Abstract: Ceramic assembly can comprise a ceramic article comprising a thickness defined between a first major surface and a second major surface. The thickness can be about 100 micrometers or less. The ceramic assembly can comprise a polymer coating deposited over at least an outer peripheral portion of the first major surface of the ceramic article. The polymer coating can comprise a thickness of about 30 micrometers or less. An edge strength of the ceramic assembly can be greater than an edge strength of the ceramic article by about 50 MegaPascals or more. Methods of forming a ceramic assembly can comprise depositing a polymer coating on an outer peripheral portion of a first major surface of a ceramic article. Methods can further comprise curing the polymer coating.

Abstract: A method for producing an ingot includes loading a raw material comprising a raw material powder having a D50 of 80 ?m or more into a reactor (loading step), controlling the internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material (necking step), and sublimating components of the raw material from the necked raw material to grow an ingot (ingot growth step).

Abstract: The present invention relates to a method for preparing a fully ceramic capsulated nuclear fuel material containing three-layer-structured isotropic nuclear fuel particles coated with a ceramic having a composition which has a higher shrinkage than a matrix in order to prevent cracking of ceramic nuclear fuel, wherein the three-layer-structured nuclear fuel particles before coating is included in the range of between 5 and 40 fractions by volume based on after sintering.

Abstract: A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps.

Abstract: When a molded fabric body (X) is impregnated with a powder (K) of a predetermined material, there are performed a first step of dispersing the powder (K) in a liquid to prepare a slurry, and a second step of burying the molded fabric body (X) made of fiber bundles in the slurry and vibrating the slurry by use of a predetermined vibrator (M). Furthermore, in the second step, the vibrator (M) is moved along a surface of the molded fabric body (X). As a result, it is possible to improve the rate of impregnation of the powder (K) more than that in the conventional cases, irrespective of the shape of the molded fabric body (X).

Abstract: A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 ?m or more and 700 ?m or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 ?m or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.

Abstract: A thermistor material for a short range of low temperature use includes a matrix material composed of nitride-based and/or oxide-based insulating ceramics, conductive particles composed of ?-SiC and dispersed in the grain boundary of each crystal grain of the matrix material so as to form an electric conduction path. The thermistor material further contains boron and second conductive particles added thereto, which are composed of a metal or an inorganic compound, having a specific electric resistance value at room temperature lower than that of the ?-SiC and a melting point of 1700° C. or more. Such a thermistor material is produced by mixing matrix powder, conductive powder, second conductive powder, boron powder, and a sintering agent as necessary such that a temperature coefficient of resistance (B value) and a specific electric resistance value at room temperature are each within a predetermined range, and molding and sintering the resultant mixture.

Abstract: A method of fabricating silicon carbide powder according to the first embodiment includes preparing a silicon carbide molded member by molding a silicon carbide material; preparing a silicon carbide agglomerate member by pulverizing the silicon carbide molded member; and preparing the silicon carbide powder by heat-treating the silicon carbide agglomerate member. A method of fabricating silicon carbide powder according to the second embodiment includes preparing a primary material having a first grain size and including silicon carbide; preparing a secondary material having a second grain size by agglomerating the primary material; and preparing the silicon carbide powder by heat-treating the secondary material.

Abstract: Provided is a process for producing dense SiC fiber-bonded ceramics excellent in heat resistance and having a shape hard to form by hot pressing such as an elongated shape. The process for producing SiC fiber-bonded ceramics composed of: inorganic fiber made of SiC; and interfacial layers mainly made of carbon includes vacuum-sealing a preform, prepared by forming specific silicon carbide-based inorganic fiber into a certain shape, into a capsule and hot-isostatic-pressing the preform. The process is characterized in that the ratio of the number of carbon atoms to the number of silicon atoms in the preform is 1.02 to 1.20, and before the hot isostatic pressing, the preform is heated in an inert gas atmosphere or a reducing gas atmosphere at a temperature of 1200° C. to 1800° C. to adjust the oxygen content in the inorganic fiber to 6.0% by weight or lower, and then the hot isostatic pressing is carried out.

Abstract: Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties tier each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate.

Abstract: Method for treatment of workpieces of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the following steps: preheating of porous carbon workpieces under an inert gas to a selected operating temperature TB1, delivery of liquid silicon to the porous carbon workpieces at an operating pressure pB2 and an operating temperature TB2 and impregnation of the porous carbon workpieces with liquid silicon, reaction of the liquid silicon in the workpiece at a temperature TB3 with formation of silicon carbide from carbon and silicon, gassing of the workpieces with inert gas, and cooling from the operating temperature TB3 to a conditioning temperature Tk, cooling of workpieces to room temperature, in step c the delivery of silicon and transport of the workpieces taking place over preferably cylindrical rolls which are porous at least in the exterior region and which are pivoted, and their speed of rotation determining the residence time for the delivery of silicon in step c, and t

Abstract: The invention relates to a process for preparation of a part comprising silicon carbide with an average nanometric grain size and a relative density of more than 97%, said process comprising: a preform formation step by cold compaction of a nanometric silicon carbide powder or the formation of agglomerates of such a powder by granulation of the powder; a spark plasma sintering step of said preform or said agglomerates, without the addition of sintering, at at least one predetermined temperature and pressure so as to obtain the required relative density and average grain size, namely a relative density of more than 97% and a nanometric average grain size.

Abstract: Composite bodies made by a silicon metal infiltration process that feature a silicon intermetallic, e.g., a metal silicide. Not only does this give the composite material engineer greater flexibility in designing or tailoring the physical properties of the resulting composite material, but the infiltrant also can be engineered compositionally to have much diminished amounts of expansion upon solidification, thereby enhancing net-shape-making capabilities. These and other consequences of engineering the metal component of composite bodies made by silicon infiltration permit the fabrication of large structures of complex shape.

Abstract: A ceramic composite material is comprised of a fabric of fibers of an inorganic substance; and a matrix for combining the fibers. The matrix consists essentially of a ceramic. The matrix is formed by burying the fabric in a mixture of a powder of carbon, a powder of silicon and a medium including an organic solvent, producing an oscillation in the mixture to impregnate the fabric with the mixture, and calcining the fabric impregnated with the mixture.

Abstract: Provided is a novel method for producing a silicon carbide-carbon composite. A green body containing a carbonaceous material 2 having silicon nitride attached to a surface thereof is fired to obtain a silicon carbide-carbon composite 1.

Abstract: Ceramic materials with a matrix which contains at least one carbide, at least one carbide-forming element and carbon, and which furthermore contain a dispersed phase of carbon particles with spherical shape and an average diameter of 0.2 ?m to 800 ?m, a process for their production and their use for thermal insulation, as a protective layer in ceramic armoring against mechanical action, or as a friction layer in brake disks or clutch disks.

Abstract: A method of making a cutting tool insert, including positioning and fixing an abrasive tip in a mold, filling the mold with a powder metal mixture, and infiltrating the powder metal mixture around at least a portion of the tip to define a green body. The method further includes compacting the powder metal to define a pressed green body, sintering the pressed green body to yield a sintered body having a metallic portion and a tip portion, and cooling the sintered body to put the tip portion into compression. The tip portion is non-adhesively mechanically attached to the metallic portion.

Abstract: A method of forming a ceramic body including forming a mixture made of at least a first powder material (PM1) including carbon having a first average particle size (PS1), a second powder material (PM2) including carbon and different than the first powder material, the second powder material having a second average particle size (PS2) less than the first average particle size (PS1), and an aluminum content (AC2) greater than the aluminum content (AC1) of the first powder material, and further including forming a green body from the mixture, and sintering the green body and forming a ceramic body having a first type of grain having an average grain size of not greater than about 8 times the first average particle size (PS1).

Abstract: Provided are: a readily sinterable silicon carbide powder substantially having a stoichiometric composition and from which a dense sintered body can be obtained; a silicon carbide ceramic sintered body having a low specific resistance; and a production method thereof. This readily sinterable silicon carbide powder has a carbon/silicon elemental ratio of 0.96 to 1.04, an average particle diameter of 1.0 to 100 ?m, and a ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an absorption intensity in a chemical shift range of 0 to 170 ppm, in a 13C-NMR spectrum. By sintering this silicon carbide powder under pressure, there can be produced a dense sintered body having a low specific resistance and a high purity.

Abstract: A method for manufacturing a crucible for the crystallization of silicium comprising the steps of •preparing a slurry of solids and liquids, said solids consisting of •silicon metal powder •up to 25% (w/w) SiC powder •up to 10% (w/w) SiN •up to 0.5% (w/w) of a catalyst •up to 1% (w/w) of a binder •forming the slurry into a green body of a crucible •heating the green body in a nitrogen atmosphere, optionally comprising inert gas, to react the silicon at least partially to silicon nitride.

Abstract: Silicon carbide matrix composite material (1) comprises silicon carbide matrix (2) as a host The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 ?m average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 ?m average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 mass % based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).

Abstract: A method for manufacturing a silicon carbide (SiC) sintered material according to the embodiment includes the steps of forming a mixture by mixing SiC powder with a resin and a ball; drying the mixture; and loading the dried mixture in a mold to sinter the dried mixture. The ball includes at least one of a Teflon ball, an SiC ball, a silicon nitride ball, an alumina ball, and a zirconia ball.

Abstract: Provided is a method for producing a silicon carbide ceramic easily and simply producing a silicon carbide ceramic having a small amount in resistivity change due to temperature change and being capable of generating heat by current application; and having a forming raw material preparing step of mixing two or more kinds of silicon carbide ceramic powders containing 4H—SiC silicon carbide crystals at respectively different content ratio to prepare a forming raw material; a forming step of forming the forming raw material into a formed body; and a firing step of firing the formed body to produce a silicon carbide ceramic being adjusted at a content ratio of 4H—SiC silicon carbide crystal to a desired value.

Abstract: A joint prosthesis comprises a first component having a bearing surface and a second component having a bearing surface arranged to articulate with the bearing surface of the first component, said bearing surfaces of the first and the second component thus forming a bearing couple. The bearing surfaces consist of a silicon carbide whisker reinforced alumina. Thus, a bearing couple with low wear, low friction and high hardness is provided.

Abstract: A pipe choke for use in drilling and mining operations comprising a body including a first end and a second end configured to couple to a pipe, an opening extending through the body from the first end to the second end, and wherein the body includes a first phase comprising recrystallized silicon carbide and a second phase comprising silicon.

Abstract: Process for producing bodies from ceramic materials using silicon carbide, comprising the steps: configuration of fiber-reinforced porous bodies (1, 5) that consist of carbon on a base (2) that is inert relative to liquid silicon, the bodies having cavities (3) that are accessible from the exterior or surface recesses (3?), and the cavities (3) being closed at the bottom in the porous bodies or the surface recesses (3?) together with the base (2) forming a reservoir that is sealed at the bottom; heating the configuration by introduction of energy to melt the silicon (6) that is present in the reservoir; and infiltrating the melted silicon in the bodies (1, 5) and reaction of the silicon with the carbon to form silicon carbide; and use of the thus produced bodies as brake disks and as clutch driving disks.

Abstract: The present invention relates to extrudable ceramic masses and other masses which set as a result of baking or sintering, which masses comprise specific additives based on water-soluble cellulose ethers, an extrusion process, the extrudates and their use.

Abstract: A catalyst with large surface area structure, in particular for steam-reforming catalysts, which is characterized in that the large surface area structure is formed of a large number of round or parallel penetrating holes of polygonal cross-section, wherein the catalyst carrier is prepared in the injection molding process, coated with a washcoat and then impregnated with the active component. The catalyst carrier includes at least one sinterable material and has a lateral pressure resistance of at least 700 N. Also, a process for the preparation of such catalysts and the use thereof in a reactor.

Abstract: Embodiments of the present invention disclosed herein include a sintering aid composition that has a material useful for sintering, an amine, and optionally a carboxylic acid.

Abstract: A method for producing a ceramic material product. A filler material is provided. The filler material is divided into filler granules collectively having a median diameter approximately 10 microns or less. An amount of carbon is provided. The carbon is divided into carbon particles and the carbon particles are allowed to coat the filler granules. The mixture of carbon-coated filler granules is formed into a selected shape. The formed mixture is placed in a substantial vacuum. The mixture is introduced to a pre-selected amount of silicon and the mixture of carbon-coated filler granules and silicon is heated to a temperature at or above the melting point of the silicon.

Abstract: A silicon carbide powder composition comprising a silicon carbide powder obtained by thermally decomposing a silicone cured product within a non-oxidizing atmosphere and an organic binder. The composition can be sintered to form a silicon carbide molded product having a complex shape even without the inclusion of a sintering assistant.

Abstract: The present invention provides a Ti3SiC2 based material that exhibits excellent arc resistance, an electrode, a spark plug, and methods of manufacturing the same. A Ti3SiC2 based material according to the present invention includes Ti3SiC2 as a main phase, the Ti3SiC2 based material having a TiC content of 0.5 mass % or less and an open porosity of 0.5% or less. It may be preferable that 0 to 30 mol % of Si contained in the main phase Ti3SiC2 be substituted with Al. A spark plug according to the present invention includes an electrode formed using the Ti3SiC2 based material.

Abstract: Process for producing bodies from ceramic materials using silicon carbide, comprising the steps: configuration of fiber-reinforced porous bodies (1, 5) that consist of carbon on a base (2) that is inert relative to liquid silicon, the bodies having cavities (3) that are accessible from the exterior or surface recesses (3?), and the cavities (3) being closed at the bottom in the porous bodies or the surface recesses (3?) together with the base (2) forming a reservoir that is sealed at the bottom; heating the configuration by introduction of energy to melt the silicon (6) that is present in the reservoir; and infiltrating the melted silicon in the bodies (1, 5) and reaction of the silicon with the carbon to form silicon carbide; and use of the thus produced bodies as brake disks and as clutch driving disks.

Abstract: A silicon carbide-based porous material is provided, including silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal. The silicon carbide-based porous material is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, has a very low risk of fluid leakage causing defects such as cuts and the like, as well as a low pressure loss.

Abstract: Embodiments relate to superabrasive compacts including a diamond-silicon carbide composite table, and methods of fabricating such superabrasive compacts. In an embodiment, a method of fabricating a superabrasive compact is disclosed. An assembly comprising a mixture including diamond particles and silicon is formed. The silicon comprises amorphous silicon, crystalline silicon crystallized from amorphous silicon formed by a milling process, or combinations thereof. A substrate is positioned in proximity to the mixture. The assembly is subjected to a high-pressure/high-temperature process to form a superabrasive compact comprising a superabrasive table bonded to the substrate. The superabrasive table comprises diamond-silicon carbide composite including diamond grains dispersed through a matrix of silicon carbide grains.

Abstract: The invention relates to a method for production of an object with an at least partly silicon carbide structure from a blank of a carbon-containing material, wherein, in a first step, the object made from the carbon-containing material is produced essentially in the desired end form and/or end size, the object made from the carbon-containing material is then at least partly enveloped in a carbon-rich silicon dioxide granulate and then fired at least once in the envelope in a protective gas atmosphere such that the silicon dioxide granulate gives off gas containing silicon carbide which diffuses into the object and the carbon-containing material is completely or partly converted into silicon carbide.

Abstract: The present invention relates to a novel electrical devices fabricated from polycrystalline silicon carbide (SiC) and methods for forming the same. The present invention provides a method for fabricating polycrystalline silicon carbide (SiC) products infiltrated with SiC-containing preceramic precursor resins to substantially mask the deleterious effects of trace contaminants, typically nitrogen and aluminum, while reducing operative porosity and enhancing manufacturing ease.

Abstract: Current top performing SAPI systems are B4C-containing (hot pressed B4C or reaction bonded B4C). These systems will not function well versus future WC/Co threats due to the inability of B4C to withstand high pressure impacts. New approaches will be needed for next generation SAPI ceramics. Three related concepts are disclosed herein, each of which will lead to improved reaction bonded ceramics for next generation SAPI applications. The first concept aims to reactively heat treat reaction bonded B4C, causing. SiC and SiB6 to form at the expense of B4C. The second approach will add Ti to the system, thus allowing TiC and TiB2 to form at the expense of B4C. Finally, the third concept will evaluate the use of finer particle sizes, thus improving the static properties of the ceramics (with the aim of enhancing multi-hit performance). In all cases, preliminary work has been conducted to demonstrate the viability of the concepts. This will lead to a new family of advanced armor ceramics.

Abstract: Cemented carbide compositions consisting essentially of tungsten carbide particles and a cobalt-silicon alloy binder are disclosed. Also disclosed are methods of making the cemented carbide compositions and articles which incorporate the cemented carbide compositions. Pellets having the cemented carbide compositions may be used in the uncrushed or crushed form. The cemented carbide compositions may also be used as metal cutting tool inserts, road construction tool inserts, oil or gas drill inserts, mining tool inserts, and as substrates for ultrahard materials, such as PCD, PCBN, and TSP.

Abstract: The present invention relates to a structure, for filtering particulate-laden gases, of the honeycomb type and containing an assembly of adjacent ducts or channels, whose axes are parallel to one another, separated by porous walls, the ducts being sealed off by plugs at one or other of their ends so as to form inlet chambers opening onto a gas entry face and outlet chambers opening onto a gas exit face, in such a way that the gas to be filtered passes through the porous walls, wherein said walls comprise material based on silicon carbide and the walls have an open porosity of between 30 and 53%; a median pore diameter of between 9 and 20 ?m; the average number of open pores on the surface of the walls, the opening area of which is between 20 and 310 ?m2, is greater than 300 per mm2 of wall; and the ratio of the total opening area of said open pores to said area of the walls is between 0.15 and 0.30.

Abstract: A sintered material based on silicon carbide (SiC) reactively sintered between 1,100° C. and 1,700° C. to form a silicon nitride binder (Si3N4), intended in particular for fabricating an aluminum electrolysis cell, including 0.05% to 1.5% of boron, the Si3N4/SiC weight ratio being in the range 0.05 to 0.45.

Abstract: A sintered refractory block based on silicon carbide (SiC) with a silicon nitride (Si3N4) bond, for the manufacture of a aluminium electrolysis vessel, characterized in that it comprises, expressed in percentage by weight, at least 0.05% boron and/or between 0.05 and 1.2% calcium.

Abstract: Method for introduction of filling materials into porous bodies in which the filling materials in liquid form are brought into contact with the porous bodies and are distributed from at least one site within the porous body in this porous body.

Abstract: Pressureless sintering of silicon carbide with fracture toughness in excess of about 4 MPa-m1/2 as measured by the single-edge precracked beam (SEPB) technique while maintaining a density greater than 3.1 g/cc for compositions with SiC greater than about 94 wt. % is made possible through the use of metallic Al to promote sintering and grain growth. Boron and carbon may be used as traditional sintering aids, with nitrogen to suppress grain growth, and additions of yttrium and/or lanthanide elements to promote intergranular fracture.

Abstract: The invention relates to a process for preparation of a part comprising silicon carbide with an average nanometric grain size and a relative density of more than 97%, said process comprising: a preform formation step by cold compaction of a nanometric silicon carbide powder or the formation of agglomerates of such a powder by granulation of the powder; a spark plasma sintering step of said preform or said agglomerates, without the addition of sintering, at at least one predetermined temperature and pressure so as to obtain the required relative density and average grain size, namely a relative density of more than 97% and a nanometric average grain size.

Abstract: A method of forming a sintered silicon carbide body includes mixing silicon carbide powder having an oxygen content of less than about 3 wt % and having a surface area in a range of between about 8 m2/g and about 15 m2/g, with boron carbide powder and carbon sintering aid to form a green silicon carbide body. Alternatively, a method of producing a sintered silicon carbide body includes mixing the silicon carbide powder with titanium carbide powder having an average particle diameter in a range of between about 5 nm and about 100 nm and with carbon sintering aid to form a green silicon carbide body. In another alternative, a method of forming a sintered silicon carbide body includes mixing silicon carbide powder with boron carbide powder, the titanium carbide powder, and carbon sintering aid to form a green silicon carbide body. After sintering, the silicon carbide bodies have a density at least 98% of the theoretical density of silicon carbide.

Abstract: The invention relates to a process for obtaining a porous material made of recrystallized SiC, especially in the form of a structure for filtering a particulate-laden gas, starting from at least two powders of fine and coarse SiC particles, blended with an organic material comprising an organic pore former and/or a binder, in suitable proportions and in the presence of a sufficient amount of a solvent, such as water, so as to allow forming of said blend and firing thereof between 1600° C. and 2400° C., said process being characterized in that the difference between the percentile d90 of the coarse particle powder and the percentile d10 of the fine particle powder multiplied by the volume of organic material in the initial blend, expressed as a percentage relative to the total volume of the SiC particles, is between 250 and 1500. The invention also relates to the porous material made of recrystallized SiC that can be obtained by said process.

Abstract: A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at least 100 Mpa; c) heating the formed work piece to at least 300° C. for removing possible water and wholly or partially removing additives; d) heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamonds, wherein the amount of graphite created by graphitization is 3-50 wt % of the amount of diamond; e) infiltrating silicon or silicon alloy into the work piece.

Abstract: A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

Abstract: The invention relates to a boron carbide composite material comprising diamond particles and boron carbide, the composite material having a porosity of less than 2 percent by volume. The invention further relates to a method for manufacturing such materials, the method including coating a plurality of diamond particles with boron carbide, combining the plurality of diamond particles to form a green body and subjecting the green body to a temperature in the range from about 1,200 degrees centigrade to about 2,000 degrees centigrade and pressure or vacuum not exceeding about 2,000 Mpa.