Abstract: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.

Abstract: An image sensing device and a method for forming the same are disclosed. The image sensing device includes a substrate including photoelectric conversion elements, and a grid structure disposed over the substrate. The grid structure includes an inner grid layer, and an outer grid layer formed outside the inner grid layer to provide air layer formed at a side surface and a top surface of the inner grid layer.

Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.

Abstract: An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region in the semiconductor substrate and a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.

Abstract: An imaging apparatus includes: an imaging device that has variable sensitivity and that acquires images with a sampling cycle; and a control circuit that controls the imaging device. The control circuit changes a sensitivity of the imaging device with a first cycle shorter than the sampling cycle. Based on control of the control circuit, the imaging device acquires a plurality of images of a subject with the sampling cycle. The subject includes a first component that changes with a second cycle different from the first cycle.

Abstract: Provided is an imaging device in which the degree of freedom in the layout can be improved. The imaging device includes a first substrate part that includes a sensor pixel to perform photoelectric conversion, and a second substrate part that is disposed on one surface side of the first substrate part and that includes a reading circuit to output a pixel signal based on an electric charge outputted from the sensor pixel. The second substrate part includes a first semiconductor substrate on which a first transistor included in the reading circuit is disposed, and a second semiconductor substrate which is disposed on one surface side of the first semiconductor substrate and on which a second transistor included in the reading circuit is disposed.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: An electronic component assembly having thermal pads with thermal vias coupling an image sensor and a camera board fab is provided for heat dissipation. The electronic component assembly can include: a circuit board having at least one thermal pad disposed on a top surface of the circuit board; and an image sensor disposed on the top surface of the circuit board, having at least one conductive pad disposed at at least one corner of the image sensor. The at least one thermal pad is coupled to the at least one conductive pad of the image sensor and the at least one thermal pad is formed with a plurality of first thermal vias penetrating the thermal pad and the circuit board for transfer of heat of the image sensor.

Abstract: A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

Abstract: An apparatus comprising a light projector, a sensor and a processor. The light projector may be configured to toggle a light pattern. The sensor may be configured to generate pixel data. The processor may be configured to process the pixel data arranged as video frames, extract IR images with the light pattern, IR images without the light pattern and RGB images from the video frames, generate a control signal in response to the IR images with the light pattern and the RGB images, calculate an IR interference measurement in response to the IR images without the light pattern and the RGB images and select a mode of operation for an IR channel control and an RGB channel control in response to the IR interference measurement. The control signal may be configured to adjust an exposure for the sensor.

Abstract: A multi-layer apparatus has a transparent or semi-transparent substrate, a solar-cell layer coupled to the substrate, an energy-storage layer coupled to the solar-cell layer, and a converter layer coupled to the energy-storage layer. The solar-cell layer has a plurality of solar cells for receiving light through the substrate and converting energy of the received light to a first electrical energy, the energy-storage layer has one or more energy-storage units for storing a second electrical energy, and the converter layer has one or more power converters electrically connected to the solar-cell layer and the energy-storage layer for receiving the first electrical energy and the second electrical energy therefrom and outputting a third electrical energy via an output thereof.

Abstract: An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Abstract: A photonic integrated circuit and a method for its manufacture are provided. In an embodiment, an intermetal dielectric layer, for example, a silicon oxide layer, is contiguous between an upper metal layer and a lower metal layer on a substrate. One or more waveguides having top and bottom faces are formed in respective waveguide layers within the intermetal dielectric layer between the upper and lower metal layers. There is a distance of at least 600 nm from the upper metal layer to the top face of the uppermost of the several waveguides. There is a distance of at least 600 nm from the lower metal layer to the bottom face of the lowermost of the several waveguides. The waveguides are formed of silicon nitride for longer wavelengths and alumina for shorter wavelengths. These dimensions and materials are favorable for CMOS processing, among other things.

Abstract: An imaging device includes a first structure 20, and a second structure 40, in which the first structure 20 includes a first substrate 21, a temperature detection element which is formed on the first substrate 21 and detects a temperature on the basis of an infrared ray, a signal line 71, and a drive line 72, the second structure 40 includes a second substrate 41, and a drive circuit provided on the second substrate 41 and covered with a covering layer 43, the first substrate 21 and a second electrode 41 are stacked, the signal line 71 is electrically connected with the drive circuit via a signal line connection portion 100, the drive line is electrically connected with the drive circuit via a drive line connection portion, and the signal line connection portion 100 includes a first signal line connection portion 102 formed in the first structure 20 and a second signal line connection portion 106 formed in the second structure 40.

Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

Abstract: A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, a metal grid disposed directly over the plurality of metal isolation features, and a plurality of microlens features disposed over the metal grid.

Abstract: A sensing apparatus including a sensing device, a light-transmitting protective layer, a light-shielding layer, a light-transmitting adhesive layer and a light guide device is provided. The light-transmitting protective layer is disposed on the sensing device. The light-shielding layer is disposed on the light-transmitting protective layer. The light shielding layer has a pinhole corresponding to the sensing device. The light-transmitting adhesive layer is disposed on the light-transmitting protective layer and at least in the pinhole. The light guide device is disposed on the light-transmitting adhesive layer and corresponds to the pinhole. There is a gap between the light guide device and the light shielding layer; and/or the refractive index of the light-transmitting adhesive layer is greater than the refractive index of the light guide device.

Abstract: A sensor device includes a sensor element, a substrate, and a bonding wire. Over the substrate, provided is the sensor element. The bonding wire forms at least part of a connection path that electrically connects the sensor element and the substrate together. The bonding wire is provided to connect two connection surfaces that intersect with each other.

Abstract: A camera device includes an image sensor including a pixel array and a logic circuit, with the camera device further comprising an optical module that includes a plurality of lenses arranged in a path of travel of light incident on the image sensor. The pixel array includes a plurality of pixels having a general pixel, a first autofocus pixel and a second autofocus pixel, and at least one of the plurality of lenses has an edge that extends in a first direction. A height of an upper surface of the microlens, included in the first autofocus pixel, is different from a height of an upper surface of the microlens included in the second autofocus pixel.

Abstract: A field effect transistor comprising: a first semiconductor structure, the first semiconductor structure having a channel layer; a second semiconductor structure, the second semiconductor structure is arranged on the first semiconductor structure, and the second semiconductor structure is stacked in sequence from bottom to top with a Schottky layer, a first etch stop layer, a wide recess layer, an ohmic contact layer, and a narrow recess, a wide recess is opened in the ohmic contact layer, so that the upper surface of the wide recess layer forms a wide recess area and the upper surface of the Schottky layer forms a narrow recess area; at least one delta-doped layer, a gate metal contact, the gate metal contact is formed inside the wide recess a source metal contact; and a drain metal contact, and the drain metal contact is located on the other side of the gate metal contact.

Abstract: An image pickup apparatus for endoscope includes a resin member in which an outer dimension of a third main surface is equal to an outer dimension of a second main surface, an image pickup member having a light receiving surface smaller than the second main surface, and having a first external electrode on a back surface covered by the resin member, a fan-out wiring provided to extend between an inside and an outside of an extension space, the extension space being an extension of the image pickup member in an optical axis direction, a first through wiring penetrating through the resin member, and provided in the inside of the extension space, a first bonding electrode connected with the external electrode through the first through wiring and the fan-out wiring and forming the fan-out wiring provided on the third main surface, and an electric cable bonded to the first bonding electrode.

Abstract: A display panel and a display device including the same are provided. The display panel includes a base substrate, a touch electrode and a plurality of signal lines electrically connected with the touch electrode. The base substrate incudes a display region and a non-display region outside the display region, and the touch electrode is within the display region and the plurality of signal lines are within the non-display region. The non-display region includes a light reflective uneven region including a reflective material layer, which includes an uneven surface facing away from the base substrate. The display panel further includes a light reduction structure within the non-display region above the reflective material layer, which is at least configured to reduce light reflected from the uneven surface of the reflective material layer, and the light reduction structure is separated from the plurality of signal lines and the touch electrode.

Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.

Abstract: An imaging unit includes: a semiconductor package including an optical system, an imaging sensor, and connection terminals; a rigid substrate including first connection lands respectively connected to the connection terminals; and an electronic component mount region including second connection lands on which a capacitor is mounted, and an inner lead mount region including third connection lands; and a flexible printed board including inner leads extended from one end of the flexible printed board in a bent manner and respectively connected to the third connection leads in the inner lead mount region; and cable connection leads arranged on another end of the flexible printed board and respectively connected to the inner leads. The rigid substrate and the flexible printed board are arranged in a projection plane in an optical axis direction of the semiconductor package. The third connection lands are arranged along one side of the rigid substrate.

Abstract: Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects are provided. An example optical interconnect joins first and second optical conduits. A first direct oxide bond at room temperature joins outer claddings of the two optical conduits and a second direct bond joins the inner light-transmitting cores of the two conduits at an annealing temperature. The two low-temperature bonds allow photonics to coexist in an integrated circuit or microelectronics package without conventional high-temperatures detrimental to microelectronics. Direct-bonded square, rectangular, polygonal, and noncircular optical interfaces provide better matching with rectangular waveguides and better performance. Direct oxide-bonding processes can be applied to create running waveguides, photonic wires, and optical routing in an integrated circuit package or in chip-to-chip optical communications without need for conventional optical couplers.

Abstract: A metallo-dielectric waveguide array used as an encapsulation material for silicon solar cells. The array is produced through light-induced self-writing combined with in situ photochemical synthesis of silver nanoparticles. Each waveguide comprises a cylindrical core consisting of a high refractive index polymer and silver nanoparticles homogeneously dispersed in its medium, all of which are surrounded by a low refractive index common cladding. These waveguide array films are processed directly over a silicon solar cell.

Abstract: The present invention provides a light-transmitting electrode which has high electrical conductivity and high electron blocking performance. The present invention also provides a solar cell which is capable of achieving high energy conversion efficiency at low cost. The present invention provides a method for producing a light-transmitting electrode that has a light-transmitting substrate, a carbon nanotube film which is formed directly or indirectly on the light-transmitting substrate, and a metal oxide film which is formed directly on the carbon nanotube film. This production method includes vapor depositing the metal oxide film, which contains oxygen and a metal element belonging to the group 4, 5 or 6 of the periodic table, on one surface or both surfaces of the carbon nanotube film. The present invention provides a light-transmitting electrode which includes a light-transmitting substrate and a conductive carbon nanotube film that is formed directly or indirectly on the light-transmitting substrate.

Abstract: The present technology relates to an imaging apparatus, a manufacturing apparatus, a manufacturing method, and an electronic appliance that contribute to miniaturization and thinning of an imaging apparatus. Provided is an imaging apparatus including a first circuit board in which an imaging element is mounted on a center portion, a component that is mounted on an outer circumference portion of the center portion of the first circuit board and a member that incorporates the component and is provided in the outer circumference portion and is formed by a mold method. The imaging apparatus further includes a lens barrel that holds a lens, in which a frame that supports a portion including the lens barrel is located on the member. Further, the frame includes an infra red cut filter (IRCF). The present technology can be applied to an imaging apparatus.

Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate, a floating diffusion, an amplifying transistor, first and second contact plugs, a wire, and a metal portion. The semiconductor substrate has a first plane and a second plane to be entered by light, and includes a photoelectric conversion element. The amplifying transistor includes a first gate electrode. The first contact plug is connected to the floating diffusion. The second contact plug is connected to the first gate electrode. The wire is configured to electrically connect the first gate electrode and the floating diffusion to each other. The metal portion, which is arranged between the first plane and a third plane, covers at least a part of the photoelectric conversion element in a planar view, and has an opening over which at least a part of the wire is superimposed in a planar view.

Abstract: In an embodiment, an optoelectronic measuring device includes a first detector configured to provide a first detector signal, a second detector configured to provide a second detector signal, wherein each of the first detector and the second detector is configured to detect electromagnetic radiation, a signal difference determiner configured to generate a difference signal by subtracting the second detector signal from the first detector signal and a spectral filter arranged in a beam path upstream of the second detector, wherein the spectral filter is configured to filter the electromagnetic radiation before detection by the second detector, wherein the optoelectronic measuring device is configured to measure an intensity of the electromagnetic radiation impinging on the optoelectronic measuring device.

Abstract: Connector structures and methods of forming the same are provided. A method includes forming a first patterned passivation layer on a workpiece, the first patterned passivation layer having a first opening exposing a conductive feature of the workpiece. A seed layer is formed over the first patterned passivation layer and in the first opening. A patterned mask layer is formed over the seed layer, the patterned mask layer having a second opening exposing the seed layer, the second opening overlapping with the first opening. A connector is formed in the second opening. The patterned mask layer is partially removed, an unremoved portion of the patterned mask layer remaining in the first opening. The seed layer is patterned using the unremoved portion of the patterned mask layer as a mask.

Abstract: An embodiment optical test circuit includes a first optical circuit and a second optical circuit formed on a substrate, an input optical waveguide optically connected to the first optical circuit and the second optical circuit, and an output optical waveguide optically connected to the first optical circuit and the second optical circuit. The optical test circuit also includes a light emitting diode optically connected to the input optical waveguide, and a photodiode optically connected to the output optical waveguide.

Abstract: CMOS image sensor with LED flickering reduction and low color cross-talk are disclosed. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Each pixel includes a plurality of large subpixels (LPDs) and at least one small subpixel (SPD). A plurality of color filters are disposed over individual subpixels. Each individual SPD is laterally adjacent to at least one other SPD.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first plurality of interconnects arranged within a first inter-level dielectric (ILD) structure on a first substrate, and a second plurality of interconnects arranged within a second ILD structure between the first ILD structure and a second substrate. A bonding structure is disposed within a recess extending through the second substrate. A connector structure is vertically between the first plurality of interconnects and the second plurality of interconnects. The second plurality of interconnects include a first interconnect directly contacting the bonding structure. The second plurality of interconnects also include one or more extensions extending from directly below the first interconnect to laterally outside of the first interconnect and directly above the connector structure, as viewed along a cross-sectional view.

Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.

Abstract: A rewiring region 22 is provided in a region other than a pixel region 21 on a front face (pixel formation surface) FA of an imaging element 20. A mold part 30 is formed around the imaging element 20 other than on the front face FA. Rewiring layers 41b, 42b, and 43b that connect an external terminal and a pad 23 provided in the rewiring region 22 are formed via insulating layers 41a, 42a, and 43a on a side of the pixel formation surface of the imaging element 20 and the mold part 30. Therefore, connection to a substrate can be made possible even if the spacing between the pads is narrowed, a mounting surface of an imaging device 10 is also on the side of the pixel formation surface, and reduction in size and height can be achieved.

Abstract: An image sensor device is provided. The image sensor device includes a substrate. The image sensor device includes a light-sensing region in the substrate. The image sensor device includes an isolation structure in the substrate. The isolation structure surrounds the light-sensing region. The image sensor device includes a grid layer over the substrate. The grid layer is over the isolation structure. The image sensor device includes a first lens over the light-sensing region and surrounded by the grid layer. The image sensor device includes a color filter layer over and in direct contact with the first lens. The first lens is embedded in the color filter layer. The image sensor device includes a second lens over the color filter layer.

Abstract: A camera device includes: a lens carrier that holds a lens body; and a blade driving device that drives a blade arranged on a front side of the lens body, wherein the lens carrier has a metallic carrier side receiving portion extending forward from a front end of the lens carrier, the blade driving device has a metallic blade side receiving portion protruding sideward or rearward from a side surface or a bottom surface of the blade driving device, and the carrier side receiving portion and the blade side receiving portion are fixed and electrically connected.

Abstract: A lens module and a manufacturing method of the lens module are provided. The manufacturing method includes the following steps. Firstly, a circuit substrate is provided. Then, an image sensor chip is placed on a top surface of the circuit substrate. Then, plural electrical connection paths are formed between the image sensor chip and the circuit substrate. Then, plural stacking spacer structures are formed on a top surface of the image sensor chip by a stacking process. Then, plural protective sidewalls are formed to cover the electrical connection paths. Then, a glass substrate is placed over the stacking spacer structures. Then, a lens holder structure is placed on a substrate top surface of the glass substrate directly. The glass substrate is supported by the stacking spacer structures. Consequently, the glass substrate can be maintained at the position over the image sensor chip.

Abstract: The present technology relates to an electromagnetic wave processing device that enables suppression of a ripple. Provided are a photoelectric conversion element, a narrow band filter stacked on a light incident surface side of the photoelectric conversion element and configured to transmit an electromagnetic wave having a desired wavelength, and interlayer films respectively formed above and below the narrow band filter, and the narrow band filter is formed in a shape with a level difference. The level difference is formed for each photoelectric conversion element. Alternatively, the level difference is formed between the photoelectric conversion elements and in the interlayer film. The present technology can be applied to an imaging element or a sensor using a plasmon filter or a Fabry-Perot interferometer.

Abstract: A light detection device including a substrate, a first light detector, a second light detector, and a switch element is provided. The first light detector is disposed on the substrate and includes a first active layer. The second light detector is disposed between the substrate and the first light detector and includes a second active layer. The switch element is disposed on the substrate. A horizontal projection of the second active layer on the substrate completely falls within a horizontal projection of the first active layer on the substrate. A negative electrode of the first light detector and a negative electrode of the second light detector are electrically connected to the switch element via a first metal layer.

Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: The present disclosure relates to the field of display technology, and provides a display substrate and a method for manufacturing the same. The display substrate includes: a light-emitting substrate comprising a plurality of light-emitting regions which are arranged in parallel with a light propagation direction, and each light-emitting region is provided with a light-emitting layer; a defining layer provided on the light-emitting substrate and including a plurality of hollow-out portions, and the hollow-out portions correspond to the light-emitting regions one to one; and a plurality of micro-lenses provided in the hollow-out portions in a one-to-one correspondence manner. With the present disclosure, it is possible to prevent damage to an underlying light-emitting substrate when forming the micro-lenses and to enhance the stability of the micro-lenses.

Abstract: A method for producing an aperture array for a microlens array, in particular for a microlens array of a vehicle headlamp, comprising at least the following steps: providing a wafer having a microlens array arranged on a first wafer surface, masking a second wafer surface of the wafer by means of a shadow mask, wherein the shadow mask includes a negative of the aperture array, coating the masked wafer surface with an opaque layer, removing the shadow mask and obtaining the aperture array on the second wafer surface.

Abstract: A light-emitting substrate includes a base and a plurality of light-emitting units disposed on the base. A light-emitting unit includes a driving voltage terminal, and a main driver chip pad group, a plurality of main light-emitting element pad groups connected in series and at least one spare light-emitting element pad group. Both ends of the plurality of main light-emitting element pad groups are coupled to the driving voltage terminal and the main driver chip pad group. Each spare light-emitting element pad group is connected in parallel with one of the plurality of main light-emitting element pad groups to constitute a pad unit.