Abstract: A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° C. or less and having a contact resistance of less than 5×10?4 ohms-cm2.

Abstract: The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.

Abstract: A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods: (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions; (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor; (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field.

Abstract: A method of forming a solar cell including: providing a semiconductor body including at least one photoactive junction; forming a semiconductor contact layer composed of GaAs deposited over the semiconductor body; and depositing a metal contact layer including a germanium layer and a palladium layer over the semiconductor contact layer so that the specific contact resistance is less than 5×10?4 ohms-cm2.

Abstract: The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer.

Abstract: A backside illuminated image sensor includes a substrate layer having a frontside and a backside. An array of photosensitive pixels is disposed within the substrate layer and is sensitive to light incident through the backside of the substrate layer. A metal grid is disposed over the backside of the substrate layer. The metal grid surrounds each of the photosensitive pixels and defines optical apertures for receiving the light into the photosensitive pixels through the backside. The metal grid includes intersecting wires each having a triangular cross-section. A material layer surrounds the metal grid.

Abstract: Disclosed is a method which includes forming a bottom metallic electrode on an insulating substrate; forming a semiconductor junction on the metallic electrode; forming a transparent conducting overlayer in contact with the semiconductor junction; and forming a metallic layer in contact with the transparent conducting overlayer, wherein the metallic layer is formed by a plating process. The plating process may be an electroplating process or an electroless plating process. The transparent conducting overlayer may be carbon nanotubes or graphene. The semiconductor junction may be a p-i-n semiconductor junction, a p-n semiconductor junction, an n-p semiconductor junction or an n-i-p semiconductor junction.

Abstract: A method of manufacturing an n-type electrode comprising the steps of: preparing an N-type base semiconductor substrate, comprising an n-base layer, a p-type emitter on the n-base layer, a first passivation layer on the p-type emitter, and a second passivation layer on the n-base layer; applying a conductive paste onto the second passivation layer on the n-base layer, wherein the conductive paste comprises, (i) 100 parts by weight of a conductive powder, (ii) 0.1 to 10 parts by weight of an aluminum powder with particle diameter of 2 to 12 ?m, (iii) 3.5 to 25 parts by weight of a glass frit, and (iv) an organic medium; and firing the conductive paste at temperature of 910° C. or lower.

Abstract: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

Abstract: A polymer electroluminescent device is provided. The device includes an anode, a light-emitting layer, a cation-containing water-soluble polymer layer and a cathode formed in this order on a substrate wherein the cation-containing water-soluble polymer layer is formed by wet coating. The cation-containing water-soluble polymer layer as a secondary thin film layer is not dissolved in a solvent for the formation of the underlying light-emitting layer to prevent intermixing between the two layers, thereby enabling the formation of a multilayer structure by wet coating. In addition, the cation-containing water-soluble polymer layer attracts electrons injection from the cathode by an attractive Coulomb force to effectively increase the mobility of the electrons while blocking high-mobility holes from the anode at an interface between the light-emitting layer and the water-soluble layer. Further provided is a method for fabricating the electroluminescent device.

Abstract: It is aimed to provide a photoelectric conversion device having high reliability by reducing cracks occurring in a photoelectric conversion layer. Included is a laminate in which a substrate, a pair of electrodes located on the substrate with a gap therebetween, and a photoelectric conversion layer located in the gap and on the pair of electrodes are laminated, wherein each of the pair of electrodes includes a linear portion extending along the gap and a first projecting portion including a curved tip surface projecting from the linear portion toward the gap, the linear portion and the first projecting portion being alternately arranged along the gap.

Abstract: Disclosed is a method for manufacturing a dye-sensitized solar cell including a transparent electrode (1), a counter electrode (2), an electrolyte layer (3) disposed between the electrodes (1) and (2), and a photocatalyst film (4) disposed between the electrodes (1) and (2) and near the transparent electrode (1), the method including: forming the photocatalyst film (4) by applying a mixed solution to a surface of the transparent electrode (1) and sintering the mixed solution by laser beam irradiation, the mixed solution containing fine particles of titanium oxide serving as photocatalyst fine particles and a solution of titanium isopropoxide serving as a photocatalyst precursor.

Abstract: A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.

Abstract: Provided are a stack-type beta battery generating a current from a beta source and a method of manufacturing the same. The method includes forming an oxide mask in a predetermined pattern on a surface of a substrate, forming a plurality of recesses by etching a region without the oxide mask from the substrate, removing the oxide mask and forming a PN-junction layer on the substrate, forming a first electrode on the PN-junction layer and forming a second electrode on another surface of the substrate, and forming a unit module by stacking a radioisotope layer on the PN-junction layer, the radioisotope layer emitting a beta ray. The beta battery can improve efficiency per unit area than a single layered beta battery by the number of stacked PN-junctions, and the process is simpler than a pore-forming process using DRIE, and manufacturing costs and time can be saved.

Abstract: Solar cells and methods of manufacturing the solar cells are provided. The solar cell may be formed on a substrate having a plurality of concave portions. A plurality of nanostructures may be formed on a surface of the substrate, in which the plurality of concave portions are formed. A photoactive layer may be formed to cover the plurality of nanostructures. The nanostructures may include an inorganic material, and the photoactive layer may include an organic material.

Abstract: A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.

Abstract: The present invention provides a method of forming a conductive electrode structure including: applying a conductive paste on a substrate; forming a conductive pattern having an outwardly convex shape by heat-treating the conductive paste; and forming a solder layer to conformally cover the conductive pattern.

Abstract: Characteristics of partially assembled photovoltaic modules can be determined using electrical connection apparatuses and methods.

Abstract: Disclosed herein is a conductive electrode pattern used as an electrode of a solar cell. The conductive electrode pattern includes a lower metal layer and an upper metal layer vertically disposed on a substrate, wherein any one of the lower metal layer and the upper metal layer includes silver (Ag) and the other one of the lower metal layer and the upper metal layer includes a metal of transition metals, different from that of the lower metal layer.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.

Abstract: According to the embodiments, a semiconductor substrate, an active layer that is formed on one surface of the semiconductor substrate, a wiring layer that is formed on the active layer and includes a wire to be a convex portion on a surface that is not in contact with the active layer, a insulation layer that is formed on the wiring layer to have a concave portion, an embedded layer that is provided on the concave portion of the insulation layer, a bonding layer that is provided on the insulation layer and the embedded layer, and a substrate that is bonded to the bonding layer to face one surface of the semiconductor substrate are included.

Abstract: Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

Abstract: The present invention discloses a wafer level image sensor packaging structure and a manufacturing method of the same. The manufacturing method includes the following steps: providing a silicon wafer, dicing the silicon wafer, providing a plurality of transparent lids, fabricating a plurality of semi-finished products, performing a packaging process, mounting solder balls, and cutting an encapsulant between the semi-finished products. The manufacturing method of the invention has the advantage of being straightforward, uncomplicated, and cost-saving. Thus, the wafer level image sensor package structure is lightweight, thin, and compact. To prevent the image sensor chip from cracking on impact during handling, the encapsulant will be arranged on the lateral sides of the semi-finished products during the packaging process.

Abstract: The present invention discloses a manufacturing method and structure of a wafer level image sensor module with package structure. The structure of the wafer level image sensor module with package structure includes a semi-finished product, a plurality of solder balls, and an encapsulant. The semi-finished product includes an image sensing chip and a wafer level lens assembly. The encapsulant is disposed on lateral sides of the image sensing chip and the wafer level lens assembly. Also, the manufacturing method includes the steps of: providing a silicon wafer, dicing the silicon wafer, providing a lens assembly wafer, fabricating a plurality of semi-finished products, performing a packaging process, mounting the solder balls, and cutting the encapsulant. Accordingly, the encapsulant encapsulates each of the semi-finished products by being disposed on the lateral sides thereof.

Abstract: A substrate processing system includes a source unit configured to supply a deposition material to a substrate, a substrate holder configured to hold a substrate to receive the deposition material, a shadow mask comprising a frame that includes two opposing arms; and a crossbar configured to be mounted to the two opposing arms. The frame and the crossbar define a plurality of openings that allow the deposition material supplied by the source unit to be deposited on the substrate. A transport mechanism can produce relative movement between the shadow mask and the substrate.

Abstract: A method for producing a solar cell electrode, comprising the steps of: applying on at least part of a light-receiving surface of a semiconductor substrate a conductive paste comprising conductive component, glass frit, and resin binder, wherein the conductive component comprises silver particles and core-shell particles in which a metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co is coated on a surface of silver or copper; and firing the conductive paste.

Abstract: The present invention provides a method for manufacturing an electrode for a solar cell, a substrate for the solar cell manufactured by the same, and a solar cell manufactured by the same. The present invention forms an electrode of a specific pattern through an offset printing system, and plates the electrode through a plating process to fill the metal-free region of a bus bar electrode with a plating metal and thus reduce the sheet resistance of the bus bar. The present invention obtains a finger electrode with a line with 100 microns or less through the combination of an offset printing process and a wet metal plating process. Further, the present invention obtains an electrode with an aspect ratio of 0.2 to 0.6 to reduce light shield effects and improve efficiency of the solar cell. The present invention eliminates the necessity of multilayer offset printing, and thus to reduce use of expensive conductive paste with might otherwise increase in proportion to the number of times printing is performed.

Abstract: A method is provided for producing a film of compound material. The method includes providing a substrate and depositing a film on the substrate. The deposited film has a first chemical composition that includes at least one first chemical element and at least one second chemical element. At least one residual chemical reaction is induced in the deposited film using a source containing at least one second chemical element to thereby increase the content of at least one second chemical element in the deposited film so that the deposited film has a second chemical composition. The content of at least one second element in the second chemical composition is larger than the content of at least one second element in the first chemical composition.

Abstract: Disclosed is an electrode member for specific detection of an analyte using a photocurrent. The electrode member has at least a conductive substrate and an electron-accepting substance provided on said conductive substrate. The aforementioned electron-accepting substance consists at least of a first substance layer that is made of a semiconductor and a second substance that is made of a semiconductor of a kind different from that of the aforementioned semiconductor, a metal or a metal oxide, and is carried on the surface of said first substance layer. With the electrode member, improved detection sensitivity for the test substance and improved measurement precision can be achieved with specific detection of an analyte using a photocurrent.

Abstract: Provided is an electronic device that generates an output signal corresponding to an input signal, comprising a signal processing section that receives the input signal and outputs the output signal corresponding to the input signal, and a floating electrode that accumulates a charge by being irradiated by an electron beam. The signal processing section adjusts electric characteristics of the output signal according to a charge amount accumulated in the floating electrode, and includes a transistor formed on the semiconductor substrate between an input terminal that receives the input signal and an output terminal that outputs the output signal.

Abstract: Disclosed is a method of manufacturing a CMOS image sensor, capable of preventing hillock-type defects caused by the delamination of interconnections from occurring in the CMOS image sensor.

Abstract: A voltage-operated layered arrangement comprising a substrate (1), a layered structure (2, 3, 4, 5) that is applied to the substrate and that comprises at least one electrically conductive functional layer (3) arranged between a first electrode (2) and a second electrode (4), and a field-degrading layer (5) that is less electrically conductive than the functional layer (3) and that is applied to the second electrode (4) arranged on the side of the layered structure remote from the substrate in such a way that it covers the second electrode (4) at least in the region of an edge (4a) and connects the second electrode (4) to the first electrode (2) electrically.

Abstract: Present embodiments relate to a semiconductor device having a backside redistribution layer and a method for forming such a layer. Specifically, one embodiment includes providing a substrate comprising a via formed therein. The substrate has a front side and a backside. The embodiment may further include forming a trench on the backside of the substrate, disposing an insulating material in the trench, and forming a trace over the insulating material in the trench.

Abstract: There is provided a semiconductor component including: a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type that is formed on the semiconductor substrate and is PN-joined with the semiconductor substrate; an insulator layer laminated on the semiconductor layer; a metal layer laminated on the insulator layer at a pre-specified region; a semiconductor of the second conduction type at a side of the semiconductor layer at which the insulating layer is laminated, the semiconductor being formed directly under the metal layer such that incident light that is incident from the metal layer side is not illuminated onto the semiconductor layer, and the semiconductor containing more impurities than the semiconductor layer; and a conduction portion that conducts between the metal layer and the semiconductor.

Abstract: A solar cell includes a semiconductor substrate, an n+ region and a p+ region disposed on the semiconductor substrate, a first electrode electrically connected to the n+ region, and a second electrode electrically connected to the p+ region. A trench formed in the semiconductor substrate separates the n+ region from the p+ region.

Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Abstract: A solar cell includes a first electrode disposed on a substrate, a first light absorption layer disposed on the first electrode, an interlayer disposed on the first light absorption layer, a second light absorption layer disposed on the interlayer, and a second electrode disposed on the second light absorption layer. The solar cell further includes a groove penetrating through the first light absorption layer, the interlayer, and the second light absorption layer. The groove is filled with the second electrode. The interlayer is spaced apart from the second electrode filling the groove, to define a spacer layer which electrically insulates the interlayer from the second electrode filling the groove.

Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: A photosensor includes a semiconductor thin film for photoelectric conversion having a first side portion and a second side portion. A source electrode extends in the longitudinal direction of the semiconductor thin film and has a side edge portion that overlaps the first side portion of the semiconductor thin film, and a drain electrode extends in the longitudinal direction and has a side edge portion that overlaps the second side portion of the semiconductor thin film. At least one of the side edge portions of the source and drain electrodes has protruding portions which are arranged along the longitudinal direction and which overlap the semiconductor thin film, and notched portions formed between the protruding portions. An ohmic contact layer is formed between the semiconductor thin film and the protruding portions of the at least one of the side edge portions of the source and drain electrodes.

Abstract: An object relates to an electrode of a semiconductor device or a method for manufacturing a semiconductor device, which includes a bonding step, and problems are: (1) high resistance of a semiconductor device due to the use of an Al electrode, (2) formation of an alloy by Al and Si, (3) high resistance of a film formed by a sputtering method, and (4) defective bonding in a bonding step which is caused if a bonding surface has a large unevenness. A semiconductor device includes a metal substrate or a substrate provided with a metal film, a copper (Cu) plating film over and bonded to the metal substrate or the metal film by employing a thermocompression bonding method, a barrier film over the Cu plating film, a single crystal silicon film over the barrier film, and an electrode layer over the single crystal silicon film.

Abstract: There are provided a TFT, a TFT substrate using the TFT, a method of fabricating the TFT substrate, and an LCD. The TFT includes a source region, a drain region, and a gate electrode having an opening. The opening of the gate electrode is to enhance the light sensing ability of the TFT when it is used as a light sensor, since light is incident into a region where the opening is formed. The TFT including the gate having the opening can be used in a substrate of a flat display or an LCD using such a substrate. The above TFT can sense light incident from outside the display to adjust the brightness of the screen according to the external illumination.

Abstract: An image sensing apparatus includes an image sensing region where a plurality of pixels are two-dimensionally arrayed. Each pixel includes a photoelectric conversion unit, and a semiconductor region arranged below an element isolation region having an insulation film to isolate the photoelectric conversion unit from an adjacent pixel. The semiconductor region includes a plurality of diffusion layers. The offset amount of at least one diffusion layer in the semiconductor region with respect to the normal line is larger in a pixel arranged at the peripheral portion of the image sensing region than a pixel arranged at the center of the image sensing region.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a sensor element disposed in a semiconductor substrate; an inter-level dielectric (ILD) disposed on the semiconductor substrate; and a trench disposed in the ILD, overlying and enclosing the sensor element, and filled with a first dielectric material.

Abstract: A conductive paste for grid electrodes in solar cells includes a conductive component, glass frit, and resin binder, wherein the conductive component is selected from the group consisting of (i) silver particles and metal particles selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co, (ii) alloy particles comprising silver and metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co, and (iii) silver particles and core-shell particles in which a metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co is coated on the surface of silver or copper.

Abstract: A light sensor located above an integrated circuit including a lower electrode, a heavily-doped amorphous silicon layer of a first conductivity type, and a lightly-doped amorphous silicon layer of a second conductivity type. The lightly-doped amorphous silicon layer rests on a planar surface at least above and in the vicinity of the lower electrode.

Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.

Abstract: Embodiments of the present invention provide a solar energy converter, which includes a silicon layer having at least two regions of a first and a second conductivity type that form a P-N junction, at least a portion of the silicon layer being porous, and pores in the portion of porous silicon containing a semiconductor material, the semiconductor material being different from silicon; and a first and a second electrode being placed at a bottom and a top surface of the silicon layer respectively. Methods of manufacturing the same are also provided.

Abstract: The present invention is to provide an electromagnetic wave detecting element that can prevent a decrease in light utilization efficiency at sensor portions. The sensor portions are provided so as to correspond to respective intersection portions of scan lines and signal lines, and have semiconductor layer that generate charges due to electromagnetic waves being irradiated, and at whose electromagnetic wave irradiation surface sides upper electrodes are formed, and at whose electromagnetic wave non-irradiation surface sides lower electrodes are formed. Bias voltage is supplied to the respective upper electrodes via respective contact holes by a common electrode line that is formed further toward an electromagnetic wave downstream side than the semiconductor layer.

Abstract: Provided is an image sensor and a method for manufacturing the same. In the image sensor, a semiconductor substrate has a readout circuitry formed thereon. An interlayer insulating layer including a lower metal line is on the semiconductor substrate, the lower metal line being electrically connected with the readout circuitry. A buffer insulating layer is on the interlayer insulating layer. A lower electrode penetrates the buffer insulating layer to be connected with the lower metal line. A crystalline semiconductor layer is on the buffer insulating layer, the crystalline semiconductor layer being partially connected with the lower electrode. A photodiode is in the crystalline semiconductor layer.