Abstract: Majority voting between triple redundant integrated circuits is used in order to provide an SEU hardened output signal. Accordingly, an input signal is processed in a predetermined manner to provide a first signal, the input signal is processed in the same manner to provide a second signal, and the input signal is also processed in the same manner to provide a third signal. A majority vote is taken between the first, second, and third signals by an SEU immune majority voter circuit, and an output signal is provided corresponding to the majority vote.

Abstract: Majority voting between triple redundant integrated circuits is used in order to provide an SEU hardened output signal. Accordingly, an input signal is processed in a predetermined manner to provide a first signal, the input signal is processed in the same manner to provide a second signal, and the input signal is also processed in the same manner to provide a third signal. A majority vote is taken between the first, second, and third signals by an SEU immune majority voter circuit, and an output signal is provided corresponding to the majority vote.

Abstract: A circuit arrangement for making isolated voltage and/or current measurements on a transmission line is characterized in that a shunt branch between the go conductor (+) and the return conductor (−) contains a series combination of a transformer (T), a first optically controllable, clocked switching element (OS1), and a first resistor (R1), and/or that the go conductor (+) or the return conductor (−) contains a second resistor (R2) shunted by a series combination of a transformer (T) and a second optically controllable, clocked switching element (OS2). The measured voltage and current values can thus be taken off linearly to the voltages and currents of the transmission lines using simple means and only few active components, particularly without analog-to-digital converters and power supplies tied to the potential of the transmission line.

Abstract: A short-width pulse generating apparatus for use in measurement of a reflection point, a sampling apparatus for use in measurement of a a reflection point, and a reflection point measuring apparatus each being able to specify a reflection position produced in an integrated high-frequency circuit or a reflection point produced in the inside of an optical element with high accuracy are provided. A short-width pulse generation apparatus comprises short-width optical pulse generating means for generating an optical probe pulse having a narrow pulse width and photoelectric conversion means for producing a short-width electric pulse on a signal transmission line when irradiated with an optical probe pulse, and a sampling apparatus comprises variable delay means for sequentially delaying an optical probe pulse and second photoelectric conversion means for sampling an electric potential on the signal transmission line by being irradiated with an optical probe pulse delayed by the variable delay means.

Abstract: A semiconductor relay has two output MOSFET pairs, each of which is series-connected with the other. Each MOSFET pair is comprised of two MOSFETs series-connected oppositely to each other, and these MOSFETs are controlled to turn on or off simultaneously. The semiconductor relay further includes a switch, which is inserted between the ground and the junction of the two MOSFET pairs. When these MOSFETs are in an off condition, said switch is closed in order to release electric charges accumulated on said MOSFETs and to increase the off-resistance of this semiconductor relay. On the other hand, when the MOSFETs are in an on condition, said switch is opened so as to connect both MOSFET pairs in series. As a result, a semiconductor relay having a high off-resistance can be obtained without increasing the on-resistance.

Abstract: The present invention discloses a reconfigurable microstrip transmission line network having a microstrip circuit consisting of an RF ground plan separated from a transmission layer by a dielectric layer. The transmission layer comprises a silicon material responsive to a plurality of excitation sources. The excitation sources generate excitation beams which upon interacting with the surface of the transmission layer actuate a conductive pathway. By alternately actuating and deactuating the excitation sources and varying the excitation beams, the configuration of the microstrip transmission line network upon the transmission layer may be reconfigured as desired.

Abstract: A built-in drive-power-source semiconductor device of low cost having a good switching characteristic and a decreased switching loss. In operation, a reference charge potential is applied to a charging IGBT by a first constant voltage diode thereby turning on the IGBT to charge a battery means. When the charge potential of the battery means reaches a prescribed level, a MOSFET is turned on by a second constant voltage diode, shortcircuiting the first constant voltage diode, causing the charging IGBT is turn off to eliminate overcharging of the batter means and maintain the potential of the battery means at a prescribed value.