Abstract: In a method for manufacturing an energy ray detection device including a first semiconductor region disposed below a first area on a surface of a semiconductor substrate, a second semiconductor region disposed below a second area on the surface and connected to a contact portion, and a third semiconductor region disposed below a third area on the surface between the first area and the second area, the first semiconductor region and the third semiconductor region are formed on the semiconductor substrate by performing ion implantation through a buffer film that covers the first area and the third area, a portion of the buffer film that covers the third area having a thickness smaller than a portion of the buffer film that covers the first area.

Abstract: The present invention provides a wavelength conversion-type photovoltaic cell sealing material, the sealing material including at least one light emitting layer containing a group of spherical phosphors, the group of spherical phosphors having a ratio of a median value D50 of the group of spherical phosphors to a total thickness t of the light emitting layer of from 0.1 to 1.0, where the median value D50 is a median value of a volume particle size distribution of the group of spherical phosphors, and an integrated value N of a number particle size distribution from D25 to D75 of the group of spherical phosphors being 5% or more, when D25 is a particle size value at 25% of an integrated value of the volume particle size distribution of the group of spherical phosphors and D75 is a particle size value at 75% of the integrated value of the volume particle size distribution of the group of spherical phosphors; and a photovoltaic cell module including the sealing material.

Abstract: There is provided a phosphor blend for an LED light source comprising from about 25 to about 35 weight percent of a cerium-activated yttrium aluminum garnet phosphor, from about 5 to about 10 weight percent of a europium-activated strontium calcium silicon nitride phosphor, and from about 50 to about 75 weight percent of a europium-activated calcium magnesium chlorosilicate phosphor. An LED light source in accordance with this invention has a B:G:R ratio for a 5500 K daylight balanced color film of X:Y:Z when directly exposed through a nominal photographic lens, wherein X, Y and Z each have a value from 0.90 to 1.10.

Abstract: Photodetectors, methods for use in manufacturing photodetectors, and systems including photodetectors, are described herein. In an embodiment, a photodetector includes a plurality of photodiode regions, at least some of which are covered by an optical filter. A plurality of metal layers are located between the photodiode regions and the optical filter. The metal layers include an uppermost metal layer that is closest to the optical filter and a lowermost metal layer that is closest to the photodiode regions. One or more inter-level dielectric layers separate the metal layers from one another. Each of the metal layers includes one or more metal portions and one or more dielectric portions. The uppermost metal layer is devoid of any metal portions underlying the optical filter.

Abstract: A solid-body X-ray image detector and method of manufacturing the same are disclosed. The detector has a circular surface area arrangement of CCD or CMOS detector pixels on a substrate, a scintillator arranged on the substrate, and a circular detector surface area, wherein the substrate comprises a single, substantially circular silicon wafer and the detector surface area takes up the surface area of the silicon wafer up to a narrow edge region.

Abstract: A thermal conductivity and phase transition heat transfer mechanism has an opto-luminescent phosphor contained within the vapor chamber of the mechanism. The housing includes a section that is thermally conductive and a member that is at least partially optically transmissive, to allow emission of light produced by excitation of the phosphor. A working fluid also is contained within the chamber. The pressure within the chamber configures the working fluid to absorb heat during operation of the lighting device, to vaporize at a relatively hot location at or near at least a portion of the opto-luminescent phosphor as the working fluid absorbs heat, to transfer heat to and condense at a relatively cold location, and to return as a liquid to the relatively hot location. Also, the working fluid is in direct contact with or contains at least a portion of the opto-luminescent phosphor.

Abstract: A thermal conductivity and phase transition heat transfer mechanism incorporates an active optical element. Examples of active optical elements include various phosphor materials for emitting light, various electrically driven light emitters and various devices that generate electrical current or an electrical signal in response to light. The thermal conductivity and phase transition between evaporation and condensation, of the thermal conductivity and phase transition heat transfer mechanism, cools the active optical element during operation. At least a portion of the active optical element is exposed to a working fluid within a vapor tight chamber of the heat transfer mechanism. The heat transfer mechanism includes a member that is at least partially optically transmissive to allow passage of light to or from the active optical element and to seal the chamber of the heat transfer mechanism with respect to vapor contained within the chamber.

Abstract: A method of manufacturing a radiological image detection apparatus includes: bonding a phosphor to a sensor panel constructed such that a plurality of photoelectric conversion elements are arranged on a substrate; connecting a wiring member to a connection portion that is provided on a front face of the sensor panel opposite to the phosphor and that is electrically connected to the photoelectric conversion elements; covering with a first protective film the connection portion connected to the wiring member; peeling off the substrate from the sensor panel in which the first protective film is formed; and covering, with a second protective film having a moisture prevention property, at least a part corresponding to the connection portion in a rear face of a sensor portion exposed when the substrate is peeled off from the sensor panel.

Abstract: A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.

Abstract: Portable digital X-ray detectors are provided. One X-ray detector includes an outer assembly and a detector assembly disposed within the outer assembly. The detector assembly includes an imager having a scintillator that converts radiographic energy to light and a detector array having one or more detector elements that detect the light from the scintillator. The detector assembly also includes electronic circuitry mounted on at least one printed circuit board and adapted to control operation of the imager during data acquisition and readout. Further, an elastomeric assembly is disposed between the imager and the electronic circuitry, and the elastomeric assembly is configured to absorb backscattered X-rays that pass through the imager or deflect off of a portion of the outer assembly during an X-ray exposure.

Abstract: In accordance with one embodiment, a digital X-ray detector is provided. The detector includes a scintillator layer configured to absorb radiation emitted from a radiation source and to emit optical photons in response to the absorbed radiation. The detector also includes a complementary metal-oxide-semiconductor (CMOS) light imager that is configured to absorb the optical photons emitted by the scintillator layer. The CMOS light imager includes a first surface and a second surface, and the first surface is disposed opposite the second surface. The scintillator layer contacts the first surface of the CMOS light imager.

Abstract: A method of manufacturing a radiological image detection apparatus having: a scintillator that emits fluorescence upon exposure to radiation; and a photodetecting unit disposed on a radiation entrance side of the scintillator, the method includes: a photodetecting unit production process for layering on a substrate a protective member that exhibits low radiation absorbency than that exhibited by the substrate and forming a thin film portion that detects the fluorescence as an electric signal on the protective member, thereby producing the photodetecting unit; a substrate peel-removal process for peeling and eliminating the substrate from the protective member; and an integration process for integrating the previously-produced scintillator and the photodetecting unit before or after the substrate peel-removal process.

Abstract: A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.

Abstract: A tiled imager panel is disclosed. In certain embodiments, the tiled imager panel is formed from separate imager chips that are mechanically tiled together so as to minimize the gap between the tiled imager chips. In addition, in certain embodiments, a scintillator material associated with the tiled imager panel is in a hermetically sealed environment so as to be protected from moisture.

Abstract: Provided is a light emitting diode (LED) package. The LED package includes a package main body, first and second electrode structures, first and second LED chips, and first and second resin packing parts. The package main body includes a concave portion and a barrier wall dividing the concave portion into at least first and second accommodation recesses. The first and second electrode structures are formed at the package main body and are exposed at bottom surfaces of the first and second accommodation recesses respectively. The first and second LED chips are electrically connected to the first and second electrode structures are respectively mounted on the bottom surfaces of the first and second accommodation recesses. The first and second resin packing parts include at least one fluorescent material and are formed in the first and second accommodation recesses for packing the first and second LED chips.

Abstract: Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.

Abstract: A radiological image detection apparatus, includes: two scintillators that convert irradiated radiation into lights; and a photodetector arranged between two scintillators, that detects the lights converted by two scintillators as an electric signal; in which: an activator density in the scintillator arranged at least on a radiation incident side out of two scintillators in vicinity of the photodetector is relatively higher than an activator density in the scintillator on an opposite side to a photodetector side.

Abstract: A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer.

Abstract: A method for making a lighting apparatus includes providing a substrate and disposing a light-emitting diode overlying the substrate. The light-emitting diode has a top surface oriented away from the substrate and a plurality of side surfaces. A light-conversion material is provided that includes a substantially transparent base material and a wave-shifting material dispersed in the base material. The concentration of the wave-shifting material can be at least 30%. In an embodiment, the concentration of the wave-shifting material can be approximately 50% or 70%. A predetermined amount of the light-conversion material is deposited on the top surface of the light-emitting diode while the side surfaces are maintained substantially free of the light-conversion material.

Abstract: An image sensor device (and method of making same) that includes a substrate with front and back opposing surfaces, a plurality of photo detectors formed at the front surface, and a plurality of contact pads formed at the front surface which are electrically coupled to the photo detectors. A cavity is formed into the back surface. A plurality of secondary cavities are formed into a bottom surface of the cavity such that each secondary cavity is disposed over one of the photo detectors. Absorption compensation material having light absorption characteristics that differ from those of the substrate is disposed in the secondary cavities. A plurality of color filters are each disposed in the cavity or in one of the secondary cavities and over one of the photo detectors. The plurality of photo detectors are configured to produce electronic signals in response to light incident through the color filters.

Abstract: Embodiments of radiographic imaging systems; digital radiography detectors and methods for using the same can include radiographic imaging pixel unit cells that can include a plurality of N pixel elements that each include a photoelectric thin-film conversion element connected in-series to a conversion thin-film switching element, a conductor connected to the plurality of N pixel elements and an output switching element connected between the conductor and an imaging array output. Scan lines or row lines can extend in a first direction coupled to more than one pixel unit cell and data lines or column lines can extend in a second direction coupled to more than one pixel unit cell.

Abstract: Disclosed is a flexible radiation detector including a substrate, a switching device on the substrate, an energy conversion layer on the switching device, a top electrode layer on the energy conversion layer, a first phosphor layer on the top electrode layer, and a second phosphor layer under the substrate.

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a wavelength-selective layer disposed on the substrate, wherein the structures comprise a crystalline semiconductor material.

Abstract: A scintillator element (114) comprising uncured scintillator material (112) is formed and optically cured to generate a cured scintillator element (122, 122?). The uncured scintillator material suitably combines at least a scintillator material powder and an uncured polymeric host. In a reel to reel process, a flexible array of optical detectors is transferred from a source reel (100) to a take-up reel (106) and the uncured scintillator material (112) is disposed on the flexible array and optically cured during said transfer. Such detector layers (31, 32, 33, 34, 35) are stackable to define a multi-layer computed tomography (CT) detector array (20). Detector element channels (50, 50?, 50?) include a preamplifier (52) and switching circuitry (54, 54?, 54?) having a first mode connecting the preamplifier with at least first detector array layers (31, 32) and a second mode connecting the preamplifier with at least second detector array layers (33, 34, 35).

Abstract: A radiation detector is provided including plural pixels, a planarizing layer, a conductive layer and a light emitting layer. Each of the pixels is provided with a sensor portion including a switching element formed on a substrate and a photoelectric conversion element that is formed on the substrate and generates charge according to illuminated light. The planarizing layer is formed on the plural pixels. The conductive layer is formed on the planarizing layer in a mesh formation. The light emitting layer is formed with a non-columnar member of grain-shaped crystals that emit light according to irradiated radiation laminated on the planarizing layer and the conductive layer and a columnar member of columnar crystals formed on the non-columnar member.

Abstract: A radiation detector is provided that includes: plural pixels, each provided with a sensor portion including a switching element formed on a substrate and a photoelectric conversion element that is formed on the substrate and generates charge according to illuminated light; a planarizing layer formed on the plural pixels and including a light-blocking member with antistatic properties formed in a portion of the planarizing layer; and a light emitting layer that is formed on the planarizing layer and emits light according to irradiated radiation.

Abstract: A photoelectric conversion substrate includes: plural pixels, each provided with a sensor portion and a switching element that are formed on the substrate, the sensor portion including a photoelectric conversion element that generates charge according to illuminated light, and the switching element reading the charge from the sensor portion, a flattening layer that flattens the surface of the substrate having the switching elements and the sensor portions formed thereon, a conducting member formed over the whole face of the flattening layer; and a connection section that connects the conducting member to ground.

Abstract: A thermal conductivity and phase transition heat transfer mechanism incorporates an active optical element. Examples of active optical elements include various phosphor materials for emitting light, various electrically driven light emitters and various devices that generate electrical current or an electrical signal in response to light. The thermal conductivity and phase transition between evaporation and condensation, of the thermal conductivity and phase transition heat transfer mechanism, cools the active optical element during operation. At least a portion of the active optical element is exposed to a working fluid within a vapor tight chamber of the heat transfer mechanism. The heat transfer mechanism includes a member that is at least partially optically transmissive to allow passage of light to or from the active optical element and to seal the chamber of the heat transfer mechanism with respect to vapor contained within the chamber.

Abstract: In a method for manufacturing an energy ray detection device including a first semiconductor region disposed below a first area on a surface of a semiconductor substrate, a second semiconductor region disposed below a second area on the surface and connected to a contact portion, and a third semiconductor region disposed below a third area on the surface between the first area and the second area, the first semiconductor region and the third semiconductor region are formed on the semiconductor substrate by performing ion implantation through a buffer film that covers the first area and the third area, a portion of the buffer film that covers the third area having a thickness smaller than a portion of the buffer film that covers the first area.

Abstract: Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.

Abstract: A radiation detecting device is manufactured by a method that includes forming a scintillator layer on a substrate carrying a plurality of photodetectors and a plurality of convex patterns each including a plurality of convexities, the plurality of convex patterns coinciding with the respective photodetectors, the scintillator layer being formed in such a manner as to extend over the plurality of convex patterns; and forming a crack in a portion of the scintillator layer that coincides, in a stacking direction, with a gap between adjacent ones of the convex patterns by cooling the substrate carrying the scintillator layer. The plurality of convex patterns satisfy specific conditions.

Abstract: There is provided a light emitting device which makes it possible to reduce optical loss and improve brightness by increasing a ratio of fluorescent light that is not reabsorbed by a light emitting element while decreasing a ratio of scattered light that is reabsorbed by the light emitting element. Individual faces forming outer faces of the light emitting element 2 are in contact with a bonding member 3 or sealing member 4. The bonding member 3 and the sealing member 4 contain a fluorophor. Emitted light emitted from the faces of the light emitting element 2 is transformed into fluorescent light by the fluorophor. Therefore, the ratio of scattered light that is not transformed from the emitted light into the fluorescent light can be decreased while the ratio of fluorescent light is increased.

Abstract: The OLED display device includes a first stack and a second stack that are separated from each other between an anode electrode and a cathode electrode, with a charge generation layer sandwiched between the first stack and the second stack, each of the first stack and the second stack having an emission layer. The first stack includes a blue emission layer formed between the anode electrode and the CGL. The second stack includes a fluorescent green emission layer and a phosphorescent red emission layer formed between the cathode electrode and the CGL. The blue emission layer includes one of a fluorescent blue emission layer and a phosphorescent blue emission layer.

Abstract: A solar concentrator module (80) employs a luminescent concentrator material (82) between photovoltaic cells (86) having their charge-carrier separation junctions (90) parallel to front surfaces (88) of photovoltaic material 84 of the photovoltaic cells (86). Intercell areas (78) covered by the luminescent concentrator material (82) occupy from 2 to 50% of the total surface area of the solar concentrator modules (80). The luminescent concentrator material (82) preferably employs quantum dot heterostructures, and the photovoltaic cells (86) preferably employ low-cost high-efficiency photovoltaic materials (84), such as silicon-based photovoltaic materials.

Abstract: A method of manufacturing a radiological image detection apparatus includes: bonding a phosphor to a sensor panel constructed such that a plurality of photoelectric conversion elements are arranged on a substrate; connecting a wiring member to a connection portion that is provided on a front face of the sensor panel opposite to the phosphor and that is electrically connected to the photoelectric conversion elements; covering with a first protective film the connection portion connected to the wiring member; peeling off the substrate from the sensor panel in which the first protective film is formed; and covering, with a second protective film having a moisture prevention property, at least a part corresponding to the connection portion in a rear face of a sensor portion exposed when the substrate is peeled off from the sensor panel.

Abstract: A method of manufacturing a radiological image detection apparatus having: a scintillator that emits fluorescence upon exposure to radiation; and a photodetecting unit disposed on a radiation entrance side of the scintillator, the method includes: a photodetecting unit production process for layering on a substrate a protective member that exhibits low radiation absorbency than that exhibited by the substrate and forming a thin film portion that detects the fluorescence as an electric signal on the protective member, thereby producing the photodetecting unit; a substrate peel-removal process for peeling and eliminating the substrate from the protective member; and an integration process for integrating the previously-produced scintillator and the photodetecting unit before or after the substrate peel-removal process.

Abstract: Embodiments of sensor systems and related methods of operating and manufacturing the same are described herein. The sensor systems can be used to detect atomic or subatomic particles or radiation. Other embodiments and related methods are also disclosed herein.

Abstract: Methods and devices for solar cell interconnection are provided. In one embodiment, the method includes physically alloying the ink metal to the underlying foil (hence excellent adhesion and conductivity with no pre-treatment), and by fusing the solid particles in the ink on the surface (eliminating any organic components) so that the surface is ideally suited for good conductivity and adhesion to an overlayer of finger ink, which is expected to be another adhesive. In some embodiments, contact resistance of conductive adhesives are known to be much lower on gold or silver than on any other metals.

Abstract: A radiological image detection apparatus includes: a first scintillator and a second scintillator that emit fluorescent lights in response to irradiation of radiation; and a first photodetector and a second photodetector that detect the fluorescent lights; in which the first photodetector, the first scintillator, the second photodetector, and the second scintillator are arranged in order from a radiation incident side, and a high activator density region in which an activator density is relatively higher than an average activator density in a concerned scintillator is provided to at least one of the first scintillator located in vicinity of the first photodetector and the second scintillator located in vicinity of the second photodetector.

Abstract: A radiological image detection apparatus, includes: two scintillators that convert irradiated radiation into lights; and a photodetector arranged between two scintillators, that detects the lights converted by two scintillators as an electric signal; in which: an activator density in the scintillator arranged at least on a radiation incident side out of two scintillators in vicinity of the photodetector is relatively higher than an activator density in the scintillator on an opposite side to a photodetector side.

Abstract: According to one embodiment, an optical device includes a lead, an optical element, and a sealing layer. The optical element is provided on the lead. The sealing layer is provided so as to cover the optical element. An upper surface of the sealing layer has a central portion including an optical axis of the optical element, a protrusion including an inner side surface surrounding the central portion and an outer side surface facing outward, and a connecting portion provided below the inner side surface and between the inner side surface and the central portion. The connecting portion includes a rounded portion on at least one of the inner side surface side and the central portion side. The outer side surface of the protrusion has average value of gradient angle larger than average value of gradient angle of a surface of the central portion.

Abstract: A method and a system are provide for forming planar precursor structures which are subsequently converted into thin film solar cell absorber layers. A precursor structure is first formed on the front surface of the foil substrate and then planarized through application of force or pressure by a smooth surface to obtain a planar precursor structure. The precursor structure includes at least one of a Group IB material, Group IIIA material and Group VIA material. The planar precursor structures are reacted to form planar and compositionally uniform thin film absorber layers for solar cells.

Abstract: A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.

Abstract: There is provided a radiation detector including: a light detecting substrate that converts light into charges; a scintillator layer that faces the light detecting substrate and converts irradiated radiation into light; and a reflecting portion that reflects light, converted at the scintillator layer, toward the light detecting substrate, and is disposed so as to face the scintillator layer and so as to be able to be displaced relative to the scintillator layer in an in-plane direction.

Abstract: The present invention provides a radiation detector that may set output characteristics of an electrical signal for output so as to match the detection range of an amplifier. Namely, a charge storage capacitor is provided to each sensor section so as to be electrically connected to a bias line in parallel to the respective sensor section.

Abstract: A radiation detection apparatus comprising semiconductor substrates each having a first surface on which a photoelectric conversion portion is formed and a second surface opposite to the first surface; a scintillator layer, placed over the first surfaces of the semiconductor substrates, for converting radiation into light; and an elastic member, placed between a base and the second surfaces, for supporting the second surfaces of the semiconductor substrates such that the first surfaces of the semiconductor substrates are flush with each other is provided. In measurement of the elastic member as a single body, an amount of stretch of a cubic specimen in a direction parallel to the first surface when being compressed in a direction perpendicular to the first surface is smaller than an amount of stretch of the specimen in the direction perpendicular to the first surface when being compressed in the direction parallel to the first surface.

Abstract: A radiation detection apparatus comprising: a sensor panel including a photoelectric conversion region and an electrically conductive pattern that is electrically connected to the photoelectric conversion region; a scintillator layer disposed over the photoelectric conversion region of the sensor panel; a wiring member including a portion overlapping with the electrically conductive pattern and electrically connected to the electrically conductive pattern and; and a protective film covering the scintillator layer and the portion of the wiring member that overlaps with the electrically conductive pattern is provided. A region of the protective film that covers the wiring member includes a portion that is press-bonded to the sensor panel.

Abstract: A solid-body X-ray image detector and method of manufacturing the same are disclosed. The detector has a circular surface area arrangement of CCD or CMOS detector pixels on a substrate, a scintillator arranged on the substrate, and a circular detector surface area, wherein the substrate comprises a single, substantially circular silicon wafer and the detector surface area takes up the surface area of the silicon wafer up to a narrow edge region.

Abstract: An IC chip coating material includes first metal oxide particles; a metal alkoxide; an organic solvent; and second metal oxide particles and/or flat particles of a composite oxide, the second metal oxide particles having a composition identical to or different from that of the first metal oxide particles and also having a mean particle size and/or a shape different from that of the first metal oxide particles. Further, a vacuum fluorescent display device includes an IC chip, wherein the IC chip is at least partially coated by a coating material layer including the first metal oxide particles; a metal forming metal alkoxide; and the second metal oxide particles and/or flat particles of a composite oxide.

Abstract: In a method for producing a photovoltaic cell, the improvement comprising: 1) coating a portion of a semiconductor substrate with a layer of a composition comprising donor element-containing glass particles and a dispersion medium, and 2) heating the coated semiconductor substrate to a temperature sufficient to cause donor element diffusion from the glass particles into the semiconductor substrate so as to form an n-type diffusion region in the semiconductor substrate.