Abstract: A bit line voltage regulation circuit achieves uniform program features and precise cell distribution by providing a high voltage to a bit line regardless of a cell state. For this purpose, the regulation circuit includes a boosting unit for generating the high voltage, a switching unit, connected between the boosting unit and the bit line of a memory cell array, for transferring the high voltage to the bit line and an amplifying unit, for detecting a voltage drop at a detection node on the bit line caused by resistance on the bit line, amplifying the detected voltage drop to produce an amplified voltage driving the switching unit.
Type:
Application
Filed:
December 28, 2001
Publication date:
July 11, 2002
Inventors:
Ki-Seog Kim, Keun-Woo Lee, Seoung-Ouk Choi, Keon-Soo Shim
Abstract: An amplifier circuit incorporating a valve or vacuum tube in the grounded grid configuration is disclosed. The anode D.C. potential is greater than the cathode D.C. potential which is in turn greater than the grid D.C. potential. The cathode is switched at an R.F. rate to a further D.C. potential below that of the grid. Preferably the grid potential substantially cuts off cathode current flow with the switch open. The amplifier finds particular application as an output amplifier in an A.M. R.F. transmitter with the modulation being provided by high level anode modulation. The tube or valve can be a triode, tetrode, or pentode.