Abstract: A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first cold-weld ring disposed between the cathode element and the annular insulating spacer and a second cold-weld ring disposed between the annular insulating spacer and the diamond window element. The cathode capsule is formed by a vacuum cold-weld process such that the first cold-weld ring forms a hermetical seal between the cathode element and the annular insulating spacer and the second cold-weld ring forms a hermetical seal between the annular spacer and the diamond window element whereby a vacuum encapsulated chamber is formed within the capsule.

Abstract: An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

Abstract: The object of the present invention is to provide a field emission device that emits an electron beam bundle whose spot profile on a display screen has as little distortion as possible, and that maintains a stable electron emission property regardless of the length of a driving time, a CRT apparatus equipped with such field emission device, and a production method of such CRT apparatus. The field emission device (10) has, on a surface of a substrate (11), a plurality of cathode electrodes (12) parallel to each other, an insulation layer (13), and a plurality of extraction electrodes (14) parallel to each other, in the stated order, the cathode electrodes (12) and the extraction electrodes (14) being orthogonal to each other and so yielding a plurality of crossover regions. At the crossover regions, electron emission zones (15) each made up of four emitters (16) are formed.

Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A crossed-field amplifier has a cathode in the form of a P-N junction semiconductor which is biased to the conductive state to cause the crossed-field amplifier to amplify. The P and N regions of the semiconductor are connected to an energy source which is pulsed to produce conduction in the P-N junction and thereby allow secondary emission from the cathode. A reverse bias voltage prevents secondary emission from the cathode. The tube requires only low voltages to be applied to the cathode P-N junction to completely deactivate the crossed-field amplifier tube without requiring the removal of the RF drive pulse applied to the cathode- or anode-slow-wave circuit and without requiring the removal of the DC high voltage power supply which therefore need not be pulsed.

Abstract: A high velocity electron beam scanning negatively charge biased image pickup tube has a target which includes at least a transparent conductive layer, a photoconductor layer and a layer for secondary electron emission on a light-transmissive insulating substrate, and in which the transparent conductive layer is arranged on a light incidence side, the photoconductor layer being made of amorphous silicon.

Abstract: An image pick-up tube has a photoelectric conversion target including a transparent substrate, and a transparent electrode and a photoconductive layer formed on the transparent substrate. An electron beam is scanned on the photoelectric conversion target. A first electrode is formed on a beam scanning surface of the photoconductive layer so as to be segmented in stripe or grid with its electrode segments electrically connected to each other. A second electrode is formed on the first electrode through an insulating layer with its electrode segments electrically connected to each other. An insulating layer may be interposed between the first electrode and the photoconductive layer.

Abstract: An image pickup tube of high velocity electron beam scanning and negatively charging system having a target including, on a transparent substrate, at least a transparent conductive film, a photoconductive layer, a layer for emitting secondary electrons, and stripe electrodes. The transparent substrate may be made of amorphous silicon.

Abstract: A Field Emitter Array comprising a semiconductor substrate with an emitter urface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid I.sub.max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where I.sub.max =j.sub.sat X A.sub.p-n, j.sub.sat being the saturation current density and A.sub.p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating an electric field that induces the emission of the electron current from the emitter tips.

Abstract: A TV camera tube suitable for the HN system comprising a glass faceplate covered by an n-type transparent electrode layer consisting of Nesa glass on which a thin p.sup.+ -type layer, a p-type layer and an n-type layer are deposited in succession to form a photoconductive layer. A blocking layer is deposited on the photoconductive layer to form a protected photoconductive target. A metal mesh covered by an insulating material and a collector electrode for collecting secondary electrons emitted from the target are arranged on the electron beam scanning side of the target.