Abstract: Light emitting devices include a blue LED that emits blue light having a peak wavelength between 430 nanometers and 480 nanometers and a recipient luminophoric medium that includes luminescent materials that down-convert a portion of the blue light emitted by the blue LED to light having a peak wavelength that is between about 500 nanometers and about 545 nanometers. The combination of the blue light emitted by the blue LED and the light emitted by the luminescent materials in the recipient luminophoric medium comprises light that is perceived as blue light having a color point that falls within the region on the 1931 CIE Chromaticity Diagram defined by ccx, ccy chromaticity coordinates of (0.1355, 0.0399), (0.175, 0.0985), (0.1743 0.1581), (0.1096, 0.0868), (0.1355, 0.0399).

Abstract: An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an LED chip emitting light with a peak wavelength of 350 nm or less, and a protective member provided so that surroundings of the LED chip is covered to protect the LED chip, the protective member having a non-yellowing property to energy from the LED chip.

Abstract: A color light-emitting diode using a blue light component to produce red light and green light is disclosed. A blue-light emitting material is provided between a cathode layer and an anode layer for emitting the blue light component. A light re-emitting layer has a first material in a first diode section arranged to produce a red light component in response to the blue light component, and a second material in a second diode section arranged to produce a green light component in response to the blue light component. A transparent material in a third diode section allows part of the blue light component to transmit through. The anode layer is partitioned into three electrode portions separately located in the three diode sections, so that the red, green and blue light components in the diode sections can be separately controlled.

Abstract: A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts.

Abstract: The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the substrate, and a wavelength conversion layer formed on the light emitting layer or on the back of the substrate. The wavelength conversion layer is formed of a Group III nitride semiconductor doped with rare earth elements. The rare earth elements include at least one of Tm, Er and Eu. According to a light emitting diode of the present invention, a desired color can be implemented in various ways by converting the wavelength of primary light emitted from a light emitting chip. Thus, the reliability and quality of products can be improved due to the uniform emission of light with a desired color. Further, since the existing semiconductor process can be utilized in the present invention, its fabrication process can be simplified, process cost and time can be reduced, and the compact products can be obtained.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: A housing for an optoelectronic component including a main housing body formed by a first plastics material, and which has a recess, and a coating formed by a second plastics material, and which, at least in a region of the recess, connects at least in places to the main housing body and is in direct contact with the main housing body, wherein the first plastics material is different from the second plastics material, and the first plastics material and the second plastics material differ from one another with regard to at least one of the following material properties: temperature resistance with regard to discoloration, temperature resistance with regard to deformation, temperature resistance with regard to destruction, and resistance to electromagnetic radiation.

Abstract: An organic light-emitting device including a substrate, an anode layer on the substrate, the anode layer including WOxNy (2.2?x?2.6 and 0.22?y?0.26), an emission structure layer on the anode layer, and a cathode layer on the emission structure layer.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.

Abstract: There is provided a light emitting device package including: a package substrate; a blue light emitting device and a green light emitting device mounted on the package substrate; a flow prevention part formed on the package substrate and substantially enclosing the blue light emitting device; and a wavelength conversion part including a red wavelength conversion material and formed on a region defined by the flow prevention part to cover the blue light emitting device, so that white light having a high degree of color reproducibility may be emitted thereby.

Abstract: The present invention relates to the field of a light emitting device (1), comprising a light emitting diode (2) arranged on a submount (3), said device having a lateral circumference surface (6) and a top surface (8), and an optically active coating layer (7), said coating layer (7): covering along at least a part of said circumference surface (6), extending from the submount (3) to said top surface (8), and essentially not covering the top surface (8). A method for producing the device is also disclosed.

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract: An OLED display includes a substrate; a first electrode on the substrate; an organic emission layer on the first electrode; a second electrode on the organic emission layer; an organic layer on the second electrode and corresponding to the first electrode; and an auxiliary electrode contacting the second electrode and neighboring the organic layer.

Abstract: A semiconductor light emitting device includes a substrate having a wiring pattern formed thereon, and a semiconductor light emitting element mounted on one main surface of the substrate and electrically connected to the wiring pattern. The substrate has, on the one main surface, a serrated structure reflecting at least part of light emitted from said semiconductor light emitting element to the substrate, to a direction perpendicular to the one main surface.

Abstract: The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.

Abstract: A method of forming a sampled grating includes the steps of preparing a substrate; preparing a nano-imprinting mold including a pattern surface on which projections and recesses are periodically formed; preparing a mask including a light obstructing portion and a light transmitting portion that are alternately provided; forming a photoresist layer and a resin portion in that order on the substrate; forming a patterned resin portion having projections and recesses by pressing the pattern surface of the mold into contact with the resin portion and hardening the resin portion while maintaining the contact; exposing a portion of the photoresist layer by irradiating the photoresist layer with exposing light through the mask and the patterned resin portion; forming a patterned photoresist layer by developing the photoresist layer; and etching the substrate using the patterned photoresist layer.

Abstract: Provided is a liquid crystal display including: a first substrate; a thin film transistor disposed on the first substrate; a passivation layer disposed on the thin film transistor and comprising a contact hole exposing an electrode of the thin film transistor; a pixel electrode disposed on the passivation layer and connected to the electrode of the thin film transistor through the contact hole; a lower buffer layer disposed on the pixel electrode; a lower alignment layer disposed on the lower buffer layer; a second substrate facing the first substrate; a common electrode disposed on the second substrate; an upper buffer layer disposed on the common electrode; and an upper alignment layer disposed on the upper buffer layer, in which the lower buffer layer comprises parylene, the upper buffer layer comprises parylene, or both the lower and the upper buffer layers comprise parylene.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence contains at least one active layer for generating primary radiation. In addition, the semiconductor layer sequence includes a plurality of conversion layers, the conversion layers being designed to absorb the primary radiation at least partially and to convert it into secondary radiation of a longer wavelength than the primary radiation. Furthermore the semiconductor layer sequence comprises a roughening which extends at least into the conversion layers.

Abstract: A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.

Abstract: A solid-state light source has light emitting diodes embedded in a thermally conductive translucent luminescent element. The thermally conductive translucent luminescent element has optically translucent thermal filler and at least one luminescent element in a matrix material. A leadframe is electrically connected to the light emitting diodes. The leadframe distributes heat from the light emitting diodes to the thermally conductive translucent luminescent element. The thermally conductive translucent luminescent element distributes heat from light emitting diodes and the thermally conductive translucent luminescent element.

Abstract: A low-power light-emitting device which can be manufactured in simple steps and is suitable for increasing definition and the size of a substrate is provided. The light-emitting device includes a layer for blocking visible light; a conductive layer that partly overlaps with the layer for blocking visible light; a color filter layer that includes an opening over the layer for blocking visible light; a first electrode layer for transmitting visible light that is connected to the conductive layer through the opening, over the color filter layer; an insulating partition over the first electrode layer overlapping with the opening; a layer containing an organic compound over the first electrode layer and the partition; and a second electrode layer over the layer containing an organic compound. The layer containing an organic compound includes a layer containing a donor substance and an acceptor substance and a layer containing a light-emitting organic compound.

Abstract: According to one embodiment, a semiconductor light emitting device includes a metal substrate, a first semiconductor layer, a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first intermediate layer and a second intermediate layer. The substrate has a coefficient of thermal expansion not more than 10×10?6 m/K. The first and second semiconductor layer include a nitride semiconductor. The second semiconductor layer is provided between the substrate and the first semiconductor layer. The emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first intermediate layer is provided between the substrate and the second semiconductor layer. The second intermediate layer is provided between the first intermediate layer and the second semiconductor layer. a surface roughness of a first surface of the substrate contacting the first intermediate layer is less than a thickness of the first intermediate layer.

Abstract: A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding the plurality of element units. The method causes the particles in the resin liquid to sink and forms a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece. The method raises a temperature of the workpiece to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion. In addition, the method divides the optical layer and the resin layer for the plurality of element units.

Abstract: A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.

Abstract: An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. The phosphor-containing material comprises at least two quantities of different phosphor particles and are arranged in a densely packed layer within the coating at the light emitting surface. The densely packed layer of phosphor particles does not extend all the way through the coating.

Abstract: A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.

Abstract: An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a resin layer and a conductive material. The conductive material is provided on a surface of the resin layer between the first metal pillar and the second metal pillar, and electrically connects the first metal pillar and the second metal pillar.

Abstract: A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED).

Abstract: A light emitting device includes: a light emitting chip arranged on a substrate; a resin lens which covers the light emitting chip and focuses irradiation light from the light emitting chip; a mask which covers a region of an upper layer surface of the substrate, other than the resin lens; and a low surface tension film formed on a region of the upper layer surface of the substrate, other than in the proximity of the light emitting chip.

Abstract: An LED package includes a substrate, an electrode structure, an LED die, a packaging portion, and a covering portion. The electrode structure is formed on the substrate. The LED die is mounted on the substrate, and electrically connected to the electrode structure. The packaging portion covers the LED die. The covering portion surrounds a periphery of the LED package and seals a joint between the substrate, the electrode structure and the packaging portion. The covering portion is made of silicone-titanate resin with reactive monomers, wherein the reactive monomers comprises more than 60% of heptane, 7.0% to 13.0% of allyltrimethoxysilane, 5.0% to 10.0% of tetrabutyl titanate, and less than 0.1% of tetramethoxysilane.

Abstract: Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, a first light extracting structure layer having a concave-convex structure on the passivation layer, a first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer, and a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the light extracting structure layer.

Abstract: The present invention relates to a full-band and high-CRI organic light-emitting diode, comprising: a first conductive layer, at least one first carrier transition layer, a plurality of light-emitting layers, at least one second carrier transition layer, and a second conductive layer. In the present invention, a plurality of dyes are doped in the light-emitting layers, so as to make the light-emitting layers emit a plurality of blackbody radiation complementary lights, wherein the chromaticity coordinates of the blackbody radiation complementary lights surround to a specific area on 1931 CIE (Commission International de'Eclairage) Chromaticity Diagram, moreover, the specific area fully encloses the Planck's locus on 1931 CIE Chromaticity Diagram, such that the blackbody radiation complementary lights mix to each other and then become a full-band and high-CRI light.

Abstract: A light emitting diode package includes a light emitting diode, an insulating layer, a plurality of light emitting particles, and a plurality of metal particles. The light emitting diode is configured to emit first light of a first wavelength in a visible light range. The insulating layer is disposed on the light emitting diode. The plurality of light emitting particles is dispersed in the insulating layer and is configured to receive the first light to generate a second light of a second wavelength different from the first wavelength. The plurality of metal particles is dispersed in the insulating layer, and is configured to receive at least one light component of the first light and the second light to cause, at least in part, surface plasmon resonance, the surface plasmon resonance being configured to yield a resonance wave comprising a peak wavelength in the range of the second wavelength.

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.

Abstract: This substrate (11) for a device (50) that collects or emits radiation comprises a transparent polymer layer (1) and a barrier layer (2) on at least one face (1A) of the polymer layer. The barrier layer (2) consists of an antireflection multilayer of at least two thin transparent layers (21, 22, 23, 24) having both alternately lower and higher refractive indices and alternately lower and higher densities, wherein each thin layer (21, 22, 23, 24) of the constituent multilayer of the barrier layer (2) is an oxide, nitride or oxynitride layer.

Abstract: An organic electro-luminescence (EL) display device according to the present invention includes: a main substrate; a display section provided above the main substrate and including a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and a bank; a blue color filter provided above the display section, which selectively transmits blue light and selectively absorbs green light and red light; and a red color filter provided above the display section, which selectively transmits the red light and selectively absorbs the blue light and the green light, wherein the blue color filter has openings each at a position corresponding to the red light-emitting layer or the green light-emitting layer, and the red color filter has openings each at a position corresponding to the green light-emitting layer or the blue light-emitting layer.

Abstract: A light emitting element includes a first electrode, an organic layer formed on the first electrode, a resistance layer formed on the organic layer, a second electrode, and a conductive resin layer formed between the resistance layer and the second electrode.

Abstract: The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.

Abstract: A light emitting device based on a AlInGaN materials system wherein a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2. In a preferred embodiment the coating is made from Ta2O5, Nb2O5, TiO2, or SiC and has a thickness between about 0.01 and 10 microns. A surface of a coating material may be textured or shaped to increase its surface area and improve light extraction. A surface of the coating material can also be shaped to engineer the directionality of light escaping the layer. A coating can be applied directly to a surface or multiple surfaces of a light emitting device or can be applied onto a contact material. A coating may also serve as a passivation or protection layer for a device.

Abstract: A radiation-emitting body comprising a layer sequence, having an active layer (10) for generating electromagnetic radiation, having a reflection layer (50), which reflects the generated radiation, and having at least one intermediate layer (40) arranged between the active layer (10) and the reflection layer (50). In this case, the active layer (10) has a roughening on an interface (15) directed toward the reflection layer (50), and the reflection layer (50) is substantially planar at an interface (45) directed toward the active layer (10). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer (10) for generating electromagnetic radiation. In this case, the method comprises roughening an interface (15) on the active layer (10), and forming at least one intermediate layer (40) and a reflection layer (50).

Abstract: Disclosed is a wavelength-converting converter material comprising at least one wavelength-converting phosphor comprising phosphor particles, wherein a portion of said phosphor or all of said phosphor is present in the form of nanoparticles. Also disclosed is a light-emitting optical component comprising such a converter material and a method for producing such components.

Abstract: An AlInGaN light emitting device having a coating is used to improve the extraction of light from a device. A coating has a very low optical loss and an index of refraction greater than 2, preferably having an index of refraction close to or greater than the index of refraction of GaN. The coating can be made from Ta2O5, Nb2O5, TiO2, or SiC and has can have a thickness between 0.01 and 10 microns. A surface of the coating material may be textured or shaped to increase its surface area and improve light extraction. A coating can be applied directly to one or multiple surfaces of the light emitting device or can be applied onto a contact material and can serve as a passivation or as a protection layer for a device.

Abstract: A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.

Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.

Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.