Minority Carrier Storage Effect Patents (Class 327/188)
Storage diode (e.g., step recovery, etc.) (Class 327/189)
  • Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
    Patent number: 6232822
    Abstract: A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE<ICB according to a voltage applied across a base and emitter where IBE is the base current flowing through a base-emitter path in a forward direction, and ICB is the base current flowing through a collector-base path in a reverse direction.
    Type: Grant
    Filed: June 30, 1994
    Date of Patent: May 15, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Sakui, Takehiro Hasegawa, Shigeyoshi Watanabe, Fujio Masuoka, Tsuneaki Fuse, Toshiki Seshita, Seiichi Aritome, Akihiro Nitayama, Fumio Horiguchi
  • Output circuit and semiconductor integrated circuit device
    Patent number: 5434526
    Abstract: The present invention relates to an output circuit and a semiconductor integrated circuit. It is an object of the present invention to cut off a passage of a current through a forward parasitic diode of a transistor connected to a power supply line and a ground line at a time of suspension of output operation of the relevant circuit, and to raise an output high level to the utmost and lower an output low level to the utmost at time of normal output operation.
    Type: Grant
    Filed: August 2, 1994
    Date of Patent: July 18, 1995
    Assignees: Fujitsu Limited, Kyushu Fujitsu Electronics Ltd.
    Inventors: Syouichi Tanigashira, Fumitaka Asami