Abstract: Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing. The improvements may be done by reducing parasitic effects, increasing sense element packing density, interleaving a Z-axis layout to reduce a subtractive effect, and optimizing an alignment between a Z-axis sense element and a flux guide, etc.

Abstract: A magnetic sensor includes a magnetic sensor chip that includes a magnetoresistive effect element and a sealed part. The magnetoresistive effect element includes a free layer and a pinned layer. The sealed part has a first surface and a second surface, which is opposite the first surface. The shape of the sealed part in the plan view from the first surface side is substantially quadrilateral. The substantially quadrilateral shape has a first side and a second side, which are substantially parallel to each other. In the plan view, from the first surface side of the sealed part, the magnetization direction of the pinned layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is inclined with respect to an approximately straight line found through the least squares method using a plurality of points arbitrarily set on the first side.

Abstract: A magnetizing device includes a magnet and a magnetic field concentrator. The magnet has a magnetic field forming a magnetization region in which a magnetizable security element is exposed to a magnetic field strength having a defined magnetic field direction. The magnetic field concentrator is formed of a ferromagnetic material. The magnetic field concentrator is arranged in the magnetic field and amplifies and focuses the magnetic field in the magnetization region.

Abstract: The present disclosure provides a magnetic multi-turn sensor comprising a continuous coil of magnetoresistive elements and a method of manufacturing said sensor. The continuous coil is formed on a substrate such as a silicon wafer that has been fabricated so as to form a trench and bridge arrangement that enables the inner and outer spiral to be connected without interfering with the magnetoresistive elements of the spiral winding in between. Once the substrate has been fabricated with the trench and bridge arrangement, a film of the magnetoresistive material can be deposited to form a continuous coil on the surface of the substrate, wherein a portion of the coil is formed in the trench and a portion of the coil is formed on the bridge.

Abstract: The magnetic sensor of the invention has an element portion that is elongate, that exhibits magnetoresistive effect and that has a magnetically sensitive axis in a direction of a short axis thereof. The element portion is non-oval and can be arranged in an imaginary ellipse, wherein the imaginary ellipse has a major axis that connects both ends of the element portion with regard to a direction of a long axis thereof to each other and a minor axis that connects both ends of the element portion with regard to a direction of the short axis thereof to each other, as viewed in a direction that is perpendicular both to the short axis and to the long axis of the element portion.

Abstract: Magnetic current sensor, including: a sensor bridge circuit including a first and second half-bridges, each including two series-connected and diagonally opposed tunnel magnetoresistive (TMR) sensor elements, the TMR sensor elements including a reference layer oriented a single predetermined direction and a sense layer having a sense magnetization; a field line configured for passing a field current generating a magnetic field adapted for orienting the sense magnetization of the diagonally opposed TMR sensor elements of the first half-bridge and of the diagonally opposed TMR sensor elements of the second half-bridge in an opposite direction; such that a non-null differential voltage output between the TMR sensor elements of the first half-bridge and the TMR sensor elements of the second half-bridge is measurable when the field current is passed in the field line; the differential voltage output being insensitive to the presence of an external uniform magnetic field.

Abstract: A position detection device includes a magnet that generates a magnetic field to be detected, and a magnetic sensor. The magnetic sensor detects the magnetic field to be detected and generates a detection value corresponding to the position of the magnet. The magnetic field to be detected has a first direction that changes within a first plane, at a reference position in the first plane. The magnetic sensor includes four MR elements. Each of the MR elements includes a first magnetic layer having first magnetization that can change in direction within a second plane corresponding to the each of the MR elements. The first plane and the second plane intersect at a dihedral angle ? other than 90°. A detection value depends on the direction of the first magnetization.

Abstract: A magnetic sensor device includes a first detection circuit that generates a first detection signal, a coil through which a feedback current is passed to generate a cancellation magnetic field, a second detection circuit that generates a second detection signal having a correspondence with a value of the feedback current, and a control circuit that controls the feedback current. In a closed-loop operation, the control circuit controls the feedback current so that the first detection signal has a constant value. In an open-loop operation, the control circuit maintains the feedback current at a constant value.

Abstract: A magnetic field detection apparatus includes a magnetoresistive effect element and a coil. The coil includes first and second tier parts opposed to each other in a first axis direction, with the magnetoresistive dal element interposed therebetween. The coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect element in a second axis direction. The first tier part includes first conductors extending in a third axis direction, arranged in the second axis direction and coupled in parallel to each other. The second tier part includes a second conductor or second conductors extending in the third axis direction, the second conductors being arranged in the second axis direction and coupled in parallel to each other. The first conductor each have a width smaller than a width of the second conductor or each of the second conductors.

Abstract: Magnetic field sensor apparatuses are discussed. A magnetic field sensor apparatus in accordance with one example implementation in this case comprises a coil and a magnetic field sensor. A chip carrying the coil and the magnetic field sensor is arranged on a leadframe. The leadframe comprises a cutout.

Abstract: A rotation angle detection device that detects a rotation angle of a valve body. The rotation angle detection device includes a shaft, a gear, a magnetic field generator, and a magnetic detection element. The shaft is connected to the valve body. The magnetic field generator is arranged on a gear side and generates a magnetic field. The magnetic detection element is arranged on an extension of the shaft and detects magnetic flux density of the magnetic field that rotates together with the gear.

Abstract: A magnetic sensor includes an MR element. The MR element includes a free layer. The free layer has a first surface having a shape that is long in one direction and a second surface located opposite the first surface, and has a thickness that is a dimension in a direction perpendicular to the first surface. The first surface has a first edge and a second edge located at both lateral ends of the first surface. In a given cross section, the thickness at the first edge is smaller than the thickness at a predetermined point on the first surface between the first edge and the second edge.

Abstract: A magnetic field sensor arrangement for determining a signal magnetic flux in a manner which is substantially strayfield immune, comprises: a signal magnetic field source; a first and second magnetic flux concentrator forming an air gap between exterior faces of the magnetic flux concentrators; the flux concentrators being configured for guiding a signal magnetic flux to and across the air gap in a gap direction; a magnetic field sensor arranged inside the air gap, and configured for measuring a first and second signal in the gap direction and perpendicular to the gap direction; and for reducing or eliminating an magnetic disturbance field based on the first and second signal. An angle sensor arrangement. A torque sensor. A method of measuring a signal flux, an angle, a torque in a substantially strayfield immune manner.

Abstract: A wheel speed sensor includes a plurality of magnetic field detectors configured to output detection signals that correspond to magnetic field fluctuation caused by a rotation of a rotor; and an attachment member that includes an attachment portion that is to be attached to a vehicle and a holding portion that is configured to hold the plurality of magnetic field detectors, and that, in a state in which the attachment portion is attached to the vehicle, when viewed along a center axial direction of the rotor, holds the plurality of magnetic field detectors at a position that is closer to a center line, which passes centrally between an outer peripheral line that depicts the outer periphery of the rotor and an inner peripheral line that depicts the inner periphery of the rotor, than to the outer peripheral line and the inner peripheral line.

Abstract: A method of determining a gradient of a magnetic field, includes the steps of: biasing a first/second magnetic sensor with a first/second biasing signal; measuring and amplifying a first/second magnetic sensor signal; measuring a temperature and/or a stress difference; adjusting at least one of: the second biasing signal, the second amplifier gain, the amplified and digitized second sensor value using a predefined function f(T) or f(T, ??) or f(??) of the measured temperature and/or the measured differential stress before determining a difference between the first/second signal/value derived from the first/second sensor signal. A magnetic sensor device is configured for performing this method, as well as a current sensor device, and a position sensor device.

Abstract: A printed circuit board assembly may have a printed circuit board with at least one electric component. A magnetic field sensor for measuring a magnetic field may be included, where an amperage of a current conducted in the electric component is determined on the basis of the magnetic field. The assembly may also include a magnetic conductor for conducting the magnetic field, which is then measured by the magnetic field sensor.

Abstract: A magnetic sensor 1 includes: a non-magnetic substrate 10; and a sensitive element 30 disposed on the substrate 10. The sensitive element 30 has a longitudinal direction and a transverse direction and has a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element 30 is configured to sense a magnetic field by a magnetic impedance effect. The sensitive element 30 includes a soft magnetic material layer 101 made of an amorphous alloy based on Co and having a saturation magnetization of greater than or equal to 300 emu/cc and less than or equal to 650 emu/cc.

Abstract: The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.

Abstract: A downhole borehole imaging tool and methods for determining a borehole size includes a magnetoresistive system and a hub moveably coupled to a fixed tool string. The hub includes a magnet. The magnetoresistive system includes magnetoresistive sensors disposed within the fixed tool string and segregated from the magnet. During operation, a routine scan of all sensors measures, for example, the output voltage V, angle ? of magnetic field, and temperature. Measurements from each sensor may then be characterized to account for temperature and input voltages variation of the sensors. The most accurate measurement can be used to derive the position of the hub 44 using the previous baseline parameters stored in the tool.

Abstract: The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.

Abstract: A magnetic sensor device includes a first chip including a first magnetic sensor, a second chip including a second magnetic sensor and a third magnetic sensor, and a support having a reference plane. The first magnetic sensor includes at least one first magnetic detection element, and detects a first component of an external magnetic field. The second magnetic sensor includes at least one second magnetic detection element, and detects a second component of the external magnetic field. The third magnetic sensor includes at least one third magnetic detection element, and detects a third component of the external magnetic field. The first chip and the second chip are mounted on the reference plane.

Abstract: The current sensor comprises: a magnetic detecting device that is arranged in the vicinity of a conductor, to which a magnetic field to be measured induced by a current flowing through the conductor is applied, and that changes an electrical resistance in response to a change in the magnetic field to be measured; two coils that generate a canceling magnetic field to cancel the magnetic field to be measured and that are arranged in the vicinity of the magnetic detecting device; a shunt resistor, that is connected in series between the two coils, for detecting a current flowing through the coils; a first differential amplifier that amplifies the output signal of the magnetic detecting device and that supplies the current to induce the canceling magnetic field to the coils; and a second differential amplifier that amplifies the voltage across the shunt resistor and that outputs a measured voltage proportional to the current flowing through the conductor.

Abstract: According to one embodiment, a sensor includes a first element. The first element includes first and second magnetic members, an insulating member, first and second wirings, a first magnetic element, and a first conductive member. The second magnetic member is separated from the first magnetic member. The insulating member includes a first insulating region. The first insulating region is provided between the first and second magnetic members. The first wiring includes a first connecting region. The second wiring includes a second connecting region. The first magnetic element includes a first magnetic layer and a first opposed magnetic layer. The first magnetic element includes first to fifth partial regions. The first partial region is between the fourth and fifth partial regions. The second partial region is between the fourth and first partial region. The third partial region is between the first and fifth partial regions.

Abstract: A Ni-plated steel sheet includes a base steel sheet and a Ni-based coating layer that is disposed on a surface of the base steel sheet. The Ni-based coating layer includes a Fe—Ni alloy region that is formed on the surface of the base steel sheet. The Fe—Ni alloy region includes a mixed phase composed of a bcc phase and an fcc phase, and a component of the Fe—Ni alloy region includes 5 mass % or more of Fe and a remainder including 90 mass % or more of Ni.

Abstract: Magnetic recording media with a thermal spin injection layer that induces a spin injection in a magnetic recording layer in response to a thermal gradient in the thermal spin injection layer. The thermal spin injection layer may comprise an antiferromagnetic, a ferromagnetic, or a ferrimagnetic material that demonstrates a Spin Seebeck effect. In turn, when heating the magnetic recording media (e.g., with a near field transducer of a HAMR drive), the thermal gradient may be established in the thermal spin injection layer. A resulting spin torque field may assist in switching a magnetic domain in the magnetic recording layer by providing an assistive field to at least initiate switching of the magnetic domain. In turn, more reliable or efficient operation of a storage drive comprising the magnetic recording media may be realized.

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.

Abstract: At a reference position within a first plane, a magnetic field to be detected has a first direction that changes within the first plane. A magnetic sensor includes an MR element. The MR element includes a magnetic layer having first magnetization that can change in direction within a second plane. The first plane and the second plane intersect at a dihedral angle ? other than 90°. The magnetic field to be detected can be divided into an in-plane component parallel to the second plane and a perpendicular component perpendicular to the second plane. The in-plane component has a second direction that changes with a change in the first direction. The direction of the first magnetization changes with a change in the second direction. A detection value depends on the direction of the first magnetization.

Abstract: A magnetic sensor includes a magnetic field conversion unit that outputs an output magnetic field, a magnetic field detection unit that the output magnetic field can be applied, and a magnetic shield that shields external magnetic fields. The length of the magnetic field conversion unit in the third direction is greater than the length in the second direction. The magnetic shield overlaps the magnetic field conversion unit and the magnetic field detection unit. The magnetic field detection unit includes a Wheatstone bridge circuit in which a first bridge circuit including first and second magnetic field detection units and a second bridge circuit including third and fourth magnetic field detection units are connected in parallel. The first through fourth magnetic field detection units include two magnetoresistive units, and two of the magnetoresistive units have magnetoresistive effect elements that include magnetization fixed layers whose magnetization directions differ from each other.

Abstract: A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.

Abstract: Sensitivity of a magnetic sensor using the magnetic impedance effect is improved. A magnetic sensor includes: a non-magnetic substrate; a sensitive element provided on the substrate, including a soft magnetic material, having a longitudinal direction and a short direction, provided with uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect; and a protrusion part including a soft magnetic material and protruding from an end portion in the longitudinal direction of the sensitive element.

Abstract: A sensor device includes a current conductor designed to carry a measurement current, and a magnetic field sensor chip having a sensor element, wherein the magnetic field sensor chip is designed to detect a magnetic field at the location of the sensor element. The sensor device furthermore includes an encapsulation material, wherein the magnetic field sensor chip is encapsulated by the encapsulation material, and a soft magnet secured to the encapsulation material and designed to concentrate the magnetic field at the location of the sensor element. The magnetic field sensor chip and the soft magnet are galvanically isolated from one another by the encapsulation material.

Abstract: According to one embodiment, a magnetic sensor includes a base body including a base body end portion, a magnetic member, and an element part. A direction from the base body toward the magnetic member is along a first direction. The element part includes first and second magnetic elements. An orientation from the first magnetic element toward the second magnetic element is along a second direction crossing the first direction. A portion of the first magnetic element and a portion of the second magnetic element are between the base body and the magnetic member. A position in a third direction of an other portion of the first magnetic element and a position in the third direction of an other portion of the second magnetic element are between a position in the third direction of the base body end portion and a position in the third direction of the magnetic member.

Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.

Abstract: Anisotropic-magnetoresistive (AMR) sensors are described. The AMR sensors have a barber pole structure with multiple constant width sections of different width. In some embodiments, two sections of greater, constant width are positioned at ends of the AMR sensor, with a section of smaller width positioned in between. The sections of greater width may have a total length less than the section of smaller width. The structures described may provide enhanced linearity.

Abstract: The sensitivity of a magnetic sensor using a sensitive element sensing a magnetic field by the magnetic impedance effect is increased. The magnetic sensor includes: a sensitive element sensing a magnetic field by a magnetic impedance effect; and a focusing member provided to face the sensitive element, configured with a soft magnetic material, and focusing magnetic force lines from outside onto the sensitive element.

Abstract: A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.

Abstract: Systems and methods for eliminating or mitigating T-effects on Hall sensors. A system may comprise a magnet-coil arrangement for providing a relative movement therebetween to obtain a relative position, a Hall sensor for sensing the relative movement, a temperature sensor located in proximity of the Hall sensor for providing temperature sensing, and a controller having two or more channels coupled to Hall sensor and to the temperature sensor and configured to control the relative movement and to provide, based on the temperature sensing, a temperature correction input to the Hall sensor for compensating a temperature effect on the Hall sensor sensing.

Abstract: It is aimed at improving sensitivity of a magnetic sensor using the magnetic impedance effect. A magnetic sensor includes: a non-magnetic substrate; and a sensitive element including a soft magnetic material layer composed of an amorphous alloy with an initial magnetic permeability of 5,000 or more, the soft magnetic material layer being provided on the substrate, having a longitudinal direction and a short direction, being provided with uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a magnetic field by a magnetic impedance effect.

Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

Abstract: A magnetic sensor includes a substrate having a first surface and a second surface, which is opposite the first surface, and a detection unit provided on the first surface. The detection unit includes a magnetoresistive effect element, the resistance value of which changes in accordance with an input magnetic field, provided on the first surface, and a protective layer that covers at least the magnetoresistive effect element. The magnetoresistive effect element is configured in a linear shape extending in a first direction on the first surface. The detection unit has a first width, which is a length in a second direction, orthogonal to the first direction, and a second length, which is greater than the first width. The first width is the length of the detection unit on the first surface, and the second width is the length of the top surface of the detection unit.

Abstract: A method of determining a high voltage value without measuring the high voltage value directly, in varying possible temperatures. An apparatus includes two voltage divider circuits (108, 110; 109, 111), wherein the second circuit (i.e. a reference circuit 109, 111) is provided with a smaller reference input voltage (102). The transfer ratio can be obtained from the reference circuit (109, 111) through voltage measurements, and deduced into a transfer ratio of another circuit (108, 110), no matter the ambient temperature value. When measuring a divided voltage value (103) of one circuit (108, 110), the desired high voltage value (101) can be calculated, no matter what the ambient temperature is.

Abstract: A magnetic sensor includes a magnetic field converter, a magnetic field detector, and a plurality of shields aligned in a Y direction. The magnetic field converter includes a plurality of yokes. Each yoke has a shape elongated in the Y direction, and is configured to receive an input magnetic field component in a direction parallel to a Z direction and to output an output magnetic field component in a direction parallel to an X direction. The magnetic field detector includes a plurality of trains of elements. Each train of elements includes a plurality of MR elements that are aligned in the Y direction along one yoke and connected in series. Each shield has such a shape that its maximum dimension in the Y direction is smaller than its maximum dimension in the X direction.

Abstract: A magnetic sensor device includes a first detection circuit that generates a first detection signal, a coil through which a feedback current is passed to generate a cancellation magnetic field, a second detection circuit that generates a second detection signal having a correspondence with a value of the feedback current, and a control circuit that controls the feedback current. In a closed-loop operation, the control circuit controls the feedback current so that the first detection signal has a constant value. In an open-loop operation, the control circuit maintains the feedback current at a constant value.

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Abstract: A magnetic field sensor array includes a plurality of sensor segments, each including a plurality of magnetic field sensors. A magnetizing current conductor is situated so as to run in the area of the magnetic field sensors in such a way that elements of the magnetic field sensors may be magnetized. A plurality of parallel-connected half-bridges, each including a high switch pJ and a low switch nJ, each include a center tap connection situated between the switches. The magnetizing current conductor is connected to each center tap connection, by means of which the magnetizing current conductor is divided into separately activatable magnetizing segments. Elements of a sensor segment are magnetized in that two switches nJ and pJ+1 having different electrical potentials, or alternatively pJ and nJ+1, of two directly adjacent half-bridges are closed simultaneously. At least one further switch nX<J or pY>J+1 or alternatively pX<J or nY>J+1 is closed.

Abstract: A system for measuring an angular position of a rotor with respect to a stator, wherein the rotor is rotatable around a rotation axis, and the system includes: a magnetic source mounted on the rotor, having at least four magnet poles and providing a periodically repetitive magnetic field pattern with respect to the rotation axis; a sensor mounted on the stator and comprising a plurality of sensor elements for measuring at least one magnetic field component of the magnetic field and for providing a measurement signal thereof; the sensor being located substantially centered around the rotation axis, in a plane substantially perpendicular to the rotation axis at a first distance from the magnetic source; the sensor elements being located substantially on a circle at a second distance from the rotation axis; a calculator that determines the angular position by calculating it from the measurement signals.

Abstract: A magnetic sensor includes a first resistor having a first resistance and a first correction resistor having a second resistance. The first resistor and the first correction resistor are connected in series. The first resistor is configured so that the first resistance changes periodically as strength of a magnetic field component changes periodically. The first correction resistor is configured so that a change in a sum of the first resistance and the second resistance due to a noise magnetic field is smaller than a change in the first resistance due to the noise magnetic field.

Abstract: A method of determining a gradient of a magnetic field, includes the steps of: biasing a first/second magnetic sensor with a first/second biasing signal; measuring and amplifying a first/second magnetic sensor signal; measuring a temperature and/or a stress difference; adjusting at least one of: the second biasing signal, the second amplifier gain, the amplified and digitized second sensor value using a predefined function f(T) or f(T, ??) or f(??) of the measured temperature and/or the measured differential stress before determining a difference between the first/second signal/value derived from the first/second sensor signal. A magnetic sensor device is configured for performing this method, as well as a current sensor device, and a position sensor device.

Abstract: A magnetic field detection apparatus includes a magnetoresistive effect element and a helical coil. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction. The helical coil includes a parallel connection including first and second parts extending in a second axis direction inclined with respect to the first axis direction. The first and second parts are adjacent to each other in a third axis direction and coupled to each other in parallel. The helical coil is wound around the magnetoresistive effect element while extending along the third axis direction. The magnetoresistive effect film overlaps the first and second parts in a fourth axis direction orthogonal to the second and third axis directions. The helical coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in the third axis direction.

Abstract: Three bridge circuits (101, 111, 121), each include magnetoresistive sensors coupled as a Wheatstone bridge (100) to sense a magnetic field (160) in three orthogonal directions (110, 120, 130) that are set with a single pinning material deposition and bulk wafer setting procedure. One of the three bridge circuits (121) includes a first magnetoresistive sensor (141) comprising a first sensing element (122) disposed on a pinned layer (126), the first sensing element (122) having first and second edges and first and second sides, and a first flux guide (132) disposed non-parallel to the first side of the substrate and having an end that is proximate to the first edge and on the first side of the first sensing element (122). An optional second flux guide (136) may be disposed non-parallel to the first side of the substrate and having an end that is proximate to the second edge and the second side of the first sensing element (122).