Abstract: When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion and a coiled antenna portion are disposed by being stacked together; therefore, it is possible to prevent a current from flowing through a conductive layer occupying a large area included in the memory circuit portion, and thus, power saving can be achieved. In addition, the memory circuit portion and the coiled antenna portion are disposed by being stacked together, and thus, it is possible to use a space efficiently. Therefore, downsizing can be realized.

Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Abstract: A highly moisture-resistant liquid crystal display apparatus and a manufacturing method thereof suppresses display deterioration due to the occurrence of image retention without gap controllability and alignment-stability maintenance. The liquid crystal display apparatus includes: a first sealing member arranged at an outer periphery of a liquid crystal layer sandwiched between a pair of substrates; and a second sealing member arranged at an outer periphery of the first sealing member in contact with the pair of substrates. The second sealing member 16 is formed from an alkylsiloxane compound as a main ingredient which is formed into an inorganic film by irradiation with an ultraviolet radiation. The alkylsiloxane compound is a di-alkylsiloxane compound or di-methyl-siloxane compound.

Abstract: A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.

Abstract: An integrated circuit includes a substrate. The substrate includes diffusion lines. The diffusion lines include impurities diffused into the substrate. A signal line layer includes first signal lines. A first metal layer includes second signal lines. The second signal lines include a first metallic material. A second metal layer includes third signal lines. The third signal lines include a second metallic material. First contacts connect the diffusion lines to (i) a first set of the second signal lines, or (ii) a first set of the third signal lines. Second contacts connect a first set of the first signal lines to a second set of the third signal lines. Each signal line in a first set of the second signal lines includes first portions and second portions. The first portions extend towards and are not connected to the second contacts. The first portions are not parallel to the second portions.

Abstract: Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, field effect transistors, and photodetectors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Abstract: Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement.

Abstract: A memory array includes a first layer, a second layer, a third layer and a contact. The first layer is disposed on a substrate. The second layer includes a first conductive line. The first conductive line includes first line segments and second line segments. Each of the second line segments are connected to a respective one of the first line segments. The first line segments extend in a first direction on the first layer. The second line segments extend in a second direction on the first layer. The first direction is different than the second direction. The third layer is disposed on the second layer. The contact is disposed through the second layer and connects the third layer to the first conductive line. One of the first line segments extends towards the contact. Each of the first and second line segments are at least a predetermined distance from the contact.

Abstract: Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.

Abstract: Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Abstract: A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.

Abstract: A semiconductor material and an organic rectifier diode can be used for organic-based RFID (Radio Frequency Identification) tags. The semiconducting material for an organic diode has a metal complex as a p-dopant for doping a hole-conducting organic matrix material, wherein the metal complex is a metal complex with Lewis acid properties, which acts as an electron pair acceptor.

Abstract: A memory array including a diffusion layer, a poly layer, a metal one layer, a metal two layer, and a contact. The diffusion layer comprises diffusion lines extending in a first direction. The poly layer comprises poly lines extending in the first direction and being arranged on top of and insulated from the diffusion layer. The metal one layer comprises metal one lines extending in the first direction and being arranged on top of and insulated from the poly layer. The metal two layer comprises a metal two line extending in the first direction and being arranged on top of and insulated from the metal one layer. The contact extends through the poly layer, and connects a metal one line to a diffusion line. A poly line further extends in a second direction to bend around the contact such that a predetermined distance separates the poly lines from the contact.

Abstract: To provide a memory element, a memory device, and a semiconductor device, which can be easily manufactured at low cost; are nonvolatile and data-rewritable; and have preferable switching properties and low operating voltage. A memory element of the invention includes a first conductive layer, a second conductive layer facing the first conductive layer, and an organic compound layer provided between the first and the second conductive layers. For the organic compound layer, a high molecular material having an amide group at least at one kind of side chains is used.

Abstract: An organic memory device having a memory active region formed by an embossing structure. This invention provides an organic memory device including a substrate, a first electrode formed on the substrate, an organic memory layer formed on the first electrode, a second electrode formed on the organic memory layer and an embossing structure provided at the organic memory layer to form a memory active region.

Abstract: There is provided a high-sensitivity organic semiconductor radiation/light sensor and a radiation/light detector which can detect rays in real time. In the high-sensitivity organic semiconductor radiation/light sensor, a signal amplification wire 2 is embedded in an organic semiconductor 1. Carriers created by passage of radiation or light are avalanche-amplified by a high electric field generated near the signal amplification wire 2 by means of applying a high voltage to the signal amplification wire 2, thus dramatically improving detection efficiency of rays. Hence, even rays exhibiting low energy loss capability can be detected in real time with high sensitivity.

Abstract: The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.

Abstract: The presently disclosed embodiments are directed to the detection and monitoring of corona effluent. The present embodiments pertain to a corona sensing device that employs a film of organic charge transporting material, as the active component in a corona effluent sensing device, that is disposed onto a patterned electrode bearing support member.

Abstract: This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided.

Abstract: Semiconductor device, comprising a substrate with a first electrode and having a layer of organic material deposited over the substrate and the first electrode; and a second electrode deposited over the layer of organic material, wherein the second electrode comprises a dielectric layer that is separated from the layer of organic material by the material of the second electrode.

Abstract: The present invention is a two-state switching device based on two electrodes separated by a self-assembled monolayer. At least one of the electrodes may be composed of silver and the other electrode of any electrically conductive material, such as metals, especially gold or platinum. In the high-resistance OFF state, the two electrodes are separated by an organic monolayer having sufficiently low electrical conducting as to be considered non-conductive. Application of a negative threshold bias causes a silver ion filament to grown within the monolayer and bridge the gap between the two electrodes, changing the device into a low-resistance ON state. The device may be turned OFF by application of a positive threshold bias, which causes the ionic filament to retract back into the silver electrode.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: An integrated circuit includes a plurality of signal lines. A first signal line layer includes a plurality of first signal lines. A second signal line layer includes a plurality of second signal lines arranged on top of and insulated from the first signal line layer. A third signal line layer includes a plurality of third signal lines arranged on top of and insulated from the second signal line layer. A contact extends through the second signal line layer and connects at least one of the plurality of third signal lines to at least one of the first signal lines. At least one of the second signal lines further extends in a second direction to bend around the contact such that a predetermined distance separates the plurality of second signal lines from the contact.

Abstract: Disclosed herein are an organic memory device and a method for fabricating the memory device. The organic memory device may include a first electrode, a second electrode and an organic active layer between first and second electrodes, wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound. Because the organic memory device possesses decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, the organic memory device may be used as a highly integrated large-capacity memory device.

Abstract: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

Abstract: The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer.

Abstract: A method and tamper detection circuit for implementing tamper and anti-reverse engineering evident detection in a semiconductor chip, and a design structure on which the subject circuit resides are provided. A capacitor is formed with the semiconductor chip including the circuitry to be protected. A change in the capacitor value results responsive to the semiconductor chip being thinned, which is detected and a tamper-detected signal is generated.

Abstract: A reflex coupler has an organic light emitter for generating a light signal and an inorganic photodetector with a detector area. The organic light emitter and the detector area are optically coupled as a result of radiation returned from an object onto which the light signal impinges, and the organic light emitter and the inorganic photodetector are integrated in one device.

Abstract: A highly moisture-resistant liquid crystal display apparatus which is capable of suppressing display deterioration due to occurrence of image retention without impairing properties including gap controllability and alignment stability maintenance, and a manufacturing method thereof, are provided. The liquid crystal display apparatus includes: a first sealing member 15 arranged at an outer periphery of a liquid crystal layer 17 sandwiched between a pair of substrates 11 and 12; and a second sealing member 16 arranged at an outer periphery of the first sealing member 15 in contact with the pair of substrates 11 and 12. The second sealing member 16 is formed from an alkylsiloxane compound as a main ingredient which is formed into an inorganic film by irradiation with an ultraviolet radiation. The alkylsiloxane compound is a di-alkylsiloxane compound or di-methyl-siloxane compound.

Abstract: A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

Abstract: A diode includes an organic composite plate, a first electrode and a second electrode. The organic composite plate includes a first portion, a second portion and a plurality of carbon nanotubes distributed therein. The carbon nanotubes in the first portion have a first band gap and the carbon nanotubes in the second portion have a second band gap. The first band gap and the second band gap are different from each other. The first electrode is electrically connected to the first portion. The second electrode electrically is connected to the second portion.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: A display device having a first light-emitting element, a second light-emitting element, a constant current source, and an amplifier is provided. Each of the first light-emitting element and the second light-emitting element has a first layer including an organic compound and an inorganic compound and a second layer including a light-emitting substance, which are stacked between a pair of electrodes. The first layer is provided over the second layer. Alternatively, the second layer is provided over the first layer.

Abstract: An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

Abstract: Passive memory devices comprising a support having at least one conductive surface or surface layer and having on at least one side of the support a passive memory element, the passive memory element comprising a first electrode system, an insulating system and a second electrode system, wherein the first electrode system is insulated from the second electrode system, wherein the first electrode system is a conductive surface, or a conductive layer of a support, the second electrode system is a plurality of isolated conductive areas and/or a plurality of conducting pins isolated from one another; and conductive bridges are present between at least one of the isolated conductive area, or at least one of the conducting pins, and the first electrode system; wherein with the exception of the first electrode system being a conductive surface of a support, the systems and the conductive bridges are printable using conventional printing processes.

Abstract: Disclosed is an organic non-volatile memory (ONVM) material including nanoparticles evenly dispersed in a first polymer. The nanoparticles have a metal core covered by a second polymer to form a core/shell structure, and the first polymer has a higher polymerization degree and molecular weight than the second polymer. The ONVM material of the invention has high uniformity, thereby stabilizing the electric properties of the memory device, such as increasing rewrite counts, increasing data retention time, reducing driving voltage, reducing write current, and enhancing current on/off ratio.

Abstract: A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.

Abstract: A producing method of a wired circuit board includes the step of preparing a wired circuit board including an insulating layer and a conductive pattern having a wire covered with the insulating layer and a terminal portion exposed from the insulating layer; and the step of forming a semiconductive layer on a surface of the insulating layer by dipping the wired circuit board in a polymeric liquid of a conductive polymer in which an electrode is provided, and applying a voltage so that the electrode becomes an anode and the conductive pattern becomes a cathode.

Abstract: An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

Abstract: A switching device contains a thin film containing an organic material disposed between at least two electrodes, and the organic material is, for example, a triphenylamine compound represented by the general formula (I):

Abstract: The present polymer composite p-n junction includes an n-type polymer composite layer and a p-type polymer composite layer. The n-type composite polymer layer includes a first polymer material and a number of electrically conductive particles imbedded therein. The p-type composite polymer layer includes a second polymer material and a number of carbon nanotubes (CNTs) imbedded therein. A method for manufacturing the polymer composite p-n junction and a polymer composite diode incorporating the polymer composite p-n junction are also provided.

Abstract: In an organic electronic circuit, particularly a memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via the first and the second electrode. At least one of these electrodes comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold.

Abstract: The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

Abstract: The invention includes a two terminal switching device having two stable resistivity values for each applied voltage, which when a voltage of not more than a first threshold voltage (Vth1) is applied, becomes in a first state having a higher resistivity, whereas when a larger second threshold voltage (Vth2) or more is applied, becomes in a second state having a lower resistivity; a resistance connected in series to the switching device; a terminal for applying a bias voltage (Vt) to both ends of a series circuit of the switching device and the resistance; a first pulse inputting terminal; and a second pulse inputting terminal. The invention provides a simple realization of a flip-flop circuit for a sequential logic circuit.

Abstract: An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.

Abstract: Disclosed herein is an electronic device of a three-terminal type including, a control electrode, first and second electrodes, and an active layer provided between the first and second electrodes so as to face the control electrode with an insulating layer interposed therebetween, the active layer being formed from an aggregate of a composite material formed from inorganic semiconductor fine particles covered with a protective layer, the protective layer including an alkyl chain having, at one end thereof, a functional group bonded to an inorganic semiconductor fine particle and further having an organic semiconductor molecule bonded to the other end thereof.

Abstract: Improving memory retention properties of a polymer memory cell are disclosed. The methods include providing a semiconducting polymer layer containing at least one organic semiconductor and at least one of a carrier ion oxidation preventer and an electrode oxidation preventer. The oxidation preventers may contain at least one of 1) an oxygen scavenger, 2) a polymer with oxidizable side-chain groups which can be preferentially oxidized over the carrier ions/electrodes, and 3) an oxidizable molecule that can be preferentially oxidized over the carrier ions/electrodes.

Abstract: It is an object to provide a flexible semiconductor device bearing a memory device with a highly reliable storage function, where the memory device comprises a layer containing an organic compound. Specifically, the memory device has a memory element which comprises a layer including an organic compound between a pair of electrodes and a sealing layer formed over the memory element, and a moisture absorbing material is contained in the sealing layer. As the moisture absorbing material, a particle of molten silica, crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, zeolite, an oxide of an alkaline earth metal, sulfate or a high water-absorbing polymer can be used.

Abstract: A memory device capable of data writing at a time other than during manufacturing is provided by using a memory element including an organic material. In a memory cell, a third conductive film, an organic compound, and a fourth conductive film are stacked over a semiconductor film provided with an n-type impurity region and a p-type impurity region, and a pn-junction diode is serially connected to the memory element. A logic circuit for controlling the memory cell includes a thin film transistor. The memory cell and the logic circuit are manufactured over one substrate at the same time. The n-type impurity region and the p-type impurity region of the memory cell are manufactured at the same time as the impurity region of the thin film transistor.

Abstract: An OLED includes a wide gap inert host material doped with two dopants. One of the dopants is an emissive phosphorescent material that can transport either electrons or holes. The other dopant is a charge carrying material that can transport whichever of the electrons and holes that is not transported by the phosphorescent dopant. The materials are selected so that the lowest triplet energy level of the host material and the lowest triplet energy level of the charge carrying dopant material are each at a higher energy level than the lowest triplet state energy level of the phosphorescent dopant material. The device is capable, in particular, of efficiently emitting light in the blue region of the visible spectrum.