Abstract: An elastic wave device includes a piezoelectric thin film formed from a piezoelectric single crystal substrate by peeling, an inorganic layer formed on a rear surface of the piezoelectric thin film, an elastic layer disposed on a surface of the inorganic layer opposite to the piezoelectric thin film, and a support member adhered to a surface of the elastic layer opposite to the inorganic layer. The elastic layer reduces stress generated when the piezoelectric thin film provided with the inorganic layer and the support member are adhered to each other and has a predetermined elastic modulus. The inorganic layer is formed of a material having a higher elastic modulus than that of the elastic layer and prevents damping generated when the elastic layer is provided.

Abstract: Disclosed herein is an ultrasonic sensor, including: a conductive case having a groove disposed at a bottom surface thereof; a piezoelectric element inserted into the groove and fixed to the groove by a conductive adhesive; a temperature compensation capacitor disposed on a top of the piezoelectric element, electrically connected to the piezoelectric element, and fixed to the case by a non-conductive adhesive; a first lead wire led-in from an outside of the case and electrically connected to one surface of the temperature compensation capacitor and the case; and a second lead wire lead-in from the outside of the case and electrically connected to the other surface of the temperature compensation capacitor, whereby the piezoelectric element which is easily damaged can be protected by the temperature compensation capacitor, without using the separate substrate for fixing the temperature compensation capacitor.

Abstract: A crystal device is provided, in which a peeling of a bonding material is prevented by using the bonding material having a thermal expansion coefficient which is between the coefficients in a first direction and a second direction of a bonding surface of a crystal element. A crystal device includes a rectangular crystal element formed with a crystal material that includes an excitation part and a frame surrounding the excitation part. The device further includes a rectangular base bonded to a principal surface of the frame, and a lid bonded to another principal surface of the frame; and the frame, the base and the lid have edges respectively along a first direction and a second direction intersecting with the first direction. The bonding material is applied having a thermal expansion coefficient that is between the coefficients in the first direction and second direction of the crystal element.

Abstract: Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).

Abstract: The invention relates to an insonification device (100) comprising a plurality of elementary ultrasonic transducers (110) each comprising at least one electro-acoustic element (111) and distributed on a chassis (120, 140) so that the electro-acoustic elements (111) are distributed on a so-called front surface (120?) of the device (100) intended to be placed facing the medium to be insonified. According to the invention, as each transducer (110) comprises a longitudinal body (113) made in a heat conducting material at the so-called front end of which the electro-acoustic element (111) is placed, the chassis (120, 140) comprises a sealed cooling chamber (130) placed behind the front surface (120?), crossed by the bodies of the transducers (113) and intended to be gone through by a coolant fluid flow.

Abstract: A flexural vibration piece includes a flexural vibrator that has a first region on which a compressive stress or a tensile stress acts due to vibration and a second region having a relationship in which a tensile stress acts thereon when a compressive stress acts on the first region and a compressive stress acts thereon when a tensile stress acts on the first region, and performs flexural vibration in a first plane. The flexural vibration piece also includes a heat conduction path, in the vicinity of the first region and the second region, that is formed of a material having a thermal conductivity higher than that of the flexural vibrator and thermally connects between the first region and the second region.

Abstract: A composite substrate 10 includes: a piezoelectric substrate 12 capable of transmitting an elastic wave and composed of lithium tantalate (LT); a silicon support substrate 14 that is bonded to the rear surface of the piezoelectric substrate in the (111) plane; and an adhesive layer 16 bonding the substrates 12 and 14 to each other.

Abstract: A piezoelectric substrate includes vibrating arms, a base portion to which one end portion of each vibrating arm is connected, spindle portions formed in the other end portion of each vibrating arm, formed to have a large width, and having first groove portions formed therein, and second groove portions that are formed along the resonator center line of each vibrating arm, and flexure-torsional combined resonator is excited. A piezoelectric resonator element has flexural resonator of flexure-torsional combined resonator that is excited as its principal resonator and sets the cutting angle of the piezoelectric substrate, the widths and the depths of the first groove portion and the second groove portion, and the thickness of the vibrating arm such that the frequency-temperature characteristics represent third-order characteristics with respect to the temperature.

Abstract: A surface-mount type crystal device is provided, having a rectangular crystal element including an excitation part and a frame surrounding the excitation part, wherein the frame has sides respectively along a first and a second directions intersected with each other; a rectangular base, bonded to a principal plane of the frame, having sides respectively along the first and the second directions; a rectangular lid, bonded to another principal plane of the frame, having sides respectively along the first and the second directions. A first and a second bonding materials, respectively corresponding to a thermal expansion coefficient in the first and the second directions of the crystal element, are respectively applied on the sides of the first and the second directions of each of the frame of a crystal material, the base and the lid. A second bonding material is different from the first bonding material.

Abstract: The present invention in one aspect relates to an acoustic wave resonator having an acoustic reflector, a piezoelectric layer, a composite structure having a first electrode, a temperature compensation layer formed on the first electrode, having one or more vias or trenches formed therein, and a second electrode formed on the temperature compensation layer and electrically connected to the first electrode at least through the one or more vias or trenches, and a third electrode, where the composite structure is disposed under the piezoelectric layer, on the piezoelectric layer, or inside the piezoelectric layer.

Abstract: A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount.

Abstract: A contour resonator is provided with a vibrating body formed from a flat plate in a square shape, excitation electrodes formed on both front and back surfaces of the vibrating body and regulating a resonance frequency, and temperature characteristic adjustment films formed on surfaces of the excitation electrodes and adjusting a temperature characteristic.

Abstract: A bistable electroactive polymer transducer is provided for electrically actuated deformation of rigid electroactive polymer members. The polymers have glass transition temperatures (Tg) above ambient conditions and turn into rubbery elastomers above Tg and have high dielectric breakdown strength in the rubbery state. They can be electrically deformed to various rigid shapes with maximum strain greater than 100% and as high as 400%. The actuation is made bistable by cooling below Tg to preserve the deformation. The dielectric actuation mechanism includes a pair of compliant electrodes in contact with a dielectric elastomer which deforms when a voltage bias is applied between the pair of electrodes. In some of the configurations, the dielectric elastomer is also a shape memory polymer. The deformations of such bistable electroactive polymers can be repeated rapidly for numerous cycles.

Abstract: One embodiment of the present invention sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with oxide. By growing oxide within the slots, the amount of oxide growth on the outside surfaces of the MEMS resonator may be reduced. Furthermore, by situating the slots in the areas of large flexural stresses, the contribution of the embedded oxide to the overall TCF of the MEMS resonator is increased, and the total amount of oxide needed to decrease the overall TCF of the MEMS resonator to a particular target value is reduced. As a result, the TCF of the MEMS resonator may be reduced in a manner that is more effective relative to prior art approaches.

Abstract: A flexural vibration piece includes a flexural vibrator that has a first region on which a compressive stress or a tensile stress acts due to vibration and a second region having a relationship in which a tensile stress acts thereon when a compressive stress acts on the first region and a compressive stress acts thereon when a tensile stress acts on the first region, and performs flexural vibration in a first plane. The flexural vibration piece also includes a heat conduction path, in the vicinity of the first region and the second region, that is formed of a material having a thermal conductivity higher than that of the flexural vibrator and thermally connects between the first region and the second region.

Abstract: An illustrative embodiment of a temperature-activated voltage generator includes a generator housing having a housing interior; a flexible, temperature-sensitive bimetallic element disposed in the housing interior; and a piezoelectric element carried by the generator housing. The bimetallic element is positional between a first position wherein the bimetallic element disengages the piezoelectric element and a second position wherein the bimetallic element engages the piezoelectric element. Electrical voltage output leads are electrically connected to the piezoelectric element. A voltage-generating method is also disclosed.

Abstract: The invention relates to piezoelectric sensor arrangements, especially sensor arrangements that can be operated in a measuring fluid, in order to be able to detect, for example, elastic properties of the measuring fluid itself or the presence and/or concentration of analyte molecules in the fluid. According to the invention, the sensor arrangement comprises an acoustic resonator which has a sensitive region and is arranged such that a resonance frequency of the sensor arrangement varies according to properties of the measuring fluid. The acoustic resonator is formed by a piezoelectric thin layer resonator and the sensitive region is produced by means of epitaxy, such that transversally polarized vibration modes can be induced.

Abstract: A method for manufacturing an elastic wave device includes forming a lower resist layer on the piezoelectric substrate; forming an upper resist layer on the lower resist layer; patterning the upper and lower resist layers with a developer with respect to which a solubility of the lower resist layer is higher than that of the upper resist layer to form a lower resist pattern and an upper resist pattern on the lower resist pattern so that a periphery of the lower resist pattern lies within a periphery of the upper resist pattern; depositing an electrode material over an entire surface of the piezoelectric substrate that has the upper resist pattern and the lower resist pattern formed thereon; and removing the upper resist pattern and the lower resist pattern to pattern the electrode material, thereby forming a comb-shaped electrode by lift-off.

Abstract: A temperature compensated crystal oscillator includes an oscillation circuit including a crystal oscillator; a variable capacitor inserted in series in the oscillation circuit; a thermosensitive circuit element whose resistance value changes in accordance with a temperature of the crystal oscillator, the thermosensitive circuit element being formed on the crystal oscillator by vapor deposition; and a correction circuit configured to correct capacitance of the variable capacitor based on a current value that is used when applying current to the thermosensitive circuit element.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Abstract: A vibrating element includes: a vibrating body having frequency temperature dependency; and a temperature characteristic correcting part provided on a surface of the vibrating body. The temperature characteristic correcting part has a temperature characteristic of at least one of a Young's modulus and a thermal expansion coefficient and is expressed by a temperature characteristic curve which has at least one of an inflection point and an extremal value. In the vibrating element, a temperature of at least one of the inflection point and the extremal value is within an operating temperature range of the vibrating body.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Abstract: A multi-layer piezoelectric element having high durability which allows it to increase the amount of displacement of a piezoelectric actuator under high voltage and high pressure and does not undergo a change in the amount of displacement during continuous operation in a high electric field and under a high pressure over a long time period is provided. The multi-layer piezoelectric element comprises a stack of at least one piezoelectric layer and a plurality of internal electrodes consisting of first and second internal electrodes placed one on another, a first external electrode formed on a first side face of the stack and connected to the first internal electrode and a second external electrode formed on a second side face of the stack and connected to the second internal electrode, wherein the bonding strength between the piezoelectric layer and the internal electrode is weaker than the bending strength of the piezoelectric layer.

Abstract: A surface acoustic wave device has a supporting substrate, a propagation substrate made of a piezoelectric single crystal, an organic adhesive layer having a thickness of 0.1 to 1.0 ?m and bonding the supporting substrate and the propagation substrate, and a surface acoustic wave filter provided on the propagation substrate.

Abstract: A component has a substrate and a compensation layer. A lower face of the substrate is mechanically firmly connected to the compensation layer. The lower face of the substrate and the upper face of the compensation layer have a topography.

Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.

Abstract: The invention relates to a temperature-compensated resonator including a body used in deformation, wherein the core (58, 58?, 18) of the body (3, 5, 7, 15, 23, 25, 27, 33, 35, 37, 43, 45, 47) is formed from a plate formed at a cut angle (??) in a quartz crystal determining the first and second orders temperature coefficients (?, ?, ??, ??). According to the invention, the body (3, 5, 7, 15, 23, 25, 27, 33, 35, 37, 43, 45, 47) includes a coating (52, 54, 56, 52?, 54?, 56?, 16) deposited at least partially on the core (58, 58?, 18) and having first and second orders Young's modulus variations (CTE1, CTE2, CTE1?, CTE2?) according to temperature of opposite signs respectively to said first and second orders temperature coefficients (?, ?, ??, ??) of said resonator so as to render the latter substantially zero. The invention concerns the field of time and frequency bases.

Abstract: A highly reliable surface acoustic wave device includes wiring lines that do not easily rupture at a three-dimensional wiring portion. The surface acoustic wave device includes a plurality of surface acoustic wave elements located on a piezoelectric substrate, a supporting member arranged on the piezoelectric substrate so as to enclose vibrating portions including electrodes such as IDT electrodes, and a cover member stacked so as to cover openings of the supporting member and to define hollow spaces facing vibrating electrodes. Furthermore, a three-dimensional wiring portion at which a first wiring line and a second wiring line are stacked with an insulating layer interposed therebetween is provided on the piezoelectric substrate. The three-dimensional wiring portion is enclosed by the supporting member, and thereby disposed inside a space enclosed by the piezoelectric substrate, the supporting member, and the cover member.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Abstract: An integrated circuit module with temperature compensation crystal oscillator (TCXO) applying to an electronic device comprises: one substrate having one top surface; one temperature compensation crystal oscillator (TCXO) disposed on the top surface; at least one chip disposed on the top surface; one encapsulating piece formed on the top surface for covering the TCXO and the chip. As above-described structure, TCXO is prevented from exchanging heat due to the temperature difference so that the stability of the TCXO is improved.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating environmental changes.

Abstract: An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

Abstract: The crystal oscillator device includes an air-tight case (1) forming a vacuum chamber (23), a piezoelectric resonator element (11), oscillation circuitry, a temperature sensor, and a heating unit implemented in an integrated-circuit (IC) chip (13) with an active surface (13a). The piezoelectric resonator element (11) and the oscillation circuitry are connected together to form an oscillation circuit. Furthermore, the temperature sensor and the heating unit are enclosed in the vacuum chamber (23) with the piezoelectric resonator element (11). The piezoelectric resonator element is attached in a heat conductive manner to the active surface (13a) of the integrated-circuit chip (13) in such a way that the IC chip provides mechanical support for the piezoelectric resonator element.

Abstract: A surface acoustic wave device includes a piezoelectric substrate; comb electrodes provided on a first surface of the piezoelectric substrate; and an insulating film provided on at least one of the first surface of the piezoelectric substrate and a second surface thereof opposite to the first surface, the insulating film having a thickness greater than that of the piezoelectric substrate and having a linear expansion coefficient smaller than that of the piezoelectric substrate in a direction of propagation of a surface acoustic wave.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature. The piezoelectric thin film has a thickness of 0.2 ?m to 10 ?m. The piezoelectric thin film is oriented in one of plane orientations (001), (110), and (111).

Abstract: The invention relates to a method and a device for cooling ultrasonic transducers. The inventive device is characterised in that it consists of at least one piezo stack (4) and at least two cylindrical transducer bodies (5), which together with the piezo stack (4) form an ?/2 oscillator. In multiple transducer assemblies, two respective transducer bodies (5) can be combined to form a common transducer body (6) and the transducer bodies (5, 6) comprise flow channels (7), through which pressurised coolant can flow. The inventive method for cooling ultrasonic transducers is characterised in that the body of the ultrasonic transducer is traversed and/or surrounded by a pressurised coolant. This enables the heat that is generated in the transducers to be directly dissipated by convection. In addition the inventive elements enable the creation of a large common contact surface between the transducers and the coolant.

Abstract: The invention provides a surface acoustic wave element having improved heat dissipation and power durability. These characteristics are achieved by configuring the SAW such that either of an input or ground electrode is disposed between serial arm portions of the SAW comprising resonators.

Abstract: The piezoelectric actuator comprises: a supporting substrate; a thermal stress controlling layer which is formed on the supporting substrate; and a piezoelectric body which is formed as a film onto the thermal stress controlling layer on the supporting substrate at a higher temperature than room temperature, wherein the thermal stress controlling layer reduces a film stress induced by formation of the piezoelectric body.

Abstract: The present invention provides a fuel injector, comprising a housing having a sealable injector seat; a fuel injector pin disposed within the housing proximate) the injector seat such that the injector seat may be sealed and unsealed by displacing the fuel injector pin; a resilient element biasing the fuel injector pin in an unsealed direction; a piezoelectric actuator disposed within the housing proximal to the fuel injector pin configured to actuate to force the injector pin towards the injector seat to seal the injector seat; and a thermal compensating unit disposed within the housing proximal to the actuator and configured to compensate for thermal expansion or contraction of a component of the fuel injector.

Abstract: A device includes at least one piezoacoustic resonator element (21-29) having at least one piezoelectric layer (21a-29a) and two electrodes (21b-29b, 21c-29c) applied to the piezoelectric layer (21a-29a). The piezoacoustic resonator element (21-29) is configured in such a manner that, when a voltage is applied to the piezoelectric layer (21a-29a) by electrodes (21b-29b, 21c-29c), a bulk wave of the piezoelectric layer (21a-29a) is induced with a resonant frequency. The device also includes a heating device with a heating element (211-219), integrated into the piezoacoustic resonator element (21-29), for controlling the working temperature of the device.

Abstract: A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.

Abstract: A MEMS structure having a stress-inducer temperature-compensated resonator member is described. The MEMS structure includes a frame disposed above a substrate. The frame has an inner surface and an outer surface and is composed of a first material having a first coefficient of thermal expansion (CTE) and a second material having a second CTE, different from the first CTE. A resonator member is coupled to the inner surface of the frame.

Abstract: A boundary acoustic wave element includes an IDT electrode arranged at the interface between a piezoelectric substance and a dielectric layer, a heat dissipation film is arranged on the outer side surface of the dielectric layer or on the outer side surface of a sound-absorbing film laminated on the outer side of the dielectric layer, the heat dissipation film is arranged to have a portion that overlaps the IDT electrode in plan view, and the heat dissipation film is connected to a bump provided on the outer side surface of the sound-absorbing film, and is connected to a via-hole conductor that extends through the sound-absorbing film. The boundary acoustic wave element and a boundary acoustic wave device are excellent in a heat dissipation property and hence can provide enhanced electric power resistance, without causing an increase in chip size and an increase in the area of the mounting space.

Abstract: A piezoelectric resonator includes a substrate and a thin-film section. The thin-film section includes a first thin-film section supported by the substrate, and an acoustically-isolated second thin-film section which is separated from the substrate. In the second thin-film section, first and second electrodes are arranged on the respective main surfaces of a piezoelectric film, and a vibration section is provided at an area where the first and the second electrodes overlap each other on the second thin-film section when viewed through in the film-thickness direction. The thin-film section further includes a heat-radiating film which is in contact with peripheral edges of at least the first electrode among the first and second electrodes defining portions of a periphery of the vibration section, and which extends from the peripheral edges to the first thin-film section when viewed through in the film-thickness direction.

Abstract: A surface acoustic wave device has a supporting substrates, a propagation substrate A made of a piezoelectric single crystal, an organic adhesive layer having a thickness of 0.1 to 1.0 ?m and bonding the supporting substrate and the propagation substrate, and a surface acoustic wave filter or resonator provided on the propagation substrate. The temperature coefficient of frequency of the surface acoustic wave device can be thereby reduced.

Abstract: A system and method for removing unwanted heat generated by a piezoelectric element of an ultrasound transducer. Some implementations have high thermal conductivity (HTC) material placed adjacent to the piezoelectric element. The HTC material can be thermally coupled to one or more heat sinks. Use of HTC material in conjunction with these piezoelectric element surfaces is managed to avoid degradation of propagating acoustic energy. Use of the HTC material in conjunction with heat sinks allows for creation of thermal paths away from the piezoelectric element. Active cooling of the heat sinks with water or air can further draw heat from the piezoelectric element. Further implementations form a composite matrix of thermally conductive material or interleave thermally conductive layers with piezoelectric material.

Abstract: A drive unit includes a vibration actuator for controlling the piezoelectric element. A control section controls the vibration actuator switchably between a normal operation mode in which the piezoelectric element vibrates at a predetermined frequency to let the vibration actuator output a driving force, and a heating mode in which the piezoelectric element vibrates in a direction perpendicular to a direction of the driving force at a frequency different from the frequency in the normal operation mode to heat the piezoelectric element.

Abstract: An acoustic transducer is disclosed that is capable of converting mechanical motion into acoustical energy may include a diaphragm and a support on one portion of the diaphragm. An actuator may then be provided that is operatively coupled to a second portion of the diaphragm. The support and actuator may be configured to be environmentally responsive to surrounding conditions of, e.g., heat and/or humidity which may then substantially maintain the diaphragm's acoustic performance.

Abstract: A piezoelectric device has a piezoelectric vibration element mounted in a package wherein the piezoelectric vibration element comprises two stick-like vibration legs; a central leg provided between the two vibration legs; a coupling portion that couples one end of each of the two vibration legs and one end of the central leg; and a protrusion portion that is coupled to another end of the central leg, has a predetermined angle, neither 0 nor 180 degrees, to the length direction of the central leg, and extends into a direction not interfering with the driving legs. In making the piezoelectric device smaller and thinner, this configuration avoids interference between a support point on the central leg, provided for supporting the vibration element, and conductive electrodes, improves insulation between the conductive electrodes, and reduces the generation of short-circuits between the conductive electrodes.

Abstract: The invention describes a vibrating element apparatus, preferably in the form of a tuning fork-type contact level transducer, and a method of forming the same. The tines of the transducer are vibrated by piezoelectric elements, which piezoelectric elements are arranged in a stack along with insulators and conductors to allow cyclic electrical signals to be applied thereto. The stack is provided as a sub-assembly allowing ready replacement in the field and 10 without disturbing the installation of the transducer in the plant which it serves.