Abstract: Each of the first and second shield gap films has a highly insulative film made of aluminum oxide. The highly insulative film has the insulating properties improved by heating. The insulating properties may be improved by heating after deposition or by depositing while heating. This heating allows the highly insulative film to have a reduced pinhole density and an increased dielectric breakdown field. Therefore, the insulating properties can be ensured even if a shield gap length is reduced, and thus it is possible to adapt to an increase in a recording density of a recording medium. The highly insulative film may have the insulating properties improved by exposing the film surface to an oxygen-plasma-containing atmosphere or oxygen-ion-containing atmosphere after deposition.

Abstract: A GMR magnetic sensor is described. The sensor uses one antiferromagnetic layer for stabilizing the pinned layer and another antiferromagnetic layer for providing magnetic bias stabilization of the free layer. Both antiferromagnetic layers are made of the same material and are initialized in the same process step.

Abstract: There is disclosed a method for preparing a magnetic head having a high-speed magnetic recording ability. A resist insulating layer 70 is formed on a coil, a magnetic pole layer 41 is formed on the resist insulating layer 70, and a laminate 10 including the resist insulating layer 70 and the magnetic pole layer 41 is heated so that the resist insulating layer 70 is allowed to shrink.

Abstract: A free layer of an AP pinned spin valve sensor can be properly biased when the pinning layer is metallic and no gap offset is provided by counterbalancing a net demagnetizing field HD and a net sense current field HI by a ferromagnetic coupling field HF and a demagnetizing field from a biasing layer HB. The biasing layer is composed of a high resistance material which is preferably cobalt iron niobium (CoFeNb) or cobalt iron niobium hafnium (CoFeNbHf). A thickness of a copper spacer layer is selected so that the ferromagnetic coupling field HF is either positive or negative, depending upon the direction of the sense current field IS conducted through the sensor and the thicknesses of first and second AP pinned layers of an AP pinned layer structure are selected so that the net demagnetizing field HD supports the net sense current field HI.

Abstract: In a thin-film magnetic head manufacturing method and apparatus, lapping is continued until the MR height of a magnetoresistive sensor falls into a finish tolerance range and the lapping time from the beginning of lapping exceeds a predetermined time, thereby substantially reducing the recession between an ABS of a slider bar and a surface of a thin-film magnetic element opposing a recording medium.

Abstract: A method of manufacturing a thin-film magnetic head with a SVMR element which includes first and second layers of a ferromagnetic material (free and pinned layers) separated by a layer of non-magnetic electrically conductive material, and a layer of anti-ferromagnetic material formed in physical contact with the pinned layer. The method has a first temperature annealing (pin annealing) step of annealing the SVMR element under application of magnetic field to provide exchange coupling between the pinned layer and the anti-ferromagnetic material layer so that the pinned layer is pinned toward a predetermined direction, and a second temperature annealing (free layer annealing) step of annealing the SVMR element so that axis of easy magnetization of the free layer orients a direction substantially perpendicular to the predetermined direction. The free layer annealing is performed at a temperature lower than 150° C.

Abstract: A method for manufacturing a magnetic encoder is disclosed, wherein the magnetic encoder may be used with a sensor on a semiconductor sensor chip that may be placed opposite the magnetic encoder, and is capable of providing codes as represented by a sequence of pulses generated by the magnetic forces. According to the method, an unvulcanized raw rubber is provided, to which a magnetic ferrite powder is added. The resulting mixture composed of the unvulcanized raw rubber and magnetic ferrite powder is then passed through a rolling machine or an extruding machine where the mixture is formed into a sheet blank that contains the magnetic ferrite powder aligned regularly in a particular orientation, or alternatively may be passed through the extruding machine, followed by being passed through the rolling machine, where the mixture is formed into a sheet blank that contains the magnetic ferrite powder aligned regularly in the particular orientation.

Abstract: There is disclosed a manufacturing method of a magnetoresistive element of the present invention, comprising: a step of preparing a substrate having a thermal conductivity in a range of 5 to 150 Wm−1K−1; a substrate cooling step of moving the substrate into a vacuum cooling chamber, and cooling the substrate at an absolute temperature of 200 K or less in the vacuum cooling chamber; and a laminated film forming step of moving the cooled substrate into a vacuum film forming chamber, fixing the substrate to a substrate holder, and forming a magnetoresistive laminated film on the substrate while rotating the substrate, so that the manufacturing method of the magnetoresistive element is little in dispersion of element property, high in reliability, and superior in productivity.

Abstract: The SVMR element has a non-magnetic metallic thin-film layer, first and second ferromagnetic thin-film layers (free and pinned layers) formed to sandwich the non-magnetic metallic thin-film layer and an anti-ferromagnetic thin-film layer formed in contact with a surface of the second ferromagnetic thin-film layer. This surface is opposite to the non-magnetic metallic thin-film layer. The first ferromagnetic thin-film layer has a two-layers structure of a NiFe layer and a CoFe layer. The manufacturing method includes a step of depositing the first ferromagnetic thin-film layer, the non-magnetic metallic thin-film layer, the second ferromagnetic thin-film layer and the anti-ferromagnetic thin-film layer, and a step of annealing, thereafter, the deposited layers so that change in magnetostriction depending upon variation of a thickness of the NiFe layer becomes small.

Abstract: A method is disclosed for magnetizing a magnetic system including a ferromagnetic layer magnetized in a first direction and an anti-ferromagnetic layer provided on said ferromagnetic layer in exchange coupling therewith. The method includes a first thermal annealing process including the sub-steps of annealing the magnetic system in a first annealing state, and applying a magnetic field to the magnetic system in a second direction different from the first direction, while maintaining the magnetic system in the first annealing state. A second thermal annealing process includes the sub-steps of annealing the magnetic system after the first thermal annealing process, to a second annealing state, and applying a magnetic field in a third direction different from the second direction while maintaining the magnetic system in the second annealing state.

Abstract: With negative pressure sliders having step bearings, there are variations in flying height resulting from variations in shape factors, such as the step bearing depth. In order to achieve lower flying height, it is considered necessary to reduce the variation in flying height caused by the variation in curvature of the air bearing surface and the variation in flying height caused by the variation in the shapes of the step bearings. The curvature of the air bearing surface of the slider can be observed in the pre-cut row bar condition or in a unit product condition. Shape data of the magnetic head slider can be input, such as the step bearing depth, etc., so as to calculate the predicted flying height of the slider An arithmetic processing unit calculates an adjusted target curvature from the difference between the predicted flying height and the target flying height.

Abstract: A process for resetting or initially establishing the magnetic orientation of one or more spin valves in a magnetoresistive read head with improved robustness. The spin valve includes subcomponents such as an antiferromagnetic layer, a ferromagnetic pinned layer, a conductive layer, a free layer, and a hard bias layer. A first external magnetic field is first applied to the spin valve sensor, this field having a first orientation relative to the spin valve sensor. During application of the first external magnetic field, a pulse of electrical current is directed through the spin valve sensor in a first direction, preferably parallel to the magnetic orientation of the external field. The current waveform brings the antiferromagnetic layer of the spin valve past its blocking temperature, freeing its magnetic orientation. The first external field exerts a robust bias upon the antiferromagnetic layer in the desired direction.

Abstract: A method is disclosed for fabricating a spin-valve magnetic head including a layered body of a first ferromagnetic layer having a first easy axis of magnetization extending in a first direction, a non-magnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer provided on the non-magnetic layer, and an anti-ferromagnetic layer provided on the second ferromagnetic layer in exchange coupling therewith. The method includes a first thermal annealing process with the steps of annealing the layered body in a first annealing state and applying a magnetic field to the layered body in a second direction different from the first direction, while maintaining the layered body in the first annealing state.

Abstract: A method for manufacturing a GMR bridge detector as well as the bridge detector itself in which magnetoresistive resistors are interconnected in the form of a bridge to detect a magnetic field. The resistors consist of a material that exhibits the giant magnetoresistive ratio (GMR) effect. The magnetoresistive sensitivity of the individual resistors is produced through annealing. The annealing of the resistors takes place through selective feeding of a current that is sufficient for reaching the temperature required for annealing into the bridge connections. Depending on the wiring of the bridge connections, the resistors are provided with the property necessary for the GMR effect either singly or in pairs. As the material for the resistors, in particular, a material of the class of discontinuous multilayer materials, particularly NiFe/Ag, is used in which the GMR property is produced through single annealing at a specific temperature.

Abstract: A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer.

Abstract: A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first high temperature annealing step. Form a non-magnetic layer over the strip and the pinning layer. Then form a second FM strip on the non-magnetic layer, and form a second AFM pinning layer over a portion of the second FM strip, with a second AFM pinning layer being composed identically of the first material. Perform a second high temperature annealing step on the first and second FM strips and the first and second pinning layers and the intermediate non-magnetic layer in the presence of a second magnetic field antiparallel to the first magnetic field. A head with NiFe FM strips and FeMn or MnPt, etc, AFM layers for both strips is provided.

Abstract: A manufacturing method of a thin-film magnetic head with a spin valve effect MR read sensor includes a temperature-annealing step of firmly fixing the direction of the pinned magnetization in the spin valve effect MR sensor. The temperature-annealing step is executed by a plurality of times.

Abstract: In a thin-film magnetic head manufacturing method and apparatus, lapping is continued until the MR height of a magnetoresistive sensor falls into a finish tolerance range and the lapping time from the beginning of lapping exceeds a predetermined time, thereby substantially reducing the recession between an ABS of a slider bar and a surface of a thin-film magnetic element opposing a recording medium.

Abstract: Within a method for forming a magnetoresistive (MR) sensor element there is first provided a substrate. There is then formed over the substrate a first magnetoresistive (MR) layer having formed contacting the first magnetoresistive (MR) layer a magnetically biased first magnetic bias layer biased in a first magnetic bias direction with a first magnetic bias field strength. There is also formed separated from the first magnetoresistive (MR) layer by a spacer layer a second magnetoresistive (MR) layer having formed contacting the second magnetoresistive (MR) layer a magnetically un-biased second magnetic bias layer.

Abstract: A method for forming a magnetoresistive (MR) sensor element, and a magnetoresistive sensor element fabricated in accord with the method. There is first provided a substrate. There is then formed over the substrate a magnetoresistive (MR) layer comprising: (1) a bulk layer of the magnetoresistive (MR) layer formed of a first magnetoresistive (MR) material optimized to provide an enhanced magnetoresistive (MR) resistivity sensitivity of the magnetoresistive (MR) layer; and (2) a surface layer of the magnetoresistive (MR) layer formed of a second magnetoresistive (MR) material optimized to provide an enhanced magnetic exchange bias when forming a magnetic exchange bias layer upon the surface layer of the magnetoresistive (MR) layer. Finally, there is then formed upon the surface layer of the magnetoresistive (MR) layer the magnetic exchange bias layer. The method contemplates an magnetoresistive (MR) sensor element fabricated in accord with the method.

Abstract: A method of making a second pole piece layer that has a yoke portion between a pole tip portion and a back gap portion comprising the steps of forming a first photoresist layer that is sensitive to a first bandwidth of light, forming a second photoresist layer on the first photoresist layer that is sensitive to a second bandwidth of light that is different from the first bandwidth of light, after forming the first and second photoresist layers, photopatterning the second photoresist layer with the second bandwidth of light to provide an opening at pole tip, yoke and back gap sites wherein the pole tip, yoke and back gap sites define perimeters for the pole tip, yoke and back gap portions respectively, after photopatterning the second photoresist layer, photopatterning the first photoresist layer with the first bandwidth of light to provide openings at the pole tip, yoke and back gap sites and then plating the pole tip, yoke and back gap portions of the second pole piece layer in the openings of the first and

Abstract: In accordance with the present invention, the initialization for orienting the magnetized directions of the free layers of GMR heads (mounted on the diagonally shaded surface of sliders 14) by an external magnetic field is again executed also for the opposite direction, thereby to increase the yield of the GMR heads. Further, it is determined whether the magnetized direction of the pinned layer of GMR heads can be once reversed to the opposite direction, thereby to select damaged GMR heads at an early stage. Then, by performing a reset while performing a quasi-static test for seeing the read back response of the GMR head after restoring the magnetized direction of the pinned layer to a positive rotation, a safe and efficient reset is executed. The reset can be executed not only by applying only a pulse, but also while providing an external magnetic field in the pinning direction, or only by giving a high magnetic field.

Abstract: A spin-valve thin-film magnetic element includes a substrate, a composite formed thereon, and electrode layers formed on both sides of the composite. The composite includes an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a mean-free-path-extending layer, and an exchange bias layer. The mean-free-path-extending layer may be a back layer or a mirror reflective layer. The mean-free-path-extending layer extends the mean free path of spin-up conduction electrons in the spin-valve thin-film magnetic element. This spin-valve thin-film magnetic element meets trends toward a narrower track width.

Abstract: A thin-film magnetic head having a spin valve effect multi-layered structure including a non-magnetic electrically conductive material layer, first and second ferromagnetic material layers separated by the non-magnetic electrically conductive material layer, and an anti-ferromagnetic material layer formed adjacent to and in physical contact with one surface of the second ferromagnetic material layer. This one surface is an opposite side from the non-magnetic electrically conductive material layer and the multi-layered structure has ends at its track-width direction. The head also has longitudinal bias means formed at both the track-width ends of the multi-layered structure, for providing a longitudinal magnetic bias to the multi-layered structure.

Abstract: A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state.

Abstract: A magnetic yoke having a magnetic gap provided in the side of the surface facing the medium is disposed on the surface of a substrate. An MR film is disposed on the surface of the magnetic yoke substantially parallel to the substrate with a predetermined separation from the surface S facing the medium. At least both end portions of the MR film are magnetically coupled to the magnetic yoke. A pair of leads for supplying sensing current to the MR film have magnetic lead portions formed from the same magnetic layers as the magnetic yoke. The magnetic lead portions curb deterioration of MR head properties and yield reduction during formation of the leads. Furthermore, a bias magnetic field is applied to the magnetic yoke and the MR film at least during operation of the head. This bias magnetic field is for instance provided by a magnetic field induced by the electric current. Alternatively, a magnetic field induced by the electric current is applied while heat-processing the magnetic yoke.

Abstract: A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions.

Abstract: A spin-valve magnetoresistive element includes a plurality of layers. The magnetic moment of a first pinned magnetic layer is smaller than the magnetic moment of a second pinned magnetic layer. In this case, a magnetic field of 100 to 1,000 Oe is applied in a direction opposite to the direction for which obtaining of magnetization for the first pinned magnetic layer is desired, or a magnetic field of 5 kOe or greater is applied in the same direction as the direction for which obtaining of magnetization for the first pinned magnetic layer is desired. Thus, a first magnetization of the first pinned magnetic layer and the magnetic moment of a second pinned magnetic layer can be maintained in an antiparallel state.