Abstract: A light-emitting diode (LED) cutting method includes the following steps: positioning and retaining an LED die or an LED epitaxial substrate on a die retainer; introducing a liquid medium for preventing reflection of sound wave between a cutting tool and the die; activating a power source to drive a magnetostrictive material or piezoelectric ceramic material mounted on a machine to serve as a kinetic source by inducing volume expansion/compression that generates an up-and-down piston-like movement; and operating the cutting tool having super hard micro-particles of diamond, CBN, or SiC electroformed on the cutting tool to perform breaking cutting on an LED workpiece.

Abstract: An LED device comprises an LED chip or LED chip array for emitting light of a color spectrum, the LED chip or array being mounted on a component having a component surface. At least one color is applied to the component surface where the color is selected to reflect light to color tune the light emitted from the LED device to obtain a desired CRI.

Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.

Abstract: An object is to reduce variations in programming behavior from memory element to memory element. Furthermore, an object is to obtain a semiconductor device with excellent writing characteristics and in which the memory element is mounted. The memory element includes a first conductive layer, a metal oxide layer, a semiconductor layer, an organic compound layer, and a second conductive layer, where the metal oxide layer, the semiconductor layer, and the organic compound layer are interposed between the first conductive layer and the second conductive layer; the metal oxide layer is provided in contact with the first conductive layer; and the semiconductor layer is provided in contact with the metal oxide layer. By use of this kind of structure, variations in programming behavior from memory element to memory element are reduced.

Abstract: A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing a step function In-content profile.

Abstract: Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the semiconductor substrate that includes the impurity material.

Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

Abstract: Provided are a phosphor, a phosphor manufacturing method, and a white light emitting device. The phosphor is represented as a chemical formula of aMO-bAlN-cSi3N4, which uses light having a peak wavelength in a wavelength band of about 350 nm to about 480 nm as an excitation source to emit visible light having a peak wavelength in a wavelength band of about 480 nm to about 680 nm. (where M is one selected from alkaline earth metals (0.2?a/(a+b)?0.9, 0.05?b(b+c)?0.85, 0.4?c/(c+a)?0.9)).

Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.

Abstract: A light emitting device includes a plurality of LEDs that each emit light. A wavelength conversion member converts wavelengths of at least part of the light emitted from the LEDs to at least one other wavelength, and outputs light obtained by combining light having at least two wavelengths emitted from the wavelength conversion member. At least part of a light emitting surface of the wavelength conversion member has a surface state that differs from other parts of the light emitting surface.

Abstract: An optoelectronic component, includes a carrier, a metallic mirror layer arranged on the carrier, a first passivation layer arranged on a region of the metallic mirror layer, a semiconductor layer that generates an active region during electrical operation arranged on the first passivation layer, a second passivation layer including two regions, wherein the first region is arranged on a top face of the semiconductor layer, and the second region which is free of the semiconductor layer is arranged on the metallic mirror layer, and wherein the first and second regions are separated from one another by a region which surrounds the first passivation layer and which is free of the second passivation layer.

Abstract: An LED device comprises a substrate, an LED chip and a luminescent conversion layer. The substrate comprises a first electrode, a second electrode and a reflector located on top faces of the first and the second electrodes. The LED chip is disposed on the first electrode and electrically connected to the first and the second electrodes. The luminescent conversion layer is located inside the reflector and comprises a first luminescent conversion layer and a second luminescent conversion layer with different specific gravities. A manufacturing method for the LED device is also provided.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A light emitting device package is provided comprising a substrate, a light source unit disposed on the substrate and a dam unit spaced apart from the light source unit and disposed on the substrate, wherein the dam unit including silicon resin and metal oxide, and the metal oxide is contained in an amount of 5 wt % to 150 wt % based on a total amount of the silicon resin.

Abstract: An optical system and a method of fabrication are provided. The optical system includes a substrate and at least one hole extending from a second side of the substrate towards a first side of the substrate and configured to receive at least one optical fiber. The substrate includes at least one photodetector at the first side or between the at least one hole and the first side and configured to be in an optical path of an optical signal emitted from the at least one optical fiber or transmitted through the first side to the at least one optical fiber.

Abstract: A semiconductor light emitting device includes: a semiconductor lamination including a first semiconductor layer of a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conductivity type formed on the active layer; a rhodium (Rh) layer formed on one surface of the semiconductor lamination; a light reflecting layer containing Ag, formed on the Rh layer and having an area smaller than the Rh layer; and a cap layer covering the light reflecting layer. Migration of Ag is suppressed.

Abstract: A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.

Abstract: Disclosed is a semiconductor light emitting element (1), which includes: an n-type semiconductor layer (140); a light emitting layer (150), which is laminated on one surface of the n-type semiconductor layer (140) such that a part of the surface is exposed, and which emits light when a current is carried therein; a p-type semiconductor layer (160) laminated on the light emitting layer (150); a multilayer reflection film (180), which is configured by alternately laminating low refractive index layers (180a) and high refractive index layers (180b) that have a refractive index higher than that of the low refractive index layers (180a) and also have transparency with respect to light emitted from the light emitting layer (150), and which is laminated on the exposed portion of the n-type semiconductor layer (140), the exposed portion being on one side of the n-type semiconductor layer; an n-conductor portion (400), which is formed by penetrating the multilayer reflection film (180), and which has one end thereof c

Abstract: A method of forming a flexible display apparatus includes: forming a flexible substrate on a support substrate; forming a light-emitting diode on the flexible substrate; forming a first encapsulation layer on the light-emitting diode; forming a second encapsulation layer; bonding the first encapsulation layer to the second encapsulation layer using an adhesive layer between the first encapsulation layer and the second encapsulation layer; separating the support substrate from the flexible substrate and cutting the flexible substrate to form the flexible display apparatus; and forming a polarizing plate on the second encapsulation layer.

Abstract: A solid state lighting component comprising a layer having high reflectivity and/or scattering properties, the layer positioned about a solid state lighting component, and manufacturing methods of making same is disclosed. A method of increasing the luminous flux of the solid state lighting component, is also provided.

Abstract: It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

Abstract: The disclosure provides a light-emitting device comprising a substrate, an intermediate layer formed on the substrate, a first doped semiconductor layer with first conductivity-type formed on the intermediate layer, a second doped semiconductor layer with second conductivity-type formed on the first doped semiconductor layer, an active layer formed between the first doped semiconductor layer and the second doped semiconductor layer, and a patterned surface having a plurality of ordered pattern units; wherein the patterned surface is substantially not parallel to the corresponding region of the surface of the active layer.

Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Abstract: A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film.

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

Abstract: A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.

Abstract: A semiconductor light-emitting device which includes: a single-crystal substrate formed with a plurality of projection portions on a c-plane main surface; an intermediate layer which is formed to cover the main surface of the single-crystal substrate, in which a film thickness t2 on the projection portion is smaller than a film thickness t1 on the c-plane surface, in which the film thickness t2 on the projection portion is 60% or more of the film thickness t1 on the c-plane surface, and which includes AlN having a single-crystal phase on the c-plane surface and a polycrystalline phase on the projection portion; and a semiconductor layer which is formed on the intermediate layer and includes a group III nitride semiconductor.

Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.

Abstract: A light-emitting device having a through-hole cavity is disclosed. The optical device may contain a plurality of conductors, a light source die, a body and a transparent encapsulant material. The body may have a top surface and a bottom surface. A cavity is formed within the body extending from the bottom surface to the top surface and defining therein a bottom opening and a top opening, respectively. Optionally, the light-emitting device may comprise a lens. During manufacturing process, liquid or semi-liquid form transparent material is injected from the bottom surface into the cavity, encapsulating the light source die and forming a lens. The shape of the lens is defined by a mold aligned to the top opening of the body. In yet another embodiment, optical devices having a cavity or multiple cavities are disclosed. The optical devices may include a proximity sensor, an opto-coupler, an encoder and other similar sensors.

Abstract: A mechanically flexible array of optically pumped vertical cavity surface emitting lasers, fabricated using spin coating. The array uses InGaP colloidal quantum dots as an active medium and alternating polymer layers of different refractive indices as Bragg mirrors. Enhanced spontaneous emission is produced. The flexible array can be peeled off a substrate, producing a flexible structure that can conform to a wide variety of shapes, and having an emission spectrum that can be mechanically tuned. The flexible array can be used to create a flexible infrared light bandage.

Abstract: A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract: Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A light-emitting diode (10) includes a transparent substrate and a compound semiconductor layer that contains a light-emitting part (12) containing a light-emitting layer (133) formed of (AlXGa1-X)YIn1-YP (0?X?1 and 0<Y?1) joined to the transparent substrate (14). The light-emitting diode (10) has on a main light-extracting surface thereof a first electrode (15) and a second electrode (16) different in polarity from the first electrode. The transparent substrate has side faces that are a first side face (142) roughly perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) inclined relative to the light-emitting surface on a side distant from the light-emitting layer and coarsened with irregularities falling in a range of 0.05 ?m to 3 ?m.

Abstract: The present invention is directed to the provision of a semiconductor light-emitting element that has an electrode formed with a desired thickness using a plated metal layer. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate includes a semiconductor layer including a light-emitting layer, an N-side bump electrode for connecting the semiconductor layer to the circuit substrate, and a P-type bump electrode for connecting the semiconductor layer to the circuit substrate, wherein the N-side bump electrode and the P-type bump electrode each include an under-bump metal layer and a plated metal layer, the under-bump metal layer includes a high-reflectivity metal layer disposed on a side that faces the semiconductor layer and a metal layer disposed on a side opposite from the semiconductor layer, and the plated metal layer has a thickness not less than 3 ?m but not greater than 30 ?m.

Abstract: A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices.

Abstract: A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.

Abstract: An LED package comprises a substrate, a reflector, a light-absorbing layer, an encapsulation layer and an LED chip. The light-absorbing layer is located around the reflector and is able to absorb any light which penetrates through the reflector. Therefore, any vignetting or halation of light from the LED package is prevented. Moreover, the LED package can be constructed on a very small scale with no reduction in its color rendering properties.

Abstract: An LED package includes a substrate, a transparent base, an LED chip and a reflective layer. The substrate has an upper surface. The transparent base is arranged on the upper surface of the substrate. The transparent base includes a first surface away from the substrate and a second surface opposite to the first surface. The LED chip is arranged on the first surface of the transparent base. The reflective layer is arranged between the substrate and the second surface of the transparent base.

Abstract: The present disclosure is directed to an LED assembly that is compatible for use with a night vision imaging system or any other system that requires an LED with specific transmission or rejection wavelength bands. Such LEDs may emit selective wavelength bands anywhere between 400 nm and 700 nm of the electromagnetic spectrum while limiting selective wavelength bands anywhere between 700 and 1200 nanometers. In one embodiment, the LED is manufactured by coating one or more inorganic thin film optical coatings onto the LED and then protecting the LED and thin film optical coating with a resin encapsulant. In other embodiments, additional near infrared photochemical or color correcting dyes are incorporated directly into the encapsulant.

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive type semiconductor layer having a first top surface and a second top surface under the first top surface, an active layer on the first top surface of the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, a first electrode on the second top surface of the first conductive type semiconductor layer, an intermediate refractive layer on the second top surface of the first conductive type semiconductor layer, and a second electrode connected to the second conductive type semiconductor layer.

Abstract: An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device.

Abstract: An optoelectronic component includes a connection carrier on which at least two radiation-emitting semiconductor chips are arranged, a conversion element fixed to the connection carrier, wherein the conversion element spans the semiconductor chips such that the semiconductor chips are surrounded by the conversion element and the connection carrier, and at least two of the radiation-emitting semiconductor chips differ from one another with regard to wavelengths of electromagnetic radiation they emit during operation, wherein the conversion element spans the semiconductor chips as a dome.

Abstract: A thermal stress releasing structure is applied to a light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer includes a plurality of first material layers and a plurality of second material layers. The first material layers and the second material layers are alternately stacked in a staggered manner to form a concave-convex structure in a stacking direction of the first and second material layers. The concave-convex structure is formed in a corrugated shape to function as the thermal stress releasing structure, thus is capable of releasing thermal stress generated by thermal expansion and contraction of the buffer layer in the LED to prevent the buffer layer from damaging a metal layer or an epitaxy layer.

Abstract: A light-emitting diode (LED) packaging structure having low angular correlated color temperature deviation includes: a substrate, a LED chip, a phosphor body, and a transparent lens. The LED chip is disposed on the substrate, and the phosphor body includes a hemisphere body and an extension part extended from the bottom of the hemisphere body. The phosphor body is disposed on the substrate and covers the LED chip. Besides, the transparent lens is disposed outside the phosphor body to cover the phosphor body to increase light extraction efficiency. With the implementation of the present invention, the setup of the extension part makes a longer vertical distance between the LED chip and the top of the phosphor body, so that the light in the normal direction of the LED chip can have a longer optical length, thereby to reduce the angular correlated color temperature deviation.