-film photovoltaic absorber layer; patterning through the first layer structure from the external surface to or into the second layer structure by first mechanically removing material from the first layer structure in a predetermined patterning area, and subsequently removing, by means of laser cleaning, residual material from the mechanical removal in the patterning area; and a system for patterning an object having a first layer structure on an second layer structure, the system comprising a mechanical patterning device and a laser cleaning device, and means for relative movement between the object, and the mechanical patterning device and the laser cleaning device.

Abstract: A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided. A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).

Abstract: A thin film solar including a II-VI compound semiconductor absorber layer and a stainless steel substrate is provided. The stainless steel flexible foil substrate includes about 10-25% chromium and about 0.50-2.25% molybdenum, and no nickel. Process yield of the solar cells manufactured on such stainless steel substrates is higher than 10% because of a very low defect density such as micro-cracks, pinholes, and adhesion failures between the substrate and the absorber layer.

Abstract: A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed.

Abstract: An optoelectronic fiber and methods for forming such a fiber are disclosed. The fiber generally includes an electrically conductive fiber core, a first semiconducting layer substantially surrounding the fiber core, and a second semiconducting layer substantially surrounding the first semiconducting layer. The first and second semiconducting layers are of complementary types, i.e., one is p-type and the other is n-type. The fiber may be made, e.g., by electrospinning a material to form a fiber core; substantially surrounding the fiber with a first semiconducting material; and substantially surrounding the first semiconducting material with a second semiconducting material. Optoelectronic fibers can be fashioned into a web to provide a solar cell material or substantially transparent conductive material.

Abstract: A single unit cell (herein, referred to as “a unit cell”) is formed out of a lower electrode layer (Mo electrode layer) 2 formed on a substrate 1, a light-absorbing layer (CIGS LIGHT-ABSORBING LAYER) 3 including copper, indium, gallium, and selenium, a high-resistance buffer layer thin film 4 formed of InS, ZnS, CdS, and the like on the light-absorbing layer thin film, and an upper electrode thin film (TCO) 5 formed of ZnOAl and the like. In order to connect the unit cell, a part of a contact electrode 6 connecting the upper electrode and the lower electrode is formed to overlap with a dividing line of the lower electrode 2 formed by a first scribing.

Abstract: A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.

Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.

Abstract: A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.

Abstract: A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be driven by a CMOS steering element.