Abstract: Two charge quantities (Q1,Q2) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensor 1 as signals d?(m,n) having the distance information. Since the respective pixels P (m,n) output signals d?(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup area 1B. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Abstract: A package structure is described. A light emitting element and a light sensing element are disposed on a substrate, and are both wrapped by a package layer. Meanwhile, the light emitting element and the light sensing element are separated by a trench of the package layer, such that lights generated by the light emitting element are blocked, thereby reducing the noise interference on the light sensing element and improving the sensing precision of the light sensing element.

Abstract: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

Abstract: A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer.

Abstract: An active-matrix device includes a substrate; a plurality of pixel electrodes provided on a first surface of the substrate; a plurality of switching elements provided to correspond to each of the pixel electrodes, each of the switching elements including a fixed electrode connected to the each pixel electrode, a movable electrode mainly made of silicon and displaceably provided so as to contact with and separate from the fixed electrode, and a driving electrode provided to oppose the movable electrode via an electrostatic gap; a first wiring connected to the movable electrode; and a second wiring connected to the driving electrode, wherein a voltage is applied between the movable electrode and the driving electrode to generate an electrostatic attraction between the movable electrode and the driving electrode so as to displace the movable electrode such that the movable electrode contacts with the fixed electrode to electrically connect the first wiring to the pixel electrode.

Abstract: A method for manufacturing an optical element wafer according to the present invention, in which a plurality of optical elements are arranged in two dimensions, includes: a replica forming step of forming a replica, in which an optical element shape is formed on a front surface side, in each of a plurality of recesses formed in a base; a stamper mold forming step of forming a stamper mold using the optical element shape of the replica; and an optical element wafer forming step of transferring the optical element shape to an optical element material using the stamper mold to form an optical element wafer.

Abstract: An optical element according to the present invention includes: an optical surface at a center portion thereof; and a spacer section having a predetermined thickness on an outer circumference side of the optical surface, wherein a bottom portion for positioning an adhesive is provided on a further outer circumference side of the spacer section with a tapered portion interposed therebetween.

Abstract: The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion.

Abstract: An integrated circuit package includes an angled one-piece substrate having a light source fixed to one area and a sensor die fixed to a second area, such that the light source is directed to illuminate the field of view of the sensor die when a surface of interest is imaged. The integrated circuit package is well suited for generating navigation information regarding movement relative to a surface. In one method of forming the integrated circuit package, the single-piece substrate is originally a generally flat lead frame to which the sensor die and light source are attached. After the components have been connected, the lead frame is bent to provide the desired light source-to-sensor angle. In an alternative method, the lead frame is pre-bent. For either method, optics may be connected to the integrated circuit package, thereby providing a module that includes the optics, the light source, the sensor and the packaging body.

Abstract: The light-emitting element chip includes: a substrate; a light-emitting portion including plural light-emitting elements each having a first semiconductor layer that has a first conductivity type and that is stacked on the substrate, a second semiconductor layer that has a second conductivity type and that is stacked on the first semiconductor layer, the second conductivity type being a conductivity type different from the first conductivity type, a third semiconductor layer that has the first conductivity type and that is stacked on the second semiconductor layer, and a fourth semiconductor layer that has the second conductivity type and that is stacked on the third semiconductor layer; and a controller including a logical operation element that performs logical operation for causing the plural light-emitting elements to perform a light-emitting operation, the logical operation element being formed by combining some sequential layers of the first, second, third and fourth semiconductor layers.

Abstract: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible with the PCB.

Abstract: An organic electroluminescent display device includes first and second substrates facing and spaced apart from each other, gate and data lines on an inner surface of the first substrate and crossing each other to define a pixel region, a switching element at a crossing point of the gate and data lines, a driving element connected to the switching element, a first electrode on an inner surface of the second substrate, an organic light-emitting layer on the first electrode in the pixel region, a second electrode on the organic light-emitting layer in the pixel region and electrically connected to the driving element, and a coloring element on an outer surface of the second substrate in the pixel region.

Abstract: In one exemplary embodiment, a light emitting module includes a LED chip, a solar cell unit, and an interconnecting electrode. The LED chip includes a first P type semiconductor layer. The solar cell unit includes a second P type semiconductor layer. The interconnecting electrode is sandwiched between the first and second P type semiconductor layers. The interconnecting electrode electrically couples the solar cell unit to the LED chip.

Abstract: A novel photodiode stack which comprising of more than 3 photodiodes connected in series to produce a large photovoltaic voltage in the presence of light using junction isolation technology.

Abstract: The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes.

Abstract: Optical die structures and associated package substrates are generally described. In one example, an electronic device includes a package substrate having a package substrate core, a dielectric layer coupled with the package substrate core, and one or more input/output (I/O) optical fibers coupled with the package substrate core or coupled with the build-up dielectric layer, or combinations thereof, the one or more I/O optical fibers to guide I/O optical signals to and from the package substrate wherein the one or more I/O optical fibers allow both input and output optical signals to travel through the one or more I/O optical fibers.

Abstract: An optoelectronic distance sensor with slant component 200 having a spacer 202 bonded on a mother substrate 201 is disclosed. The spacer 202 has slant surface for receiving one or more optoelectronic components 204, such as an optical sensor, that are mounted at an angle to the mother substrate 201. Such electronic components 204 are bonded on a daughter substrate 203 which attaches to the spacer 202 at the slant surface. The optoelectronic assembly 200 can be manufactured at chip-level, including by one ore more of exemplary methods disclosed herein.

Abstract: An integrated circuit package includes an integrated circuit die 1 having a plurality of optical elements 5 sensitive to and/or capable of generating light, whereby data communication to circuitry of the integrated circuit die can be effected using a data channels implemented using the plurality of elements. The data channels are along optical pathways provided by an adapter unit 17 mounted on a PCB 19. The adapter unit 17 forms the optical pathways between optical fibers 23 and the respective optical element 5. Thus, there is no requirement to implement expensive wire-bonding as part of the packaging process.

Abstract: Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.

Abstract: A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

Abstract: By increasing the width of a lead terminal 2 connected to a die pad 1 in the vicinity of the die pad 1 and forming a slit 9 and a projecting plate in the lead terminal in the region where resin 5 is formed, it is possible to ensure the holding strength of the lead terminal by the resin 5, as well as ensuring the strength of the lead terminal during the manufacturing process and achieving a reduction in thickness.

Abstract: A transceiver for use in a bidirectional optical communication link over a multimode channel is provided. The transceiver includes a single transverse mode light source in a transmitter. A waveguide or fiber based bidirectional coupler projects the transmitter mode to the high modes of the multimode channel. A detector coupled to predominantly all the modes of the channel via the waveguide or fiber based bidirectional coupler.

Abstract: An package such as an optocoupler package is disclosed. The optocoupler package includes a leadframe structure comprising a first die attach pad comprising a first die attach pad surface and a second die attach pad with a second die attach pad surface. The optocoupler package further has an optical emitter device on the first die attach pad, and an optical receiver device on second die attach pad. The optical receiver device is oriented at an angle with respect to the optical emitter device, and an optically transmissive medium is disposed between the optical emitter device and the optical receiver device.

Abstract: The present invention relates to a light emitting device comprising at least one light emitting diode which emits light in a predetermined wavelength region, copper-alkaline earth metal based inorganic mixed crystals activated by rare earths, which include copper-alkaline earth silicate phosphors which are disposed around the light emitting diode and absorb a portion of the light emitted from the light emitting diode and to emit light different in wavelength from the absorbed light.

Abstract: A curable organopolysiloxane resin composition having a viscosity at 25° C. in the range of 0.001 to 5,000 Pa·s, a total acid number as specified by JIS K 2501 (1992) in the range of 0.0001 to 0.2 mg/g, and light transmittance in a cured state equal to or greater than 80%; an optical part comprised of a cured body of the aforementioned composition. The curable organopolysiloxane resin composition of the invention is characterized by good transparency, low decrease in transmittance when exposed to high temperatures, and excellent adhesion when required.

Abstract: Methods and apparatuses for forming optical packages, and intermediate structures resulting from the same are disclosed, which provide an optical element over a device. The optical element is formed by applying a force to lateral portions of a liquid material layer formed below an elastomeric material layer such that the liquid material layer has a radius of curvature sufficient to direct light to a light sensitive portion of the device, after which the liquid material layer is exposed to conditions which maintain the radius of curvature after the lateral force is removed.

Abstract: An optical interconnect is provided which may allow flexible high-bandwidth interconnection between chips, eliminate the need for optical alignment between the optoelectrical (OE) die and waveguide during assembly because the OE die is at least partially embedded inside the waveguide (lower cladding layer, upper cladding layer, and core layer), eliminate the need for handling the optical interconnect at OEM, and not impact current substrate and motherboard technology

Abstract: A polymer film having fixed electronic junctions; devices that include the film; and methods for making and using the film.

Abstract: An optical transmission/reception device includes at least one light emitting portion and at least one light receiving portion on the same substrate. The light emitting portion includes at least a lower multilayer reflector and an active layer provided on the lower multilayer reflector. A metal layer including a plurality of opening portions is provided in an upper portion of the light emitting portion. Each of the opening portions has a size smaller than a light emission wavelength of the light emitting portion.

Abstract: Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

Abstract: A semiconductor module (A1) comprises a semiconductor device (10) provided with a semiconductor chip, and a conductive cover (6) for electromagnetic shielding bonded to the semiconductor device (10) via an adhesive coat (8). The conductive cover (6) includes a surface facing the adhesive coat (8), and the surface is formed with a convex portion (6a) protruding toward the adhesive coat (8). Around the convex portion (6a), a space (7) is formed for filling in adhesive to form the adhesive coat (8).

Abstract: A mechanical joint having at least first and second joint elements arranged in contact with each other. A first surface of the first joint element abuts a second surface of the second joint element and is at least partially provided with at least one optically emitting module. The respective abutting second surface of the second element is provided, at least in part, with at least one optically receiving module.

Abstract: Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far.

Abstract: An integrated circuit package includes an angled one-piece substrate having a light source fixed to one area and a sensor die fixed to a second area, such that the light source is directed to illuminate the field of view of the sensor die when a surface of interest is imaged. The integrated circuit package is well suited for generating navigation information regarding movement relative to a surface. In one method of forming the integrated circuit package, the single-piece substrate is originally a generally flat lead frame to which the sensor die and light source are attached. After the components have been connected, the lead frame is bent to provide the desired light source-to-sensor angle. In an alternative method, the lead frame is pre-bent. For either method, optics may be connected to the integrated circuit package, thereby providing a module that includes the optics, the light source, the sensor and the packaging body.

Abstract: A head of a cavity exploration device, with an integrated circuit support which has first and second surfaces and a plurality of through-holes associated with corresponding first and second conducting pads positioned on the respective first and second surfaces of the integrated circuit support, a respective conducting micro-cable is placed in the through-hole, with this micro-cable having a portion which is uninsulated for a length greater than or equal to the thickness of the support. The micro-cable is soldered to the associated first and second conducting pads. Next the micro-cable is glued to the first and second associated conducting pads. The micro-cable is molded in first and second resin layers onto the respective first and second conducting pads, with the resin layers covering the uninsulated portion of the micro-cable.

Abstract: A photoelectric element package with temperature compensation includes a substrate, and a first light-emitting element, a second light-emitting element, a photosensitive element, and a drive element disposed on the substrate, all of which are disposed in an internal space formed by a first casing joined with a second casing. Alternatively, the second light-emitting element and the photosensitive element are disposed in an internal space of a third casing. By adding the second light-emitting element, the photosensitive element can sense the light emitting intensity accurately in the absence of other interferences, so as to feed back the current operating state of the light-emitting element. A temperature compensation function is achieved by a laser driver, so as to reduce the influence of temperature on the light-emitting element, such that the light-emitting element emits light in an accurate intensity.

Abstract: A method for producing an optical coupling element of the present invention includes the steps of: determining the mounting position of a light-emitting element and a light-receiving element on the front surface of the header portion of each lead frame based on the current amplification factor of the light-receiving element to be mounted; determining the bending angle of each header portion and a distance between the two elements after being bent by calculation such that a predetermined current transfer ratio and an internal insulation distance required by the optical coupling element to be produced are obtained; detecting the determined mounting position by detecting intersections of V-shaped grooves in a grid pattern formed on the front surface of each header portion; mounting each element onto the detected position of the front surface of each header portion while detecting the concave-convex shape; and bending each header portion after mounting each element at the bending angle determined by calculation.

Abstract: A photo interrupter has a lead frame assembly that has a lead frame having connector terminals for external connection, a light-emitting mold, a light-receiving mold, and a connector mold. The photo interrupter also has an outer case having a connection section. The connector terminals are adapted to be accommodated in the connector section when the lead frame assembly is accommodated in the outer case. At least one of the outer case or the connector mold is provided with a latching section for latching the connector mold to the outer case. Resin for forming the connector mold may be same as or different from light permeable resin for forming the light-emitting mold and the light-receiving mold.

Abstract: An optoelectronic transmitting and receiving device, including a pierced platform including at least one through hole for introduction of an optical fiber, a first optoelectronic element integral with the platform, arranged substantially facing the through hole and configured to emit or receive a first laser beam at a first wavelength, and at least one second optoelectronic element hybridized on the platform and arranged substantially facing the through hole. The first element is arranged between the platform and the second element, which is configured to receive or emit a second laser beam at a second wavelength, different than the first wavelength, passing through the first element.

Abstract: Embodiments of a system for displaying images include a light emitting device with a plurality of photo sensors. Each photo sensor includes a PIN diode composed of an N+ doped semiconductor region, a P+ doped semiconductor region, and an intrinsic semiconductor region formed therebetween. An insulated control gate overlaps the intrinsic semiconductor region and is operative to provide the PIN diode with a controllable electric characteristic with respect to a saturation photo current at a saturation voltage.

Abstract: A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disposing an anode electrode, and applying to the carbon layer a voltage higher than that at a driving of the electron-emitting device.

Abstract: A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer (40) is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.

Abstract: A flexible printed circuit board module includes a flexible printed circuit board having a conductive layer in an upper part of the flexible printed circuit board, an optical fiber disposed under the flexible printed circuit board, light propagating through an interior of the optical fiber and a supporting member supporting an optical fiber and having a first reflecting member reflecting incident light from the flexible printed circuit board so as to connect the light to the optical fiber.

Abstract: An image sensor includes: a light source that irradiates a light on an object; a lens body that converges a reflection of the light from the object; a plurality of IC chips that receive the reflection passed through the lens body; and a transparent member provided between the IC chips and the lens body. The transparent member includes a refractive index changing region provided at a portion opposite to a gap between adjacent IC chips. A refractive index in the refractive index changing region increases continuously or stepwise toward an inner portion of the transparent member from a surface of the transparent member on an IC chips side so that the refractive index changing region refracts a part of the reflection to be incident into the gap to the IC chips.

Abstract: A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

Abstract: An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel.

Abstract: A reflex coupler has an organic light emitter for generating a light signal and an inorganic photodetector with a detector area. The organic light emitter and the detector area are optically coupled as a result of radiation returned from an object onto which the light signal impinges, and the organic light emitter and the inorganic photodetector are integrated in one device.

Abstract: An optocoupler has an organic light emitter and an inorganic photodetector with a detector area, the detector area being optically coupled to the organic light emitter. The organic light emitter converts an electrical input signal into a light signal and the inorganic photodetector converts the light signal into an electrical output signal, the organic light emitter and the inorganic photodetector being integrated in a component and galvanically separated.

Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.

Abstract: A semiconductor light-emitting means (56) comprises a transparent substrate (12), on which light-emitting diodes (26, 28) are arranged. These and electrodes (14, 36) used for contacting them are transparent.