Abstract: The present invention provides a flexible piezoelectric composite including a three-dimensional interconnected piezoelectric ceramic framework based on a porous organic template with sufficient stiffness and infiltrated with a flexible polymer matrix. A method for fabricating the flexible piezoelectric composition is also described herein.

Abstract: A liquid discharge head includes a pressure chamber plate having a plurality of pressure chambers arranged in a first direction, a vibrating plate disposed at a position further than the pressure chamber plate in a second direction intersecting the first direction, at least one first electrode disposed at a position further than the vibrating plate in the second direction, a piezoelectric layer disposed at a position further than the first electrode in the second direction, and a second electrode disposed at a position further than the first electrode in the second direction. The piezoelectric layer has a first area that does not overlap the first electrode in the first direction and a second area that overlaps the first electrode in the first direction, and the first area exhibits a first preferred orientation and the second area exhibits the first preferred orientation when the piezoelectric layer is analyzed by X-ray diffraction.

Abstract: There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.

Abstract: A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×101 5?/? or higher.

Abstract: A piezoelectric device includes a membrane portion and a piezoelectric layer made of single crystal of a piezoelectric body. At least a portion of the piezoelectric layer is included in the membrane portion. An electrode is provided on a surface of the piezoelectric layer in the membrane portion. The piezoelectric layer includes a first polarization region in a first polarization state and a second polarization region in a second polarization state, and the first polarization region and the second polarization region are spaced apart from each other in a thickness direction or an in-plane direction.

Abstract: The interface region may include a region in which first intensity is higher than second intensity and in which the first intensity is higher than third intensity, where a degree of orientation of the (?211) crystal face of the second layer is denoted as the first intensity, the degree of orientation of the (?111) crystal face of the second layer is denoted as the second intensity, and the degree of orientation of the (002) crystal face of the second layer is denoted as the third intensity. The surface-layer region may include a region in which the first intensity is higher than the third intensity and in which the second intensity is higher than the third intensity.

Abstract: Provided is a piezoelectric material filler including alkali niobate compound particles having a ratio (K/(Na+K)) of the number of moles of potassium to the total number of moles of sodium and potassium of 0.460 to 0.495 in terms of atoms and a ratio ((Li+Na+K)/Nb) of the total number of moles of alkali metal elements to the number of moles of niobium of 0.995 to 1.005 in terms of atoms. The present invention can provide a piezoelectric material filler having excellent piezoelectric properties, and a composite piezoelectric material including the piezoelectric material filler and a polymer matrix.

Abstract: An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.

Abstract: A hard lead zirconate titanate (PZT) ceramic has an ABO3 structure with A sites and B sites. The PZT ceramic is doped with Mn and with Nb on the B sites and the ratio Nb/Mn is <2. A piezoelectric multilayer component having such a PZT ceramic and also a method for producing a piezoelectric multilayer component are also disclosed.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: An ultrasonic sensor includes a vibration plate that includes a vibration portion and is formed of a resin; a wall portion that is provided on the vibration plate, surrounds the vibration portion and is formed of a resin; and a piezoelectric element that is provided in the vibration portion of the vibration plate. Accordingly, the wall portion surrounding the vibration portion can suppress a frequency variation of an ultrasonic wave output from the ultrasonic sensor and can deform the ultrasonic sensor into a shape corresponding to a surface of an object having various shapes.

Abstract: A multilayer capacitor includes a body having a plurality of dielectric layers and first and second internal electrodes alternately disposed with the dielectric layers interposed therebetween, and further including an active region in which the first and second internal electrodes overlap each other, and upper and lower covers disposed above and below the active region, respectively; and first and second external electrodes disposed on the body to be connected to the first and second internal electrodes, respectively, wherein the upper and lower covers include barium titanate (BT, BaTiO3) and Yttria-stabilized zirconia (YSZ).

Abstract: A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986?c/a?1.014.

Abstract: A piezoelectric actuator includes: a vibration plate: a first piezoelectric body arranged on one side in a thickness direction of the vibration plate; a second piezoelectric body arranged on a side, of the first piezoelectric body, opposite to the vibration plate in the thickness direction; a first electrode arranged between the vibration plate and the first piezoelectric body; a second electrode arranged between the first and second piezoelectric bodies in the thickness direction, and overlapping with the first electrode in the thickness direction; and a third electrode arranged on a side, of the second piezoelectric body, opposite to the first piezoelectric body in the thickness direction, and overlapping with the second electrode in the thickness direction. The second piezoelectric body covers at least a part of a first end surface, of the first piezoelectric body, which is an end surface in a first direction orthogonal to the thickness direction.

Abstract: A piezoelectric thin film device 10 includes a conductive layer 4 and a piezoelectric thin film 2 laminated directly on a surface of the conductive layer 4. The piezoelectric thin film 2 contains a plurality of crystalline grains having a wurtzite structure, a (001) plane of at least a part of the crystalline grains is oriented in a normal direction DN of the surface of the conductive layer 4, and a median diameter of the plurality of crystalline grains in a direction parallel to the surface of the conductive layer 4 is 30 nm or more and 80 nm or less.

Abstract: A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

Abstract: Provided is a nickel-based composite coating, method for producing the same and use thereof. A powder mixture is coated on the surface of a substrate to obtain a nickel-based composite coating, wherein the powder mixture comprises nickel-chromium-boron-silicon powders and barium titanate powders. The barium titanate powders are added to the nickel-based powders as a second phase to form BaTiO3—NiCrBSi metal-based ceramic composite coating. The nickel-based barium titanate composite coating has an excellent damping shock absorbing performance and gives the substrate strength as well. Comparing with the conventional coating materials, the coating obtained by the present disclosure through plasma cladding technique not only bonds with the substrate in a metallurgic way, but also has a small heat affected zone, specifically, an excellent damping shock absorbing performance.

Abstract: An apparatus (100) for generating a high voltage or high field strength and a component (200) for generating a high voltage or high field strength are disclosed. A means (20) that is provided in a defined area (23) of the cylindrical and dielectric housing (11) or the sleeve (202) of the component (200). The means (20) ensures that, in a space (15) of the defined area (23), between the piezoelectric transformer (1) and an inner wall (14) of the dielectric housing (11), an essentially symmetrical field distribution (16) prevails. Even with an external influence (80), the field distribution (16) is influenced in such a way that an ignition field strength in space (15) of the defined area (23) is avoided.

Abstract: Provided is a method for inspecting a piezoelectric element in which voltage is applied to a piezoelectric element and evaluation of the electrical characteristics of the piezoelectric element is performed. The method includes a first step in which the piezoelectric element is held on a flat plate-shaped slightly adhesive sheet and a second step in which voltage is applied to the piezoelectric element held on the slightly adhesive sheet and evaluation of the electrical characteristics of the piezoelectric element is performed.

Abstract: An elastic wave device in which an IDT electrode defines an excitation electrode on a piezoelectric layer, an acoustic reflection layer is laminated on a first main surface of the piezoelectric layer, the acoustic reflection layer includes high acoustic impedance layers with a relatively high acoustic impedance and low acoustic impedance layers with a relatively low acoustic impedance, and the acoustic reflection layer has an unwanted wave reflection suppression structure in which reflection of unwanted waves toward the piezoelectric layer side is significantly reduced or prevented.

Abstract: A bonded body includes a supporting substrate; a piezoelectric single crystal substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an amorphous layer present between the supporting substrate and piezoelectric material substrate, and the amorphous layer contains one or more metal atoms selected from the group consisting of niobium and tantalum, an atom constituting the supporting substrate, and an argon atom. A concentration of the argon atom in a central part of the amorphous layer is higher than a concentration of the argon atom in a peripheral part of the amorphous layer.

Abstract: Provided is a configuration capable of improving the signal strength of a piezoelectric element using piezoelectric fibers. This braided piezoelectric element comprises a core comprising conductive fibers and a sheath comprising braided piezoelectric fibers so as to cover the core, the braided piezoelectric element further comprising a metal terminal connected and fixed to the core in either of the following states A or B. A) A state where a portion of the metal terminal grasps a fiber portion constituting the end of a braided piezoelectric element and the core and the metal terminal are electrically connected to each other and fixed within 1 mm from where the metal terminal grasps the fiber portion.

Abstract: The present invention relates to a bismuth-based solid solution ceramic material, as well as a process for preparing the ceramic material and uses thereof, particularly in an actuator component employed, for example, in a droplet deposition apparatus. In particular, the present invention relates to a ceramic material having a general chemical formula (I): (I): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-z1SrHfO3-z2SrZrO3, wherein x+y+Z1+Z2=1; y, (z1+z2)?0; x?0. In embodiments, the present invention also relates to a ceramic material having a general chemical formula (II): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-y(Bi0.5K0.5)TiO3-ZiSrHfO3-z2SrZrO3, wherein x+y+z?i+z2=1; x, y, fa+z2)?0; as well as a ceramic material of general formula (III): y(Bi0.5K0.5)TiO3-z1SrHfO3-z2SrZrO3, wherein y+z1,+z2=1; y, (z1+z2)?0.

Abstract: A piezoelectric film includes a plurality of laminated main baking unit PZT layers. A first seed layer is present at a lower surface side of a lowermost main baking unit PZT layer. A second seed layer is interposed between two adjacent main baking unit PZT layers at an intermediate position between the lowermost main baking unit PZT layer and an uppermost main baking unit PZT layer.

Abstract: An apparatus includes a substrate, a thin film piezoelectric layer, a transducer, and a low resistivity layer. The thin film piezoelectric layer is over the substrate, the transducer includes a number of electrodes in contact with the thin film piezoelectric layer and configured to transduce an acoustic wave in the thin film piezoelectric layer. The low resistivity layer is between at least a portion of the substrate and the thin film piezoelectric layer. By providing the low resistivity layer between at least a portion of the substrate and the thin film piezoelectric layer, a spurious response of the apparatus may be significantly reduced, thereby improving the performance thereof.

Abstract: A piezoelectric thin film resonator includes: a piezoelectric film located on a substrate; lower and upper electrodes facing each other across a part of the piezoelectric film; and an insertion film located between the lower and upper electrodes, located in a part of an outer peripheral region within a resonance region where the lower and upper electrodes face each other across the piezoelectric film, and not located in a center region of the resonance region, a first width in the resonance region of the insertion film in a first region, where the upper electrode is extracted from the resonance region, being greater than a third width in the resonance region in a third region other than a second region, where the lower electrode is extracted from the resonance region, and the first region, a second width in the resonance region in a second region being the third width or greater.

Abstract: A piezoelectric element includes: a piezoelectric body; and a vibrating plate including single crystal silicon having anisotropy having orientation with a relatively high Young's modulus and orientation with a relatively low Young's modulus (hereinafter, referred to as “low Young's modulus orientation”) as a vibrating material, in which the piezoelectric body and the vibrating plate are laminated on each other so that the low Young's modulus orientation is in a direction along a high expansion and contraction direction among a direction where a degree of expansion and contraction caused according to a support structure of the piezoelectric body is relatively high (hereinafter, referred to as “high expansion and contraction direction”) and a direction where a degree thereof is relatively low.

Abstract: An ultrasonic transducer includes: a flexible film; and a piezoelectric element provided on the flexible film. The piezoelectric element includes a piezoelectric body and a first electrode, a second electrode, a third electrode, and a fourth electrode in contact with the piezoelectric body. The first electrode and the second electrode are separated from each other with the piezoelectric body interposed between the first electrode and the second electrode and overlapping each other in plan view. The third electrode and the fourth electrode are separated from each other with the piezoelectric body interposed between the third electrode and the fourth electrode and overlapping each other in the plan view. The first electrode and the third electrode are separated from each other in the plan view, and the second electrode and the fourth electrode are separated from each other in the plan view.

Abstract: A piezoelectric vibrating piece includes a piezoelectric substrate, a first excitation electrode, and a second excitation electrode. The piezoelectric substrate is formed into a flat plate shape and vibrates in a thickness-shear vibration mode. The first excitation electrode is formed on one principal surface of the piezoelectric substrate. The second excitation electrode is formed on another principal surface of the piezoelectric substrate. The first excitation electrode is formed to entirely have an identical thickness. The second excitation electrode has a main thickness portion and an inclined portion. The main thickness portion has a constant thickness. The inclined portion is formed in a peripheral area of the main thickness portion and gradually decreases in thickness from a portion in contact with the main thickness portion to an outermost periphery of the second excitation electrode. The main thickness portion has a thickness larger than the thickness of the first excitation electrode.

Abstract: Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): Ba1-xCaxTi1-yZryO3 (0?x?0.2, 0?y?0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Abstract: An oriented piezoelectric film, wherein a crystal forming the oriented piezoelectric film, is a perovskite type crystal of the general formula of Ba1-xCaxTi1-yZryO3 (0?x?0.2, and 0?y?0.2), and the oriented piezoelectric film has (111) orientation according to a pseudocubic crystal notation.

Abstract: A piezoelectric device includes a substrate that is flexible and thermally deformable, and a composite piezoelectric body disposed on the substrate. Output in accordance with deformation of the composite piezoelectric body is obtained. The composite piezoelectric body includes a piezoelectric layer containing an organic binder containing piezoelectric particles, a first electrode layer stacked on a first surface side of the piezoelectric layer, and a second electrode stacked on a second surface side of the piezoelectric layer. The substrate is insert molded and integrated with a molded resin body having a curved shape.

Abstract: A manufacturing method for an ultrasonic fingerprint sensor is provided. The method may include: preparing a sintered ceramic element under incomplete sintering conditions; forming a processed ceramic element by cutting a first surface of the sintered ceramic element along a first direction in pre-designated intervals up to such a depth that leaves a remainder region at a second surface and cutting the second surface of the sintered ceramic element along a second direction perpendicular to the first direction in pre-designated intervals up to such a depth that leaves a remainder region at the first surface; sintering the processed ceramic element under complete sintering conditions; filling an insulation material into troughs formed in the processed ceramic element by the cutting processes; and polishing the first surface and second surface to remove the remainder regions such that piezoelectric rods are exposed while arranged in an array form.

Abstract: An acoustic resonator device includes a composite first electrode disposed over a substrate; a piezoelectric layer disposed on the composite first electrode, the piezoelectric layer including a piezoelectric material doped with scandium for improving piezoelectric properties; and a second electrode disposed on the piezoelectric layer. The composite first electrode includes a base electrode layer disposed over the substrate; a temperature compensation layer disposed on the base electrode layer; a seed interlayer disposed on the temperature compensation layer, the seed interlayer having a thickness between about 5? and about 150?; and a conductive interposer layer disposed on at least the seed interlayer, at least a portion of the conductive interposer layer contacting the base electrode layer. The piezoelectric layer has a negative temperature coefficient and the temperature compensation layer has a positive temperature coefficient at least partially offsetting the negative temperature coefficient.

Abstract: An inkjet printing head includes a piezoelectric element having a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film, a hydrogen barrier film covering an entirety of a side surface of the upper electrode and the piezoelectric film, and an interlayer insulating film that has an opening at an upper surface center of the upper electrode, is laminated on the hydrogen barrier film, and faces the entirety of the side surface of the upper electrode and the piezoelectric film across the hydrogen barrier film.

Abstract: The present invention relates to a dielectric composition having a main component and an auxiliary component. The main component is represented by (BiaNabSrcLnd)TiO3, where Ln comprises a rare earth element 0.100?a?0.400, 0.100?b?0.400, 0.100?c?0.700, 0?d?0.100, and 0.900?a+b+c+d?1.50. The auxiliary component contains a first auxiliary component or a second auxiliary component. The first auxiliary component includes an element selected from the group consisting of Li and K and combinations thereof and the second auxiliary component includes an element selected from the group consisting of Cu, Zn, Mn, Mg and Co and combinations thereof.

Abstract: Electromechanical actuators may be constructed as cylindrical elements with electrodes position around the cylindrical element. The electrodes may receive an electrical signal that causes a core material in the electromechanical actuator to change shape, thus providing haptic feedback to a user, such as when the actuators are integrated with a display screen of a smart phone. A position of the electrodes around the core material may affect a mode of operation of the electromechanical actuators. In one configuration, two electrodes may be located at opposite ends of the cylindrical element along a long axis of the cylinder. In another configuration, two electrodes may be located opposite each other along a circumference of the cylinder. Signals may be applied to the electrodes to generate vibrational feedback or textures on the display screen.

Abstract: According to an embodiment, a MEMS transducer includes a stator, a rotor spaced apart from the stator, and a multi-electrode structure including electrodes with different polarities. The multi-electrode structure is formed on one of the rotor and the stator and is configured to generate a repulsive electrostatic force between the stator and the rotor. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.

Abstract: A method for producing a piezoelectric film includes forming a metal film, recrystallizing a portion of the metal film by heating, forming an amorphous film of piezoelectric material on the metal film; and heating the amorphous film at a position of the recrystallized portion of the metal film.

Abstract: A piezoelectric ceramic speaker includes a piezoelectric element using a vibration sheet formed with piezoelectric ceramic having a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains, wherein the primary phase is constituted by ceramic grains expressed by a composition formula Pb {(Zr(1-a)Tia)x·(Ni1/3Nb2/3)y·(Zn1/3Nb2/3)z}O3 (where 0<x?0.85, 0?y<1, 0<z<1, x+y+z=1, and 0.45?a?0.60); and an enclosure which encloses the piezoelectric element.

Abstract: A piezoelectric element includes a piezoelectric body that is provided on a substrate and includes multiple sides; a first wiring that is provided from the piezoelectric body to the substrate; and a second wiring that is provided from the piezoelectric body to the substrate. When the piezoelectric element is viewed from a thickness direction of the piezoelectric body, a second side and a fourth side on which the piezoelectric body is superimposed on the first wiring are different from a first side and a third side on which the second wiring is superimposed on the piezoelectric body.

Abstract: A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes a perovskite compound comprising a main component having Bi, Na, Sr, Ln and Ti, wherein Ln is at least one type of a rare earth element, and wherein a mean crystal grain size is between 0.1 ?m and 1 ?m.

Abstract: A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode <011>single crystals of both air X-cut and Y-cut ±1:45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.

Abstract: A piezoelectric element, in which a piezoelectric body, and a vibrating plate having [111]-oriented single crystal silicon as a vibrating material are laminated is provided. In addition, a manufacturing method of a piezoelectric element including: cutting out a vibrating material to be used in the vibrating plate from a [111]-oriented single crystal silicon wafer; and laminating a piezoelectric body and the vibrating plate is provided.

Abstract: A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase is 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system. Also, the area ratio of a crystal phase reflecting the second spots in the main phase is 33% or less, and the maximum grain size of crystals reflecting the second spots in the main phase is 25 nm or less.

Abstract: A lead-free piezoelectric ceramic composition including an alkali niobate/tantalate perovskite oxide main phase having piezoelectric properties and a different metal oxide subphase. The mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase assumes a value in a range represented by 0.40<(Na/K)<3.0. The main phase has a crystal structure in which (i) first spots corresponding to a primitive lattice period and (ii) second spots corresponding to the lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image entering from the <100> direction with the main phase represented as a pseudo-cubic crystal system.

Abstract: An electroacoustic component is disclosed. In an embodiment, the electroacoustic component includes a piezoelectric substrate comprising a rare earth metal and calcium oxoborates (RE-COB) and component structures arranged on the substrate, the component structures being suitable for converting between RF signals and acoustic waves, wherein the waves are capable of propagation in a direction x??, and wherein the direction x?? is determined by Euler angles (?, ?, ?), the Euler angles being selected from angle ranges (20-90, 95-160, 15-55), (20-85, 95-160, 95-125) and (15-25, 85-100, 0-175).

Abstract: A multilayer ceramic capacitor includes a multilayer body including ceramic layers and including main surfaces, side surfaces, and end surfaces, inner electrodes, which are located inside the multilayer body and a portion of each of which extends to one main surface, and outer electrodes located on one main surface and connected to the inner electrodes. Each of the outer electrodes includes outer electrode side surface portions located up to a portion of each of the side surfaces and an outer electrode end surface portion located up to one end surface, and about 1.40?A/B?about 3.33 is satisfied, where the lengths of the outer electrode side surface portions in the direction in which the main surfaces are connected are indicated as A and the lengths of the outer electrode end surface portions in the direction in which the main surfaces are connected are indicated as B.

Abstract: A barium titanate piezoelectric ceramic having good piezoelectric properties and mechanical strength and a piezoelectric element that includes the ceramic are provided. A method for making a piezoelectric ceramic includes forming a compact composed of an oxide powder containing barium titanate particles, sintering the compact, and decreasing the temperature of the compact after the sintering. The sintering includes (A) increasing the temperature of the compact to a first temperature within a temperature range of a shrinking process of the compact; (B) increasing the temperature of the compact to a second temperature within a temperature range of a liquid phase sintering process of the compact after (A); (C) decreasing the temperature of the compact to a third temperature within the temperature range of the shrinking process of the compact after (B); and (D) retaining the third temperature after (C).