Abstract: To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K1-xNax)NbO3 (0<x<1), wherein an intensity of a higher angle side skirt field is stronger than an intensity of a lower angle side skirt field of a diffraction peak in a KNN (002) diffraction peak in an X-ray diffraction 2?/? pattern of the piezoelectric thin film element.

Abstract: There are provided an electrode structure of a piezoelectric resonator and a piezoelectric resonator including the same. The piezoelectric resonator includes: a piezoelectric plate vibrated by an electrical signal; and first and second electrodes having first to fourth layers stacked on both surfaces thereof, wherein the first and third layers are made of at least one selected from the group consisting of Ti, Ni, Cr, an alloy including Ti and an alloy including Cr and the second and fourth layers are made of Ag or an alloy including Ag.

Abstract: A linear motor system includes an element with a threaded passage, a threaded shaft, and a driving system. The threaded shaft has an axis of rotation which extends through and is at least partially engaged with at least a portion of the threaded passage. The driving system comprises at least two members operatively connected to the element. Each of the two members comprises two or more piezoelectric layers and electrodes which are coupled to opposing surfaces of each of the piezoelectric layers. The members are configured to expand and contract in a direction along the axis of rotation. The driving system is configured to subject the element to vibrations causing the threaded shaft to simultaneously rotate and translate in the direction along the axis of rotation through the element and apply an axial force in the direction along the axis of rotation.

Abstract: The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed. The present invention provides a method for driving an actuator, comprising the following steps (a) and (b): a step (a) of preparing the actuator, wherein the actuator comprises a first electrode, a piezoelectric layer composed of (Bi,Na,Ba)TiO3, and a second electrode, the piezoelectric layer is interposed between the first electrode and the second electrode, +X direction, +Y direction, and +Z direction denote [100] direction, [01-1] direction, and [011] direction, respectively, and the piezoelectric layer is preferentially oriented along the +Z direction; and a step (b) of applying a potential difference between the first electrode and the second electrode to drive the actuator.

Abstract: A method for driving a liquid ejector (1) provided with a piezoelectric actuator (7) including a piezoelectric ceramic layer (6) having a size covering a plurality of pressurizing chambers (2). An arbitrary piezoelectric deformation region (8) of the liquid ejector (1) is deflected in one thickness direction and the opposite direction individually by applying a driving voltage waveform including a first voltage (?VL) and an equivalent second voltage (+VL) of the opposite polarity in order to vary the volume of the pressurizing chambers (2) of a corresponding liquid droplet ejecting portion (4), and a liquid droplet is ejected through a communicating nozzle (3). Since gradual creep deformation of the inactive region (16) of the piezoelectric ceramic layer (6) is prevented, the ink droplet ejection performance is maintained at a good level over a long period.

Abstract: An actuator includes a fired ceramic substrate having a space opened downward, a first electrode formed on the upper surface of the fired ceramic substrate above the space, a piezoelectric/electrostrictive body formed on the first electrode so that the volume changes with input and output of electric power, and a second electrode formed on the piezoelectric/electrostrictive body. The piezoelectric/electrostrictive body is composed of Pb(Zr1-xTix)O3 or (Li, Na, K) (Nb, Ta)O3 as a main component and contains crystals oriented along the direction of an electric field. In the actuator, the degree of orientation of the piezoelectric/electrostrictive body can be increased regardless of the orientation of the substrate on which the piezoelectric/electrostrictive body is formed.

Abstract: A method for producing ceramic articles with multiple distinct regions of density by blending pore formers of different types or amounts with ceramic particles to create multiple pore former/ceramic particle mixtures. The mixtures are placed in a divided die cavity, divider removed and subjected to compaction under pressure to produce a compacted billet. The compacted billet is thermally processed to volatilize organics from the billet and sinter the billet, creating a cohesive billet of ceramic having two or more regions of density.

Abstract: A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx, Tiy, Mb?x?y)bOc ??(P) (wherein M represents one or two or more metal elements; wherein 0<x<b, 0<y<b, 0?b?x?y; and wherein a molar ratio a:b:c is 1:1:3 as a standard; however, the molar ratio may be varied from the standard molar ratio within a range where a perovskite structure is obtained). The perovskite oxide (P) has a signal intensity ratio I(Pb4+)/I(Pb2+) between Pb4+ and Pb2+ of not less than 0.60 measured through XAFS.

Abstract: Provided is a piezoelectric ceramic composition which can increase Qmax of a resonator and inhibit the resonator from changing its oscillation frequency F0 under a low temperature environment. The piezoelectric ceramic composition has a structure represented by the following general formula (1): (Pb?Ln?Me?)(Ti1?(x+y+z)ZrxMnyNbz)O3??(1) where Ln is a lanthanoid element, Me is an alkaline-earth metal element, ?>0, ?>0, ??0, 0.965??+?+??1.000, 0.158?x?0.210, y?0, z?0, and 1?(x+y+z)>0.

Abstract: An alkali niobate-based piezoelectric/electrostrictive ceramics sintered body including, as a main crystal phase, a perovskite type oxide containing at least one type of element selected from the group consisting of Li, Na and K as A site constituent elements and at least one type of element selected from the group consisting of Nb and Ta as B site constituent elements. The number of lattice-strained layers of the piezoelectric/electrostrictive ceramics sintered body is preferably small. A diffuse scattering intensity ratio, which is a ratio of an intensity of diffuse scattering by a lattice-strained layer present near a domain wall to a sum of an X-ray diffraction intensity of a first lattice plane and that of a second lattice plane different in interplanar spacing from the first lattice plane due to crystallographic symmetry reduction is preferably 0.5 or lower.

Abstract: A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount.

Abstract: A piezoelectric porcelain composition includes a main ingredient represented by a general formula ((1?x)(K1?a?bNaaLib) (Nb1?cTac)O3?xM2M4O3) (where M2 represents Ca, Ba or Sr, M4 represents Zr, Sn or Hf, and 0.005?x?0.1, 0?a?0.9, 0?b?0.1, 0?a+b?0.9, and 0?c?0.3), and Mn is contained in an amount ranging from 2 to 15 mol, relative to 100 mol of the main ingredient, and the M4 is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient. Preferably, Ni is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient, and also preferably Yb, In and the like specific rare earth elements is contained. A ceramic layer in a ceramic base is formed of this piezoelectric porcelain composition. As a result, the degree of sintering in a reductive atmosphere is improved, and a piezoelectric porcelain composition allowing co-sintering with Ni, and a piezoelectric ceramic electronic component using the same are realized.

Abstract: Provided is a lead-free piezoelectric thin film containing a lead-free ferroelectric material and having low dielectric loss, high electromechanical coupling coefficient and high piezoelectric constant comparable to that of lead zirconate titanate (PZT). The piezoelectric thin film of the present invention has a (Bi, Na, Ba)TiO3 film composed of a perovskite composite oxide (Bi, Na, Ba)TiO3. The (Bi, Na, Ba)TiO3 film has (001) orientation and further contains Ag. The (Bi, Na, Ba)TiO3 film has a mole ratio of Ag to Ti of at least 0.001 but not more than 0.01.

Abstract: The present invention relates to lead-free piezoelectric ceramic materials comprising crystalline (and preferably perovskite crystalline) structures of the formula Bi1-x(RE)xFeO3, where RE is one or more of La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and 0?x?0.3. The materials are at or near the morphotropic phase boundary and display enhanced piezoelectric and dielectric properties.

Abstract: Disclosed herein is a device comprising a pair of electrodes; and a nanotube, a nanorod and/or a nanowire; the nanotube, nanorod and/or nanowire comprising a piezoelectric and/or pyroelectric polymeric composition; the pair of electrodes being in electrical communication with opposing surfaces of the nanotube, nanorod and/or a nanowire; the pair of electrodes being perpendicular to a longitudinal axis of the nanotube, nanorod and/or a nanowire.

Abstract: A lighting device implemented through utilizing an insulating type piezoelectric transformer in driving light-emitting-diodes (LEDs), comprising at least said insulating type piezoelectric transformer connected to an LED module, a primary side of said insulating type piezoelectric transformer is used to receive a pulse voltage, and that is converted into an AC voltage in a piezoelectric voltage transformation way, and said AC voltage is output from a secondary side of said insulating type piezoelectric transformer to said LED module in proceeding with lighting function. Due to its various advantages of small leakage current, good insulation capability, high voltage endurance, low operation temperature, compact size, thin profile, high energy conversion efficiency, said insulating type piezoelectric transformer can be used to not only raise lighting efficiency, but also reduce overall size of said lighting device.

Abstract: Piezoelectric actuators having a composition of Pb1.00+x(Zr0.52Ti0.48)1.00?yO3Nby, where x>?0.02 and y>0 are described. The piezoelectric material can have a Perovskite, which can enable good bending action when a bias is applied across the actuator.

Abstract: A piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti). The piezoelectric film has a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) and has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(?) of ?1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(?) denotes a negative coercive electric field intensity.

Abstract: A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ.

Abstract: A piezoelectric ceramic composition includes a main component represented by general formula {(Pb1-x-yCaxSry) {Ti1-z(Ni1/3Nb2/3)z}O3}, wherein 0?x?0.2 (preferably 0?x?0.15), 0?y?0.2 (preferably 0?y?0.1), 0.05?x+y?0.2, and 0.02?z?0.1. Furthermore, a Mn component is preferably present in an amount of 1.0 part by weight or less (excluding zero) (more preferably 0.05 to 1.0 part by weight) in terms of MnCO3 with respect to 100 parts by weight of the main component. A piezoelectric element includes a piezoelectric ceramic body composed of this piezoelectric ceramic composition. Firing can be performed at a low temperature of about 1,100° C. The piezoelectric element has a high Curie point Tc, can withstand solder reflow treatment, and achieves satisfactory piezoelectric properties.

Abstract: A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.

Abstract: A piezoelectric single crystal ingot is produced by the Bridgman method and contains a relaxor having a composition of Pb(Mg, Nb)O3 and lead titanate having a composition of PbTiO3. In the piezoelectric single crystal ingot, the compositional fraction of lead titanate does not vary monotonically in the growth direction of a single crystal and the variation of the compositional fraction thereof is within the range of ±2.0 mole percent over a length of 30 mm or more. A piezoelectric single crystal device is produced from the piezoelectric single crystal ingot.

Abstract: A ferroelectric film having a columnar structure constituted by a plurality of columnar grains, and containing as a main component a perovskite oxide which has a composition expressed by a compositional formula A1+?[(ZrxTi1?x)1?yMy]Oz, where A represents one or more A-site elements including lead (Pb) as a main component, M represents one or more of vanadium (V), niobium (Nb), tantalum (Ta), and antimony (Sb) as one or more B-site elements, zirconium (Zr) and titanium (Ti) are also B-site elements, 0<x?0.7, 0.1?y?0.4, ? is approximately zero, z is approximately 3, and ? and z may deviate from 0 and 3, respectively, within ranges of ? and z in which the composition expressed by the compositional formula A1+?[(ZrxTi1?x)1?yMy]Oz can substantially form a perovskite structure.

Abstract: A multilayer piezoelectric actuator and a liquid discharge head are provided which are equipped with dense piezoelectric ceramics having improved insulation performance. The multilayer piezoelectric actuator comprises a multilayered body comprising a plurality of piezoelectric ceramic layers containing a PZT phase as a main crystal phase; and an electrode layer containing Ag, which is disposed at least one of on the surface and in the interior of the multilayered body. A lattice constant c of c-axis of the PZT phase is 0.4085 nm to 0.4100 nm, and a ratio of the lattice constant c of the c-axis of the PZT phase and a lattice constant a of a-axis, namely, the ratio c/a, is 1.011 or more. A second phase containing Ag different from the PZT phase is not substantially contained in the piezoelectric ceramic layer. A Zn2SiO4 phase is contained at grain boundaries of the PZT phase, and a Pb2SiO4 phase is not substantially contained at the grain boundaries of the PZT phase.

Abstract: A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1?x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1?x)Tc(A)+xTc(B)?300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B.

Abstract: A piezoelectric thin film element has a piezoelectric thin film on a substrate, the piezoelectric thin film has a (K1-x,Nax)NbO3thin film expressed by a compositional formula (K1-xNax)NbO3(0 <x <1) with a perovskite structure, and a ratio of an out-of-plane directional lattice constant c to an in-plane directional lattice constant a of the thin film is in a range of 0.98 ?c/a ?1.01.

Abstract: An actuator includes a first electrode disposed on the top surface of a ceramic substrate (for example, zirconium oxide), a piezoelectric/electrostrictive substance disposed on the first electrode, and a second electrode disposed on the piezoelectric/electrostrictive substance, wherein the input of an electric power alters the volume of the piezoelectric/electrostrictive substance. The piezoelectric/electrostrictive substance contains a plurality of crystal grains that have a wavy structure composed of wavy grain boundaries including concave portions and convex portions. The crystal grains contain ABO3 as the main component. The A site is Pb, and the B site contains such an amount of M that M becomes excessive after the piezoelectric/electrostrictive substance is formed (wherein M is at least one element selected from Mg, Ni, and Zn). The crystal grains of the piezoelectric/electrostrictive substance are oriented in the electric field direction, independently of the orientation of the substrate.

Abstract: A liquid ejecting head including a pressure-generating chamber which communicates with a nozzle opening, and a piezoelectric element including a first electrode, a piezoelectric layer formed above the first electrode and having a perovskite structure represented by the general formula ABO3, and a second electrode formed above the piezoelectric layer, wherein the piezoelectric layer, lead, zirconium, and titanium are present at A sites of the perovskite structure, and lead, zirconium, and titanium are present at B sites of the perovskite structure.

Abstract: A piezoelectric/electrostrictive membrane element is provided, including a ceramic substrate, a membranous piezoelectric/electrostrictive portion including a piezoelectric/electrostrictive body made of a large number of crystal particles having a lead zirconate titanate based piezoelectric/electrostrictive ceramic composition, and membranous electrodes electrically connected to the piezoelectric/electrostrictive portion. The crystal particles include crystal main body portions, and surface layer portions arranged in at least a part of the outer periphery of crystal main body portions and having a crystal structure which is different from that of the crystal main body portions. The piezoelectric/electrostrictive portion is bonded in a solid state to the substrate directly or via electrodes.

Abstract: A piezoelectric ceramic includes a main constituent represented by the general formula {(1?x) (K1-a-bNaaLib)(Nb1-cTac)O3}?xM2M4O3}, and as accessory constituents, 2? mol of Na, (?+?) mole of an M4? element, and ? mol of Mn with respect to 100 mol of the main constituent, where 0.1????, 1??+??10, and 0???10, M2 is Ca, Ba, and/or Sr, the M4 element and the M4? element are Zr, Sn, and/or Hf, 0?x?0.06, 0?a?0.9, 0?b?0.1, and 0?c?0.3. Even in the case of using Ni as the main constituent in an internal electrode material of a piezoelectric element and carrying out co-firing, favorable piezoelectric properties can be obtained without defective polarization.

Abstract: To provide a piezoelectric ceramic containing BiFeO3 having a {110} plane orientation in a pseudo-cubic form, which is suited for the domain engineering, the piezoelectric ceramic includes a perovskite-type metal oxide represented by the following general formula (1), and has a {110} plane orientation in a pseudo-cubic form: xBiFeO3-(1-x)ABO3??General Formula (1) where A and B each represent one kind or more of metal ions; A represents a metal ion having a valence of 1, 2 or 3; and B represents a metal ion having a valence of 3, 4, or 5, provided that x is within a range of 0.3?x?1.

Abstract: A piezoelectric thin film element includes a substrate, a lower electrode, a piezoelectric thin film, and an upper electrode. The lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate. The piezoelectric thin film includes a polycrystal thin film including crystal grains, an alkali niobium oxide based perovskite structure represented by a general formula: (K1-xNax)NbO3 (0.4<x<0.7), a film thickness of not less than 1 ?m and not more than 10 ?m, a columnar structure configured by the crystal grains, a majority of the crystal grains including a shape in a cross-section direction thereof longer than in a plane direction of the substrate, and an average crystal grain size of not less than 0.1 ?m and not more than 1.0 ?m in the plane direction of the substrate.

Abstract: A piezoelectric thin film element includes a bottom electrode, a piezoelectric layer and a top electrode on a substrate. The piezoelectric layer includes as a main phase a perovskite-type oxide represented by (NaxKyLiz)NbO3 (0?x?1, 0?y?1, 0?z?0.2, x+y+z=1), and the bottom electrode includes a surface roughness of not more than 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.

Abstract: A piezoceramic material according to an embodiment of the present invention has a composition represented by Pbm{Zr1-x-y-zTixSny(Sb1-nNbn)z}O3 where 1.000?m?1.075, 0.470?x<0.490, 0.020?y?0.040, 0<n<1.000 and 0<z?0.025 and a crystallite size of 30 to 39 nm.

Abstract: A sensor for detecting a physical quantity includes a piezoelectric thin film device having a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and a (001)KNN plane diffraction peak of the piezoelectric thin film indicates an angle 2? from 22.1° to 22.5° in an X-ray diffraction 2?/? measurement to a surface of the piezoelectric thin film, and the (001)KNN plane diffraction peak occupies 80% or more of diffraction peaks of the piezoelectric thin film.

Abstract: A piezoelectric ceramic base member is formed of a bar shaped bismuth layer compound, and has main electrodes on two end surfaces in an oscillation direction, with connection electrodes at side-surface central portions of the piezoelectric ceramic base member electrically connected to the main electrodes through extraction conductors interposed therebetween, respectively. The oscillation and polarization directions are set in the same direction, and the piezoelectric ceramic base member is driven at a resonant frequency or at a frequency in the vicinity thereof. The crystal c axis is preferably oriented in a direction orthogonal to the polarization direction. The resonant actuator is able to obtain a high oscillation speed as it has a large mechanical quality factor Qm, and the oscillation is not disturbed by mechanical factors.

Abstract: A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the axis makes an angle ?m satisfying the condition that ?45 degrees<?m<+45 degrees and ?m?0 degrees. Further, the spontaneous-polarization axis or the axis may be perpendicular to the thickness direction of the piezoelectric film.

Abstract: A hybrid piezoelectric composite comprises a layer of a polymer matrix comprising particles of a PZT group in a micro range of dimensions, which is sandwiched between two layers of a polymer matrix comprising particles of a dielectric material in a nano range of dimensions. The materials of both layers are polarized with electrothermal polarization. The polymer matrices of both component composites may comprise high-density polyethylene, polyvinylidene fluoride, polypropylene, or low-density polyethylene. The dielectric material of the first component nanocomposite may be selected from the group consisting of SiO2 and BaTiO3, and the ceramic particles of the second component are made from a piezoelectric ceramic material of a PZT group having a tetragonal structure.

Abstract: The invention provides a (Li, Na, K)(Nb, Ta)O3 type piezoelectric/electrostrictive ceramic composition capable of being sintered at a low temperature and providing good electric field-induced strain at the time of high electric field application at a temperature for practical use. The piezoelectric/electrostrictive ceramic composition has an ABO3 type composition formula wherein lithium, sodium, and potassium are contained as first elements; niobium and tantalum are contained as second elements; oxygen (O) is contained as a third element; A/B ratio is higher than 1; and the ratio of the number of Ta atoms to the total number of atoms of the second elements is 10 mol % or more and 50 mol % or less, and comprises a perovskite type oxide wherein the first elements are A site composing elements and the second elements are B site composing elements.

Abstract: A piezoelectric multi-layer component is described herein. The component includes a plurality of ceramic layers, and one or more electrode layer. The one or more electrode layer has a material structure that is different than the plurality of ceramic layers and is configured to at least partially block a propagation in a longitudinal direction of pressure waves acting on the piezoelectric multi-layer component.

Abstract: A multilayered piezoelectric element and a method of producing the multilayered piezoelectric element are disclosed. The multilayered piezoelectric element is made of piezoelectric ceramic layers and electrode formation layers which are alternately laminated. The piezoelectric ceramic layers are made of crystal oriented ceramic as polycrystalline material. The crystal oriented ceramic is made mainly of an isotropic perovskite type compound in which the specific {100} crystal plane of each of crystal grains that form the polycrystalline material is oriented. The electrode formation layers have electrode parts forming inner electrodes containing a conductive metal. The isotropic perovskite type compound is expressed by a general formula (1): [Agh{Lix(K1-yNay)1-x}1-h]j(Nb1-z-wTazSbw)O3-k ??(1), where 0?x?0.2, 0?y?1, 0?z?0.4, 0?w?0.2, x+z+w>0, 0<h?0.05, 0.94?j?1, and 0?k?0.5).

Abstract: A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb1+X(ZrYTi1?Y)O3+X(0?X?0.3, 0?Y?0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to difference between the first and the second thermal expansion coefficients is 10 m or more at room temperature. The piezoelectric thin film has a thickness of 0.2 ?m to 10 ?m. The piezoelectric thin film is oriented in one of plane orientations (001), (110), and (111).

Abstract: In a piezoelectric device that uses a vibration mode in a direction parallel to a polarization direction, a single crystal device that achieves an electromechanical coupling factor of 65% or more, which is more than the electromechanical coupling factor (about 60%) of the existing flat plane type piezoelectric single crystal device in that vibrational direction, is provided by performing certain treatment to its device plane. Specifically, a piezoelectric portion having a comb-shaped structure in which a plurality of slits are formed with a certain arrangement pitch on either of device planes whose polarization direction is their normal direction, the slits having a depth extending in a direction substantially perpendicular to the device plane and being filled with an insulating material, is formed to achieve 65% or more of an electromechanical coupling factor in a direction parallel to the polarization direction.

Abstract: The piezoelectric actuator comprises: a supporting substrate; a thermal stress controlling layer which is formed on the supporting substrate; and a piezoelectric body which is formed as a film onto the thermal stress controlling layer on the supporting substrate at a higher temperature than room temperature, wherein the thermal stress controlling layer reduces a film stress induced by formation of the piezoelectric body.

Abstract: A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3 and ACO3.

Abstract: A piezoelectric material contains a material with the molecular formula P1?c?dDcZd, wherein: 0<c?0.15 and 0?d?0.5, wherein P represents the composition Pb(Zr1?yTiy)O3 and wherein: 0.50?1?y?0.60, wherein Z represents an additional component of the perovskite type of structure, wherein D represents a material according to the general formula [(M1O)1?p(M2O)p]a[Nb2O5]1?a, wherein M1 represents Ba1?tSrt with 0?t?1 and M2 represents strontium or calcium and wherein: ?<a<1 and 0<p<1, wherein the material D contains the cryolite type of structure.

Abstract: A main component of a piezoelectric substance is PZT which has a perovskite type structure expressed as Pb(ZrxTi1-x)O3, in which x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula, an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.2 to 0.8 inclusive, and a Curie temperature Tc of the piezoelectric substance and a Curie temperature Tc0 in bulk at an element ratio of Zr and Ti of the piezoelectric substance satisfy a relation of Tc>Tc0+50° C.

Abstract: Provided is a manufacturing method for preferentially-oriented oxide ceramics having a high degree of crystal orientation. The manufacturing method includes: obtaining slurry containing an oxide crystal B having magnetic anisotropy; applying a magnetic field to the oxide crystal B, and obtaining a compact of the oxide crystal B; and subjecting the compact to oxidation treatment to obtain preferentially-oriented oxide ceramics including a compact of an oxide crystal C having a crystal system that is different from a crystal system of one of a part and a whole of the oxide crystal B. By (1) reacting raw materials, (2) reducing the oxide crystal A, or (3) keeping the oxide crystal A at high temperature and quenching the oxide crystal A, the oxide crystal B is obtained to be used in the slurry.

Abstract: A ceramic material includes lead zirconate titanate, which additionally contains Nd and Ni. For example, the ceramic material may have a composition according to the following formulae: for y?x/2: a PbO+(Pb1?3x/2+y?x/2?yNdx)((Zr1?zTiz)1?yNiy)O3 for y>x/2: a PbO+(Pb1?xNdx)((Zr1?zTiz)1?yNiy)O3?y+x/2?y?x/2, where 0?a<1, 0<x<1, 0<y<1, 0<z<1, a stands for an excess of PbO in the weigh-in, ? represents a Pb vacancy and ? represents an O vacancy.