Abstract: An angle sensor includes a plurality of composite magnetic field information generation units and an angle computing unit. The plurality of composite magnetic field information generation units detect, at a plurality of detection positions, a composite magnetic field of a magnetic field to be detected and a noise magnetic field other than the magnetic field to be detected, and thereby generate a plurality of pieces of composite magnetic field information including information on the direction of the composite magnetic field. The angle computing unit generates a detected angle value by performing an operation using the plurality of pieces of composite magnetic field information so that an error of the detected angle value caused by the noise magnetic field is made smaller than in the case where the detected angle value is generated on the basis of any and only one of the plurality of pieces of composite magnetic field information.

Abstract: A permanent magnet includes at least two antiferromagnetic layers and at least two first ferromagnetic layers. A magnetization direction of each first ferromagnetic layer is set, by an exchange coupling, with one of the antiferromagnetic layers of the stack, parallel to and in the same direction as the magnetization directions of the other first ferromagnetic layers. The permanent magnet also includes at least one second ferromagnetic layer. A magnetization direction of each second ferromagnetic layer is pinned only by RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling with at least one of the first ferromagnetic layers or with at least one other of the second ferromagnetic layers.

Abstract: A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.

Abstract: A current sensor can indirectly measure a sensed current by directly measuring static perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic fields generated by perturbing coils. The sensed current can be indirectly measured by modulating or changing sensitivities of the magnetoresistance elements in a way that is directly related to the sensed current.

Abstract: (Subject) To provide a differential magnetic sensor capable of accurate magnetic detection of a local weak magnetic field even when there is a difference in detection sensitivity of a plurality of magnetic sensors used as a differential type magnetic sensor.

Abstract: An electric current detection device includes magnetism detector elements for detecting a strength of a magnetic field generated by an electric current flowing through an electric current path, a detection circuit for detecting a magnitude of an electric current flowing through the electric current path based on an output of the magnetism detector elements, and plural wires that are connected to the magnetism detector elements and extend in a direction away from the electric current path. The magnetism detector elements are arranged such that a direction of a magneto-sensitive axis thereof lies on a first plane parallel to a current-carrying direction of the electric current path and parallel to an extending direction of the plurality of wires. The plural wires are arranged on a same plane of a second plane orthogonal to the first plane.

Abstract: An XMR angle sensor arrangement with a safety mechanism comprises an XMR angle sensor having a sensing area for sensing an in-plane magnetic field and for outputting a sensor signal based on the in-plane magnetic field component sensed in the sensing area; a permanent magnet, which is rotatably arranged with respect to the XMR angle sensor to generate a first in-plane magnetic field component in the sensing area of the XMR angle sensor; an excitation current rail path, which is arranged proximate to the sensing area of the XMR angle sensor; and an excitation current provider configured to provide the excitation current rail path with an excitation signal having a excitation signal strength, wherein the excitation signal strength of the excitation signal is chosen to generate a second in-plane magnetic field component in the sensing area of the XMR angle sensor which results, due to a super position of the first and second in-plane magnetic field components, in an expected change of the direction of the result

Abstract: In an embodiment, a current difference sensor includes first and second conductors arranged relative to one another such that when a first current flows through the first conductor and a second current, equal to the first current, flows through the second conductor, a first magnetic field induced in the first conductor and a second magnetic field induced in the second conductor cancel each other at first and second positions; first and second magnetic field sensing elements are arranged at the first and second positions, respectively, and have a first sensitivity to the first and second currents; third and fourth magnetic field sensing elements are arranged at other positions, and have a second sensitivity to the first and second currents; and the first sensitivity is less than the second sensitivity such that the first and second magnetic field sensing elements and not the third and fourth magnetic sensing elements are selected.

Abstract: A magnetic field detection device includes a Z-direction detection unit with magnetoresistive elements provided on inclined side surfaces of Z-direction detection recesses; an X-direction detection unit includes magnetoresistive elements provided on inclined side surfaces of X-direction detection recesses and a Y-detection unit includes magnetoresistive elements provided on inclined side surfaces of Y-direction detection recesses, each of the detection units having a bridge circuit comprising two element lines connected in parallel, each element line comprising two of the magnetoresistive elements connected in series.

Abstract: A method of determining a position of a sensor device relative to an external magnetic field, comprises: providing currents to conductors to generate an internal magnetic field that will superimpose with the external magnetic field, measuring field components of the combined magnetic field, calculating a position based on the applied currents and/or on the measured residual magnetic field. A position sensor is provided for performing the method.

Abstract: An interdigitated Y-axis magnetoresistive sensor, comprising a substrate, and located on the substrate is a first comb-shaped soft ferromagnetic flux guide, a second comb-shaped soft ferromagnetic flux guide, and a push-pull magnetoresistive bridge sensing unit. It also may include a calibration and/or an initialization coil. The first and the second comb-shaped soft ferromagnetic flux guides are formed into an interdigitated shape. The gaps between a second comb tooth and two adjacent the first comb teeth are the first gap and the second gap. Furthermore, a pair of gaps are formed between the second come tooth and the base of the first comb as well as between the first comb tooth and the second comb tooth base. A push magnetoresistive unit string and a pull magnetoresistive unit string are alternately placed in the first gap and the second gap, respectively. The resulting magnetoresistive sensing unit senses the magnetic field along the X-axis.

Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Abstract: A single-chip high-magnetic-field X-axis linear magnetoresistive sensor with a calibration and an initialization coil, comprising a high magnetic field single-chip referenced bridge X-axis magnetoresistive sensor, a calibration coil, and an initialization coil, wherein the calibration coils are planar coils, and the initialization coils are planar or three-dimensional coils. The planar calibration coils and the planar initialization coils can be placed above a substrate and below the magnetoresistive sensor units, between the magnetoresistive sensor units and the soft ferromagnetic flux guides, above the soft ferromagnetic flux guides, or at gaps between the soft ferromagnetic flux guides. The three-dimensional initialization coil is wound around the soft ferromagnetic flux guides and magnetoresistive sensor units.

Abstract: An antenna according to one exemplary aspect of the present invention includes an antenna element and a reflector conductor that is arranged to be spaced apart from the antenna element. The antenna element includes a first split-ring conductor having such a shape that a part of a ring is cut by a split part, a first connection conductor having one end that is electrically connected to the first split-ring conductor and another end that is electrically connected to the reflector conductor, and a feed line conductor having one end that is electrically connected to the first split-ring conductor. The feed line conductor spans an opening that is formed inside the first split-ring conductor and overlaps an area surrounded by an outer edge of the first connection conductor.

Abstract: An observed operational state can include an operational state of one or more system devices. A sensor can emit, in response to a detected observable condition reflective of a given operational state, a simulated signal reflective of a different operational state as a proxy for the detected condition. A controller receiving such a proxy signal can, at least partially responsively to the proxy signal, issue a command corresponding to the given operational state. An electro-mechanical actuator can be selectively activatable responsive to the command.

Abstract: Provided is a displacement detection device which reduces the influence of disturbance noise on a magnetic field to be detected and makes a range detectable by a monopole magnet wider than a pitch of a magnetic detection elements. A displacement detection device includes a magnet which is displaced in a displacement direction Ds, is rod-shaped and has a form in which a longitudinal direction and the displacement direction Ds form a predetermined angle ?, and a sensor IC in which magnetic detection element groups, which detect a magnetic flux density of a magnetic field formed by the magnet in an x direction and a z direction orthogonal to the displacement direction Ds, are arranged in pairs with a predetermined interval dp, and which outputs a difference between outputs of the magnetic detection element groups.

Abstract: A magnetic sensor for detecting a component of an external magnetic field in a specific direction includes a resistor array including a plurality of resistive element sections each having a magnetoresistance element. Each of the plurality of resistive element sections has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction.

Abstract: A magnetic field sensing apparatus including a plurality of first magnetoresistance units, a plurality of second magnetoresistance units, and a magnetic field sensing device is provided. Magnetic field sensing axes of the first and second magnetoresistance units are parallel to a first direction and a second direction respectively, and the first and second magnetoresistance units are disposed beside the magnetic field sensing device, which is configured to measure a magnetic field component in a third direction. The first and second magnetoresistance units are electrically connected to form at least one kind of Wheatstone full bridge in two different time periods to respectively measure magnetic field components in fourth and fifth directions and to cause this kind of Wheatstone full bridge to output two signals respectively corresponding to the magnetic field components in the fourth and fifth directions. The first direction to the fifth direction are different from each other.

Abstract: An AMR-type integrated magnetoresistive sensor sensitive to perpendicular magnetic fields is formed on a body of semiconductor material covered by an insulating region. The insulating region houses a set/reset coil and a magnetoresistor arranged on the set/reset coil. The magnetoresistor is formed by a magnetoresistive strip of an elongated shape parallel to the preferential magnetization direction. A concentrator of ferromagnetic material is arranged on top of the insulating region as the last element of the sensor and is formed by a plurality of distinct ferromagnetic regions aligned parallel to the preferential magnetization direction.

Abstract: A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor. The TMR field sensor includes a first bridge circuit including multiple TMR elements to sense a magnetic field and a second circuit to apply a bipolar current pulse adjacent to each TMR element. The current lines are serially or sequentially connected to a current source to receive the bipolar current pulse. The field sensor has an output comprising a high output and a low output in response to the bipolar pulse. This asymmetric response allows a chopping technique for 1/f noise reduction in the field sensor.

Abstract: A power detection device for a facility monitoring system provides non-contact power detection in a power supply line for determining a powered up or energized state of equipment connected to the power supply line. The power detection device is adapted to be disposed in communication with a live power supply line without disconnecting or interrupting the power supply to the powered equipment. A hinged casing including a sensor circuit for detecting electrical current is frictionally engaged to the power supply line by closing the hinge and drawing opposed sides of the casing together. Sensor signals are aggregated and amplified such that an amplified signal above a threshold is indicative of a current flow sufficient to power the equipment and render a determination of an energized, or “equipment on” state. Conversely, the lack of a threshold signal indicates inactive equipment such that remedial measures may be commenced.

Abstract: A position sensor and method for determining an axial and/or an angular position of a setting stem of a timepiece. A magnet is provided on the setting stem, and at least one magnetic field sensor is configured to detect changes in magnetic field strength along at least a first axis and a second axis as the rotatable element rotates; the second axis is not parallel to the first axis. The changing magnetic field sensed by the magnetic sensor is converted into a characteristic signature path which may then be mapped onto a circular signature path in two dimensions to derive the angular position of the setting stem.

Abstract: The present invention provides an information processing apparatus and a method of deciding a correction amount for correcting the radio field intensity of received radio waves in the information processing apparatus. The information processing apparatus receives a BLE (Bluetooth Low Energy) packet transmitted by an external apparatus, and displays a screen for deciding a correction amount for correcting the radio field intensity of the BLE packet. If a user inputs an instruction for deciding the correction amount via this screen, the correction amount is decided based on the radio field intensity of the received BLE packet and a reference value.

Abstract: A single chip Z-axis linear magnetoresistive sensor with a calibration/initialization coil comprises a single chip Z-axis linear magnetoresistive sensor, and a calibration coil and/or an initialization coil. The calibration coil and the initialization coil are planar coils or three-dimensional coils. The planar coils are located above a substrate and below a magnetoresistive sensing unit, between a magnetoresistive sensing unit and a soft ferromagnetic flux concentrator, above a soft ferromagnetic flux concentrator, or in a gap of the soft ferromagnetic flux concentrator. The three-dimensional coil is wound around the soft ferromagnetic flux concentrator and the magnetoresistive sensing unit.

Abstract: Control of electrical conductivity is provided via electrically conductive magnetic domain walls between magnetic domains. The magnetic domains are identical except for their magnetic configuration. Altering a configuration of the magnetic domains (e.g., by thermal treatment, application of a magnetic field, etc.) can alter the electrical resistance of a device. Such devices can be used as non-volatile information storage devices or as sensors.

Abstract: A magnetic sensor of a sensor unit includes magnetic sensing elements, an encapsulating portion, a primary terminal group and a secondary terminal group. Another magnetic sensor includes magnetic sensing elements, an encapsulating portion, a primary terminal group and a secondary terminal group. The magnetic sensors are mounted on a common surface of a circuit board. The adjacent two magnetic sensors, which are oriented in a common direction, are arranged such that the secondary terminal group of one of the adjacent two magnetic sensors is opposed to the primary terminal group of the other one of the adjacent two magnetic sensors. A primary output terminal and a secondary output terminal are placed asymmetrically to each other with respect to a center line of the encapsulating portion.

Abstract: The present invention provides a detecting head device for capacitively measuring an acupuncture point frequency of a human body, comprising: an internal oscillator, which generates a predetermined oscillation frequency; an electronic counter, which is connected to the internal oscillator and calculates an internal oscillation frequency; and an external interrupt security routine (ISR), which is connected to the counting module and calculates, in combination with the internal oscillation frequency, a frequency F2 of the contacted acupuncture point of the human body.

Abstract: A magnetometric sensor comprises a magnetoresistance effect element having a sensitivity axis in a specific direction; including a fixed magnetic layer, a nonmagnetic material layer, and a free magnetic layer stacked in this order on a substrate; and including a first antiferromagnetic layer on the free magnetic layer on the opposite side to the side facing the nonmagnetic material layer to cause an exchange coupling bias between the first antiferromagnetic layer and the free magnetic layer and align the magnetization direction of the free magnetic layer in a prescribed direction in a state of permitting variation in magnetization. The free magnetic layer includes a first free magnetic sub-layer, a misfit-reducing sub-layer for decreasing the lattice mismatch of the free magnetic layer with the first antiferromagnetic layer, and a second free magnetic sub-layer ferromagnetically coupled to the first free magnetic sub-layer in this order from the first antiferromagnetic layer side.

Abstract: Two magnetic field sensors, ratiometric with respect to their common supply and featuring matched thermal coefficients, are inserted in the two airgaps of a magnetic circuit arranged so that said airgaps appear in series with respect to the magnetic flux generated by the current to be measured, while appearing in parallel with respect to the reference flux generated by a stable permanent magnet. The output signal of one of the sensors is thus proportional to the sum of said fluxes, the other to their difference. Adding and subtracting said signals produces two outputs, one proportional solely to the current to be measured, and the other solely to the reference flux. A feedback loop acts on the common supply of the two sensors in order to hold constant the output proportional to the reference flux, thus producing the effect that drifts with temperature of the magnetic sensitivities are intrinsically compensated for.

Abstract: A magnetic field sensing apparatus and a detection method thereof are provided. The magnetic field sensing apparatus includes first and second AMR resistors, a current generator, and an arithmetic device. A magnetized direction of the first AMR resistor is set as a first direction. A magnetized direction of the second AMR resistor is set as a second direction opposite to or the same as the first direction. The current generator provides a current in a direction parallel to the first direction to flow through the first and second AMR resistors. The arithmetic device obtains a first detection voltage according to a voltage difference between two terminals of the first AMR resistor, obtains a second detection voltage according to a voltage difference between two terminals of the second AMR resistor, and performs his an arithmetic operation on the first and second detection voltages to obtain a first magnetic field detection result.

Abstract: Methods and apparatus for detecting a magnetic field include a semiconductor substrate, a coil configured to provide a changing magnetic field in response to a changing current in the coil; and a magnetic field sensing element supported by the substrate. The coil receives the changing current and, in response, generates a changing magnetic field. The magnetic field sensing element detects the presence of a magnetic target by detecting changes to the magnetic field caused by the target and comparing them to an expected value.

Abstract: A detector for detecting an occurrence of a current strength of interest of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.

Abstract: A vehicle sensor may indicate heading angle. A plurality of seating zones may each include an orientation sensor indicating seating angle. A component within one of the seating zones may provide interface information descriptive of commands and associated air gestures oriented to the one seating zone, and perform one of the commands responsive to a personal device detecting the corresponding air gesture, accounting for the heading angle and seating angle. Gesture input from a personal device may be adjusted to create acceleration data in a reference frame of an in-vehicle component in a seating zone using orientation of the device, vehicle heading relative to magnetic North, and orientation angle for the seating zone including the device. When the acceleration data matches an air gesture in a library of air gestures, a command may be sent to the component corresponding to the matching air gesture.

Abstract: A device, an arrangement, and a method for measuring a current intensity in a primary conductor through which current flows are disclosed. In an embodiment, an apparatus includes a magnetic field-generating element configured to generate a reference magnetic field; and a magnetic field angle-sensitive element configured to measure an orientation of a total magnetic field, the total magnetic field is produced by overlapping of the primary magnetic field and the reference magnetic field in space, wherein the primary magnetic field and the reference magnetic field are not parallel to one another at a location of the magnetic field angle-sensitive element, and wherein the current intensity of the current flowing through the primary conductor is determinable from the orientation of the total magnetic field in space.

Abstract: An electric current sensor includes a primary conductor through which an electric current to be measured flows, and at least one magnetic sensor. The magnetic sensor includes a first magnetic sensor area, the output sensitivity of which is decreased when a magnetic field is applied to include a magnetic field component in a first direction along a sensitivity variation axis, and a second magnetic sensor area, the output sensitivity of which is increased when the magnetic field is applied to include a magnetic field component in a second direction that is opposite to the first direction.

Abstract: A magnetic field sensing apparatus including a substrate, first, second, and third magnetic field sensing units, and a switching circuit is provided. The substrate has a surface, and has a first inclined surface and a second inclined surface. The first magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone full bridge and disposed on the surface. The second magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the first inclined surface. The third magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the second inclined surface. The switching circuit electrically connects the second magnetic field sensing unit and the third magnetic field sensing unit. A magnetic field sensing module is also provided.

Abstract: Methods for forming an efficient and effective crossed-fins FinFET device for sensing and measuring magnetic fields and resulting devices are disclosed. Embodiments include forming first-fins, parallel to and spaced from each other, in a first direction on a substrate; forming second-fins, parallel to and spaced from each other on the substrate, in a same plane as the first fins and in a second direction perpendicular to and crossing the first-fins; forming a dummy gate with a spacer on each side over channel areas of the first and second fins; forming source/drain (S/D) regions at opposite ends of each first and second fin; forming an ILD over the fins and the dummy gate and planarizing to reveal the dummy gate; removing the dummy gate, forming a cavity; and forming a high-k/metal gate in the cavity.

Abstract: A magnetic sensor includes: a magnetoresistive effect element having a sensitivity axis in a specific direction in which a fixed magnetic layer, a nonmagnetic material layer, and a free magnetic layer are laminated in this order; an antiferromagnetic layer which generates an exchange coupling bias with the free magnetic layer and which aligns the magnetization direction thereof in a predetermined direction provided on the free magnetic layer; and a ferromagnetic layer which generates an exchange coupling bias with the antiferromagnetic layer and which aligns the magnetization direction thereof in a predetermined direction provided on the antiferromagnetic layer. The magnetization direction on the exchange coupling bias in the free magnetic layer is the same direction as that on the exchange coupling bias in the ferromagnetic layer, and the ferromagnetic layer is able to impart a reflux magnetic field having a component along a sensitivity axis to the free magnetic layer.

Abstract: A magnetic sensor includes a substrate, magnetoresistive effect elements arranged on a surface of the substrate, a first wiring line arranged on a surface of the substrate, an insulation layer configured to cover the magnetoresistive effect elements and the first wiring line, a soft magnetic body arranged on the insulation layer, and a second wiring line arranged on the insulation layer, wherein the magnetoresistive effect elements each extend in a first direction and are arranged while being separated from each other in a second direction orthogonal to the first direction in a case of viewing in plan the substrate, the soft magnetic body includes a first direction extension portion that extends in the first direction, and when viewed in plan, the first direction extension portion is arranged between the magnetoresistive effect elements, and the second wiring line is connected to the first wiring line.

Abstract: A sensor apparatus having at least one magnet core, on at least one carrier surface, which encompasses at least one soft magnetic material and for which a respective longitudinal center plane, which is oriented perpendicularly to the carrier surface and divides the respective magnet core into two halves having an identical mass, is definable, at least one coil being on, around, and/or adjacent to the at least one magnet core, the at least one magnet core having in its interior sub-regions by which an initiation of a magnetization reversal of the respective magnet core is targetedly locally controllable since a drive energy to be applied for propagation of a magnetic domain wall is elevated. Also described is a manufacturing method for a sensor apparatus having at least one magnet core, and a method for ascertaining a field strength of a magnetic field in at least one spatial direction.

Abstract: A magnetic sensor includes an MR element and two bias magnetic field generation units. The two bias magnetic field generation units are spaced apart from each other along a first direction and configured to cooperate with each other to generate a bias magnetic field. Each bias magnetic field generation unit includes a ferromagnetic layer and an antiferromagnetic layer stacked along a second direction orthogonal to the first direction. An element placement region is formed between the two bias magnetic field generation units when viewed in the second direction in an imaginary plane perpendicular to the second direction and intersecting the MR element. The element placement region includes a middle region and two end regions. The MR element is placed to lie within the middle region in the imaginary plane.

Abstract: A magnetic sensor is provided in which in a case where magnetization amounts of the first ferromagnetic layer and the second ferromagnetic layer in the first magnetic sensor element are respectively set to be Mst11 and Mst12 and magnetization amounts of the first ferromagnetic layer and the second ferromagnetic layer in the second magnetic sensor element are respectively set to be Mst21 and Mst22, in a case of Mst11>Mst12, a relationship of Mst21>Mst22 is satisfied, and in a case of Mst11<Mst12, a relationship of Mst21<Mst22 is satisfied.

Abstract: Each of a plurality of first magnetoresistive elements includes a double spiral pattern in plan view. The double spiral pattern includes a first spiral pattern, a second spiral pattern, and an S-shaped or inverted S-shaped pattern that joins the first spiral pattern and the second spiral pattern at a center portion of the double spiral pattern. Orientations of the double spiral patterns of the plurality of first magnetoresistive elements are different from each other in a circumferential direction, and orientations of the S-shaped or inverted S-shaped patterns differ from each other in the circumferential direction.

Abstract: An example embodiment of the invention is a method and device for detecting foreign objects (FO) near the primary coil of an induction charger used in charging electric vehicle batteries. Individual sensors of a sensor array are configured to output a sensing signal in response to magnetically coupling the high frequency alternating magnetic field produced by the primary coil. A disable signal line is configured to disable the power source when a controller determines from scanned sensor signals, that a FO is present. An alarm can be activated by the microprocessor to alert the user to the presence of a FO on or near the primary coil. In this manner, damage can be avoided that could otherwise be caused from the presence of a FO near the primary coil. Moreover, a more efficient charging operation can be achieved by avoiding dissipating energy by heating a FO.

Abstract: Offsets (short and long term) are significantly reduced in a Lorentz force magnetometer circuit. A modulated bias current supplied to the magnetometer is chopped by periodically switching its polarity. Magnetometer output is demodulated, then de-chopping performed to restore signal polarity output. Chopping of the bias current signal polarity modulates magnetic field signal to a frequency in which electrostatic force remains constant toward eliminating offset and long-term drift from said micromechanical resonator.

Abstract: A measuring system for determining the specific electrical conductivity of a medium in a vessel, comprising an inductive conductivity sensor with at least one transmitter coil that emits an input signal into the medium and a receiver coil connected to the transmitter coil via the medium that delivers the output signal, a temperature sensor for measuring the temperature of the medium, and a data processing unit that determines the conductivity of the medium using the input signal, the output signal, and the temperature provided. The system is characterized by the fact that the conductivity sensor and the temperature sensor are designed as non-invasive sensors.

Abstract: A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.

Abstract: A device for determining an electrical power parameter of an adjacent electrical wire includes a magnetometer, a display, and a processor. The magnetometer is configured to monitor a magnetic field and to provide an output that is indicative of a magnetic field strength. The processor is in communication with the magnetometer and the display, and is configured to: receive the output from the magnetometer; determine an electrical power parameter from the received output; and provide a visual indication of the determined electrical power parameter via the display.

Abstract: The present invention provides a push-pull bridge-type magnetic sensor for high-intensity magnetic fields. The sensor comprises two substrates, magnetoresistive sensing elements, push arm attenuators, and pull arm attenuators. Magnetization directions of pinning layers of the magnetoresistive sensing elements located on a same substrate are parallel, and magnetization directions of pinning layers of the magnetoresistive sensing elements on different substrates are anti-parallel, wherein the magnetoresistive sensing elements on one substrate are electrically connected to one another to form push arms of a push-pull bridge, and the magnetoresistive sensing elements on the other substrate are electrically connected to one another to form pull arms of the push-pull bridge. The magnetoresistive sensing elements in the push arms and the pull arms are arranged in columns above or below the push arm attenuators and the pull arm attenuators.

Abstract: A sensor arrangement is provided. The sensor arrangement may include at least one sensor element having a first side and a second side opposite the first side and configured for sensing a magnetic field; and an electrically conductive line, wherein a first portion of the electrically conductive line may be arranged on the first side of the at least one sensor element and a second portion of the electrically conductive line may be arranged on the second side of the at least one sensor element in such a way that if a current is flowing through the electrically conductive line, the current has a first direction in the first portion and a second direction opposite the first direction in the second portion, such that a first magnetic field formed by the current in the first portion and a second magnetic field formed by the current in the second portion may at least partly add constructively at a sensing portion of the at least one sensor element.