Abstract: A security device includes a physical unclonable function (PUF) cell array that includes a plurality of PUF cells connected with a first word line, a controller that selects a target PUF cell of the plurality of PUF cells and outputs a control signal based on the target PUF cell, a decoder that applies a first voltage to the first word line in response to the control signal, a bit line selection circuit that outputs a target current across a bit line connected with the target PUF cell and a sum current corresponding to a sum of currents across the remaining bit lines connected with other PUF cells, and a bit determiner that outputs a target bit of the target PUF cell based on the target current and the sum current, and the security device generates a security key based on the target bit for responding to an authentication requests.

Abstract: A system and method for a logic device is disclosed. A first substrate, and a second substrate is provided, which are spaced apart from each other and manifests Spin orbit torque effect. A nanomagnet is disposed over the first substrate and the second substrate. A first charge current is passed through the first substrate and a second charge current is passed through the second substrate. A direction of flow of the first charge current and the second charge current defines an input value of either a first value or a second value. A spin in the nanomagnet is selectively oriented based on the direction of flow of the first charge current and the second charge current. The spin in the nanomagnet is selectively read to determine an output value as the first value or the second value. The logic device is configured as a XOR logic.

Abstract: A system and method for a logic device is disclosed. A first nanotrack along a first axis and a second nanotrack along a second axis perpendicular to the first axis are disposed over a substrate. The second nanotrack is disposed over the first nanotrack in a overlap portion. An input value is defined about a first end of the first nanotrack and the second nanotrack by nucleating a skyrmion, wherein a presence of the skyrmion defines a first value and absence of the skyrmion defines a second value. The nucleated skyrmion moves towards the second end of the nanotracks when a charge current is passed through the first nanotrack and the second nanotrack along the second axis. The presence of the skyrmion sensed at the second end of the nanotrack indicates an output value of the first value.

Abstract: Embodiments of the present disclosure provide a level-sensitive register unit, including: a data latch for receiving data; a flip-flop including a first latch and a second latch, wherein an output of the data latch is coupled to an input of the first latch of the flip-flop; a first clock signal coupled to the data latch; and a second clock signal, wherein the second latch of the flip-flop is clocked by the second clock signal, and wherein the first latch of the flip-flop is clocked by an inverse of the second clock signal.

Abstract: Disclosed are a spin logic device based on spin-charge conversion and a spin logic array using the same. A reconfigurable spin logic array according to an exemplary embodiment of the present invention may include: an input terminal receiving at least three current signals; a plurality of wires transmitting the current signal in connection with the input terminal and including a horizontal wire and a vertical wire which cross each other; a first gate array in which at least one first majority gate connected to the input terminal through the wires and implemented based on the spin logic device is arranged; and a second gate array in which at least one second majority gate connected to the first gate array through the wires and implemented based on the spin logic device is arranged.

Abstract: A system and method for a logic device is disclosed. A first substrate, a second substrate and a third substrate is provided. A first input nanomagnet is disposed over the first substrate, a second input nanomagnet is disposed over the second substrate, and a third input nanomagnet is disposed over the third substrate. A spacer layer is disposed over the first input nanomagnet, the second input nanomagnet, and the third input nanomagnet. An output magnet is disposed over the spacer layer.

Abstract: A security device includes a physical unclonable function (PUF) cell array that includes a plurality of PUF cells connected with a first word line, a controller that selects a target PUF cell of the plurality of PUF cells and outputs a control signal based on the target PUF cell, a decoder that applies a first voltage to the first word line in response to the control signal, a bit line selection circuit that outputs a target current across a bit line connected with the target PUF cell and a sum current corresponding to a sum of currents across the remaining bit lines connected with other PUF cells, and a bit determiner that outputs a target bit of the target PUF cell based on the target current and the sum current, and the security device generates a security key based on the target bit for responding to an authentication requests.

Abstract: An integrated circuit provides a semiconductor die with I/O bond pads, a power bond pad, and a circuit ground pad. Each I/O bond pad is associated with an input circuit that has an input circuit output lead. Sets of digital logic functional circuitry on the die provide different digital logic functions. Each function includes logic input leads and logic output leads. Output circuits each have an output circuit in lead and an output circuit out lead. Strapping structures, such as vias, formed in the semiconductor die electrically couple input circuits to a selected set of digital logic functions and the selected set of digital logic functions to output circuit in leads. Upper level metal conductors couple output circuit out leads and selected I/O bond pads.

Abstract: A device, system, product and method of controlling resistive processing units (RPUs), includes applying an input voltage signal to each node of an array of resistive processing units, and controlling a learning rate of the array of resistive processing units by varying an amplitude of the input voltage signal to the array of resistive processing units. A conductance state of the array of resistive processing units is varied according to the amplitude received at each of the resistive processing units of the array of resistive processing units. The controlling of the amplitude of input voltage signal is according to a processor of a control device.

Abstract: During a test for integrated circuit aging effects, contents of a first set of flip flop circuits are transferred to a second set of flip flop circuits. A first test value is applied to inputs of a combinatorial logic circuit and outputs from the combinatorial logic circuitry are provided to inputs of the first set of flip flop circuits. The combinatorial logic circuitry is reversible and conservative. The outputs from the first flip flop circuits are compared to the first test value to determine if there is a match. A second test value is applied to the inputs of the combinatorial logic circuitry and the outputs from the combinatorial logic circuitry are provided to inputs of the first set of flip flop circuits. The outputs from the first flip flop circuits are compared to the second test value to determine if there is a match, and when the test mode finishes, contents of the second set of flip flop circuits are transferred to the first set of flip flop circuits.

Abstract: A quantum circuit, including, a first S gates, a first Toffoli gate, a Controlled-SWAP gates, a Controlled-Toffli gates, a second Toffoli gate, and a second S gates.

Abstract: Various implementations described herein are directed to a device having various circuitry for reading first data from a memory location in single-port memory and writing second data to the memory location in the single-port memory after reading the first data from the memory location. In some implementations, reading the first data and writing the second data to the memory location are performed in a single operation.

Abstract: Embodiments include a logic gate system comprising a first micro-cantilever beam arranged in parallel to a second micro-cantilever beam in which a length of the first micro-cantilever beam is shorter than a length of the second micro-cantilever beam. The first micro-cantilever beam is adjacent to the second micro-cantilever beam and the first micro-cantilever beam is coupled to an input DC bias voltage source to the logic gate system. The second micro-cantilever beam is coupled to an input AC voltage signal that dynamically sets a logic operation of the logic gate system by at least changing an operating resonance frequency for one or more of the first micro-cantilever beam and the second micro-cantilever beam.

Abstract: A memory bypass circuit for a memory device comprises: a word line disable circuit; a read and write activation circuit; an internal clock generator; and a write data input circuit. The word line disable circuit is coupled to a word line of the memory device for disabling a write function to the word line. The read and write activation circuit is coupled to the memory device for reading and writing of input data. The internal clock generator is coupled to the word line disable circuit and the read/write activation circuit. The write data input circuit is coupled to a write driver of the memory device for providing write data.

Abstract: A bridge output circuit of the present invention reduces the dead time. Upon receiving an input signal (SIN) for indicating on state of a high-side transistor (1H), a gate control signal generation circuit (4) outputs a low-side gate control signal (LGCTL) for turning off a low-side transistor (1L) to a low-side driver circuit (2L). On the other hand, a high-side gate control signal (HGCTL) for turning on the high-side transistor is generated from a signal delayed the low-side gate control signal and outputted to a high-side driver circuit (2H). The time of delay is controlled by the input signal (SIN), a signal (LGFB) indicating on/off state of the low-side transistor, and a signal (SOUT_L) indicating a level of an output signal.

Abstract: A semiconductor apparatus includes a clock control circuit that at least one of generates a plurality of latch control clocks, which are periodically transitioned, in response to a power saving mode signal and a clock, and individually locks each of the plurality of latch control clocks to one of multiple levels regardless of the clock. The semiconductor apparatus also includes a latch circuit that stores an input signal in response to the plurality of latch control clocks and outputs the stored signal as an output signal.

Abstract: Provided is an integrated circuit that has reduced power consumption. The integrated circuit is provided with: a plurality of first wires one end of each of which is used as an input terminal; a plurality of second wires one end of each of which is used as an output terminal and which are respectively connected to the first wires; a bias wire which is connected to each of the second wires, and which is connected to a power supply or ground; a plurality of switches which connect the first wires or the bias wire and the second wires; and a selection circuit which selects electrical connection between the bias wire and the power supply or ground.

Abstract: An improved electrical circuit for logic output level shifting using SiC JFETs with resistors on the input, inverting, stage and using diode degenerated JFET sources in the output stage.

Abstract: A logic gate and a cascaded logic family is described that uses the unique ambipolar behavior, e.g., of carbon nanotubes. A complementary VT-drop ambipolar carbon nanotube logic can provide a decrease in device count compared to previous ambipolar carbon nanotube field effect transistor logic structures, enabling power and/or speed improvements.

Abstract: To provide an asynchronous circuit capable of power gating, a semiconductor device is configured with first to third terminals, a latch circuit, and a memory circuit. The third terminal outputs “false” when “false” is input to the first terminal and the second terminal. The third terminal outputs “true” when “true” is input to the first terminal and the second terminal. The third terminal outputs a truth value that is the same as the previous output, when “true” is input to one of the first terminal and the second terminal and “false” is input to the other of the first terminal and the second terminal. The memory circuit is capable of storing data stored in the latch circuit, while supply of a power supply voltage is stopped. The memory circuit includes a transistor that contains a metal oxide in a channel formation region.

Abstract: According to an embodiment, a programmable logic circuit is described comprising a first data bit input to receive a first data bit a and a second data bit input to receive a second data bit b, a first program bit input to receive a first program bit p1, a second program bit input to receive a second program bit p2, a third program bit input to receive a third program bit p3 and a fourth program bit to receive a fourth program bit p4 and an output configured to output ( ( ( a ? b ) ? ( p 1 ? a ) ? ( p 2 ? b ) ) _ ? ( p 3 ? b ? a ) ) ? ( a ? b ? p 4 ) _ .

Abstract: To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.

Abstract: First and second comparators receive input signals of opposed polarities and drive operation of a switch in response thereto. A first current generator supplies a first current to the switch which, in response to the control of the first and second comparators, applies the first current, alternatively, to a first node or a second node. A second current generator sinks a second current from the first node and a third current generator sinks a third current from the second node. A logic circuit has inputs coupled to the first node and the second node, respectively, receives respective switching signals having fast switching wavefronts and delayed switching wavefronts. The output of logic circuit is configured for switching between a first state and a second state with switching between the first state and the second state triggered by the fast switching wavefronts of the respective switching signals.

Abstract: A sequential asynchronous system and a method for operating the same. The method includes operating a first asynchronous finite state machine at a first clock rate and operating a second asynchronous finite state machine at a second clock rate. The method also includes generating, with fork logic, a fork request based on a first state of the first asynchronous finite state machine and receiving, with join logic, the fork request from the fork logic. The method further includes receiving, with the join logic, a communication request from the second asynchronous finite state machine based on a second state of the second asynchronous finite state machine and initiating, with the join logic, a state transition of the second asynchronous finite state machine. The method also includes providing, with the join logic, a join acknowledgement to the fork logic upon completion of the state transition.

Abstract: In accordance with an embodiment, a method of controlling a switch driver includes energizing a first inductor in a first direction with a first energy; transferring the first energy from the first inductor to a second inductor, wherein the second inductor is coupled between a second switch-driving terminal of the switch driver and a second internal node, and the second inductor is magnetically coupled to the first inductor; asserting a first turn-on signal at the second switch-driving terminal using the transferred first energy; energizing the first inductor in a second direction opposite the first direction with a second energy after asserting the first turn-on signal at the second switch-driving terminal; transferring the second energy from the first inductor to the second inductor; and asserting a first turn-off signal at the second switch-driving terminal using the transferred second energy.

Abstract: Described herein is an integrated circuit which comprises: a switching voltage regulator (SVR), having one or more bridge drivers, to provide regulated power supply to a plurality of power domains; and a power control unit (PCU) operable to adjust switching frequencies of the SVR according to states of the plurality of power domains, wherein drive strength or active phase count of the one or more bridge drivers is also adjusted by a logic unit of the SVR when the switching frequencies of the SVR are adjusted.

Abstract: A sensing system includes an electronic tag and a reading device that transmits and receives information to and from the electronic tag. The reading device includes a transmission unit that sends an alternating-current radio wave including a high-frequency component and a low-frequency component. The electronic tag does not include a power supply and includes a receiving unit that obtains a power supply voltage from the high-frequency component of the alternating-current radio wave and obtains a clock signal from the low-frequency component and a return unit that maintains a maximum amplitude of the clock signal and sends a combination of information and the clock signal as a return signal. The reading device further includes a processing unit that decodes the return signal sent from the electronic tag on the basis of the clock signal.

Abstract: A data driver includes a receiver, a transition minimization coding (“TMC”) decoder, a dithering adder and a voltage generator. The receiver receives a clock signal and first image data which is generating by removing a dithering from a dithered original image data and performing a TMC. The TMC decoder removes the TMC from the first image data to generate second image data. The dithering adder restores the removed dithering based on the clock signal and the second image data to generate third image data. The voltage generator generates a plurality of data voltages based on the third image data.

Abstract: To provide an asynchronous circuit capable of power gating, a semiconductor device is configured with first to third terminals, a latch circuit, and a memory circuit. The third terminal outputs “false” when “false” is input to the first terminal and the second terminal. The third terminal outputs “true” when “true” is input to the first terminal and the second terminal. The third terminal outputs a truth value that is the same as the previous output, when “true” is input to one of the first terminal and the second terminal and “false” is input to the other of the first terminal and the second terminal. The memory circuit is capable of storing data stored in the latch circuit, while supply of a power supply voltage is stopped. The memory circuit includes a transistor that contains a metal oxide in a channel formation region.

Abstract: Embodiments relate to programmable delay circuit. An aspect includes a first stage comprising a first hybrid fin field effect transistor (finFET) comprising a first gate corresponding to a first control FET, and a second gate corresponding to a first default FET, and a first plurality of fins, wherein the first gate and the second gate of the first stage each partially control a first shared fin of the first plurality of fins. Another aspect includes a second stage connected in series with the first stage, the second stage comprising a second hybrid finFET comprising a first gate corresponding to a second control FET, and a second gate corresponding to a second default FET, and a second plurality of fins, wherein the first gate and the second gate of the second stage each partially control a second shared fin of the second plurality of fins.

Abstract: The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone.

Abstract: Memristor-based adders using memristors-as-drivers (MAD) gates. As a result of employing MAD gates in memristor-based adders, such as ripple carry adders, carry select adders, conditional sum adders and carry lookahead adders, the number of delay steps may be less than half than the number of delay steps required in traditional CMOS implementations of adders. Furthermore, by using MAD gates, memristor-based adders can be implemented with less complexity (e.g., fewer memristors and drivers). As a result, by the memristor-based adders using MAD gates, the speed and complexity of a wide variety of arithmetic operations is improved.

Abstract: Self-organizing logic gates formed from a combination of memristor devices and dynamic correction modules configured to provide a stable operation upon application of a signal to any terminal. A SOLG of the invention can accept signals from any terminal and does not require an absence of signals at any other terminal. Terminal signals can superpose and the gate finds equilibrium, if an equilibrium exists.

Abstract: To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.

Abstract: The present disclosure discloses a full adder based on resistive-switching devices and an operation method thereof. A multi-bit full adder circuit is constituted by using a cross-bar array of resistive-switching devices, wherein data of standard sums is stored on the principle diagonal of the cross-bar array in a nonvolatile manner, and carry data is stored in adjacent units on both sides of the principle diagonal. The carry data is stored according to whether the storage loop (crosstalk loop) is turned on. With the present disclosure, the multi-bit full adder circuit is significantly simplified. Thereby, additional circuits for generating a carry signal are reduced, the circuit delay and chip area are decreased, and the adder has an ability of nonvolatile storage.

Abstract: An integrated circuit 2 is provided with a serial scan chain. Disposed between at least some serial scan cells 32, 34 forming a serial scan chain there is provided a partial scan cells 36. These partial scan cells are arranged such that during a scan mode in which serial data is being shifted into and out of the serial scan cells, a fixed value is captured and stored into the partial scan cell 36. This avoids the presence of unknown data values within the signal paths between the functional logic 38, 40 which is to be tested.

Abstract: Macro-transistor structures are disclosed. In some cases, the macro-transistor structures have the same number of terminals and properties similar to long-channel transistors, but are suitable for analog circuits in deep-submicron technologies at deep-submicron process nodes. The macro-transistor structures can be implemented, for instance, with a plurality of transistors constructed and arranged in series, and with their gates tied together, generally referred to herein as a transistor stack. One or more of the serial transistors within the stack can be implemented with a plurality of parallel transistors and/or can have a threshold voltage that is different from the threshold voltages of other transistors in the stack. Alternatively, or in addition, one or more of the serial transistors within the macro-transistor can be statically or dynamically controlled to tune the performance characteristics of the macro-transistor.

Abstract: The invention concerns a circuit comprising: a C-element having first and second input nodes and first and second inverters (110, 112) cross-coupled between first and second complementary storage nodes (Q, Z), the second storage node (Z) forming an output node of the C-element; and a non-volatile memory comprising: a first resistive element (202) having a first terminal coupled to the first storage node (Q); a second resistive element (204) having a first terminal coupled to the second storage node (Z), at least one of the first and second resistive elements being programmable to have one of at least two resistive states (Rmin, Rmax), wherein a second terminal of the first resistive element (202) is coupled to a second terminal of the second resistive element (204) via a first transistor (210); and a control circuit (232).

Abstract: In an integrated clock gating (ICG) cell a latch is coupled to a NOR gate. The NOR gate receives an enable signal. The latch is configured to generate a latch output in response to the state of the enable signal. The latch includes a tri-state inverter. A NAND gate is coupled to the latch and the NAND gate is configured to generate an inverted clock signal in response to the latch output and a clock input.

Abstract: The disclosure provides a flip-flop that utilizes low power as a result of reduced transistor count. The flip-flop includes a tri-state inverter that receives a flip-flop input and a clock input. A master latch is coupled to an output of the tri-state inverter and provides a control signal to the tri-state inverter. The control signal activates the tri-state inverter. A slave latch receives an output of the master latch and the control signal. An output inverter is coupled to an output of the slave latch and generates a flip-flop output.

Abstract: A semiconductor integrated circuit may include a plurality of fuse boxes, each suitable for selectively outputting a first input signal and a reverse input signal obtained by inverting the first input signal; and a first output signal generator suitable for selectively receiving the first input signal and the reverse input signal from the fuse boxes, and generating a first output signal by performing a logical combination operation on the received input signals, a second input signal, and a third input signal.

Abstract: An electronic logic circuit uses areal capacitive coupling devices coupled together to process a set of data inputs. Each areal capacitive coupling device can be configured such that a floating gate potential of such device can be altered to at least a first state or a second state in response to receiving an input signal from the set of data inputs, which is coupled electrically to the floating gate. A majority function logic circuit (and other similar circuits) can be interconnected this way using far fewer gates than with a conventional CMOS implementation. Selective logic gates can also be enabled or disabled by configuring them effectively as memory devices.

Abstract: Wave Dynamic Differential Logic (WDDL) is provided, wherein a differential logic stage is pre-charged or pre-discharged by a previous logic stage, such as, for example, a previous SDDL stage, a WDDL stage, etc. In one embodiment, a Divided Wave Dynamic Differential Logic (DWDDL) is provided wherein a WDDL circuit is conveniently implemented as dual logic trees.

Abstract: A system includes an inverter element to gate forward current flow from a first signal source, and a reverse current inhibition element to block reverse current flow towards the first signal source from a second signal source.

Abstract: A method for detecting rising and falling transitions of internal signals of an array or integrated circuit. An apparatus used in the method comprises a delay line with a plurality of first to Nth delay elements, latches, and first to Nth groups of logic gates. Each of the first to Nth groups of the logical gates includes an AND gate and a NOR gate. The method determines rising and falling signals based on output signals of the logic gates in the apparatus; in odd numbered groups of the logic gates, the AND gate detects the rising transition and the NOR gate detects the falling transition; in even numbered groups of the logic gates, the AND gate detects the falling transition and the NOR gate detects the rising transition.

Abstract: A semiconductor integrated circuit may include a plurality of fuse boxes, each suitable for selectively outputting a first input signal and a reverse input signal obtained by inverting the first input signal; and a first output signal generator suitable for selectively receiving the first input signal and the reverse input signal from the fuse boxes, and generating a first output signal by performing a logical combination operation on the received input signals, a second input signal, and a third input signal.

Abstract: A binary half-adder comprising first and second oscillators, each oscillator being connected to a first input and to a second input, the second oscillator being connected to the first oscillator, wherein the first oscillator is configured to oscillate if the first input is high or the second input is high, the second oscillator is configured to oscillate if the first and the second inputs are high, and wherein the connection between the second oscillator and the first oscillator is configured to suppress oscillation of the first oscillator if the second oscillator is oscillating.

Abstract: In one aspect, the invention relates to logic cells that utilize one or more of spin diodes. By placing one or two control wires on the side of the spin diodes to generate magnetic fields in the spin diodes due to input currents, the logic cell can be changed from one logic gate to another logic gate. The unique feature leads to field logic devices in which simple instructions can be used to construct a whole new set of logic gates.

Abstract: A method and apparatus for detecting rising and falling transitions of internal signals of an array or integrated circuit. The apparatus comprises a delay line with a plurality of first to Nth delay elements, latches, and first to Nth groups of logic gates. Each of the first to Nth groups of the logical gates includes an AND gate and a NOR gate. The method and apparatus determines rising and falling signals based on output signals of the logic gates; in odd numbered groups of the logic gates, the AND gate detects the rising transition and the NOR gate detects the falling transition; in even numbered groups of the logic gates, the AND gate detects the falling transition and the NOR gate detects the rising transition.

Abstract: In accordance with a first embodiment, an electronic circuit includes a single latch having three stable states. The electronic circuit may be configured so that all three outputs reflect a change at any one input in not more than three gate delays. The electronic circuit may further be configured so that when all inputs are set to one, a previous state of the latch is retained and output on the outputs.