Abstract: A redundancy system includes a first computational device and a second computational device each configured to receive at least one input and to generate a first output and a second output, respectively, based on the at least one input; a random sequence generator configured to generate a random bit sequence; a random delay selector configured to determine a random delay based on the random bit sequence; a first random delay circuit configured to delay outputting the at least one input to the first computational device based on the random delay; a second random delay circuit configured to delay outputting the second output based on the random delay; and a fault detection circuit configured to receive the first output and the delayed second output, and to generate a comparison result based on comparing the first input to the delayed second output.

Abstract: A system for detecting an analyte gas in an environment includes a first gas sensor, a first contaminant sensor separate and spaced from the first gas sensor, and electronic circuitry in electrical connection with the first gas sensor to determine if the analyte gas is present based on a response of the first gas sensor. The electronic circuitry is further in electrical connection with the first contaminant sensor to measure a response of the first contaminant sensor over time. The measured response of the first contaminant sensor varies with an amount of one or more contaminants to which the system has been exposed in the environment over time.

Abstract: A closed-loop controlled chemical apparatus includes: a compound sensor including: an analyte sensor and that: produces, by the analyte sensor, a voltage signal; a reference sensor in electrical communication with the analyte sensor; a transistor including a gate terminal such that a drain current of the transistor is maintained at a constant value and operated at an optimal transduction condition of peak sensitivity and minimum noise of the transistor; a feedback controller in electrical communication with the transistor and that: receives a transduction signal; determining a deviation of the transduction signal from a setpoint, the setpoint determined by transfer characteristics of the transistor; produces the feedback control signal that minimizes the deviation of the transduction signal from the based on a control model; and communicates the feedback control signal to the reference sensor for suppression of electrical noise fluctuations in the closed-loop controlled chemical apparatus.

Abstract: Various examples are provided for low cost disposable medical sensors fabricated on glass, paper or plastics, and applications thereof. In one example, a medical sensor includes a base structure comprising a functionalized sensing area; and a transistor disposed on the base structure adjacent to the functionalized sensing area. In another example, a medical sensor includes a base structure comprising a functionalized sensing area disposed on a first electrode pad and a reference sensing area disposed on a second electrode pad separated from the first electrode pad; and a transistor having a gate electrically coupled to the second electrode pad of the base structure. A gate pulse applied to the functionalized sensing can produce a drain current corresponding to an amount of a target present in a sample disposed on the base structure.

Abstract: A method is provided for operating a gas concentration monitoring system as well as a gas-measuring device, a central unit, a gas concentration monitoring system as well as computer program product. The safety of persons or the safety of a situation is determined with respect to at least one hazardous gas. The concentration of the gas is provided to a memory and analysis device. A measured value rating number is determined for a preset period of use. A number of instances, of the measured concentration values exceeding of a preset gas concentration limit value is input. A safety code is determined from at least one of: the measured concentration values, the measured value rating numbers and from the a total number of instances in which a gas concentration limit value was exceeded.

Abstract: A first substrate including a first surface and a second surface on an opposite side of the first surface, the first surface being a detection surface for detecting unevenness of an object coming is contact or close, a second substrate facing the other surface of the first substrate, and a sensor unit provided between the first substrate and the second substrate, and which detects the unevenness of a finger coming in contact with or close to the detection surface.

Abstract: A pressure sensing device includes a substrate, at least a pressure sensing module, and a packaging layer. The pressure sensing module is arranged at the substrate including a plurality of conductive units, a plurality of pressure sensing blocks and a plurality of buffer units. Each conductive unit has a first electrode and a second electrode. The pressure sensing blocks are respectively arranged at the conductive units. Each pressure sensing block has a circuit structure that electrically connects the first electrode and the second electrode of each corresponding conductive unit. Each buffer unit is arranged between each corresponding conductive unit and each corresponding pressure sensing block comprising a plurality of buffer bumps arranged in an array at the first electrode and the second electrode of each corresponding conductive units. The packaging layer is bonded to the substrate, the conductive units and the pressure sensing blocks.

Abstract: The described embodiments may provide a chemical detection circuit. The chemical detection circuit may comprise a column of chemically-sensitive pixels. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor, and a row selection device. The chemical detection circuit may further comprise a column interface circuit coupled to the column of chemically-sensitive pixels and an analog-to-digital converter (ADC) coupled to the column interface circuit. Each column interface circuit and column-level ADC may be arrayed with other identical circuits and share critical resources such as biasing and voltage references, thereby saving area and power.

Abstract: A method for electrically characterizing a layer disposed on a substrate and electrically insulated from the substrate is disclosed. The method can include forming a test pattern, contacting the test pattern with electrical contact elements at contact regions, and measuring an electrical parameter of the layer by passing a first set of test currents between contact regions. The test pattern can be formed by pushing a pattern forming head against a top surface of the layer, introducing a first fluid into the cavity, and converting the sacrificial portion of the layer into an insulator using the first fluid and forming the test pattern under the test-pattern-shaped inner seal.

Abstract: A redundancy system includes a first computational device and a second computational device each configured to receive at least one input and to generate a first output and a second output, respectively, based on the at least one input; a random sequence generator configured to generate a random bit sequence; a random delay selector configured to determine a random delay based on the random bit sequence; a first random delay circuit configured to delay outputting the at least one input to the first computational device based on the random delay; a second random delay circuit configured to delay outputting the second output based on the random delay; and a fault detection circuit configured to receive the first output and the delayed second output, and to generate a comparison result based on comparing the first input to the delayed second output.

Abstract: A gas sensing device is adapted to detect a concentration of a target gas. The gas sensing device comprises a dielectric layer, a reference sensing portion, a target sensing portion, and a controller. The dielectric layer is disposed on a surface. The reference sensing portion and the target sensing portion are respectively disposed on a supporting side of the dielectric layer, with said supporting side facing away from the surface. The reference sensing portion includes a first conductive layer and a first sensing layer with low sensitivity to the target gas. The target sensing portion includes a second conductive layer and a second sensing layer with high sensitivity to the target gas. The controller obtains the immittance values of the first conductive layer and the second conductive layer, and calculates a concentration value of the target gas according to the immittance values and a correlation function.

Abstract: A computer implemented method for functional safety verification includes simulating SA0 and/or SA1 faults at a Q output port of each sequential element in a first representation of an electronic design, to determine whether any of the simulated faults is detectable by a safety mechanism, determining, based on one or more fault relation rules and based on a second gate-level representation of the electronic design, whether any of the faults is also detectable by the safety mechanism if occurred at one or more input ports of the respective sequential element or one or more input ports of a clockgate of the respective sequential element, and identifying a remainder of input ports and input ports of a clockgate of each of the sequential elements at which the faults are not determined to be detectable by the safety mechanism based on the one or a plurality of fault relation rules.

Abstract: A method of calibration of gas sensors, including breath gas sensors which are portable and for home, consumer, or medical use, wherein the calibration against samples of a measured gas having a concentration above the null value is only performed once to establish a set of calibration ratios of measured known gas concentration readings over null sample readings. Thereafter, in use, the ratio of unknown gas concentration in a test sample to a null value (preferably ambient air) is determined without recalibration, and that ratio is compared with the set of calibration ratios to determine the unknown gas concentration by interpolation or extrapolation.

Abstract: An apparatus comprises a housing defining a chamber that has a liquid disposed therein, and a sensor submerged in the liquid. The sensor comprises a porous conductive film on a substrate, and the film comprises chemiresistive semiconducting metal oxide structures. The sensor also comprises an electrode pair operably connected to the porous conductive film for generating electric current in the film and for detecting a change in an electrical property of the film. The apparatus can be used to detect, identify, and quantify ions and molecules in a liquid sample. Molecules and ions, in a liquid sample, that interact with the porous conductive film can cause a change in an electrical property of the film. The change in electrical property of the film can be correlated with the presence and amount of the molecules or ions.

Abstract: Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

Abstract: An end-point detection sensor 50 detects an end point of polishing, the end-point detection sensor 50 being arranged in a polishing table 100. The end-point detection sensor 50 has a pot core. The pot core 60 has a bottom portion 61a, a magnetic core base portion 61b and a peripheral wall base portion 61c. The end-point detection sensor 50 has an exciting coil 62, and a detection coil 63. The back surface 101b of the polishing pad 101 has a space 30 which is arranged at a portion facing the polishing table 100 and houses a magnetic core extension portion 8 and a peripheral wall extension portion 11. The magnetic core extension portion 8 and the peripheral wall extension portion 11 extending to the space 30 are located in the space 30.

Abstract: Method for wide range gas detection using a gas detection system comprising a sample gas inlet, a reference gas inlet, a gas modulation valve and a gas analyzer, wherein the gas modulation valve alternatingly connects the sample gas inlet to the gas analyzer during a sample gas time period and the reference gas inlet to the gas analyzer during a reference gas time period, characterized in that the sample gas time period is shorter than the reference gas time period such that the sample gas concentration in the gas analyzer is reduced.

Abstract: A method for monitoring the supply voltage of a hearing aid comprising an electric cell (1) comprises the steps of counting the number of times the supply voltage falls below a predetermined value, and setting an alarm flag if said number of times reaches a predetermined value. The method may be implemented using a circuit for monitoring the supply voltage of an electric cell. The circuit comprises a timer timing a detection interval, a detector for detecting drops in the voltage below a predetermined threshold value, a counter for counting the number of detections within said detecting interval, means (3) for setting an alarm flag if said number of times reaches a predetermined value within said first detection interval, and means (12) for suspending alarms during warm-up phase.

Abstract: A nanostructured environmental sensor includes a silicon based substrate, a structural base located above the substrate, and a sensor portion suspended above the structural base. A top surface of the sensor portion is formed from nickel oxide using atomic layer deposition. The nanostructured thin film nickel oxide environmental sensor is provided in a housing to form an environmental sensor package for sensing attributes of the environment to which the environmental sensor package is exposed.

Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.

Abstract: A first substrate including a first surface and a second surface on an opposite side of the first surface, the first surface being a detection surface for detecting unevenness of an object coming in contact or close, a second substrate facing the other surface of the first substrate, and a sensor unit provided between the first substrate and the second substrate, and which detects the unevenness of a finger coming in contact with or close to the detection surface.

Abstract: A semiconductor device includes a substrate having first and second principal surfaces, and a semiconductor chip disposed on the first principal surface. The substrate includes a first conductor layer disposed on the first principal surface, a second conductor layer disposed on the second principal surface, at least one third conductive layer between the first conductive layer and the second conductive layer, a detection interconnection disposed in either the first conductive layer or the third conductive layer, and first and second pads disposed on the second conductive layer and connected to the detection interconnection. The detection interconnection is not part of signal interconnections that are used during operation of the semiconductor chip and is not electrically connected to any circuit of the semiconductor chip.

Abstract: A detection system includes a planar plasmonic element for analyzing an analyte, the plasmonic element having dielectric and metallic regions, the plasmonic element emitting light that carries detected information; and a planar two-dimensional image sensor positioned in non-parallel angled relationship with respect to a plane of the plasmonic element to enhance a spatial image resolution for the light that carries detected information with respect to at least a portion of the light.

Abstract: The present disclosure relates to vibration frequency sensors comprising a vibratable flow tube having an interior for receiving a fluid, a vibration detector coupled to the flow tube for detecting a frequency of the fluid received by the flow tube during vibration thereof; and measurement circuitry coupled to the vibration detector for determining a frequency shift over time of the detected frequency. At least a portion of a surface of the interior of the flow tube is functionalized with a reactant sensitive to the analyte, and the frequency shift corresponds to the presence of the analyte, the analyte having reacted with the reactant.

Abstract: Devices and methods for detecting chemicals are disclosed. A device configured for use in a wellbore includes a sensor including a quantum tunneling composite (QTC) material configured to exhibit a change in electrical resistance responsive to the sensor contacting a target chemical. The sensor includes electrical resistance measuring circuitry operably coupled to the QTC material and configured to measure the electrical resistance of the QTC material and output a sensor signal indicating the electrical resistance. A method comprises deploying the sensor into the wellbore, measuring the electrical resistance of the QTC material, and determining the presence of the target chemical responsive to detecting changes in the electrical resistance of the QTC material. Another method includes selecting at least one of the QTC material and an active material to interact with a target wellbore chemical to change the electrical resistance of the QTC material.

Abstract: Sensor arrays are provided for sensing pressure and/or moisture over a two-dimensional sensing surface. The sensor arrays comprise ionically conductive materials. Individual sensor elements in the sensor arrays may comprise piezoionic ionically conductive materials, piezoresistive ionically conductive materials and/or capacitive sensor elements having electrodes fabricated from ionically conductive materials. Two-dimensional pressure maps and/or moisture maps of the sensing surface may be obtained by implementing methods comprising scanning over individual sensor elements in the sensor arrays.

Abstract: A sensing element for a temperature sensor including a base with a platinum meander applied thereto. An alumina diffusion barrier (ADB) covers the meander to provide protection against contamination and structural stabilization, wherein the alumina diffusion barrier is a contiguous polycrystalline layer fabricated from alumina and approximately 1% by weight of a rutile additive to be substantially devoid of network porosity. The contiguous polycrystalline layer includes grains with a typical grain size being in a range of 0.5-3 ?m. A method for fabricating an alumina diffusion barrier includes the steps of: combining a nano-alumina and nano-rutile powder to create a formulation; applying the formulation to the platinum meander to form a layer; and sintering the layer to create a contiguous polycrystalline layer covering the platinum meander.

Abstract: An ion-sensitive structure includes a semiconductor structure and a layer stack disposed on the semiconductor structure having a doped intermediate layer including a doping material and a first metal oxide material. The semiconductor structure is configured to change an electric characteristic based on a contact of the ion-sensitive structure with an electrolyte including ions.

Abstract: An air conditioning apparatus includes a casing, a heat exchanger and a blower. In the casing, an intake port is formed and a blow-off port is formed in a top surface section. The heat exchanger and the blower are housed in the casing. The blower is caused to rotate while a flammable refrigerant flows to the heat exchanger during an operation, an intake air is taken into the casing from the intake port, a heat exchange is carried out between the flammable refrigerant and the intake air in the heat exchanger, and the heat-exchanged air is blown out from the blow-off port to an exterior of the casing. A first refrigerant sensor that detects the flammable refrigerant is disposed on a downwind side of the heat exchanger inside the casing.

Abstract: A fault processing subsystem of an electronics assembly, senses an alarm state at an output of a first power distribution element of multiple power distribution elements arranged in a hierarchy in the electronics assembly. The first element is at a level of the hierarchy other than the top level, and the alarm state corresponds to an output of the first element being different than an expected output of that element. The fault processing subsystem commands, in response to the sensing the alarm state, the first element to disable via a control input to the first element. In response to the fault processing subsystem thereafter sensing an alarm state at the power output of the commanded element, the fault processing subsystem commands an element at the next higher level in the hierarchy from the first element to disable.

Abstract: A method of obtaining a dot product includes applying a number of first voltages to a corresponding number of row lines within a memristive cross-bar array to change the resistive values of a corresponding number of memristors located a junctions between the row lines and a number of column lines. The first voltages define a corresponding number of values within a matrix, respectively. The method further includes applying a number of second voltages to a corresponding number of the row lines within the memristive cross-bar array. The second voltages define a corresponding number of vector values. The method further includes collecting the output currents from the column lines. The collected output currents define the dot product.

Abstract: Methods and systems are provided sensing particulate matter by a particulate matter (PM) sensor positioned downstream of a diesel particulate filter (DPF) in an exhaust system, where the PM sensor may include plurality of individual electrode pairs coupled to plurality of voltage sources and further to plurality of measurement devices. In one example, a method may include determining a total PM sensor current by summing current generated across the plurality of electrode pairs by determining the sum total of the current generated across the individual electrode pairs. In this way, the PM sensor may detect PMs in the exhaust more accurately, and not be affected by large particulates depositing on the electrodes.

Abstract: A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes.

Abstract: Embodiments of a particle sensor are provided. In one example, a particle sensor for an exhaust system comprises at least two inlet openings for an exhaust-gas flow of the exhaust system, wherein the inlet openings are of different sizes, and at least two sensor elements, wherein in each case one sensor element is arranged downstream of one inlet opening. In this way, the relative proportion of different-sized particles within the exhaust-gas flow may be determined.

Abstract: Systems and methods for using multiple inductive and capacitive fixtures for applying a variety of plasma conditions to determine fixed parameters of a match network model are described. The multiple fixtures mimic various plasma conditions without occupying tool time in which a wafer is placed within a plasma chamber to generate the fixed parameters of the match network model.

Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.

Abstract: An electric potential is applied to first and second electrodes on opposite sides of a gap between an electronic component and a heat spreader. At least one of a thermal interface material in the gap, the electronic component and the heat spreader is subjected to a changing physical condition. The electrical capacitance between the electrodes is monitored during the changing physical condition. Such a method can be practiced using an array of components sharing a common heat spreader. An assembly for testing thermal interfaces includes a printed circuit board, a plurality of electronic components mounted to and operatively associated with the printed circuit board, a heat spreader positioned for absorbing heat generated by the electronic components, a first electrode associated with the heat spreader, a plurality of second electrodes associated, respectively, with the electronic component, and a device for monitoring electrical capacitances between the first and second electrodes.

Abstract: Temperature accuracy is improved, conversion gain is increased without increasing current density and parasitic resistance errors and other problems with conventional bandgap reference temperature sensors are eliminated by generating a signal proportional to temperature from four samples, where the signal is defined as a difference between a first difference and a second difference, the first difference comprising a difference between the second sample and the first sample, the second difference comprising a difference between the fourth sample and the third sample, and where the signal is defined to cancel parasitic components in the first, second, third and fourth samples.

Abstract: A method is provided for qualifying a semiconductor wafer for subsequent processing, such as thermal processing. A plurality of locations are defined about a periphery of the semiconductor wafer, and one or more properties, such as oxygen concentration and a density of bulk micro defects present, are measured at each of the plurality of locations. A statistical profile associated with the periphery of the semiconductor wafer is determined based on the one or more properties measured at the plurality of locations. The semiconductor wafer is subsequently thermally treated when the statistical profile falls within a predetermined range. The semiconductor wafer is rejected from subsequent processing when the statistical profile deviates from the predetermined range. As such, wafers prone to distortion, warpage, and breakage are rejected from subsequent thermal processing.

Abstract: Embodiments of the subject invention relate to a gas sensor and method for sensing one or more gases. An embodiment incorporates an array of sensing electrodes maintained at similar or different temperatures, such that the sensitivity and species selectivity of the device can be fine tuned between different pairs of sensing electrodes. A specific embodiment pertains to a gas sensor array for monitoring combustion exhausts and/or chemical reaction byproducts. An embodiment of the subject device related to this invention operates at high temperatures and can withstand harsh chemical environments. Embodiments of the device are made on a single substrate. The devices can also be made on individual substrates and monitored individually as if they were part of an array on a single substrate. The device can incorporate sensing electrodes in the same environment, which allows the electrodes to be coplanar and, thus, keep manufacturing costs low.

Abstract: A test structure may characterize the properties of a transistor including a DC test structure for testing DC properties of the transistor, and an AC test structure for testing AC properties of the transistor. The DC and AC test structures may have common test pads.

Abstract: A technique is provided for performing sequencing with a nanodevice. Alternating graphene layers and dielectric layers are provided one on top of another to form a multilayer stack of heterojunctions. The dielectric layers include boron nitride, molybdenum disulfide, and/or hafnium disulfide layers. A nanopore is formed through the graphene layers and the dielectric layers. The graphene layers are individually addressed by applying individual voltages to each of the graphene layers on a one to one basis when a particular base of a molecule is in the nanopore. Each of the graphene layers is an electrode. Individual electrical currents are measured for each of the graphene layers as the particular base moves from a first graphene layer through a last graphene layer in the nanopore. The base is identified according to the individual electrical currents repeatedly measured for the base moving from the first through last graphene layer in the nanopore.

Abstract: A technique is provided for performing sequencing with a nanodevice. Alternating graphene layers and dielectric layers are provided one on top of another to form a multilayer stack of heterojunctions. The dielectric layers include boron nitride, molybdenum disulfide, and/or hafnium disulfide layers. A nanopore is formed through the graphene layers and the dielectric layers. The graphene layers are individually addressed by applying individual voltages to each of the graphene layers on a one to one basis when a particular base of a molecule is in the nanopore. Each of the graphene layers is an electrode. Individual electrical currents are measured for each of the graphene layers as the particular base moves from a first graphene layer through a last graphene layer in the nanopore. The base is identified according to the individual electrical currents repeatedly measured for the base moving from the first through last graphene layer in the nanopore.

Abstract: An ISFET includes a control gate coupled to a floating gate in a CMOS device. The control gate, for example, a poly-to-well capacitor, is configured to receive a bias voltage and effect movement of a trapped charge between the control gate and the floating gate. The threshold voltage of the ISFET can therefore by trimmed to a predetermined value, thereby storing the trim information (the amount of trapped charge in the floating gate) within the ISFET itself.

Abstract: A method for sensing analyte. The method includes the steps of sensing one or more parameters in reaction to the presence of one or more analytes and outputting a current therefrom in accordance with level of the sensed parameter by each of a plurality of sensors, each of the plurality of sensors being provided in one or more sensor array columns, selectively heating one or more of the sensor array columns by a heating element, and receiving an output current from one of the plurality of sensors from each of the plurality of sensor arrays by a Voltage Controlled Oscillator (VCO) arranged in a VCO array. The method further includes the steps of generating an output oscillation frequency by each VCO in accordance with the level of the received output current, and counting a number of oscillations over a predetermined time received from each of the plurality of VCOs in the VCO array by a plurality of counters arranged in a counter array.

Abstract: A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.

Abstract: One or more charge pumps may be used to amplify the output voltage from a chemically-sensitive pixel that comprises one or more transistors. A charge pump may include a number of track stage switches, a number of boost phase switches and a number of capacitors. The capacitors are in parallel during the track phase and in series during the boost phase, and the total capacitance is divided during the boost phase while the total charge remains fixed. Consequently, the output voltage is pushed up.

Abstract: Method for determining dopant impurities concentrations in a silicon sample involves provision of a silicon ingot including donor type dopant impurities and acceptor type dopant impurities, a step for determining the position of a first area of the ingot in which a transition takes place between a first conductivity and a second opposite conductivity types, by subjecting ingot portions to chemical treatment based on hydrofluoric acid, nitric acid and acetic acid, enabling defects to be revealed on one of the portions corresponding to the transition between the first conductivity and the second conductivity types, a step of measuring the concentration of free charge carriers in a second area of the ingot, different from the first area, and a step for determining concentrations of dopant impurities in the sample from the position of the first area and the concentration of free charge carriers in the second area of the ingot.

Abstract: Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode.

Abstract: Provided is a test structure for testing an unpackaged semiconductor wafer. The test structure includes a force-application component that is coupled to an interconnect structure of the semiconductor wafer. The force-application component is operable to exert a force to the semiconductor wafer. The test structure also includes first and second test portions that are coupled to the interconnect structure. The first and second test portions are operable to measure an electrical performance associated with a predetermined region of the interconnect structure. The first and second test portions are operable to measure the electrical performance while the force is exerted to the semiconductor wafer.