Abstract: A structure and method are provided for self-test of a Z axis sensor. Two self-test current lines are symmetrically positioned adjacent, but equidistant from, each sense element. The vertical component of the magnetic field created from a current in the self-test lines is additive in a flux guide positioned adjacent, and orthogonal to, the sense element; however, the components of the magnetic fields in the plane of the sense element created by each of the two self-test current line pairs cancel one another at the sense element center, resulting in only the Z axis magnetic field being sensed during the self-test.

Abstract: The semiconductor storage device includes a memory cell array region in which a plurality of storing MTJ elements capable of changing resistance depending on a direction of magnetization are arranged on a semiconductor substrate. The semiconductor storage device includes a resistive element region in which a plurality of resisting MTJ elements are arranged on the semiconductor substrate along a first direction and a second direction perpendicular to the first direction. An area of a first cross section of the resisting MTJ element parallel with an upper surface of the semiconductor substrate is larger than an area of a second cross section of the storing MTJ element parallel with the upper surface of the semiconductor substrate.

Abstract: A microfabricated magnetic field transducer uses a magnetically sensitive structure in combination with one or more permeable magnetic flux guides. The flux guides may route off-axis components of an externally applied magnetic field across the sensitive axis of the magnetically sensitive structure, or may shield the magnetically sensitive structure from off-axis, stray fields or noise sources. A combination of flux guides and magnetically sensitive structures arranged on a single substrate may enable an integrated, 3-axis magnetometer in a single package, greatly improving cost and performance.

Abstract: A magnetoresistive sensing device is provided. A first sensed magnetic-field component in parallel with the x-axis and a second sensed magnetic-field component in parallel with the y-axis of an external magnetic field forming a first inclination angle with the x-axis and a second inclination angle with the y-axis are determined. A virtual plane is defined so as to render a magnetic-field component perpendicular to the virtual plane of the external magnetic field is essentially zero. The first inclination angle and the second inclination angle are adjusted with reference to the virtual plane. An x-axis magnetic-field component in parallel with the x-axis, a y-axis magnetic-field component in parallel with the y-axis and a z-axis magnetic-field component in parallel with the z-axis of the external magnetic field are estimated according to the adjusted first inclination angle, the adjusted second inclination angle, the first sensed magnetic-field component and the second sensed magnetic-field component.

Abstract: Some embodiments provide a system that generates a coil switching signal for a brushless DC motor. During operation, the system determines a magnetic field of the brushless DC motor at a first time and a magnetic field of the brushless DC motor at a second time. Then, the coil switching signal is generated based on a relationship between the magnetic field determined at the first time and a first predetermined threshold, and the magnetic field determined at the second time and a second predetermined threshold.

Abstract: A method for altering an impedance of a conductive pathway on a microelectronic package includes applying a magnetic field to the conductive pathway. The microelectronic package may be, for example, a printed circuit board. The method also includes controlling a magnitude of the magnetic field at the conductive pathway for altering the impedance of the conductive pathway. The magnetic field may be applied by, for example, an electromagnet or a permanent magnet. A magnetic field may also be applied for simulating crosstalk effects on a conductive pathway.

Abstract: A magnetic sensor includes an MR element and a pair of magnets. The MR element includes a magnetization pinned layer having a magnetization pinned in a direction parallel to an X direction, a free layer having a magnetization that varies depending on an X-direction component of an external magnetic field, and a nonmagnetic layer interposed between the magnetization pinned layer and the free layer. The magnetization pinned layer, the nonmagnetic layer and the free layer are stacked to be adjacent in a Y direction. The free layer receives an interlayer coupling magnetic field in a direction parallel to the X direction resulting from the magnetization pinned layer. The pair of magnets applies a bias magnetic field to the free layer. The bias magnetic field includes a first component in a direction opposite to that of the interlayer coupling magnetic field and a second component in a Z direction.

Abstract: A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.

Abstract: The invention is related to a magnetic substance detection device for detecting a magnetic substance, including: a magnetoresistive sensor arranged in the middle of a movement path of the magnetic substance; and a lower magnet in which a south pole and a north pole are arrayed along the movement direction of the magnetic substance; and a upper magnet in which a north pole and a south pole are arrayed along the movement direction of the magnetic substance. The lower and upper magnets are arranged with the movement path of the magnetic substance interposed so that the south pole of the lower magnet and the north pole of the upper magnet are opposed to each other, and the north pole of the lower magnet and the south pole of the upper magnet are opposed to each other, whereby the magnetic substance can be detected with high accuracy.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: A current sensor includes a substrate, a conductive body being provided above the substrate and extending in one direction, and magnetoresistance effect elements being provided between the substrate and the conductive body and outputting output signals owing to an induction magnetic field from a current to be measured being conducted through the conductive body, wherein each of the magnetoresistance effect elements has a laminated structure including a ferromagnetic fixed layer whose magnetization direction is fixed, a non-magnetic intermediate layer, and a free magnetic layer whose magnetization direction fluctuates with respect to an external magnetic field, the ferromagnetic fixed layer is a self-pinned type formed by antiferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film through an antiparallel coupling film, the Curie temperatures of the first ferromagnetic film and the second ferromagnetic film are approximately equal, and a difference between the magnetization amounts

Abstract: A current sensor includes a first magnetic sensor and a second magnetic sensor which are configured to detect an induced magnetic field from target current to be measured flowing through a current line. The first and second magnetic sensors each include a magnetoresistive element that includes a free magnetic layer and a hard bias layer applying a bias magnetic field to the free magnetic layer. The bias magnetic field in the magnetoresistive element of the first magnetic sensor is oriented opposite to the bias magnetic field in the magnetoresistive element of the second magnetic sensor.

Abstract: A transducer is disclosed for detecting the AC and DC voltage difference between two nodes in an electrical circuit and electronically transmitting the measured voltage difference to an electrical system that is electrically isolated from the common mode potential of the two nodes. The voltage drop between two points in a circuit under test is determined by detecting the current flowing through a resistive shunt coil connected in parallel to the test points. Current through the resistive shunt coil is linearly proportional to the voltage difference between the test points, and it is detected by using a magnetic sensor that is separated from the shunt coil by an insulating dielectric barrier. The transducer can be packaged in a standard integrated circuit package in order to provide a small and low cost voltage transducer for test, measurement, control, and signal-isolation applications.

Abstract: In one example, a position sensor is provided. The position sensor comprises an integrated circuit, and a magnetic field sensor that provides a detected signal indicative of a position of a magnetic field source to the integrated circuit. The magnetic field sensor comprises a tunneling magnetoresistance (TMR) sensor. The position sensor further comprises a wireless circuit coupled to the integrated circuit, wherein the wireless circuit comprises an antenna configured to radiate a position signal based on the detected signal.

Abstract: In some embodiments, a plurality of expected values of a drive current corresponding to respective ones of a plurality of potential values of a Hall sensor output is determined. An actual value of the Hall sensor output is measured. An actual value of the drive current is measured. A potential value of the Hall sensor output corresponding to the actual value of the Hall sensor output is selected. The expected value of the drive current associated with the selected potential value of the Hall sensor output is compared to the actual value of the drive current. A value of the drive current is adjusted to reduce a difference between the expected value of the drive current associated with the selected potential value of the Hall sensor output to the actual value of the drive current.

Abstract: Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

Abstract: A device is disclosed. In one embodiment the device comprises a bias field generator configured to provide a magnetic bias field for a magnetic sensor, the bias field generator including a body comprising magnetic or magnetizable material, a packaged magnetic sensor accommodating the magnetic sensor and a recess disposed in the body, wherein the packaged magnetic sensor is arranged in the recess, and wherein the body includes two separate body parts, each body part include a part of the recess, and each body part is configured to hold in place the packaged magnetic sensor.

Abstract: A magnetic balance type current sensor includes a magnetic balance type current sensor including a magnetoresistance effect element whose characteristic changes owing to an induction magnetic field from a current to be measured flowing through a conductor, a feedback coil configured to be disposed in the vicinity of the magnetoresistance effect element and generate a cancelling magnetic field cancelling out the induction magnetic field, a magnetic shield configured to attenuate the induction magnetic field and enhance the cancelling magnetic field, and a hard bias layer configured to be provided on or above the magnetic shield.

Abstract: Implementations described and claimed herein provide a synthetic antiferromagnetic (SAF) layer with canted pinning, wherein a down-track direction facing surface of the SAF layer has edges that are substantially parallel to pinning direction of the SAF layer.

Abstract: The present invention relates to a magnetoresistance device using a semiconductor substrate and a method for manufacturing the same. The magnetoresistance device includes: a semiconductor substrate; an oxidation layer disposed on a surface of the semiconductor substrate; electrodes disposed on the oxidation layer; and at least one diode connected between at least two of the electrodes. The magnetoresistance device of the present invention has excellent performances of a high field magnetoresistance characteristic and high sensitivity at low magnetic field, and has advantages of low power consumption, simple device structure, low cost and simple manufacturing process.

Abstract: A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.

Abstract: A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.

Abstract: An electric current measurement method is provided with: a first controlling process of sweeping a sensing current in a negative magnetization direction in a condition that a core is saturated magnetically in a positive magnetization direction; a second controlling process of sweeping the sensing current in the positive magnetization direction in a condition that the core is saturated magnetically in the negative magnetization direction; a first specifying process of specifying a value of the sensing current if the core is demagnetized in the first controlling process; a second specifying process of specifying a value of the sensing current if the core is demagnetized in the second controlling process; and a calculating process of calculating a value of a target electric current on the basis of the specified current values, the first and second controlling processes being performed repeatedly.

Abstract: A shift register memory device includes a shift register, program/read element, and rotating force application unit. The shift register includes plural rotors arranged along a direction with uniaxial anisotropy. Each rotor has a characteristic direction rotatable around a rotational axis extending in the direction. The program/read element can program data to the shift register by matching the characteristic direction of one of the rotors to one selected from two directions conforming to the uniaxial anisotropy and to read data by detecting the characteristic direction. The rotating force application unit can apply a rotating force to the shift register to urge the characteristic direction to rotate. The rotors are organized into plural pairs of every two adjacent rotors. Respective first and second forces urge the characteristic directions to be opposingly parallel for two rotors of the same pair and for two mutually adjacent rotors of mutually adjacent pairs.

Abstract: A method is described for detecting a correlation between at least two ring oscillators and to a system for carrying out the method. In the method a memory field is used in which combinations of concatenations are each assigned a bit.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

Abstract: A first magnetic sensor and a second magnetic sensor are disposed so that the main sensitivity axis direction of the first magnetic sensor is oriented in the direction of an induction magnetic field from a current flowing through a current line, the main sensitivity axis direction of the second magnetic sensor is oriented in a direction opposite to the direction of an induction magnetic field from the current flowing therethrough, the individual main sensitivity axis directions of the first and second magnetic sensors are oriented in a same direction, and the individual sub-sensitivity axis directions of the first and second magnetic sensors are oriented in the same directions as or directions opposite to the directions of the sub-sensitivity axis components of the induction magnetic fields to which the first and second magnetic sensors are individually subjected from a current flowing through an adjacent current line adjacent to the current line.

Abstract: A current sensor includes: a first magnetic sensor and a second magnetic sensor; a first analog-to-digital converter which is connected to the first magnetic sensor and converts an output signal of the first magnetic sensor from an analog signal to a digital signal so as to be output; a second analog-to-digital converter which is connected to the second magnetic sensor and converts an output signal of the second magnetic sensor from an analog signal to a digital signal so as to be output; and an operation device which is connected to the first analog-to-digital converter and the second analog-to-digital converter, and outputs an operation value by subjecting the output signal of the first analog-to-digital converter and the output signal of the second analog-to-digital converter to differential operation.

Abstract: In a magnetic sensor, a pinned layer covers a wiring layer on a side opposite to a substrate with respect to the wiring layer and includes a bent portion having a bent shape in cross section. Free layers are arranged on a side opposite to the substrate with respect to the pinned layer. The size of the free layers in a planar direction is set to a size smaller than the size of the pinned layer in the planar direction. A magnetic field leaking from the pinned layer may form a closed loop adjacent to the substrate, that is, on a side opposite to the free layers with respect to the substrate. Therefore, influence of the magnetic field leaking from the pinned layer on the free layers can be restricted.

Abstract: Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.

Abstract: There is provided a current sensor capable of performing malfunction determination with high accuracy even under the influence of an adscititious magnetic field. A current sensor includes first and second current sensor units, a computation unit, a storage unit, and a determination processing unit. The first current sensor unit measures a target current. The first and second current sensor units have almost the same sensitivity. The computation unit calculates and outputs an addition value and a difference value of outputs of the first and second current sensor units. In the storage unit, the addition and difference values output from the computation unit are stored. The determination processing unit determines whether a malfunction has occurred by using the addition and difference values stored in the storage unit. The determination processing unit determines that a malfunction has occurred, in a case where there is a correlation between the addition and difference values.

Abstract: Various embodiments can be generally directed to a magnetoresistive stack with a first stripe height and a biasing magnet positioned adjacent the magnetoresistive stack. The biasing magnet can have a second stripe height that is less than the first stripe height. The first and second stripe heights may correspond to a minimum signal to noise ratio in the magnetoresistive stack.

Abstract: A non-contact current censor includes a spin valve structure (2), an electrical unit (4) that applies a varying current to the spin valve structure (2), and a resistance reading unit that electrically reads out a resistance value of the spin valve structure (2). When a current-induced magnetic field is detected, a coercive force of a free layer (14) is configured to be larger than the current-induced magnetic field as a detection target, and the electrical unit (4) allows the magnetization directions of a pinned layer (12) and the free layer (14) to transition between a mutually parallel state and a mutually anti-parallel state by applying the current to the spin valve structure (2). The resistance reading unit (5) detects a threshold value corresponding to the transition.

Abstract: One or more embodiments are directed to a motor configured to rotate at least one magnet at a first frequency, a sensor configured to generate a reference signal of the at least one magnet's rotation, and a lock-in detection system configured to receive the reference signal, supply an excitation current at a second frequency to a device under test, measure a voltage from the device under test and demodulate the second frequency, and demodulate the first frequency from the measured voltage using the reference signal to obtain a Hall voltage associated with the device under test.

Abstract: A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

Abstract: In an electric current detector according to the present invention, an annular core 2 having a magnetic gap G and a Hall element 41 which is located in the magnetic gap of the core 2 and detects a magnitude of an electric current passing through the core 2 are arranged in an outer case 1. Here, in the core 2, a mold resin portion 3 which covers a surface of the core 2 over part of an overall length along a magnetic path thereof is molded at one or a plurality of portions along the magnetic path to configure an integral core component, the core component being fixed into the outer case 1 in a state where a surface of the mold resin portion 3 makes contact with an inner surface of the outer case 1.

Abstract: Disclosed is a magnetoresistive magnetic field gradient sensor, comprising a substrate, a magnetoresistive bridge and a permanent magnet respectively disposed on the substrate; the magnetoresistive bridge comprises two or more magnetoresistive arms; each magnetoresistive arm consists of one or more magnetoresistive elements; each magnetoresistive element is provided with a magnetic pinning layer; the magnetic pinning layers of all the magnetoresistive elements have the same magnetic moment direction; the permanent magnet is disposed adjacent to each magnetoresistive arm to provide a bias field, and to zero the offset of the response curve of the magnetoresistive element; the magnetoresistive gradiometer includes wire bonding pads that can be electrically interconnected using wire bonding to an ASIC or to the lead frame of a semiconductor chip package.

Abstract: A magnetoresistive sensing device is provided. A first sensed magnetic-field component in parallel with the x-axis and a second sensed magnetic-field component in parallel with the y-axis of an external magnetic field forming a first inclination angle with the x-axis and a second inclination angle with the y-axis are determined. A virtual plane is defined so as to render a magnetic-field component perpendicular to the virtual plane of the external magnetic field is essentially zero. The first inclination angle and the second inclination angle are adjusted with reference to the virtual plane. An x-axis magnetic-field component in parallel with the x-axis, a y-axis magnetic-field component in parallel with the y-axis and a z-axis magnetic-field component in parallel with the z-axis of the external magnetic field are estimated according to the adjusted first inclination angle, the adjusted second inclination angle, the first sensed magnetic-field component and the second sensed magnetic-field component.

Abstract: An apparatus of a magnetoresistance sensor consisting of a substrate, a conductive unit on the substrate, and a magnetoresistance structure on the conductive unit is provided. The conductive unit includes a first surface and a second surface opposite to each other, and the first surface faces the substrate. The magnetoresistance structure is formed on the second surface of the conductive unit and is electrically connected to the conductive unit. The magnetoresistance sensor has high performance and reliability. A magnetoresistance sensor fabricating method based on this apparatus is also provided.

Abstract: A spin dependent tunneling device includes an electrically insulative material intermediate layer, a magnetization reference layer on one of the opposite major surfaces of the intermediate layer, and a memory film of a magnetostrictive, anisotropic ferromagnetic material on the other of the opposite major surfaces of the intermediate layer. The memory film material has a magnetization directed at an angle with respect to the relatively fixed direction of the magnetization reference layer, due to an effective magnetic bias field being present, in a first kind of stress condition with unequal coercivities for external magnetic fields applied in opposite directions. In one kind of stress condition the device has a coercivity with a magnitude exceeding that of the effective magnetic bias field, and in another kind of stress condition, the device has a coercivity with a magnitude less than that of the effective magnetic bias field.

Abstract: A method of designing, for a magneto-resistive (MR) sensor, a protection circuit having a first and a second N-channel field-effect transistor (NFET) and at least one positive-negative (PN) diode is disclosed. The method may include determining a safe operating voltage range for the MR sensor and determining, within the safe operating voltage range, a normal operating voltage range for the MR sensor. The method may also include determining a protection threshold voltage range outside of the normal operating voltage range and within the safe operating voltage range of the MR sensor. The method may also include selecting device parameters to configure the first and second NFETs and the at least one PN diode to, in response to a voltage applied to the MR sensor being within a protection threshold voltage range, limit, by shunting current, the voltage applied to the MR sensor.

Abstract: A magnetic sensor is provided, including: a substrate; a plurality of magneto resistance element portions, disposed above the substrate, each including: a free magnetic layer having a magnetization direction changeable by an external magnetic field; and a pin magnetic layer having a fixed magnetization direction; and a plurality of heater portions corresponding to the magneto resistance element portions, respectively, and configured to heat a corresponding pin magnetic layer, wherein the magnetization direction of the pin magnetic layer of one magneto resistance element portion is different from the magnetization direction of the pin magnetic layer of another magneto resistance element portion on a plane parallel to a surface of the substrate, when the external magnetic field is applied to each of the magneto resistance element portions, the magnetic sensor detects a physical amount based on a change in a resistance of each of the magneto resistance element portions.

Abstract: A micro-fabricated atomic clock structure is thermally insulated so that the atomic clock structure can operate with very little power in an environment where the external temperature can drop to ?40° C., while at the same time maintaining the temperature required for the proper operation of the VCSEL and the gas within the vapor cell.

Abstract: An apparatus, method and computer-readable medium configured to transport a constituent of fluid sample that binds to a functionalized magnetic particle. The apparatus includes a substrate connected to an input port, a magnetic nanowire, and either a temporally changing magnetic field generator or a spin-polarized current source. The magnetic nanowire is disposed in a surface of the substrate. The width and thickness of the magnetic nanowire are configured so that a domain wall propagating along the nanowire in response to the temporally changing magnetic field continuously couples to a superparamagnetic particle introduced into the input port.

Abstract: A power measurement apparatus configured to measure power consumed at a load, the apparatus includes a magnetic film module, an adjuster, a measurement resistance, and a voltage detector. The magnetic film module is arranged so that a longitudinal direction of the magnetic film module is parallel to current flowing in the load. The adjuster is configured to adjust a pass-frequency and a phase of a voltage at one terminal of the magnetic film module. The measurement resistance is serial-connected to the magnetic film module. The voltage detector is configured to detect a voltage between both terminals of the magnetic film module.

Abstract: Embodiments relate to an apparatus comprising a first measurement bridge circuit. The first measurement bridge circuit comprises a first half bridge for providing a first half bridge signal in response to a quantity to be measured and a second half bridge for providing a second half bridge signal in response to the quantity. The apparatus further comprises a second measurement bridge circuit. The second measurement bridge circuit comprises a third half bridge for providing a third half bridge signal in response to the quantity and a fourth half bridge for providing a fourth half bridge signal in response to the quantity. The apparatus also comprises an error detector. The error detector is configured to determine an error signal indicative of an error of the measurement of the quantity based on a combination of the first, the second, the third and the fourth half bridge signal.

Abstract: A magnetometer (100) for measuring an external magnetic field has at least one core (102), two excitation coils (106a), (106b), and a pick-up coil (104). The at least one core (102) has a magnetoresistance property measurable in response to the external magnetic field (111). Each excitation coil (106a), (106b) is near or around opposite ends of the core (102) or near or around a respective core. The excitation coils (106a), (106b) are configured to be driven by an alternating current to partially saturate a magnetisation of the core during part of the AC cycle. The pick-up coil (104) is near or around at least a portion of the core (102) and the excitation coils (106a), (106b). The pick-up coil (104) is configured to carry a signal induced at least in the presence of the external magnetic field (111). The induced signal is measurable in response to the external magnetic field (111).

Abstract: Embodiments relate to a sensor device including a layer stack 600, the layer stack 600 including at least ferromagnetic and non-magnetic layers formed on a common substrate 620. The sensor device 600 further includes at least a first magneto-resistive sensor element 711 provided by a first section 611 of the layer stack 600. The first magneto-resistive sensor element 711 herein is configured to generate a first signal. The sensor device 600 also includes a second magneto-resistive sensor element 712 provided by a second section 612 of the layer stack 610. The second magneto-resistive sensor element 712 herein is configured to generate a second signal for verifying the first signal.

Abstract: An object is to achieve miniaturization and an increase in performance of a magnetic sensor device, and the magnetic sensor according to the present invention has a magnetic film and a metal electrode to be electrically coupled to the magnetic film, the magnetic film and the metal electrode constituting a magnetic sensor portion. The metal electrode is formed with level difference portions, and the magnetic film is formed on the level difference portions and sidewalls that connect the level difference portions.